2SB1409 Search Results

2SB1409

Abstract: 2SD2122 2SD2123 DSA003645
Contextual Info: 2SD2122 L /(S), 2SD2123(L)/(S) Silicon NPN Epitaxial ADE-208-926 (Z) 1st. Edition Sep. 2000 Application Low frequency power amplifier complementary pair with 2SB1409(L)/(S) Outline DPAK 4 4 1 2 3 S Type 12 3 L Type 1. Base 2. Collector 3. Emitter 4. Collector

Hitachi DSA001650

Contextual Info: 2SB1409 L /(S) Silicon PNP Epitaxial Application Low frequency power amplifier complementary Pair with 2SD2123(L)/(S) Outline DPAK 4 4 1 2 3 S Type 12 3 L Type 1. Base 2. Collector 3. Emitter 4. Collector 2SB1409(L)/(S) Absolute Maximum Ratings (Ta = 25°C)

2SB1409

Abstract: 2SD2122 2SD2123 Hitachi DSA00382
Contextual Info: 2SD2122 L /(S), 2SD2123(L)/(S) Silicon NPN Epitaxial Application Low frequency power amplifier complementary pair with 2SB1409(L)/(S) Outline DPAK 4 4 1 2 3 S Type 12 3 L Type 1. Base 2. Collector 3. Emitter 4. Collector 2SD2122(L)/(S), 2SD2123(L)/(S) Absolute Maximum Ratings (Ta = 25°C)

2SB1409S

Contextual Info: Transistors SMD Type Silicon NPN Triple Diffused Type Transistor 2SB1409S TO-252 6.50 +0.2 5.30-0.2 +0.15 1.50 -0.15 +0.15 -0.15 Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 2.3 +0.1 0.60-0.1 3 .8 0 +0.15 5.55 -0.15 +0.25 2.65 -0.1 0.127 max +0.28 1.50 -0.1 +0.1

Hitachi DSA001650

Contextual Info: 2SD2122 L /(S), 2SD2123(L)/(S) Silicon NPN Epitaxial Application Low frequency power amplifier complementary pair with 2SB1409(L)/(S) Outline DPAK 4 4 1 2 3 S Type 12 3 L Type 1. Base 2. Collector 3. Emitter 4. Collector 2SD2122(L)/(S), 2SD2123(L)/(S) Absolute Maximum Ratings (Ta = 25°C)

2SB1409

Abstract: 2SD2123 Hitachi DSA00382
Contextual Info: 2SB1409 L /(S) Silicon PNP Epitaxial Application Low frequency power amplifier complementary Pair with 2SD2123(L)/(S) Outline DPAK 4 4 1 2 3 S Type 12 3 L Type 1. Base 2. Collector 3. Emitter 4. Collector 2SB1409(L)/(S) Absolute Maximum Ratings (Ta = 25°C)

Contextual Info: 2SB1409 L /(S) Silicon PNP Epitaxial HITACHI Application Low frequency power amplifier complementary Pair with 2SD2123(L)/(S) Outline DPAK 4 6 S Type 1 3 L Type 1. 2. 3. 4. Base Collector Em itter Collector 2SB1409(L)/(S) Absolute Maximum Ratings (Ta = 25 °C)

Contextual Info: HITACHI 2SB1409 /© Silicon PNP Epitaxial Low Frequency Power Amplifier Complementary Pair with 2SD2123 £ /(§) Absolute Maximum Ratings (Ta = 25°C) Item Symbol Rating Unit Collector to base voltage VCBO -180 V Collector to emitter voltage VCEO -160 V

2SB1409

Abstract: 2SD2123 Hitachi DSA00315
Contextual Info: 2SB1409 L /(S) Silicon PNP Epitaxial ADE-208-877 (Z) 1st. Edition Sep. 2000 Application Low frequency power amplifier complementary Pair with 2SD2123(L)/(S) Outline DPAK 4 4 1 2 3 S Type 12 3 L Type 1. Base 2. Collector 3. Emitter 4. Collector 2SB1409(L)/(S)

Contextual Info: Product specification 2SB1409S TO-252 6.50 +0.2 5.30-0.2 +0.15 1.50 -0.15 +0.15 -0.15 Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 2.3 +0.1 0.60-0.1 3 .8 0 +0.15 5.55 -0.15 +0.25 2.65 -0.1 0.127 max +0.28 1.50 -0.1 +0.1 0.80-0.1 +0.15 0.50 -0.15 +0.2 9.70 -0.2 Features

Contextual Info: 2SD2122 L /(S), 2SD2123(L)/(S) Silicon NPN Epitaxial HITACHI Application Low frequency pow er am plifier complementary pair with 2SB1409(L)/(S) Outline DPAK 4 1ft <w S Type 1. 3 L Type 1. 2. 3. 4. Base Collector Emitter Collector 2SD2122(L)/(S), 2SD2123(L)/(S)

Contextual Info: 2SB1409 L /(S) Silicon PNP Epitaxial HITACHI Application Low frequency power amplifier complementary Pair with 2SD2123(L)/(S) Outline 2SB1409(L)/(S) Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit C ollector to base voltage ^C B O -1 8 0 V C ollector to em itter voltage

Hitachi DSA00279

Contextual Info: 2SD2122 L /(S), 2SD2123(L)/(S) Silicon NPN Epitaxial Application Low frequency power amplifier complementary pair with 2SB1409(L)/(S) Outline DPAK 4 4 1 2 3 S Type 12 3 L Type 1. Base 2. Collector 3. Emitter 4. Collector 2SD2122(L)/(S), 2SD2123(L)/(S) Absolute Maximum Ratings (Ta = 25°C)

Hitachi DSA002787

Contextual Info: 2SB1409 L /(S) Silicon PNP Epitaxial Application Low frequency power amplifier complementary Pair with 2SD2123(L)/(S) Outline DPAK 4 4 1 2 3 S Type 12 3 L Type 1. Base 2. Collector 3. Emitter 4. Collector 2SB1409(L)/(S) Absolute Maximum Ratings (Ta = 25°C)

Contextual Info: 2SD2122 L /(S), 2SD2123(L)/(S) Silicon NPN Epitaxial HITACHI Application Low frequency power amplifier complementary pair with 2SB1409(L)/(S) Outline DPAK 4 i 1 2 3 4 L Type Base Collector Emitter Collector 2SD2122(L)/(S), 2SD2123(L)/(S) Absolute Maximum Ratings (Ta = 25°C)

Contextual Info: 2SB1409 L /(S) Silicon PNP Epitaxial HITACHI Application Low frequency power amplifier complementary Pair with 2SD2123(L)/(S) Outline DPAK 4 6 S Type L Type 1. 2. 3. 4. Base Collector Em itter Collector 2SB1409(L)/(S) Absolute Maximum Ratings (Ta = 25 °C)

Contextual Info: 2SD2122 L /(S), 2SD2123(L)/(S) Silicon NPN Epitaxial HITACHI Application Low frequency power amplifier complementary pair with 2SB1409(L)/(S) Outline 2SD2122(L)/(S), 2SD2123(L)/(S) Absolute Maximum Ratings (Ta = 25 °C) Ratings Item Symbol 2SD2122(L)/(S) 2SD2123(L)/(S)

VC90

Abstract: TP 2123
Contextual Info: HITACHI 2SD2122 D/(D, 2SD2123(L /(S Silicon NPN Epitaxial Low Frequency Power Amplifier Complementary Pair with 2SB1409« A b solute M axim um R atin gs (Ta = 25°C ) OPAK 2SD2I22 2SD2123 Symbol ( p /<§) Unit CD/(D Item Collector to base voltage VC90 180

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

2SA1015

Abstract: 2SA1091 2SA1371 2SA562TM 2SB548 2SB814 2SA1243 2SB642 2SB793 2SA1306A
Contextual Info: - 34 - m s Type No. £ M a n u f. 2SA 1535 , tö T 2SA 1535A tö T = * SANYO 2SB1037 X 3E TOSHIBA B 'S NEC 1 Tn« B tL HITACHI H ± il FUJITSU tö T MATSUSHITA — M MITSUBISHI 2SB649A = 2SA 1542 □—A 2SA 1543 □— A 2SA1015 2SB642 2SA 1544 b m. 2SA1624

2SD2103

Abstract: 2SD2096 TO220FM 2SD2102 2sd209 2SD2109 STC 100u 2SD2091 SC-63 2SD2093
Contextual Info: - 280 - Ta=25^,*EPÍáTc=25'C í± « 2SD2091 2SD2092 2SD2093 2SD2094 2SD2096 2SD2097 2SD2098 2SD2099 2SD2100 2SD2101 2SD2102 2SD2103 2SD2104 2SD2Ì05 2SD2106 2SD2107 2SD2108 2SD2109 2SD2110 2SD2111 2SD2112 2SD2113 2SD2114K 2SD2115L/S 2SD2116 2SD2117 2SD2119

Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

2SB1409

Abstract: 2SD2123
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

alternator diode 1776 B

Abstract: 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent
Contextual Info: Transistors Transistors Diodes Diodes Thyristors Thyristors SAW SAW Device Device Dielectric Dielectric Device Device Integrated Integrated Circuit Circuit Table of Contents Index 5 SMD Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors)