KSB596 Search Results

KSB596

Abstract: KSD526
Contextual Info: KSD526 NPN Epitaxial Silicon Transistor Power Amplifier Applications • Complement to KSB596 TO-220 1 1.Base Absolute Maximum Ratings * Symbol 2.Collector 3.Emitter Ta = 25°C unless otherwise noted Value Units VCBO Collector-Base Voltage Parameter 80 V VCEO

Contextual Info: KSB596 KSB596 Power Amplifier Applications • Complement to KSD526 1 TO-220 1.Base 2.Collector 3.Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Value Units VCBO Symbol Collector-Base Voltage Parameter - 80

Contextual Info: KSD526 KSD526 Power Amplifier Applications • Complement to KSB596 TO-220 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Parameter Collector-Base Voltage Value 80 Units

Contextual Info: SAMSUNG SEMICONDUCTOR INC KSB596 IME D | 7^4142 0007502 4 PNP EXITAXIAL SILICON TRANSISTOR — “ T - 3 3 - ^ ;- POWER AMPLIFIER APPLICATIONS • Complément to KSD526 10-220 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Symbol Co/lector-Base Voltage

KSD526

Abstract: KSB596
Contextual Info: NPN EPITAXIAL SILICON TRANSISTOR KSD526 POW ER AMPLIFIER A PPLICATIO NS • Com plem ent to KSB596 A BSOLUTE M AXIMUM RATINGS Characteristic Symbol Rating Unit Col lector-Base Voltage V cB O 80 V C ollector-Em itter Voltage VcEO 80 V Emitter-Base Voltage V ebo

Contextual Info: KSD526 NPN EPITAXIAL SILICON TRANSISTOR POWER AMPLIFIER APPLICATIONS TO -220 • Complement to KSB596 ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Dissipation Tc= 2 5 °C

Contextual Info: KSB596 PNP EPITAXIAL SILICON TRANSISTOR POWER AMPLIFIER A PPLICATIO NS • C om plem ent to KSD 526 ABSOLUTE MAXIMUM RATINGS R a tin g U n it C ollector-Base Voltage C h a ra c te ris tic V cB O Sym bol - 80 V C ollecto r-E m itte r Voltage V cE O - 80 V Em itter-Base Voltage

KSB596

Abstract: KSD526
Contextual Info: PNP EPITAXIAL SILICON TRANSISTOR KSB596 POW ER AMPLIFIER A PPLICATIO NS • C o m p le m e n t to K S D 5 2 6 A BSOLUTE M AXIMUM RATINGS R a tin g U n it C o lle c to r-B a s e V o lta g e C h a r a c te r is tic V cbO Sym bol - 80 V C o lle c to r-E m ltte r V o lta g e

Contextual Info: KSB596 PNP EPITAXIAL SILICON TRANSISTOR POWER AMPLIFIER APPLICATIONS • Complement to KSD526 ABSOLUTE MAXIMUM RATINGS Rating Unit VcBO -80 V Collector-Emitter Voltage VcEO -80 V Emitter-Base Voltage Collector Current V ebo - 5 V Base Current Ib -4 -0.4 A

Contextual Info: KSD526 NPN EPITAXIAL SILICON TRANSISTOR POW ER AMPLIFIER APPLICATIONS • Complement to KSB596 ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector-Base Vottage Collector-Emitter Voltage VcBO 80 VcEO 80 V V Emitter-Base Voltage Collector Current

KSB596

Abstract: KSD526
Contextual Info: KSD526 KSD526 Power Amplifier Applications • Complement to KSB596 TO-220 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Parameter Collector-Base Voltage Value 80 Units

Contextual Info: KSD526 NPN EPITAXIAL SILICON TRANSISTOR POWER AMPLIFIER APPLICATIONS TO-220 • Complement to KSB596 ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Dissipation TC=25°C

Contextual Info: KSD526 NPN Epitaxial Silicon Transistor Power Amplifier Applications • Complement to KSB596 TO-220 1 1.Base Absolute Maximum Ratings * Symbol 2.Collector 3.Emitter Ta = 25°C unless otherwise noted Value Units Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage

GE003

Contextual Info: KSD526 NPN EPITAXIAL SILICON TRANSISTOR POWER AMPLIFIER APPLICATIONS • Complement to KSB596 ABSOLUTE MAXIMUM RATINGS Rating Unit Collector-Base Voltage C haracteristic VcBO Symbol 80 V Collector-Emitter Voltage V ceo 80 V Emitter-Base Voltage V ebo 5 V Collector Current

KSB596

Abstract: KSD526
Contextual Info: KSB596 KSB596 Power Amplifier Applications • Complement to KSD526 TO-220 1 1.Base 2.Collector 3.Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Parameter Collector-Base Voltage Value - 80 Units

Contextual Info: KSB596 KSB596 Power Amplifier Applications • Complement to KSD526 TO-220 1 1.Base 2.Collector 3.Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Parameter Collector-Base Voltage Value - 80 Units

Contextual Info: PNP EXITAXIAL SILICON TRANSISTOR KSB596 POWER AMPLIFIER APPLICATIONS TO -220 • Com plem ent to KSD526 ABSOLUTE MAXIMUM RATINGS C h a ra cte ris tic Rating Unit -8 0 -8 0 -5 -4 -0 .4 30 1 50 -5 5 ^ 1 5 0 V V V A A W "C ”C S ym bol Collector-Base Voltage

fjaf6812

Abstract: tip41 darlington fjaf6920 BUT12(A)F KSA1010 transistor bd140-15 bu408 equivalent FJL6920 equivalent fjl6820 FJL6920
Contextual Info: Discrete Bipolar Power Transistor – General Purpose Part Number IC A VCEO (V) VCBO (V) VEBO (V) PC (W) hFE VCE (sat) Min Max @ IC (A) Typ (V) Max (V) TO-126 NPN Configuration KSC2682 0.1 180 180 5 8 100 320 0.01 0.12 0.5 KSC3502 0.1 200 200 5 5 40 320

BJT BD139

Abstract: TIP416 ksh200 equivalent BD243 ksh50 power BJT BD242 tip426 BD53 kse13003
Contextual Info: Discrete Power BJT General Purpose Products IC A VCEO (V) VCBO (V) VEBO (V) hFE PC (W) VCE (sat) Min Max @ IC (A) Typ (V) Max (V) TO-126 NPN Configuration KSC2682 0.1 180 180 5 8 100 320 0.01 0.12 0.5 KSC3502 0.1 200 200 5 5 40 320 0.01 - 0.6 KSC2258 0.1

BUV48I

Abstract: BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046
Contextual Info: BIPOLAR TRANSISTOR INTRODUCTION TO BIPOLAR CROSS REFERENCE In order to improve our overall service, SGS-THOMSON has introduced a system of preferred transistor sales types. The following cross-reference is intended as a guide to identify sales types that may be suitable

2N5657 equivalent

Abstract: 2SA1046 BU326 BU108 BU100 2SC2331 Y tip47 419 2N3792 application notes
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5655 2N5656 2N5657 Plastic NPN Silicon High-Voltage Power Transistor . . . designed for use in line–operated equipment such as audio output amplifiers; low–current, high–voltage converters; and AC line relays.

MJE494

Abstract: 2SC1419 BD 804 2SD675 MJE104 BD581 BD135 CURVES MJ1000 DTS-4041 2N5037
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD157 BD158 BD159 Plastic Medium Power NPN Silicon Transistor . . . designed for power output stages for television, radio, phonograph and other consumer product applications. 0.5 AMPERE POWER TRANSISTORS NPN SILICON 250 – 300 – 350 VOLTS

2SD669 equivalent

Abstract: BD801 BDY29 equivalent BU108 2SC2080 2SD436 2N6021 BD345 tip122 D-PAK package 2SD544
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6609 See 2N3773 Darlington Silicon Power Transistors 2N6667 2N6668 . . . designed for general–purpose amplifier and low speed switching applications. • High DC Current Gain — hFE = 3500 (Typ) @ IC = 4 Adc • Collector–Emitter Sustaining Voltage — @ 200 mAdc

2SC495

Abstract: NSP41A BU108 transistor BD614 MOTOROLA 2SA663 BD4122 BD661 MJ1000 NSP2100 D45VH4 similar
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJF6107 Power Transistor For Isolated Package Applications PNP SILICON POWER TRANSISTOR 7 AMPERES 70 VOLTS 34 WATTS Designed for general–purpose amplifier and switching applications, where the mounting surface of the device is required to be electrically isolated from the heatsink