2SD21 Search Results

Contextual Info: SILICON NPN EPITAXIAL TYPE 2SD2127 SWITCHING APPLICATIONS. INDUSTRIAL APPLICATIONS Unit in mm LAMP, SOLENOID DRIVE APPLICATIONS. 10*0.3 03.2±O.2 . High DC Current Gain : hi?E=500~1500 Ic= 0-5A . Low Collector Saturation Voltage : V C E (Sat)=0-3V(Max.)

Contextual Info: 2SD2130 SILICON NPN EPITAXIAL TYPE DARLINGTON POWER MICRO MOTOR DRIVE, HAMMER DRIVE APPLICATIONS. Unit in mm SWITCHING APPLICATIONS. 8.3MAX. 5.8 POWER AMPLIFIER APPLICATIONS. 0 3.1 ± 0 .1 . High DC Current Gain : hpE=2000(Min.)(VCE=2V, Ic=lA) 3:. Low Saturation Voltage

Contextual Info: Ordering num ber: EN 3196 2SD2176 No.3196 i SA\YO NPN Epitaxial Planar Silicon Transistor Motor Driver Applications F eatures • Darlington connection • On-chip zener diode of 60 ± 10V between collector and base • High inductive load handling capability

Contextual Info: Power Transistors 2SD2137, 2SD2137A Silicon NPN triple diffusion planar type Unit: mm • Absolute Maximum Ratings TC = 25°C Parameter Collector to base voltage 2SD2137 Collector to emitter voltage 2SD2137 Symbol Rating Unit VCBO 60 V 2SD2137A 60 2SD2137A

3203 NPN

Abstract: 2SD2116 3203 transistor transistor 3203
Contextual Info: Ordering number: EN 3 2 0 3 No. 3203 _ 2SD2116 NPN Epitaxial P lanar Silicon Transistor General Driver Applications F eatu re s • Darlington connection • High DC current gain •Large current capacity, wide ASO A bsolute M axim um R atin g s a t Ta = 25°C

2SD2157

Abstract: 2SD2157A
Contextual Info: 2SD2157, 2SD2157A Power Transistors 2SD2157, 2SD 2157A P a c k a g e D im e n s io n s Silicon NPN Triple-D iffused Planar D arlington Type P o w e r A m p lifie r • F e a tu re s • High D C c u rre n t gain h tF • High sp eed sw itch in g • “Fu ll P a c k ” p ackage for sim plified m ounting on a h e a t sink with

2SD2156

Abstract: 2SD215 2SD2156A
Contextual Info: Power Transistors 2SD215Ó, 2SD2156A 2SD2156, 2SD2156A Silicon NPN Triple-Diffused Planar Type High DC Current Gain • Features Package Dimensions Power Amplifier h FE , • High DC c u rre n t gain (Iife) (Iife ) • “Full Pack” package for simplified m ounting on a heat sink with one

3a npn to126 transistor

Abstract: 2SD2136
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SD2136 NPN SILICON TRANSISTOR POWER TRANSISTOR „ DESCRIPTION The UTC 2SD2136 is designed for power amplification. „ FEATURES * High forward current transfer ratio hFE which has satisfactory linearity. * Low collector to emitter saturation voltage VCE SAT .

2SD2153 SMD

Abstract: DN marking 2SD2153 SMD Transistor DN sot-89 marking dn
Contextual Info: Transistors SMD Type High Gain Amplifier Transistor 2SD2153 SOT-89 Unit: mm +0.1 4.50-0.1 Features +0.1 1.50-0.1 +0.1 1.80-0.1 +0.1 2.50-0.1 Excellent DC current gain characteristics. 2 3 +0.1 0.53-0.1 +0.1 0.44-0.1 2.60 +0.1 -0.1 +0.1 0.80-0.1 1 +0.1 0.48-0.1

Contextual Info: 2SD2155 TOSHIBA TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2 S D 2 1 55 Unit in mm PO W ER AM PLIFIER APPLICATIONS ¿ ± 3.3 • • 0.2 Complementary to 2SB1429 Recommend for 100W High Fidelity Audio Frequency Amplifier Output Stage. M A X IM U M RATINGS Ta = 25°C

2SB1429

Abstract: 2SD2155
Contextual Info: Inchange Semiconductor Product Specification 2SB1429 Silicon PNP Power Transistors DESCRIPTION ・With TO-3PL package ・Complement to type 2SD2155 APPLICATIONS ・Power amplifier applications ・Recommend for 100W high fidelity audio frequency amplifier output stage

SMD BR

Abstract: 2SD2198
Contextual Info: Transistors SMD Type Switching Applications 2SD2198 TO-263 Unit: mm 1 .2 7 -0+ 0.1.1 Features 5 .6 0 +0.2 4.57-0.2 0.1max 5 .2 8 -0+ 0.2.2 +0.1 1.27-0.1 +0.1 0.81-0.1 2.54 2.54 +0.2 -0.2 1 5 .2 5 -0+ 0.2.2 8 .7 -0+ 0.2.2 Low collector-to-emitter saturation voltage.

2SD2125

Contextual Info: SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SD2125 HORIAONTAL OUTPUT APPLICATIONS FOR COLOR TV & Unit in mm MEDIUM RESOLUTION DISPLAY. 1 5 .5 ± 0 .5 . High Voltage gf 3 .6 ± 0 .3 3 .0 ± 0 .3 :V CBO=1500V . Low Saturation Voltage :VcE sat =5V(Max.) (Ic=5A,I b =1A)

Contextual Info: SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SD2125 H O R I A O N T A L O U T P U T A P P L I C A T I O N S F O R C O L O R TV & U n it in 3.0±0.3 1 5.5±0.5 gf3.6±0.3 M E D I U M R E S O L U T I O N DISPLAY. . High Voltage :V c b o = L500V . Low SaturationVoltage

D2131

Abstract: D-2131 2SD2131
Contextual Info: 2SD2131 東芝トランジスタ シリコンNPN三重拡散形 2SD2131 ○ 大電力スイッチング用 ○ ハンマドライブパルスモータドライブ用 単位: mm • 直流電流増幅率が高い。 : hFE = 2000 最小 (VCE = 3 V, IC = 3 A)

D2131

Abstract: transistor d2131 2SD2131
Contextual Info: 2SD2131 TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington 2SD2131 High-Power Switching Applications Hammer Drive, Pulse Motor Drive Applications • High DC current gain: hFE = 2000 (min) (VCE = 3 V, IC = 3 A) • Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 3 A)

Contextual Info: Transistors IC SMD Type Product specification 2SD2122S TO-252 Features +0.15 1.50 -0.15 +0.15 6.50-0.15 +0.2 5.30-0.2 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 +0.1 0.60-0.1 2.3 3 .8 0 +0.15 5.55 -0.15 0.127 max +0.25 2.65 -0.1 +0.1 0.80-0.1 +0.28 1.50 -0.1 +0.15

2SB1416

Abstract: 2SD2136
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD2136 Silicon NPN triple diffusion planar type For power amplification Complementary to 2SB1416 Unit: mm Collector-emitter voltage (Base open) Emitter-base voltage (Collector open)

2069B

Abstract: 2SB1449
Contextual Info: Ordering number:EN3149 PNP/NPN Epitaxial Planar Silicon Transistors 2SB1449/2SD2198 50V/5A Switching Applications Features Package Dimensions • Surface mount type device making the following possible. -Reduction in the number of manufacturing processes for 2SB1449/2SD2198-applied equipment.

2SD2120

Contextual Info: Ordering number:EN3239 NPN Epitaxial Planar Silicon Transistor 2SD2120 General Driver Applications Features Package Dimensions • Darlington connection Contains bias resistance, damper diode . · High DC current gain. · Less dependence of DC current gain on temperature.

2SD2101

Contextual Info: SavantIC Semiconductor Product Specification 2SD2101 Silicon NPN Power Transistors DESCRIPTION •With TO-220Fa package ·DARLINGTON APPLICATIONS ·Low frequency power amplifier PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline TO-220Fa and symbol

2SD2125

Contextual Info: SavantIC Semiconductor Product Specification 2SD2125 Silicon NPN Power Transistors DESCRIPTION •With TO-3P H IS package ·Built-in damper diode ·High voltage ,high speed ·Low saturation voltage APPLICATIONS ·Horizontal output applications for color TV

2SB1409

Abstract: 2SD2122 2SD2123 DSA003645
Contextual Info: 2SD2122 L /(S), 2SD2123(L)/(S) Silicon NPN Epitaxial ADE-208-926 (Z) 1st. Edition Sep. 2000 Application Low frequency power amplifier complementary pair with 2SB1409(L)/(S) Outline DPAK 4 4 1 2 3 S Type 12 3 L Type 1. Base 2. Collector 3. Emitter 4. Collector

2SB1440

Abstract: 2SD2185 DSA003720 DSA00372056
Contextual Info: Transistor 2SB1440 Silicon PNP epitaxial planer type For low-frequency output amplification Complementary to 2SD2185 Unit: mm 45° * 0.5±0.08 1.5±0.1 Ta=25˚C Symbol Ratings Unit Collector to base voltage VCBO –50 V Collector to emitter voltage VCEO