GQG77FE Search Results

Contextual Info: SAMSUNG SEMICONDUCTOR INC KSB596 IME D | 7^4142 0007502 4 PNP EXITAXIAL SILICON TRANSISTOR — “ T - 3 3 - ^ ;- POWER AMPLIFIER APPLICATIONS • Complément to KSD526 10-220 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Symbol Co/lector-Base Voltage

transistor kt 801

Abstract: S/transistor kt 801 KT 802 transistor a05 801
Contextual Info: SAMSUNG S E MI CONDUCTOR INC MJE800/801/802/803 IME O | 7^4145 000770b NPN EPITAXIAL r - 33 SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN MIN hpE—750 @ lc= —1.5 and -2 .0 A DC MONOLITHIC CONSTRUCTION WITH BUILT-IN BASE-EMITTER RESISTORS TO-126 • Complementary to MJE700/701/702/703

Contextual Info: SAMS UN G SEM ICO ND UC TO R INC MJE170 14E 0 | 7 ^ 4 1 4 2 OOOÎbâT E | PN P EPITAXIAL SILIC O N TRAN SISTO R T " 3 3 - / 7 LO W P O W E R A U D IO A M P L IF IE R LO W CURRENT, HIGH S P E E D SW IT C H IN G A P P LIC A T IO N S A B S O L U T E M A X IM U M R A T IN G S Ta= 2 5 ° C

Contextual Info: SAMSUNG SE MICON DU CT OR MJE171 INC lqE 0 | QOG?^^ 2 | PNP EPITAXIAL SILICON TRANSISTOR T-33-17 LOW FREQUENCY AMPLIFIER LOW CURRENT, HIGH SPEED SWITCHING APPLICATION TO*126 ABSOLUTE MAXIMUM RATINGS Ta= 25 °C Characteristic • Coliector-Base Voltage • Collector-Emitter Voltage

Contextual Info: ¡SAMSUNG SEM IC ON DU CTOR MJE200 INC IME 0 | 7^4142 □ 0 Q 7 b tit NPN EPITAXIAL SILICON TRANSISTOR CÒ LLECTOR-EM ITTER SU STAINING VOLTAGE LOW CO LLECTOR-EM ITTER SATURATION VOLTAGE HIGH CU RREN T GAIN-BANDW IDTH PRODUCT-MIN fT=65MHz @ lc=100m A Complementary to MJE210

JE2955T

Abstract: JE2955
Contextual Info: SAMSUNG SEMICONDUCTOR IME O I INC MJE2955T 7*11,4142 G0077Gfl 5 | PNP SILICON TRANSISTOR T- GENERAL PURPOSE A n 6 SWITCHING APPLICATIONS DC CURRENT GAIN SPECIFIED TO 10 AMPERES 2 • High Current Galn-Bandwldth Product fT = 2MHz (MIN ABSOLUTE MAXIMUM RATINGS (Ta= 25°C )

MJE350 equivalent

Contextual Info: SAMSUNG S E M IC O N D U C T O R MJE350 INC IM E D J 7 ^ 4 :1 ,4 2 00077Q5 1 PNP EPITAXIAL SILICON TRANSISTOR T HIGH COLLECTOR-EMITtER SUSTAINING VOLTAGE HIGH VOLTAGE GENERAL PURPOSE APPLICATIONS SUITABLE FOR TRANSFORMER " 1 3 ~ i< f TO-128 Complementary to MJE340

JE180

Abstract: JE182
Contextual Info: SAMS UNG SEMICONDUCTOR INC MJE180/181/182 14E 0 § V'ItMlME ÜOO?t.cm NPN EPITAXIAL SILICO N TRANSISTOR D E SIG N E D FOR LOW PO W ER A U D IO . AM PLIFIER A N D LOW CU RREN T HIGH SP E E D SW ITCH IN G APPLICATIO N S A BSO LU TE M A X IM U M RA TING S Ta=25°C