2SD2092 Search Results

transistor D2092

Abstract: d2092 2SD2092
Contextual Info: 2SD2092 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SD2092 Switching Applications Lamp, Solenoid Drive Applications Unit: mm • High DC current gain: hFE 1 = 500 to 1500 • Low collector saturation voltage: VCE (sat) = 0.3 V (max) Maximum Ratings (Tc = 25°C)

2SD2092

Abstract: 2SD2092 equivalent
Contextual Info: TOSHIBA 2SD2092 TOSHIBA TRANSISTOR SWITCHING APPLICATIONS SILICON NPN EPITAXIAL TYPE 2SD2092 Unit in mm LAMP, SOLENOID DRIVE APPLICATIONS • • 10 ±0.3 r High DC Current Gain : hpg i = 500~1500 Low Collector Saturation Voltage : v CE(sat) = °-3V (Max.)

2SD2103

Abstract: 2SD2096 TO220FM 2SD2102 2sd209 2SD2109 STC 100u 2SD2091 SC-63 2SD2093
Contextual Info: - 280 - Ta=25^,*EPÍáTc=25'C í± « 2SD2091 2SD2092 2SD2093 2SD2094 2SD2096 2SD2097 2SD2098 2SD2099 2SD2100 2SD2101 2SD2102 2SD2103 2SD2104 2SD2Ì05 2SD2106 2SD2107 2SD2108 2SD2109 2SD2110 2SD2111 2SD2112 2SD2113 2SD2114K 2SD2115L/S 2SD2116 2SD2117 2SD2119

2sd2092

Abstract: 2SD2092 equivalent
Contextual Info: TO SH IBA 2SD2092 TOSHIBA TRANSISTOR SWITCHING APPLICATIONS SILICON NPN EPITAXIAL TYPE 2SD2092 Unit in mm LAMP, SOLENOID DRIVE APPLICATIONS 10 ±0.3 High DC Current Gain : hpE i = 500~1500 Low Collector Saturation Voltage : v CE(sat) = °-3V (Max.) J O •

2sd2092

Abstract: 2sd209
Contextual Info: TO SH IBA 2SD2092 TOSHIBA TRANSISTOR SWITCHING APPLICATIONS SILICON NPN EPITAXIAL TYPE 2SD2092 Unit in mm LAMP, SOLENOID DRIVE APPLICATIONS 10 ±0.3 High DC Current Gain : hpE i = 500~1500 Low Collector Saturation Voltage : v CE(sat) = °-3V (Max.) J O •

transistor D2092

Abstract: 2SD2092 D2092
Contextual Info: 2SD2092 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SD2092 Switching Applications Lamp, Solenoid Drive Applications Unit: mm • High DC current gain: hFE 1 = 500 to 1500 • Low collector saturation voltage: VCE (sat) = 0.3 V (max) Absolute Maximum Ratings (Tc = 25°C)

transistor D2092

Abstract: d2092 2SD2092 2SD2092 equivalent
Contextual Info: 2SD2092 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SD2092 Switching Applications Lamp, Solenoid Drive Applications Unit: mm • High DC current gain: hFE 1 = 500 to 1500 • Low collector saturation voltage: VCE (sat) = 0.3 V (max) Absolute Maximum Ratings (Tc = 25°C)

Contextual Info: TO SHIBA 2SD2092 2SD2092 TOSHIBA TRANSISTOR SWITCHING APPLICATIONS SILICON NPN EPITAXIAL TYPE Unit in mm LAMP, SOLENOID DRIVE APPLICATIONS 10 ±0.3 • • High DC Current Gain : hjrj; 1 —500 ~ 1500 Low Collector Saturation Voltage : v CE(sat) = °-3V (Max.)

2SD2092 equivalent

Abstract: 2sd2092 ic 1053
Contextual Info: 2SD2092 SILICON NPN EPITAXIAL TYPE INDUSTRIAL APPLICATIONS _ Unit in mm SWITCHING APPLICATIONS. LAMP, SOLENOID DRIVE APPLICATIONS. 10±0.3 jzf3-2±0.2 2.7±0.2 . High DC Current Gain : hFE=500~1500 Ic=0-5A . Low Collector Saturation Voltage

2SD2092 equivalent

Contextual Info: SILICON NPN EPITAXIAL TYPE 2SD2092 INDUSTRIAL APPLICATIONS Unit in mm SWITCHING APPLICATIONS. LAMP, SOLENOID DRIVE APPLICATIONS. 10±0.3 3.2±0.2 2.7±0.2 . High DC Current Gain : hFE=500~1500 Ic=0.5A . low Collector Saturation Voltage : ^CE(sat)=0-3V(Max.) (Ic=lA)

d2092

Abstract: 2SD2092
Contextual Info: 2SD2092 東芝トランジスタ シリコンNPNエピタキシャル形 2SD2092 通 信 工 業 用 ○ スイッチング用 ○ ランプソレノイド駆動用 単位: mm • 直流電流増幅率が高い。 • コレクタ飽和電圧が低い。 : VCE sat = 0.3 V (最大) (IC = 1 A)

transistor D2092

Abstract: D2092
Contextual Info: 2SD2092 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SD2092 Switching Applications Lamp, Solenoid Drive Applications Unit: mm • High DC current gain: hFE 1 = 500 to 1500 • Low collector saturation voltage: VCE (sat) = 0.3 V (max) Maximum Ratings (Tc = 25°C)

2SD2092 equivalent

Abstract: transistor2SD2092 2sd2092
Contextual Info: TOSHIBA 2SD2092 2 S D2 0 9 2 TOSHIBA TRANSISTOR SWITCHING APPLICATIONS SILICON NPN EPITAXIAL TYPE Unit in mm LAMP, SOLENOID DRIVE APPLICATIONS High DC Current Gain : hpg i = 500-~1500 Low Collector Saturation Voltage ‘ VCE (sat) = °-3V (Max.) M A X IM U M RATINGS (Ta = 25°C)

Transistor 2SA 2SB 2SC 2SD

Abstract: S-AU27M S2000A inverter P4005 S-AV21H S-AU27 3182N 2sb 834 transistor Transistor 2SC4288A Drive IC 2SC3346
Contextual Info: TO-126 IS , PO W ER MOLD PACKAGE TRANSISTOR SELECTION GUIDE • TO-126 (IS) ▲ PW MOLD Darlington A PW MOLD • POWER MOLD TO-126 (IS) Darlington TO-126 OS) H A T0-220AB, TO-220 (IS) PACKAGE TRANSISTOR S E L ECTION G UIDE r— " ~ '''- Y C E O ( V ) lc (A)

STK411-230E

Abstract: STK411-220E stk442-130 PAL005A UPC2581V FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
Contextual Info: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for

GT30F131

Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01
Contextual Info: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs

IGBT GT30F124

Abstract: IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075
Contextual Info: 東芝半導体製品総覧表 2011 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ

2sC5200, 2SA1943

Abstract: 2SA1941 equivalent 2SC5353 equivalent 2sc5198 equivalent amplifier circuit using 2sa1943 and 2sc5200 2SC2383 equivalent tpcp8l01 2SA1962 equivalent 2SC4793 2sa1837 2sA1013 equivalent
Contextual Info: 2011-4 PRODUCT GUIDE Power Transistors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g Power Transistors for Audio Power Amplifiers Using a minute pattern and a high-density MET design, Toshiba has achieved high levels of current

15J102

Abstract: Transistor 2SC4288A Transistor 2SA 2SB 2SC 2SD Drive IC 2SC3346 2sa 102 transistor transistor 2SA 101 50J301 02SC5030 T15J103 Driver IC 2SC3346
Contextual Info: L -S T M T 0 -9 2 M 0 D T Y P E POWER TRANSISTOR V ’CEO \(V> 10 30 40 50 60 80 100 120 180 2SA949U50VI 2AC2229(150V) 0.05 200 250 2SA1321 2SC3334 300 2SC5122I400V) 2SA1145U50V) 2SC2705(!50V) 2SC2230(160V) 0.1 2SC2482 2SC2230A 2SA817A 0.4 2SC1627A 2SA1811

2sC5200, 2SA1943, 2sc5198

Abstract: GTI5Q101 2sc5039 2SC4532 2SD2088 2SC3303 2sC5200, 2SA1943 2SA1803 2sc4408 GT10G102
Contextual Info: • ALPHNUMERICAL INDEX Type No. Page Type No. Page Type No. Page 2SA817A 121 2SA1387 202 2SA1892 278 2SA940 123 2SA1388 206 2SA1893 280 2SA949 125 2SA1408 209 2SA1899 281 2SA965 127 2SA1425 212 2SA1905 282 2SA966 129 2SA1426 214 2SA1923 284 2SA1012 131 2SA1428

LM8550

Abstract: KTD2026 2SC2320 equivalent NEC 12F DATASHEET 2N3904 MOTOROLA 2sc2240 equivalent 2N3906 MOTOROLA 2sc1983 2N5400 MOTOROLA 2SD1960
Contextual Info: Type No. Maker KEC Type No. Maker KEC Type No. Maker KEC Type No. Maker KEC 2N2222/A Motorola KTN2222/A 2SA1150 Toshiba KTA1272 2SA1510 Sanyo KRA1 10S 2SB546A NEC KTB 1369 2N2369/A Motorola KTN2369/A 2SA1151 NEC KTA1266 2SA1511 Sanyo KRA1 10M 2SB560 Sanyo

smd transistor h2a

Abstract: SMD TRANSISTOR H2A NPN transistor smd H2A 2sa1943 amplifier circuit diagram TPCP8L01 2sC5200, 2SA1943 H2A transistor SMD 2sc5200 power amplifiers diagram MARKING SMD PNP TRANSISTOR h2a SMD H2A
Contextual Info: 2008-9 PRODUCT GUIDE Power Transistors s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g Using a minute pattern and a high-density MET design, Toshiba has achieved high levels of current efficiency. Package type can be selected to yield collector power output

MN1280

Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
Contextual Info: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor

GT30F124

Abstract: TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123
Contextual Info: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs