VC80 Search Results

2SC1815GR

Abstract: 2SC1815BL 2N3693 2SC1815-GR 2SC1815-BL 2N5209 2N5210 2N5232 2N5232A 2SC1815
Contextual Info: TO-92 PLASTIC PACKAGE TRANSISTORS NPN Typ* No. 2N5209 VC80 VCE0 VEBO (V) Mn (V) Min (V) Min 50 50 5 'cso (UA) Max 0.050 VC8 (V) hFE Min 35 50 50 5 0.050 35 9 Max Cob 'c & VCE VCE(SH| ®^BE (Sal) ® •c Ices 0 vce (mA) (uA) (V) (mA) (V) (V) (V) (Pf) Min Max

BC557 pnp transistor

Abstract: BC551 BC307B BC327 BC327-10 BC327-16 BC327-25 BC327-40 BC557 BC557A
Contextual Info: T092 PLASTIC PACKAGE TRANSISTORS PNP Typ» No. VC80 (V) Min 50 BC307B {Ta=25°C, U n le s s O th e rw is e S p e c ifie d ) E le c tric a l C h a ra c te ristic s M a x im u m R a tin g s VCEO VEBO lC0O (V) Min (V) Min (uA) Max hFE ^ce (VI 45 lc & (mAl

transistor 3568

Abstract: l0ua K 3568 110-pp VC80
Contextual Info: Hüll DATA SILICON EPITAXIAL m PN .3568 TRANSISTOR KP« TO-92 SHEET C6 £ GENERAL PURPOSE SWITCHING TRANSISTORS ABSOLUTE MAXIMUM RATINGS TA = 25 deg 0 RATING SYMBOL VALUE UNIT .Collector Emitter Voltage VCEO 60 V Collector Base Voltage VC80 80 V fB itter Base Voltage

pin configuration Bc327

Abstract: BC307B BC327 BC327-10 BC327-16 BC327-25 BC327-40 BC557 BC557A BC557C
Contextual Info: — CONTINENTAL DEVICE INDIA L.3E D • GG00124 S72 M C D I L TO-92 PLASTIC PACKAGE TRANSISTORS PNP Type No. BC307B (Ta=25°C, Unless Otherwise Specified) Electrical Characteristics Maximum Ratings VC80 VCEO V EBO 'CBO (V) Min (V) Min 00 Min (UA) Max 50

VC60

Abstract: E175067 D30VC60 10-32 UNF M5 vc20 VC80 diode
Contextual Info: D30 VC20 … D30 VC80 Silicon-Twin Rectifiers Center tap Silizium-Doppeldioden Mittelpunktschaltung Nominal current Nennstrom Type ”F” 30 A Alternating input voltage Eingangswechselspannung 60…250 V Plastic case with alu-bottom Kunststoffgehäuse mit Alu-Boden

SC5027

Abstract: KSC5027 ebc Transistor transistor 800V 1A
Contextual Info: KSC5027 NPN SILICON TRANSISTOR HIGH VOLTAGE AND HIGH RELIABILITY TO-220 HIGH SPEED SWITCHING WIDE SOA ABSOLUTE MAXIMUM RATINGS Symbol Rating Unit Collector-Base Voltage Characteristic Vc80 1100 V Collector-Emitter Voltage Emitter-Base Voltage VcEO 800 V ebc

D30VC60

Abstract: VC40 VC80 vc20 VC60
Contextual Info: D30 VC20 … D30 VC80 Silizium-Doppeldioden Mittelpunktschaltung Silicon-Twin Rectifiers Center tap Nominal current Nennstrom Type ”F” 30 A Alternating input voltage Eingangswechselspannung 60…250 V Plastic case with alu-bottom Kunststoffgehäuse mit Alu-Boden

ez 921

Abstract: 2SA733P 2SA1015Y 2SA537 PNP 2SA1015GR 2SA1015 2SA537B 2SA10150 2SA673A 2SA733
Contextual Info: CONTINENTAL DEVICE INDIA b3E D • 23033^4 DGDG1S3 b3b B K D I L - TO-92 PLASTIC PACKAGE TRANSISTO RS PNP Maximum Ratings Typ« No. 2SA537 (V) Un VCEO (V) Un VEBO (V) Un 60 50 5 VC80 Electrical Characteristics 'CBO (UA) VC8 (V)

2SC1815GR

Abstract: 2N3693 2SC1815Y 2SC1815BL 2SC2309 2sc3114 2N5210 2N5232 2N5232A 2SC1815
Contextual Info: TO-92 PLASTIC PACKAGE TRANSISTORS NPN Typ* No. 2NS209 VC80 VCEO VEBO (V) Mn (V) Min (V) Min 50 50 5 'cso (UA) Max 0.050 VC8 (V) hFE Min 35 50 50 5 0.050 35 9 Max Cob 'c & VCE VCE(SH| ®^BE (Sal) ® •c Ices 0 vce (mA) (uA) (V) (mA) (V) (V) (V) (Pf) Min Max

2SA10150

Abstract: SO-160
Contextual Info: CONTINENTAL DEVICE INDIA b3E D • 23033^4 DGDG1S3 b3b B K D I L - TO-92 PLASTIC PACKAGE TRANSISTORS PNP Maximum Ratings Typ« No. 2SA537 VC80 (V) Un 60 VCEO VEBO (V) (V) Un Un 50 5 Electrical Characteristics 'CBO (UA) VC8

BCG36

Abstract: bc557 SALJ TO-92-4pin BC327-10 to-92-4
Contextual Info: — CONTINENTAL DEVICE INDIA L.3E D • GG00124 S72 M C D I L TO-92 PLASTIC PACKAGE TRANSISTORS PNP Type No. BC307B (Ta=25°C, Unless Otherwise Specified) Electrical Characteristics Maximum Ratings VC80 VCEO V EBO 'CBO (V) Min (V) Min 00 Min (UA) Max 50

VC60

Abstract: VC80 vc20 VC80 diode VC40 VC80F
Contextual Info: D30 VC20 … D30 VC80 Silicon-Twin Rectifiers Center tap Silizium-Doppeldioden Mittelpunktschaltung Nominal current Nennstrom Type ”F” 30 A Alternating input voltage Eingangswechselspannung 60…250 V Plastic case with alu-bottom Kunststoffgehäuse mit Alu-Boden

BC557

Abstract: BCG36 BC307B BC327 BC327-10 BC327-16 BC327-25 BC327-40 BC557A BC557B
Contextual Info: — CONTINENTAL DEVICE INDIA L.3E D • GG00124 S72 M C D I L TO-92 PLASTIC PACKAGE TRANSISTORS PNP Type No. BC307B (Ta=25°C, Unless Otherwise Specified) Electrical Characteristics Maximum Ratings VC80 VCE0 V EB0 'CBO (V) Min (V) Min 00 Min (UA) Max 50

CIL2383R

Abstract: CIL2383Y CIL2482 CIL2655 CIL2655Y CIL857 CIL857GR CIL857Y
Contextual Info: TO-237 Plastic Package Transistors NPN Maximum Ratings Tvpe No. VC80 ^CEO ^EBO (V) Min (V) Min (V) Min Electrical Characteristics (Ta=25°C, Unless Otherwise Specified) Pd (W) 0Tc=25°c (A) ^CM leso V cb (A) (MA) Max (V) hfE Min lo * (mA) ^CE (V) Max V ca sM )

SOLITRON

Contextual Info: 8 3 6 8 6 0 2 SOL IT R O N D E V I C E S INC SOLITRON DEVICES INC _ ~bl Qlitron Devices, Inc. 61C.01277 D 'Tr_33-&L: DE |fl3t,flb02 00D1277 b j ^ Bop coO£ : J é A H S is 7 S P E C I F I C A T I O N S F£-£ óó I 3 N 0" TYPE: / J 7/-7 Voltage, Collector to Base VC80

T1S98

Abstract: T1S99 NPN T1S98 CSC1008 2N3858A 2N3859A BC174B BC337A BC445A BC546
Contextual Info: PLASTIC PACKAGE TRANSISTORS NPN Maximum Ratings Type No. BC174B BC546 BC546A Electrical Characteristics VC80 v CEO M (V) (V) 'CBO (uA) Mn Min Min Max SO 65 6 80 80 65 65 V EBO ® hFE ^C B 'c & vCE (mA) (V) 6 Min Max 180 460 110 6 BO 65 2.00 450 2.00 220

BF959

Contextual Info: R a tin g Sym bol V alue U n it C o U e c to r-E m itte r V olta g e VCEO 20 Vdc C o lle c to r-B a s e V olta g e VC80 30 Vdc E m itte r-B a s e V olta g e VEBO 3 0 Vdc C o lle ctor C u rre n t - C o n tin u o u s 'C 100 mAdc To tal D e v ic e D i s s i p a t i o n @ T a = 2 5 ° C

pnp 1500v 8a

Abstract: fr120 2SD1548 2SD2253 2SC4352 2sc5027 2SC2706 2SD2499 2sc4544 diode 6a 250v
Contextual Info: Horizontal Deflection Output Transistors for Color TV Description Ic For Small Screen Color TV VC80=1500V TO-3P H (BS) 2.5A 3.5A 2.5A 3.SA 3.5A 5A 2SD1431 2SD1432 6A 2SD1433 2SD1427 SA 6A 2SD1428 8A 10A 6A 7A 9A For Largs 16:9 Sctmh Color TV Vcao=1700V For Large 16:9 Screw Color TV

MJ2955

Abstract: j2955
Contextual Info: k aximum Ratings Electrical Characteristics Ta=25°C, Unless Otherwise Specified V : eo (V) V) (V) Pd (W) Min Min Min 8Tc=25“c BDX18 100 60 7 117 15 CDP05S 50 ¡¡o 5 50 10 M J2955 100 50 7 117 15 N O T E . IC£X O m CD < VC80 Type No. (A) bao (uA| Max

Contextual Info: SILICON EPITAXIAL m PH 3568 TRANSISTOR MPtt TO-92 C8 E GENERAL PURPOSE SNITCHING TRANSISTORS ABSOLUTE MAXINtIN RATINGS TA = 25 deg 0 RATING SYMBOL VALUE UNIT .Collector Emitter Voltage VCEO 60 V Collector Base Voltage VC80 80 V fritte r Base Voltage VEBO

VC80

Abstract: alu circuit with transistor
Contextual Info: D30 VC20 … D30 VC80 Silizium-Doppeldioden Mittelpunktschaltung Silicon-Twin Rectifiers Center tap Type “F” Type “W” Dimensions / Maße in mm Nominal current – Nennstrom 30 A Alternating input voltage – Eingangswechselspannung 60…250 V Dimensions – Abmessungen

SP6308

Abstract: lt33 TCA 700 VC80
Contextual Info: 8 3 6 8 6 0 2 SO L ITRON D E V I C E S INC T l DE |ñ 3tfltDa 0001305 T olitron Devices, Inc. NO.: S P E C I F I C A T I O N S 7 ^ 3 3 '/ A SP6308 TYPE: NPN SILIC O N POWER . CASE: T0-220 MAXIMUM RATINGS Voltage, Collector to Base VC80 700 .

Contextual Info: D30 VC20 … D30 VC80 Silicon-Twin Rectifiers Center tap Silizium-Doppeldioden Mittelpunktschaltung Type ”F” Nominal current Nennstrom 30 A Alternating input voltage Eingangswechselspannung 60…250 V Plastic case with alu-bottom Kunststoffgehäuse mit Alu-Boden

WSP-401M

Abstract: BD103 dms-200d bd102 transisTOR C123 2N5401C-Y DG04 rsb7 sk101 S1D2514X01
Contextual Info: S1D2514X01 Preliminary VIDEO AMP MERGED OSD PROCESSOR FOR MONITORS VIDEO AMP MERGED OSD PROCESSOR 32-DIP-600A The S1D2514X01 is a very high frequency video amplifier & wide range OSD processor 1 chip system with I2C Bus control used in monitors. It contains 3 matched R/G/B video