VC60 Search Results

Contextual Info: KSP55/56 PNP EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR TO-92 • Collector-Em ltter Voltage: VC60 = KSP55: 60V KSP56: 80V • Collector Dissipation: Pc max =625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Symbol Collector-Base Voltage Rating

Contextual Info: 5x3mm SMD VCXO With Tri-State E/D Function AEL VC601-Series 1.75Hz to 54.00 MHz Frequency Control Products Operating Conditions Operating Temperature Range Standard Industrial -10oC to +70oC -40oC to +85oC ±15 ±20 ±25 ±30 ±50 ±100 Various Option Codes

CD423

Abstract: SA1015 2NS400 PN544 T1S91 BC309C BC212
Contextual Info: Maximum Ratings Type No. V CSO V Min VC60 (V) Electrical Characteristica (Ta=25'C, Unlesa Othacwise Spccified) £60 Pd (W) (V) (A) Mm 8Tc=25°! 2N3702 0.625 2N3905 0.625 2N3906 hFE e 'cao vce tes VCE (pA) 0 (V) (liA) #(V) Max Max Min 0.1 60 20 *0.05 0.625 0.2

2SD1166

Abstract: 50AS IDT755 darlington NPN 600V 8a
Contextual Info: TOSHIBA -CDISCRETE/OPTOl Sb DE DDD7Bfll 2 y 9Q 9 7 2 S 0 T O S HIBA 56C CDISCRETE/OPTO 07681 T-33-35 S IL IC O N NPN T R IP L E D IF F U SE D M E SA TYPE _ D A R L IN G T O N POWER) Unit in ram HIGH POWER SWITCHING APPLICATION 2 -£f&2 ±a 2

VC60

Abstract: E175067 D30VC60 10-32 UNF M5 vc20 VC80 diode
Contextual Info: D30 VC20 … D30 VC80 Silicon-Twin Rectifiers Center tap Silizium-Doppeldioden Mittelpunktschaltung Nominal current Nennstrom Type ”F” 30 A Alternating input voltage Eingangswechselspannung 60…250 V Plastic case with alu-bottom Kunststoffgehäuse mit Alu-Boden

DIODE D60

Abstract: VC100 VC120 VC20 VC40 VC60 VC80 VC80 diode
Contextual Info: D60 VC20 … D60 VC120 Silicon-Twin Rectifiers Silizium-Doppeldioden Nominal current Nennstrom 60 A Alternating input voltage Eingangswechselspannung 60…800 V Plastic case with alu-bottom Kunststoffgehäuse mit Alu-Boden Dimensions Abmessungen 28.5 x 28.5 x 10 [mm]

VC601

Contextual Info: Surface Mounted SMD VCXO 6-Pad with Enable/Disable 5x3mm Standard TTL/CMOS Compatible OutputSMD VCXO Frequency Control Products Current part - Recommended for new designs Static sensitive device Frequency Stability Options Operating Conditions Operating Temperature Range

VC-6020

Abstract: Leader 3100A HITACHI VC-6045 hitachi oscilloscope v-1150 VC-5460 LBO-5825 VC-6523 V-1150 Leader 8020 Oscilloscope metrix OX863
Contextual Info: Oscilloscope Probes and Accessories Oscilloscope Probes and Accessories ACCESS FAX ON DEMAND This symbol indicates immediate Fax-On-Demand Technical Information is available. Dial U.S. (800) 444-6785, (Outside U.S.) (909) 469-2991. Enter the Pomona Access number (shown in italics) when prompted.

GE SC160B triac

Abstract: SC160B 3kw triac H11AG1 H11AG2 gemov relay 12v 100A C2079 H11AG3 ST2122
Contextual Info: PHOTOTRANSISTOR OPTOCOUPLERS OPTOELECTRONICS H11AG1 H11AG2 H11AG3 PACKAGE DIMENSIONS DESCRIPTION The H11AG series consists of a gallium-aluminumarsenide infrared emitting diode coupled with a silicon phototransistor in a dual in-line package. This device provides the unique feature of high current transfer ratio

TAG 8510

Abstract: VC5602V036 hfc 8081 be
Contextual Info: VC5602 VC6602 1.23 Megapixel digital video CMOS image sensor Features Description • SXVGA resolution 1280 x 960 ■ 1/3 inch format lens compatible ■ 3v3 I/O and 1V8 core digital supplies ■ 3v3 video and audio supplies ■ On board 10-bit ADC ■ On board audio pre-amplifier

GX 6107

Abstract: SM78K SM78K0 SM78K0S SM78K4 U15255J
Contextual Info: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社

samsung tv

Abstract: samsung SSE
Contextual Info: SAMSUNG SEMICONDUCTOR 14E D |? 1 f c ,4 I 4 Z a a Q 7 t, S i 3 I INC N PN T R IP L E D IF FU SED P L A N A R SIL IC O N T R A N SIST O R KSD5006 — COLOR TV HORIZONTAL OUTPUT APPLICATIONS HIGH Collector-Base Voltage T-S3-13 V Cb o = 1 5 0 0 V ABSOLUTE MAXIMUM RATINGS Ta= 2 5pC

Contextual Info: 17E D • 7 HT S 7 ti4 □DDQ 3 3 ci 4 'BIG IDEAS IN BIG POWER" H p H P o w POUERTECH INC ■ e r T e c h 1 0 0 AMPERE POWER DARLINGTON T -3 3 -Z ^ MT-6002 FEATURES Vcoo. 4 00V •cm.100A V cb0. 4 50V

VC-6041

Abstract: HITACHI DENSHI VC-6041 VC-6041 tabai pl-2gm 500 watt inverter 12v dc to 220 ac PSA-150D PLZ-72W HIOKI IR METER Yokogawa 3226 hioki 3182 RWS30A-15
Contextual Info: QUALITY TEST DATA RW S30A A n E I\1 IC * L A M B O \ p a 7 6 1 - 5 3 - 0 1 I N D EX 1. Specifications 2- Evaluation Data 2 - 1 Circuits used for determination of - 1 Steady state data (2) Warm up voltage drift (3) Over current protection (O-C-P) characteristics

D30VC60

Abstract: VC40 VC80 vc20 VC60
Contextual Info: D30 VC20 … D30 VC80 Silizium-Doppeldioden Mittelpunktschaltung Silicon-Twin Rectifiers Center tap Nominal current Nennstrom Type ”F” 30 A Alternating input voltage Eingangswechselspannung 60…250 V Plastic case with alu-bottom Kunststoffgehäuse mit Alu-Boden

Contextual Info: VC5602 VC6602 1.23 Megapixel digital video CMOS image sensor Features Description • SXVGA resolution 1280 x 960 ■ 1/3 inch format lens compatible ■ 3v3 I/O and 1V8 core digital supplies ■ 3v3 video and audio supplies ■ On board 10-bit ADC ■ On board audio pre-amplifier

Contextual Info: IHfOll Devices, \nt i l . '‘•rH.O S P E C I F I C A T I O N S , SO L IT R O N 8368602 D EV X Q E S E b P C ù ù Z : NO.: — I NC — TYPE: $ L A ò tO B tìPJòStt-ieMJO PfitOS/L TO~5 u— - -^ _ -C A S E : M A X IM U M R A T IN G S

BFR94A

Contextual Info: tSsmi-Gonau.cko'i iPioaucti, Dna. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 378-8960 BFR94A NPN 3.5 GHz wideband transistor DESCRIPTION PINNING NPN resistance-stabilized transistor in a SOT122E capstan envelope.

VC60

Abstract: VC80 vc20 VC80 diode VC40 VC80F
Contextual Info: D30 VC20 … D30 VC80 Silicon-Twin Rectifiers Center tap Silizium-Doppeldioden Mittelpunktschaltung Nominal current Nennstrom Type ”F” 30 A Alternating input voltage Eingangswechselspannung 60…250 V Plastic case with alu-bottom Kunststoffgehäuse mit Alu-Boden

transistor npn d 2058

Abstract: 2PD601A
Contextual Info: Philips Semiconductors BB bb53T31 N APIER 002b055 473 IA P X NPN general purpose transistor FEATURES objective specification b7E PHILIPS/DISCRETE 2PD601; 2PD601A PIN CONFIGURATION • High DC current gain • Low collector-emitter saturation voltage. DESCRIPTION

PENTIUM-120

Abstract: SM78K0S SM78K4 SM78K SM78K0 U15254E RA78K4 Assembler Package operation U15254E U15373E
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

DIODE D60

Abstract: D60VC120F
Contextual Info: D60 VC20 F … D60 VC120 F Silicon-Twin Rectifiers Silizium-Doppeldioden Nominal current Nennstrom 60 A Alternating input voltage Eingangswechselspannung 60…800 V Plastic case with alu-bottom Kunststoffgehäuse mit Alu-Boden Dimensions Abmessungen 28.6 x 28.6 x 10 [mm]

G60N

Abstract: Thermistor pspice mosfet mark code G4 ic 8870 ORCAD PSPICE BOOK AN1256 IRFZ34 MBR340 TC1410N 100n00
Contextual Info: AN1256 Microchip’s Power MOSFET Driver Simulation Models Author: Cliff Ellison Microchip Technology Inc. Ron Wunderlich (Innovative Ideas and Design) INTRODUCTION The simulation models for Microchip’s power MOSFET drivers aid in the design and analysis of various circuits

varactor

Abstract: 1N3182 1N5138 1N3947 1N5136 K511 vc299 vc99 MIL-S-19500 1n3945
Contextual Info: Table of Contents ZENER DIODES Page K 1 2 0 -K 5 1 0 K511 - K681 1N4678 - 1N4714 1 N 4 6 1 4 - 1N4627 1N4099 - 1N4121 1N5518 - 1N5546 1N6082 - 1N6091 KZ43A - KZ100A KZ343A - KZ3100A KZ450 - KZ498 CURRENT REGULATOR AND VARACTOR DIODES Page 9 9 9 10 10 11 11