2SD215 Search Results

2SD2157

Abstract: 2SD2157A
Contextual Info: 2SD2157, 2SD2157A Power Transistors 2SD2157, 2SD 2157A P a c k a g e D im e n s io n s Silicon NPN Triple-D iffused Planar D arlington Type P o w e r A m p lifie r • F e a tu re s • High D C c u rre n t gain h tF • High sp eed sw itch in g • “Fu ll P a c k ” p ackage for sim plified m ounting on a h e a t sink with

2SD2156

Abstract: 2SD215 2SD2156A
Contextual Info: Power Transistors 2SD215Ó, 2SD2156A 2SD2156, 2SD2156A Silicon NPN Triple-Diffused Planar Type High DC Current Gain • Features Package Dimensions Power Amplifier h FE , • High DC c u rre n t gain (Iife) (Iife ) • “Full Pack” package for simplified m ounting on a heat sink with one

2SD2153 SMD

Abstract: DN marking 2SD2153 SMD Transistor DN sot-89 marking dn
Contextual Info: Transistors SMD Type High Gain Amplifier Transistor 2SD2153 SOT-89 Unit: mm +0.1 4.50-0.1 Features +0.1 1.50-0.1 +0.1 1.80-0.1 +0.1 2.50-0.1 Excellent DC current gain characteristics. 2 3 +0.1 0.53-0.1 +0.1 0.44-0.1 2.60 +0.1 -0.1 +0.1 0.80-0.1 1 +0.1 0.48-0.1

Contextual Info: 2SD2155 TOSHIBA TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2 S D 2 1 55 Unit in mm PO W ER AM PLIFIER APPLICATIONS ¿ ± 3.3 • • 0.2 Complementary to 2SB1429 Recommend for 100W High Fidelity Audio Frequency Amplifier Output Stage. M A X IM U M RATINGS Ta = 25°C

2SB1429

Abstract: 2SD2155
Contextual Info: Inchange Semiconductor Product Specification 2SB1429 Silicon PNP Power Transistors DESCRIPTION ・With TO-3PL package ・Complement to type 2SD2155 APPLICATIONS ・Power amplifier applications ・Recommend for 100W high fidelity audio frequency amplifier output stage

2SD2151

Contextual Info: Power Transistors 2SD2151 Silicon NPN epitaxial planar type Unit: mm • Absolute Maximum Ratings TC = 25°C Parameter Rating Unit Collector to base voltage VCBO 130 V Collector to emitter voltage VCEO 80 V Emitter to base voltage VEBO 7 V Peak collector current

Contextual Info: Transistors Low-frequency Transistor 20V, 3A 2SD2150/2SC4115S/2SD2264 •F e a tu re s 1 ) • E x t e r n a l d im e n s io n s (U nits: m m ) LOW V cE(sat). VcE(sat) = 0.2V (Typ.) (Ic / I 2) b = 2 A /0 .1 A ) E x c e lle n t c u rre n t g a in c h a ra c te ris ­

Transistor MARKING CODE AW SOT89

Abstract: Transistor marking 0.5 sot-89 MARKING CODE 4A transistors 2sd 2SD2153 T100 Transistor MARKING CODE AW SOT-89 oc sc62
Contextual Info: 2SD2153 Transistor, NPN Features Dimensions Units : mm • available in MPT3 (MPT, SOT-89, SC-62) package • package marking: 2SD2153; DIM-*, where ★ is hFE code 2SD2153 (MPT3) 1.6 * 0 1 ?T. zH . it sf • excellent current-to-gain characteristics • low collector saturation voltage,

Contextual Info: Transistors Low Frequency Transistor 20V, 3A 2SD2150 / 2SC4115S / 2SD2264 FFeatures 1) Low VCE(sat). VCE(sat) = 0.2V (Typ.) (IC / IB = 2A / 0.1A) 2) Excellent current gain characteristics. 3) Complements the 2SB1424 / 2SA1585S. FExternal dimensions (Units: mm)

Contextual Info: h ~7 > V 7 . $ /Transistors 2 S 2 D 1 5 2SD2150 1 * S yT J t f l s - i - B NPN y V 3 > Nÿ >y Epitaxial Planar NPN Silicon Transistor 1ì£^ J&^^iSi|Ìffl/Low Freq. Power Amp. 5 T -7 fi\r/D im e n s io n s Unit : mm) 1 ) VcE(sat) V c E (s a t)= 0 .5 V (M ax.)

2SD2153

Abstract: T100 ROHM marking hFE ROHM marking hFE CODE
Contextual Info: High gain amplifier transistor 25V, 2A 2SD2153 Dimensions (Unit : mm) Features 1) Low saturation voltage, typically VCE(sat) = 0.12V at IC = IB = 1A / 20mA 2) Excellent DC current gain characteristics. 4.0 2.5 0.5 1.6 (2) 4.5 (1) 0.5 3.0 1.5 0.4 1.0

6551

Abstract: 9848 2SD2150 300-24
Contextual Info: SPICE PARAMETER 2SD2150 by ROHM TR Div. * 2SD2150 NPN BJT model * Date: 2006/12/14 .MODEL 2SD2150 NPN + IS=500.00E-15 + BF=300.24 + VAF=23.700 + IKF=13.956 + ISE=500.00E-15 + NE=1.6551 + BR=105.07 + VAR=100 + IKR=.75363 + ISC=1.9215E-9 + NC=2.1772 + NK=.97444

Contextual Info: 2SD2150Q Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)20 V(BR)CBO (V) I(C) Max. (A)3.0 Absolute Max. Power Diss. (W)2.0 Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) @I(B) (A) (Test Condition)

2SD2158

Abstract: 2SD2158A
Contextual Info: 2SD2158, 2SD2158A Power Transistors 2SD 2158, 2SD 2158A Silicon NPN Triple-Diffused Planar Type High DC C urrent Gain Package Dim ensions Power A m plifier Ii f e , • Features U n it 1 mm 4 .4 m a x . 10.2max. 5.7max. • H igh D C c u r r e n t gain (h FE)

0-12v

Abstract: 2SD2153 T100
Contextual Info: 2SD2153 Transistors High gain amplifier transistor 25V, 2A 2SD2153 zExternal dimensions (Unit : mm) zFeatures 1) Low saturation voltage, typically VCE(sat) = 0.12V at IC = IB = 1A / 20mA 2) Excellent DC current gain characteristics. 4.0 2.5 0.5 1.6 (2) 4.5

2SB1424

Abstract: 2SD2150 T100
Contextual Info: 2SD2150 Transistors Low Frequency Transistor 20V, 3A 2SD2150 zExternal dimensions (Unit : mm) zFeatures 1) Low VCE(sat). VCE(sat) = 0.2V(Typ.) （IC / IB = 2A / 0.1A） 2) Excellent current gain characteristics. 3) Complements the 2SB1424. 2SD2150 0.5±0.1

Contextual Info: i TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE " « n - M 'M l ZSB14Z9 POWER AMPLIFIER APPLICATIONS. Unit in mm 20.5MAX . Complementary to 2SD2155 f m . Recommend for 100W High Fiderity Audio Frequency Amplifier Output Stage. MAXIMUM RATINGS Ta-25°C

2SB1429

Contextual Info: 2SB1429 SILICON PNP TRIPLE DIFFUSED TYPE POWER A MPL I F I E R APPLICATIONS. Unit in m m 20.5MAX . C omplementary to 2SD2155 # 3 .3 ±0.2 . R ecommend for 100W H i g h Fiderity A udio F requency Ampl i f i e r Output Stage. 2.5 3.0 +2.5 1 .0 -0 .2 5 MA XI M U M RATINGS Ta~25°C

Contextual Info: Power Transistors 2SD215Ó, 2SD2156A 2SD2156, 2SD2156A Silicon NPN Triple-Diffused Planar Type Package Dimensions High DC Current Gain hFE , Power Amplifier U n it I m m 4 .4 m a x . 1 0 .2 m a x . • Features 5 .7 m a x . • H ig h D C c u r r e n t g a in ( h FE)

Contextual Info: 2SB1427 2SD2153 Transistors I Power Transistor 20V, —2A 2SB1427 •F e a tu re « •A b s o lu te maximum ratings (T a = 2 5 t:) 1 ) LowVcE(Mt>. ( T y p .— 0 .5 V a t Ic/ I b = — 1 /— 5 0 m A ) Parameter 2 ) E x c e lle n t D C c u rre n t g a in c h a ra c te ris tic s .

smd transistor marking cf

Abstract: CF marking transistor smd cf smd marking CF 2SD2150 SOT-89 smd marking CF
Contextual Info: Transistors SMD Type Low Frequency Transistor 2SD2150 SOT-89 Unit: mm 4.50 1.50 +0.1 -0.1 +0.1 -0.1 +0.1 1.80-0.1 +0.1 2.50-0.1 Low VCE sat . 1 2 3 +0.1 0.53-0.1 +0.1 0.48-0.1 +0.1 0.44-0.1 2.60 +0.1 -0.1 NPN silicon transistor. +0.1 0.80-0.1 Excellent DC current gain characteristics.

Contextual Info: Power Transistors 2SD2156, 2SD2156A Silicon NPN triple diffusion planar type For power amplification with high forward current transfer ratio Unit: mm 0.7±0.1 10.0±0.2 2.7±0.2 Parameter TC=25˚C Symbol Collector to 2SD2156 base voltage 2SD2156A Collector to

Contextual Info: Power Transistors 2SD2158, 2SD2158A Silicon NPN triple diffusion planar type For power amplification with high forward current transfer ratio • Features High foward current transfer ratio hFE Satisfactory linearity of foward current transfer ratio hFE Full-pack package which can be installed to the heat sink with

2SD2150

Contextual Info: 2SD2150 NPN Epitaxial Planar Transistors SOT-89 P b Lead Pb -Free 1 1. BASE 2. COLLECTOR 3. EMITTER 2 3 ABSOLUTE MAXIMUM RATINGS (TA=25˚C) Symbol Limits Unit Collector-Base Voltage VCBO 40 V Collector-Emitter Voltage VCEO 20 V Emitter-Base Voltage VEBO 6