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    SALJ Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    pin configuration Bc327

    Abstract: BC307B BC327 BC327-10 BC327-16 BC327-25 BC327-40 BC557 BC557A BC557C
    Contextual Info: — CONTINENTAL DEVICE INDIA L.3E D • GG00124 S72 M C D I L TO-92 PLASTIC PACKAGE TRANSISTORS PNP Type No. BC307B (Ta=25°C, Unless Otherwise Specified) Electrical Characteristics Maximum Ratings VC80 VCEO V EBO 'CBO (V) Min (V) Min 00 Min (UA) Max 50


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    gg00124bc307bo-92-4bc327+8bc327-10pin configuration bc327bc327-16bc327-25bc327-40bc557bc557abc557c PDF

    NTC SD-9

    Abstract: R1561 NTC SD-15 PLS4148 S72I MUAB
    Contextual Info: 199SlSh< — SSVnSSSWS — — T T- 3 3 9 333 3333333333 3 3 333333333 la o rfN P K A V M ia 5 Q Ö Ö O O Ö Ö f l Hr'p,^'‘rtrt^ HrtNfHiN«NNN«NNrtnrtf»nnnonrt'»*-i’f>»i»*f •»¥í'iflíi«fiirtioiíiinifiift'í'í'íií K i n i i h a f t O '-


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    19961sheetpwa-5024/mli2301-li2315pwa-s024/m+6ntc sd-9r1561ntc sd-15pls4148s72imuab PDF

    BCG36

    Abstract: bc557 SALJ TO-92-4pin BC327-10 to-92-4
    Contextual Info: — CONTINENTAL DEVICE INDIA L.3E D • GG00124 S72 M C D I L TO-92 PLASTIC PACKAGE TRANSISTORS PNP Type No. BC307B (Ta=25°C, Unless Otherwise Specified) Electrical Characteristics Maximum Ratings VC80 VCEO V EBO 'CBO (V) Min (V) Min 00 Min (UA) Max 50


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    gg00124o-92-4bc307bbc327+6bcg36bc557saljto-92-4pinbc327-10to-92-4 PDF

    BC557

    Abstract: BCG36 BC307B BC327 BC327-10 BC327-16 BC327-25 BC327-40 BC557A BC557B
    Contextual Info: — CONTINENTAL DEVICE INDIA L.3E D • GG00124 S72 M C D I L TO-92 PLASTIC PACKAGE TRANSISTORS PNP Type No. BC307B (Ta=25°C, Unless Otherwise Specified) Electrical Characteristics Maximum Ratings VC80 VCE0 V EB0 'CBO (V) Min (V) Min 00 Min (UA) Max 50


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    gg00124bc307bo-92-4bc327+8bc327-10bc557bcg36bc327-16bc327-25bc327-40bc557abc557b PDF

    SALJ

    Contextual Info: HITACHI 2SC4501 L /(S) Silicon NPN Epitaxial High Gain Amplifier and Medium Speed Switching Absolute M axim um Ratings (Ta = 25°C) Item S ym bol Rating Unit Collector to base voltage VC8Q 30 V Collector to emitter voltage Vceo 30 V Emitter to base voltage


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    2sc4501salj PDF

    74LS783

    Abstract: MC6809E MC6847 MC1372 6809e 3.57954 MC1373 data eprom ic M68XX MD7 LC 2716
    Contextual Info: MC6847 M O T O R O L Non-Interlace A MC6847Y Interlace MC6847/MC6847Y VIDEO DISPLAY GENERATOR VDG T h e v id e o d is p la y g e n e r a to r (V D G ) p ro v id e s a m e a n s o f in te r fa c in g th e M 6 8 0 0 m ic ro p ro c e s s o r fa m ily (o r s im ila r p ro d u c ts ) t o a s ta n d a rd c o l­


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    mc6847mc6847ymc6847/mc6847ym6800+10mc1372mc6847s74ls783mc6809e6809e3.57954mc1373data eprom icm68xxmd7 lc 2716 PDF

    Contextual Info: li SAMSUNG E L E C T R O N I C S M2 E INC D • Q 0 1 G 4 CÌ 0 KMM536256B T E ISMGK DRAM MODULES 2 5 6K X 36 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM M 536256B is a 2 6 2 ,1 4 4 bit X 36 Dynamic RAM high density memory module. The Sam­


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    kmm536256b536256b20-pin18-pin+472-pin130ns536256b-150ns PDF

    Contextual Info: SIEMENS IL2B PHOTOTRANSISTOR OPTOCOUPLER F EATU R ES Package Dimensions in Inches mm • Five CTR Selections fai f3l [?l t • High Collector-Em itter Voltage, BVCEO= 50 V ypm one .246 (6.30) .256(6.50) • No Base Connection • Fieid-Effect Stable by TRansparent lOn


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    e52744add-x00123b32fci0gd727d PDF

    Contextual Info: t HITACHI 2SD2106 - Silicon NPN Epitaxial Low Frequency Power Amplifier Absolute Maximum Ratings Ta = 25°C Hem Symbol Rating Unit Collector to base voltage V CBO 120 V Collector to emitter voltage V CEO 120 V Emitter to base voltage V EBO 7 V Collector current


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    2sd2106o-220fsd7682sd21 PDF

    Contextual Info: M ITSU BISHI LSIs M 5 M 4 1 6 1 6 5 C J ,T P - 5 ,- 6 ,- 7 , -5S,-6S,-7S P E E U ' HYPER PAGE MODE 16777216-BIT 1048576-WQRD BY 16-BIT DYNAMIC RAM DESCRIPTION This is a family of 1048576-word by 16-bit dynamic RAMS, fabricated with the high performance CMOS process, and is ideal


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    16777216-bit1048576-wqrd16-bit1048576-word+2dq31048576-worddq9-dq16 PDF

    2SD970

    Abstract: 2SD2104
    Contextual Info: HITACHI 2SD2104-Silicon NPN Triple Diffused Low Frequency Power Amplifier Absolute Maximum Ratings Ta = 25°C ftem S y m b o l R a tin g U n it C ollector to base voltage V CBO 120 V C o lle cto r to em itter voltage V CEO 120 V E m itter to base voltage


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    2sd2104-o-220fm2sd21042sd970 PDF

    2sd2102

    Contextual Info: HITACHI 2SD2102- -Silicon NPN Triple Diffused Low Frequency Power Amplifier A bsolute M aximum Ratings Ta = 25°C Item Symbol Rating Unit Collector to base voltage V CBO 60 V Collector to emitter voltage VC£0 60 V Emitter to base voltage VE0O 7 V


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    2sd2102------220f2sd2102 PDF

    bt475 ramdac

    Abstract: soh dl6 Bt484/Bt485 82C480 ferrite H5B SCHEMATIC ATI graphics card ITE 8512 bt484 bt485 CHIPS TECHNOLOGIES IDE
    Contextual Info: CHIPS & TECHNOLOGIES INC 51E D • ZEHflllb 0DD3ÔSM 8 2 C 4 8 1 AST M C H P t-z z -37-* True Color Graphics Accelerator Advance Product Information This Material Copyrighted By Its Respective Manufacturer s CHIPS 8, TECHNOLOGIES INC SIE D scnaiib □□03ass 7^5 «


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    03fisst-52-33-45160-pin82c481+10bt475 ramdacsoh dl6bt484/bt48582c480ferrite h5bschematic ati graphics cardite 8512bt484bt485chips technologies ide PDF