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JE2955T Abstract: JE2955 Contextual Info: SAMSUNG SEMICONDUCTOR IME O I INC MJE2955T 7*11,4142 G0077Gfl 5 \| PNP SILICON TRANSISTOR T- GENERAL PURPOSE A n 6 SWITCHING APPLICATIONS DC CURRENT GAIN SPECIFIED TO 10 AMPERES 2 • High Current Galn-Bandwldth Product fT = 2MHz (MIN ABSOLUTE MAXIMUM RATINGS (Ta= 25°C )	OCR Scan	mje2955t g0077gfl gqg77fe je2955t +1je2955	PDF

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JE2955T

Abstract: JE2955
Contextual Info: SAMSUNG SEMICONDUCTOR IME O I INC MJE2955T 7*11,4142 G0077Gfl 5 | PNP SILICON TRANSISTOR T- GENERAL PURPOSE A n 6 SWITCHING APPLICATIONS DC CURRENT GAIN SPECIFIED TO 10 AMPERES 2 • High Current Galn-Bandwldth Product fT = 2MHz (MIN ABSOLUTE MAXIMUM RATINGS (Ta= 25°C )

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mje2955t g0077gfl gqg77fe je2955t +1

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