2SD215 Search Results

2SD2157

Abstract: 2SD2157A
Contextual Info: 2SD2157, 2SD2157A Power Transistors 2SD2157, 2SD 2157A P a c k a g e D im e n s io n s Silicon NPN Triple-D iffused Planar D arlington Type P o w e r A m p lifie r • F e a tu re s • High D C c u rre n t gain h tF • High sp eed sw itch in g • “Fu ll P a c k ” p ackage for sim plified m ounting on a h e a t sink with

2SD2156

Abstract: 2SD215 2SD2156A
Contextual Info: Power Transistors 2SD215Ó, 2SD2156A 2SD2156, 2SD2156A Silicon NPN Triple-Diffused Planar Type High DC Current Gain • Features Package Dimensions Power Amplifier h FE , • High DC c u rre n t gain (Iife) (Iife ) • “Full Pack” package for simplified m ounting on a heat sink with one

2SD2153 SMD

Abstract: DN marking 2SD2153 SMD Transistor DN sot-89 marking dn
Contextual Info: Transistors SMD Type High Gain Amplifier Transistor 2SD2153 SOT-89 Unit: mm +0.1 4.50-0.1 Features +0.1 1.50-0.1 +0.1 1.80-0.1 +0.1 2.50-0.1 Excellent DC current gain characteristics. 2 3 +0.1 0.53-0.1 +0.1 0.44-0.1 2.60 +0.1 -0.1 +0.1 0.80-0.1 1 +0.1 0.48-0.1

Contextual Info: 2SD2155 TOSHIBA TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2 S D 2 1 55 Unit in mm PO W ER AM PLIFIER APPLICATIONS ¿ ± 3.3 • • 0.2 Complementary to 2SB1429 Recommend for 100W High Fidelity Audio Frequency Amplifier Output Stage. M A X IM U M RATINGS Ta = 25°C

2SB1429

Abstract: 2SD2155
Contextual Info: Inchange Semiconductor Product Specification 2SB1429 Silicon PNP Power Transistors DESCRIPTION ・With TO-3PL package ・Complement to type 2SD2155 APPLICATIONS ・Power amplifier applications ・Recommend for 100W high fidelity audio frequency amplifier output stage

2SD2151

Contextual Info: Power Transistors 2SD2151 Silicon NPN epitaxial planar type Unit: mm • Absolute Maximum Ratings TC = 25°C Parameter Rating Unit Collector to base voltage VCBO 130 V Collector to emitter voltage VCEO 80 V Emitter to base voltage VEBO 7 V Peak collector current

Contextual Info: Transistors Low-frequency Transistor 20V, 3A 2SD2150/2SC4115S/2SD2264 •F e a tu re s 1 ) • E x t e r n a l d im e n s io n s (U nits: m m ) LOW V cE(sat). VcE(sat) = 0.2V (Typ.) (Ic / I 2) b = 2 A /0 .1 A ) E x c e lle n t c u rre n t g a in c h a ra c te ris ­

Transistor MARKING CODE AW SOT89

Abstract: Transistor marking 0.5 sot-89 MARKING CODE 4A transistors 2sd 2SD2153 T100 Transistor MARKING CODE AW SOT-89 oc sc62
Contextual Info: 2SD2153 Transistor, NPN Features Dimensions Units : mm • available in MPT3 (MPT, SOT-89, SC-62) package • package marking: 2SD2153; DIM-*, where ★ is hFE code 2SD2153 (MPT3) 1.6 * 0 1 ?T. zH . it sf • excellent current-to-gain characteristics • low collector saturation voltage,

2SD2158

Abstract: 2SD2158A
Contextual Info: 2SD2158, 2SD2158A Power Transistors 2SD 2158, 2SD 2158A Silicon NPN Triple-Diffused Planar Type High DC C urrent Gain Package Dim ensions Power A m plifier Ii f e , • Features U n it 1 mm 4 .4 m a x . 10.2max. 5.7max. • H igh D C c u r r e n t gain (h FE)

Contextual Info: ST 2SD2150U NPN Silicon Epitaxial Planar Transistor Low frequency transistor Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Collector Base Voltage VCBO 40 V Collector Emitter Voltage VCEO 20 V Emitter Base Voltage V VEBO 6 Collector Current - DC

0-12v

Abstract: 2SD2153 T100
Contextual Info: 2SD2153 Transistors High gain amplifier transistor 25V, 2A 2SD2153 zExternal dimensions (Unit : mm) zFeatures 1) Low saturation voltage, typically VCE(sat) = 0.12V at IC = IB = 1A / 20mA 2) Excellent DC current gain characteristics. 4.0 2.5 0.5 1.6 (2) 4.5

2SB1424

Abstract: 2SD2150 T100
Contextual Info: 2SD2150 Transistors Low Frequency Transistor 20V, 3A 2SD2150 zExternal dimensions (Unit : mm) zFeatures 1) Low VCE(sat). VCE(sat) = 0.2V(Typ.) （IC / IB = 2A / 0.1A） 2) Excellent current gain characteristics. 3) Complements the 2SB1424. 2SD2150 0.5±0.1

Contextual Info: i TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE " « n - M 'M l ZSB14Z9 POWER AMPLIFIER APPLICATIONS. Unit in mm 20.5MAX . Complementary to 2SD2155 f m . Recommend for 100W High Fiderity Audio Frequency Amplifier Output Stage. MAXIMUM RATINGS Ta-25°C

2SB1429

Contextual Info: 2SB1429 SILICON PNP TRIPLE DIFFUSED TYPE POWER A MPL I F I E R APPLICATIONS. Unit in m m 20.5MAX . C omplementary to 2SD2155 # 3 .3 ±0.2 . R ecommend for 100W H i g h Fiderity A udio F requency Ampl i f i e r Output Stage. 2.5 3.0 +2.5 1 .0 -0 .2 5 MA XI M U M RATINGS Ta~25°C

Contextual Info: 2SB1427 2SD2153 Transistors I Power Transistor 20V, —2A 2SB1427 •F e a tu re « •A b s o lu te maximum ratings (T a = 2 5 t:) 1 ) LowVcE(Mt>. ( T y p .— 0 .5 V a t Ic/ I b = — 1 /— 5 0 m A ) Parameter 2 ) E x c e lle n t D C c u rre n t g a in c h a ra c te ris tic s .

smd transistor marking cf

Abstract: CF marking transistor smd cf smd marking CF 2SD2150 SOT-89 smd marking CF
Contextual Info: Transistors SMD Type Low Frequency Transistor 2SD2150 SOT-89 Unit: mm 4.50 1.50 +0.1 -0.1 +0.1 -0.1 +0.1 1.80-0.1 +0.1 2.50-0.1 Low VCE sat . 1 2 3 +0.1 0.53-0.1 +0.1 0.48-0.1 +0.1 0.44-0.1 2.60 +0.1 -0.1 NPN silicon transistor. +0.1 0.80-0.1 Excellent DC current gain characteristics.

Contextual Info: Power Transistors 2SD2156, 2SD2156A Silicon NPN triple diffusion planar type For power amplification with high forward current transfer ratio Unit: mm 0.7±0.1 10.0±0.2 2.7±0.2 Parameter TC=25˚C Symbol Collector to 2SD2156 base voltage 2SD2156A Collector to

Contextual Info: Power Transistors 2SD2158, 2SD2158A Silicon NPN triple diffusion planar type For power amplification with high forward current transfer ratio • Features High foward current transfer ratio hFE Satisfactory linearity of foward current transfer ratio hFE Full-pack package which can be installed to the heat sink with

2SD2150

Contextual Info: 2SD2150 NPN Epitaxial Planar Transistors SOT-89 P b Lead Pb -Free 1 1. BASE 2. COLLECTOR 3. EMITTER 2 3 ABSOLUTE MAXIMUM RATINGS (TA=25˚C) Symbol Limits Unit Collector-Base Voltage VCBO 40 V Collector-Emitter Voltage VCEO 20 V Emitter-Base Voltage VEBO 6

2SD2155

Abstract: 2SB1429
Contextual Info: SavantIC Semiconductor Product Specification 2SD2155 Silicon NPN Power Transistors DESCRIPTION •With TO-3PL package ·Complement to type 2SB1429 APPLICATIONS ·Power amplifier applications ·Recommend for 100W high fidelity audio frequency amplifier output stage

E50U

Abstract: c2a marking 2SD2150 sot89 "NPN TRANSISTOR" marking C2A
Contextual Info: 2SD2150 NPN Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free SOT-89 Features 4.4~4.6 1 1.4~1.8 2 1.4~1.6 3 3.94~4.25 1.BASE 2.COLLECTOR 2.3~2.6 * Excellent Current-to-Gain Characteristics

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD2151 Silicon NPN epitaxial planar type Unit: mm Symbol Rating Unit Collector-base voltage (Emitter open) VCBO 130 V Collector-emitter voltage (Base open) VCEO 80 V Emitter-base voltage (Collector open)

power transistor audio amplifier 100w

Contextual Info: TOSHIBA 2SD2155 Transistor Silicon NPN Triple Diffused Type Power Amplifier Applications F e a tu re s • Complementary to 2SB1429 • Recommended for 100W High Fidelity Audio Frequency - Amplifier Output Stage Absolute Maximum Ratings Ta = 25 C CHARACTERISTIC

Contextual Info: SILICON NPN TRIPLE DIFFUSED TYPE 2SD2155 P O WE R A M P L I F I E R AP P L I C A T I O N S . Unit in mm . Complementary to 2SB1429 JZJ~3.3±0.2 20.5MAX . Recommend for 100W High Fiderity Audio Frequency Amplifier Output Stage. 3.0 M A XI MU M RATINGS +0.3