VARACTOR Search Results

Contextual Info: HE404B/HEM404B BOWEI Broadband VCO BOWEI INTEGRATED CIRCUITS CO.,LTD. Typical Performance Frequency vs Tuning Voltage Frequency MHz 2200 Features ●Low phase noise ●Hyperabrupt varactor 1980 1760 1540 1320 broad tuning bandwith ●Perfect tuning linearity

Contextual Info: HE402B/HEM402B BOWEI Broadband VCO BOWEI INTEGRATED CIRCUITS CO.,LTD. Typical Performance Frequency MHz Frequency vs Tuning Voltage Features ●Low phase noise ●Hyperabrupt varactor octave bandwidth ●Perfect tuning linearity ●Reliable thin film hybrid construction

GC15000

Abstract: TM 937 GC15001 GC15001-00 GC15002-00 GC15003-00 GC15004-00 GC15013 GC15002
Contextual Info: GC15001 – GC15013 TUNING DIODES Frequency Linear Tuning Varactors TM RoHS Compliant KEY FEATURES A Frequency Linear Tuning Varactor FLTVAR is a silicon epitaxial mesa device, designed to provide wideband Linear Tuning in VCO and filter applications.

car central lock

Abstract: Car Central lock system circuit diagram of car central lock system TH71082
Contextual Info: TH71082 868/915MHz ASK Transmitter / LO Source Features ! Fully integrated, PLL-stabilized VCO ! Flexible frequency range from 800 MHz to 930 MHz ! ASK achieved by on/off keying of internal power amplifier ! FM possible with external varactor ! Wide power supply range from 2.2 V to 5.5 V

ci 740

Abstract: 1C45 DH744
Contextual Info: SILICON TUNING VARACTORS This series o f high Q epi-junction m icrow ave tuning varactors 45 V incorporates a passivated mesa tech n olog y. It is well suited for fre q u e n cy tuning a pp lica tio ns up to X band. CHIP AND PACKAGED DIODES CHIP OIODES TUNING RATIO

699h

Contextual Info: O rd e rin g n u m b e r: EN 699H , SAHYO SVC321SPA N 0 .6 9 9 H Diffused Junction Type Silicon Diode Varactor Diode IOCAP for AM Receiver Electronic Tuning Features • The SVC321SPA is a varactor diode with a good linearity and high capacitance ratio that is capable of

svc251

Contextual Info: Ordering number: EN 774E No.774E i SVC251SPA Diffused Junction Type Silicon Diode Varactor Diode for AFC, CB PLL Features The SVC251SPA is a varactor diode of hyper abrupt junction structure fabricated with ion implantation technology. It is intended for use in AFC, CB PLL VCO cicuitry.

Discrete Semiconductors

Abstract: passive rf products
Contextual Info: GaAs RF ICs and Modules Index 03Alpha ~ JC ONEX A NT GaAs RF ICs and Modules. 4 Amplifiers. 9 Discrete Semiconductors . 12 Varactor

74008

Abstract: 74067 74004 74016 74220 c 74067 cI 74150 74470 ci 74390 74006
Contextual Info: •'<% SILICON TUNING VARACTORS / This series o f high tuning ratio e pi-ju nctio n m icro w a ve tuning varactors 90 V incorporates a passivated mesa te ch n o lo g y. It is well suited for fre q u e n cy tuning a p p lica tio n s up to L b an d . CHIP AND

MV1403

Abstract: 210PF
Contextual Info: MV1403 TUNING VARACTOR DESCRIPTION: The ASI MV1403 is a Silicon Hyper-Abrupt Junction Microwave Tuning Varactor Diode. PACKAGE STYLE D0-204AA FEATURES: • High Capacitance: 140 – 210pF • High Q: 200 Min. Millimeters MAXIMUM RATINGS 12 V V I 250 mA PDISS

am varactor

Abstract: KV1583A KV1581 KV1581A-3
Contextual Info: AM Varactor Diodes Part no. KV1563M Capacitance pF VRmax (V) min 428.0 20 typ 100.0 20.0 428.0 KV1563BM 20 27.0 506.0 100.0 20.0 428.0 KV1564M KV1580 KV1580A-1 KV1580NT KV1581 KV1581A-2 KV1581A-3 KV1582M KV1583A KV1583BM 20 30 30 30 30 30 30 30 30 30 max

GVD30503-001

Contextual Info: Preliminary Data - January 1999 GVD30500 SERIES SPRAGUE-GOODMAN ELECTRONICS. INC. WIDEBAND HYPERABRUPT TUNING VARACTOR DIODES FEATURES SPECIFICATIONS • • • • • • Reverse breakdown voltage at 10 pA DC at 25°C: 25 V min Maximum reverse leakage current (at -20 V) at 25“C: 0.05 pA DC

silicon epitaxial mesa diode

Abstract: GVD1404-001
Contextual Info: Preliminary Data - January 1999 GVD1400 SERIES SPRAfilli-GOODMAN ELECTRONICS, INC. SUPER HYPERABRUPT TUNING VARACTOR DIODES FEATURES SPECIFICATIONS • • • • • • • Reverse breakdown voltage at 10 pA DC at 25°C: 12 V min Maximum reverse leakage current (at -10 V) at 25°C: 0.05 pA DC

Contextual Info: Preliminary Data - January 1999 GVD30600 SERIES SPRAGIH-GOODMAN ELECTRONICS, INC. W IDEBAND HYPERABRUPT TUNING VARACTOR DIODES FEATURES SPECIFICATIONS « Mesa Epitaxial Silicon Construction • Silicon Dioxide Passivated > Superior Wide Range Linear Characteristics

step recovery diode

Contextual Info: POWER GENERATION DIODES Step recovery diodes and multiplier varactor applications STEP RECOVERY DIODES AND MULTIPLIER VARACTOR APPLICATIONS A Step Recovery Diode SRD generates pulses that can be used to multiply frequencies, and to set up reference points, e.g. for synchronizing test instruments.

Contextual Info: DATA SHEET SMV121x Series: Hyperabrupt Junction Tuning Varactors Applications • Low tuning voltage VCOs  High-volume commercial systems Features  High capacitance ratio: C1V/C4V = 5 typical  Packages rated MSL1, 260 °C per JEDEC J-STD-020 Description

mv1404

Contextual Info: MV1404 TUNING VARACTOR DESCRIPTION: The ASI MV1404 is a Silicon Hyper-Abrupt Junction Microwave Tuning Varactor Diode. PACKAGE STYLE D0-204AA FEATURES: • High Capacitance: 90 – 144pF • High Q: 200 Min. Millimeters MAXIMUM RATINGS 12 V V I 250 mA PDISS

DH292

Contextual Info: POWER GENERATION DIODES Silicon multiplier varactor SILICON MULTIPLIER VARACTORS Description These silicon multiplier varactors from 0.2 to 25 GHz are designed for harmonic generation of high power levels (stack configuration) and/or at high multiplication orders.

VF600

Abstract: Valpey-Fisher VF700 VF750C VF670
Contextual Info: VF600 Series DISCRETE VOLTAGE CONTROLLED CRYSTAL OSCILLATORS VCXO VF700 Series DISCRETE DIGITALLY COMPENSATED CRYSTAL OSCILLATORS (DCXO) In the circuitry of a Valpey-Fisher Voltage C ontrolled Crystal O scillator a varactor diode is used in parallel with a discrete

Frequency Generator 1MHz

Abstract: step recovery diode New England Microwave NE12003
Contextual Info: 6563403 NEW ENGLAND MICROWAVE. . bh ' 66C 00087 DE | b S b 3 4 Q 3 0DD0DÛ7 I T ^ o n -iS 1 NÉW ÉNGLM1D MICROWWe CORPORATION 26 HAMPSHIRE DRIVE, HUDSON, NEW HAMPSHIRE 03051 603 883-2900 STEP RECOVERY AND MULTIPLIER DIODES NE12000 The NE12000 step recovery and multiplier diodes are epitaxial silicon varactors which achieve high

Si4114G-BM

Contextual Info: Si4114G RF S Y N T H E S I Z E R W I T H I N T E G R A T E D VCO S F O R D I R E C T C O N V E R S I O N GSM AND GPRS WIRELESS COMMUNICATIONS Features M -B G Integrated VCOs, loop filters, varactors, and resonators Minimal 2 external components required

Si4133-GT

Abstract: SI4133-D-GM Si4133-GM si4133-d-gt SI4112-D-GT SI4122DG Si4113 Si4122 Si4123 Si4133
Contextual Info: Si4133 Si4123/22/13/12 DUAL-BAND RF SYNTHESIZER WITH INTEGRATED VCOS FOR WIRELESS COMMUNICATIONS FEATURES Dual-band RF synthesizers RF1: 900 MHz to 1.8 GHz RF2: 750 MHz to 1.5 GHz IF synthesizer IF: 62.5 to 1000 MHz Integrated VCOs, loop filters, varactors, and resonators

varactor diode

Contextual Info: Hyperabrupt Varactor Diode Outline Drawing Features: • ■ ■ VHF to UHF Operation Linear Octave Tuning from 3 to 20 volts Surface Mountable SOT-23 Package Outline - Single diode SMV1200-04A - Two diodes back to back (SMV1200-04B) High Reliability ■

diode oat

Contextual Info: Hyperabrupt Varactor Diode Outline Drawing Features: • ■ ■ ■ ■ V H F and UHF Operation Low Series Resistance Surface mountable S O T-23 Package - Single diode SM V1204-60A - Two diodes back to back (S M V 1204-60B ) Linear Tuning from 0 to 6 volts. Ideal