AS4C1M16F5 Search Results

AS4C1M16F5-60JC

Abstract: AS4C1M16F5-60JI AS4C1M16F5 AS4C1M16F5-60tc
Contextual Info: AS4C1M16F5 5V 1Mx16 CMOS DRAM fast-page mode Features • Organization: 1,048,576 words × 16 bits • High speed - 50/60 ns RAS access time - 20/25 ns fast page cycle time - 13/17 ns CAS access time • Low power consumption - Active: 880 mW max (AS4C1M16E0-60)

Contextual Info: Preliminary information •■ AS4C1M16F5 II 5V 1M x 16 C M O S DRAM fast page mode Features • O rganization: 1,048 ,5 7 6 w ords • H igh speed X • 1024 refresh cycles, 16 m s refresh interval 16 bits - K A S -o n ly o r C A S -b e fo r e -K A S r e f r e s h

1m16e

Contextual Info: AS4C1M16F5 5V 1Mx16 CMOS DRAM fast-page mode Features • Organization: 1,048,576 words × 16 bits • High speed - 50/60 ns RAS access time - 20/25 ns fast page cycle time - 13/17 ns CAS access time • Low power consumption - Active: 880 mW max (AS4C1M16E0-60)

AS4C1M16F5

Contextual Info: AS4C1M16F5 August 2001 5V 1Mx16 CMOS DRAM fast-page mode Features • Organization: 1,048,576 words × 16 bits • High speed - 45/50/60 ns RAS access time - 20/20/25 ns fast page cycle time - 10/12/15 ns CAS access time • Low power consumption - Active:

AS4C1M16F5

Contextual Info: Preliminary information •■ AS4C1M16F5 1 5V lM x 16 CM OS DRAM fast page mode Features • O rg an izatio n : 1 ,0 4 8 ,5 7 6 w o rd s • H ig h speed X • 1024 refresh cycles, 16 m s refresh in terv al 16 bits - K A S -only o r C A S-before-K A S r e f r e s h

16F5

Abstract: 4c1m16
Contextual Info: Preliminary information Features • 1024 refresh cycles, 16 ms refresh interval • Organization: 1,048,576 words x 16 bits • High speed - 50/60 ns RAS access time - 20/25 ns fast page cycle time - 13/17 ns CAS access time • Low power consumption - RAS-only o r ¿AS-before-ftAS refresh

Contextual Info: 3UHOLPLQDU\LQIRUPDWLRQ $6&0  90ð&026'5$0 IDVWSDJHPRGH )HDWXUHV • 1024 refresh cycles, 16 ms refresh interval • Organization: 1,048,576 words x 16 bits • High speed - RAS-only or CAS-before-RAS refresh • Read-modify-write • TTL-compatible, three-state DQ

mn4117405

Abstract: NN5118165 XL93LC46AP NN514265 MS6264L-10PC w24M257 NN514265A w24m257ak-15 HY62256ALP10 mhs p80c51
Contextual Info: ISSI CROSS REFERENCE GUIDE Integrated Silicon Solution, Inc. ISSI ® Integrated Silicon Solution, Inc. CROSS REFERENCE GUIDE SRAM DRAM EEPROM EPROM MICROCONTROLLER JUNE 1999 Integrated Silicon Solution, Inc. CP005-1F 6/1/99 1 ISSI CROSS REFERENCE GUIDE

M5M418165

Abstract: NEC 2581 CSP-48 AS7C33256PFS18A tc5588 KM6865 FLASH CROSS 256K16 TR-81090 la 4620
Contextual Info: Product Guide SRAM 64K 256K 512K All densities in bits 1M 2M 1.65V-3.6V Low-power Asynchronous IntelliwattT M 32Kx8 5V Fast Asynchronous 4M 8M 16M 512K×8 1M×8 2M×8 256K×16 3.3V Fast Asynchronous 8K×8 32K×8 32K×16 32K×16 128K×8 512K×8 64K×16

SRAM 64KX8 5V

Contextual Info: A Product Guide "641 Ali densities is bits TÎÎT 256K- —I.8V /2.S V /3.3V — 64KX16 ! -3.3V 32ÏX 8 asynchronous asynchronous in x: 8Kx8 I 32KX8 64KX8 32KX16 128KX8 I j!28gxl6| 64KX16 64KX8 128KX8 64KXJ6 32XX16 -3.3V 32KX32 synchronous Memories- -ED O

Contextual Info: Preliminary information •■ AS4C1M 16F5 A 5V 1M x 16 C M O S DRAM fast page mode Features • 1024 refresh cycles, 16 m s refresh interval • O rganization: 1,048 ,5 7 6 w ords x 16 bits • H igh speed - KAS-only or CAS-before-KAS refresh • R ead-m odify-w rite

Contextual Info: H ig h P e r fo r m a n c e 1M X 16 CM OS DRAM A S4C 1M 16F5 h I II l M x 1 6 C M O S D R A M fa st paae m od e Preliminary information Features • Organization: 1,048,576 words x 16 bits • High speed • 1024 refresh cycles, 16 ms refresh interval - RA S-only o r CAS-before-RAS re fresh