KSD526 Search Results

KSB596

Abstract: KSD526
Contextual Info: KSD526 NPN Epitaxial Silicon Transistor Power Amplifier Applications • Complement to KSB596 TO-220 1 1.Base Absolute Maximum Ratings * Symbol 2.Collector 3.Emitter Ta = 25°C unless otherwise noted Value Units VCBO Collector-Base Voltage Parameter 80 V VCEO

Contextual Info: KSB596 KSB596 Power Amplifier Applications • Complement to KSD526 1 TO-220 1.Base 2.Collector 3.Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Value Units VCBO Symbol Collector-Base Voltage Parameter - 80

Contextual Info: KSD526 KSD526 Power Amplifier Applications • Complement to KSB596 TO-220 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Parameter Collector-Base Voltage Value 80 Units

Contextual Info: SAMSUNG SEMICONDUCTOR INC KSB596 IME D | 7^4142 0007502 4 PNP EXITAXIAL SILICON TRANSISTOR — “ T - 3 3 - ^ ;- POWER AMPLIFIER APPLICATIONS • Complément to KSD526 10-220 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Symbol Co/lector-Base Voltage

KSD526

Abstract: KSB596
Contextual Info: NPN EPITAXIAL SILICON TRANSISTOR KSD526 POW ER AMPLIFIER A PPLICATIO NS • Com plem ent to KSB596 A BSOLUTE M AXIMUM RATINGS Characteristic Symbol Rating Unit Col lector-Base Voltage V cB O 80 V C ollector-Em itter Voltage VcEO 80 V Emitter-Base Voltage V ebo

Contextual Info: KSD526 NPN EPITAXIAL SILICON TRANSISTOR POWER AMPLIFIER APPLICATIONS TO -220 • Complement to KSB596 ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Dissipation Tc= 2 5 °C

Contextual Info: NPN EPITAXIAL SILICON TRANSISTOR KSD526 POWER AMPLIFIER APPLICATIONS • Com plem ent to K S B 5 9 6 ABSOLUTE MAXIMUM RATINGS C h a ra c te ris tic Sym bol R ating Unit C o lle c to r-B a se V oltage VcBO 80 C o llector-Em itter V oltag e VcEO 80 V V E m itter-B ase V oltag e

Contextual Info: KSB596 PNP EPITAXIAL SILICON TRANSISTOR POWER AMPLIFIER APPLICATIONS • Complement to KSD526 ABSOLUTE MAXIMUM RATINGS Rating Unit VcBO -80 V Collector-Emitter Voltage VcEO -80 V Emitter-Base Voltage Collector Current V ebo - 5 V Base Current Ib -4 -0.4 A

Contextual Info: KSD526 NPN EPITAXIAL SILICON TRANSISTOR POW ER AMPLIFIER APPLICATIONS • Complement to KSB596 ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector-Base Vottage Collector-Emitter Voltage VcBO 80 VcEO 80 V V Emitter-Base Voltage Collector Current

KSB596

Abstract: KSD526
Contextual Info: KSD526 KSD526 Power Amplifier Applications • Complement to KSB596 TO-220 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Parameter Collector-Base Voltage Value 80 Units

Contextual Info: KSD526 NPN EPITAXIAL SILICON TRANSISTOR POWER AMPLIFIER APPLICATIONS TO-220 • Complement to KSB596 ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Dissipation TC=25°C

Contextual Info: KSD526 NPN Epitaxial Silicon Transistor Power Amplifier Applications • Complement to KSB596 TO-220 1 1.Base Absolute Maximum Ratings * Symbol 2.Collector 3.Emitter Ta = 25°C unless otherwise noted Value Units Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage

GE003

Contextual Info: KSD526 NPN EPITAXIAL SILICON TRANSISTOR POWER AMPLIFIER APPLICATIONS • Complement to KSB596 ABSOLUTE MAXIMUM RATINGS Rating Unit Collector-Base Voltage C haracteristic VcBO Symbol 80 V Collector-Emitter Voltage V ceo 80 V Emitter-Base Voltage V ebo 5 V Collector Current

Contextual Info: PNP EPITAXIAL SILICON TRANSISTOR KSB596 POWER AMPLIFIER APPLICATIONS • C om plem ent to KSD526 ABSOLUTE MAXIMUM RATINGS Rating Unit C ollector-B ase Voltage Characteristic V cbO Sym bol - 80 V C ollector-E m ltter Voltage V cE O - 80 V Em itter-Base Voltage

Contextual Info: KSB596 KSB596 Power Amplifier Applications • Complement to KSD526 TO-220 1 1.Base 2.Collector 3.Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Parameter Collector-Base Voltage Value - 80 Units

Contextual Info: PNP EXITAXIAL SILICON TRANSISTOR KSB596 POWER AMPLIFIER APPLICATIONS TO -220 • Com plem ent to KSD526 ABSOLUTE MAXIMUM RATINGS C h a ra cte ris tic Rating Unit -8 0 -8 0 -5 -4 -0 .4 30 1 50 -5 5 ^ 1 5 0 V V V A A W "C ”C S ym bol Collector-Base Voltage

fjaf6812

Abstract: tip41 darlington fjaf6920 BUT12(A)F KSA1010 transistor bd140-15 bu408 equivalent FJL6920 equivalent fjl6820 FJL6920
Contextual Info: Discrete Bipolar Power Transistor – General Purpose Part Number IC A VCEO (V) VCBO (V) VEBO (V) PC (W) hFE VCE (sat) Min Max @ IC (A) Typ (V) Max (V) TO-126 NPN Configuration KSC2682 0.1 180 180 5 8 100 320 0.01 0.12 0.5 KSC3502 0.1 200 200 5 5 40 320

BJT BD139

Abstract: TIP416 ksh200 equivalent BD243 ksh50 power BJT BD242 tip426 BD53 kse13003
Contextual Info: Discrete Power BJT General Purpose Products IC A VCEO (V) VCBO (V) VEBO (V) hFE PC (W) VCE (sat) Min Max @ IC (A) Typ (V) Max (V) TO-126 NPN Configuration KSC2682 0.1 180 180 5 8 100 320 0.01 0.12 0.5 KSC3502 0.1 200 200 5 5 40 320 0.01 - 0.6 KSC2258 0.1

BUV48I

Abstract: BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046
Contextual Info: BIPOLAR TRANSISTOR INTRODUCTION TO BIPOLAR CROSS REFERENCE In order to improve our overall service, SGS-THOMSON has introduced a system of preferred transistor sales types. The following cross-reference is intended as a guide to identify sales types that may be suitable

2N5657 equivalent

Abstract: 2SA1046 BU326 BU108 BU100 2SC2331 Y tip47 419 2N3792 application notes
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5655 2N5656 2N5657 Plastic NPN Silicon High-Voltage Power Transistor . . . designed for use in line–operated equipment such as audio output amplifiers; low–current, high–voltage converters; and AC line relays.

MJE494

Abstract: 2SC1419 BD 804 2SD675 MJE104 BD581 BD135 CURVES MJ1000 DTS-4041 2N5037
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD157 BD158 BD159 Plastic Medium Power NPN Silicon Transistor . . . designed for power output stages for television, radio, phonograph and other consumer product applications. 0.5 AMPERE POWER TRANSISTORS NPN SILICON 250 – 300 – 350 VOLTS

2SD669 equivalent

Abstract: BD801 BDY29 equivalent BU108 2SC2080 2SD436 2N6021 BD345 tip122 D-PAK package 2SD544
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6609 See 2N3773 Darlington Silicon Power Transistors 2N6667 2N6668 . . . designed for general–purpose amplifier and low speed switching applications. • High DC Current Gain — hFE = 3500 (Typ) @ IC = 4 Adc • Collector–Emitter Sustaining Voltage — @ 200 mAdc

2SC495

Abstract: NSP41A BU108 transistor BD614 MOTOROLA 2SA663 BD4122 BD661 MJ1000 NSP2100 D45VH4 similar
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJF6107 Power Transistor For Isolated Package Applications PNP SILICON POWER TRANSISTOR 7 AMPERES 70 VOLTS 34 WATTS Designed for general–purpose amplifier and switching applications, where the mounting surface of the device is required to be electrically isolated from the heatsink

"Tektronix 475"

Abstract: equivalent 2n6488 TIP42C EQUIVALENT BU108 motorola darlington power transistor motorola 266 TO-204AA transistor D45H11 equivalent replacement pnp bux TRANSISTOR REPLACEMENT table for transistor tip3055 equivalent
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUX48 BUX48A SWITCHMODE II Series NPN Silicon Power Transistors 15 AMPERES NPN SILICON POWER TRANSISTORS 400 AND 450 VOLTS V BR CEO 850 – 1000 VOLTS V(BR)CEX 175 WATTS The BUX 48/BUX 48A transistors are designed for high–voltage, high–speed,