2SB740 Search Results

761b nec

Abstract: 2SB1010 2sb1041 761a 2sa684 nec 2SB737 2SB927 2SA684 2SB686 761-B
Contextual Info: 51 - m % * Type No. 2SB 733 2SB 734 „ « Manuf. = £ SANYO M. 32 TOSHIBA m NEC ÍL HITACHI B M 2SB927 2SB739 1 2SA1705 2SB740 « ± a FUJITSU te T MATSUSHITA h m MITSUBISHI □ — A ROHM 2SB101Q 2SA684 2SB1035 2SB1041 2SB 736 m 2SA1338 2SB 736A H 2SA1338

2SD789ETZ-E

Abstract: 2SD789 2SD789DTZ-E 2SD789D 2SD789E 2SB740 2SD789CTZ-E PRSS0003DC-A
Contextual Info: 2SD789 Silicon NPN Epitaxial REJ03G0772-0300 Previous ADE-208-1140A Rev.3.00 Aug.10.2005 Application • Low frequency power amplifier • Complementary pair with 2SB740 Outline RENESAS Package code: PRSS0003DC-A (Package name: TO-92 Mod) 1. Emitter 2. Collector

2sb740

Contextual Info: 2SB740 2SB740 TO-92MOD TRANSISTOR PNP 1. EMITTER FEATURE Power dissipation PCM: 2. COLLECTOR 0.9 W (Tamb=25℃) 3. BASE Collector current ICM: -1 A Collector-base voltage -70 V V(BR)CBO: Operating and storage junction temperature range TJ, Tstg: -55℃ 123

2SB740

Abstract: TO-92MOD
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92MOD Plastic-Encapsulate Transistors 2SB740 TO-92MOD TRANSISTOR PNP 1. EMITTER FEATURE Power dissipation PCM: 2. COLLECTOR 0.9 W (Tamb=25℃) 3. BASE Collector current -1 A ICM: Collector-base voltage

2SB740

Abstract: Hitachi DSA002754
Contextual Info: 2SB740 Silicon PNP Epitaxial Application • Low frequency power amplifier • Complementary pair with 2SD789 Outline 2SB740 Absolute Maximum Ratings Ta = 25°C Item Symbol Ratings Unit Collector to base voltage VCBO –70 V Collector to emitter voltage

2SB740

Abstract: Hitachi DSA0076 2SD789
Contextual Info: 2SB740 Silicon PNP Epitaxial ADE-208-1032 Z 1st. Edition Mar. 2001 Application • Low frequency power amplifier • Complementary pair with 2SD789 Outline TO-92MOD 1. Emitter 2. Collector 3. Base 3 2 1 2SB740 Absolute Maximum Ratings (Ta = 25°C) Item Symbol

Hitachi DSA0076

Abstract: 2SB740 2SD789
Contextual Info: 2SD789 Silicon NPN Epitaxial ADE-208-1140A Z 2nd. Edition Mar. 2001 Application • Low frequency power amplifier • Complementary pair with 2SB740 Outline TO-92MOD 1. Emitter 2. Collector 3. Base 3 2 1 2SD789 Absolute Maximum Ratings (Ta = 25°C) Item

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92MOD Plastic-Encapsulate Transistors 2SB740 TO – 92M TO – 92MOD TRANSISTOR PNP 1. COLLECTOR 1. EMITTER 2. BASE FEATURES z Low Frequency Power Amplifier z Complementary Pair with 2SD789 2. COLLECTOR

2SB740

Contextual Info: HITACHI 2SB740 SILICON PNP EPITAXIAL LOW FREQ UEN CY PO W ER AMPLIFIER Complementary pair with 2SD7Û9 DO 1. Emiuer 2. Colleeior 3. Base Dimensions in mm • ABSO LU T E MAXIMUM RATINGS (Ta=25°C) Hem Symbol MAXIMUM COLLECTOR DISSIPATION 2SE3740 Unit Colleeior to base voltage

2SB740C

Abstract: 2SB740 2SB740BTZ-E 2SB740CTZ-E 2SD789 PRSS0003DC-A
Contextual Info: 2SB740 Silicon PNP Epitaxial REJ03G0651-0200 Previous ADE-208-1032 Rev.2.00 Aug.10.2005 Application • Low frequency power amplifier • Complementary pair with 2SD789 Outline RENESAS Package code: PRSS0003DC-A (Package name: TO-92 Mod) 1. Emitter 2. Collector

2sd789

Abstract: Hitachi DSA002756
Contextual Info: 2SD789 Silicon NPN Epitaxial Application • Low frequency power amplifier • Complementary pair with 2SB740 Outline 2SD789 Absolute Maximum Ratings Ta = 25°C Item Symbol Ratings Unit Collector to base voltage VCBO 100 V Collector to emitter voltage VCEO

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92MOD Plastic-Encapsulate Transistors 2SB740 ＴＯ－９２ＭＯＤ TRANSISTOR（ PNP ） 1.EMITTER FEATURE Power dissipation PCM : 0.9 W（Tamb=25℃） Collector current ICM: -1 A Collector-base voltage

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92MOD Plastic-Encapsulate Transistors 2SD789 TO – 92M TO – 92MOD TRANSISTOR NPN 1. COLLECTOR 1. EMITTER 2. BASE FEATURES z Low Frequency Power Amplifier z Complementary Pair with 2SB740 2. COLLECTOR

2SB740

Abstract: 2SD789 Hitachi DSA00396
Contextual Info: 2SB740 Silicon PNP Epitaxial Application • Low frequency power amplifier • Complementary pair with 2SD789 Outline TO-92MOD 1. Emitter 2. Collector 3. Base 3 2 1 2SB740 Absolute Maximum Ratings Ta = 25°C Item Symbol Ratings Unit Collector to base voltage

Contextual Info: HITACHI 2SB740 SILICON PNP EPITAXIAL LOW FREQ UEN C Y P O W ER AM PLIFIER Complementary pair with 2SD789 :x x rz p o L Fmatçr 2 Coíiccíof y Base Ü.>MiKnsi n* m» mm* JEDEC TO-92 MOD. I ABSOLUTE MAXIMUM RATINGS cra=25<’c> 3Ss mho! Item MAXIMUM COLLECTOR DISSIPATION

CRVT

Abstract: 2sb740
Contextual Info: 2SB740 Silicon PNP Epitaxial HITACHI Application • L o w frequency power a m p lifie r • C om plem entary pair w ith 2SD789 Outline TO-92MOD 1. Emitter 2. Collector 3. Base 215 2SB740 Absolute Maximum Ratings Ta = 25 °C Item Symbol Ratings Unit Collector to base voltage

2SB740

Abstract: 2SD789 Hitachi DSA00388
Contextual Info: 2SD789 Silicon NPN Epitaxial Application • Low frequency power amplifier • Complementary pair with 2SB740 Outline TO-92MOD 1. Emitter 2. Collector 3. Base 3 2 1 2SD789 Absolute Maximum Ratings Ta = 25°C Item Symbol Ratings Unit Collector to base voltage

2SB1059

Abstract: 2SB740 2SD1490
Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

2SB816

Abstract: 2SB1212 2SB921 2SB873 2SA1120 2SB1085B 2sb 989 2SB941 2SC4341 2SB1416
Contextual Info: 59 - fi 2SB 980 2SB 2SB 2SB 2SB 2S8 2SB 981 982 983 , 984 _ • 985 986 , 2S8 987 2SB 988 « Manuf. T K T tfi T fö T S tB t u q n 989 991 992 993 994 995 996 2SB 2SB 2SB 2SB 2SB 997 ^ 998 999 1000 1000A H 3 SANYO 9ÇR77C; 2SB775 2SB816 2SB825 2SB816 * 2SA17Q3

2SD737

Abstract: 2SD744 2sb737 equivalent 2SD712 2SD736A 2SD778 2SD717 2SB699 2sd730 2SB737
Contextual Info: Absolutes maximum ratings Ta=25ºC PartNumber VCBO VEBO Ic (V) (V) Pc (mA) (mW) Electrical characteristics (Ta=25ºC) DC Current Gain fab/ft* Cob hFE VCE Ic (ºC) (MHz) (pF) (V) (mA) Tj ºñ°í 2SD701 2SD702 400 5 40A 2SD703 200 5 30A 2SD704 50 7 5A 2SD705

2SA1264N

Abstract: 2sa143z 2SA1705 2SA1283 1818 2SA1613 2SB1421 2SA1821 2SA949 2SB1207
Contextual Info: - m Type « tt No. « Manuf. 2 S A 1 78 5 = >¥ 2 S A 1 78 8 □— A 2 S A 1 78 9 □ — A H if SANYO 2 S A 1 78 7 ^ 2 S A 1 79 0 M £ S 1 TOSHIBA NEC 2SA1432 2SA1264N 2SB966 9SA1R3? 2SA1836 B aL H I TACH! 2SB1508 * ± a FUJITSU T MATSUSHITA 2SB1546 2SB1207

SS2205

Abstract: 2SA1628 2SB814 HSI 527 2SA1284 2SA1178 2SA1283 2SA1586 2SB1043 2SA934
Contextual Info: 33 tt « Manuf. ft 3 SANYO M TOSHIBA m « T y p e No. o a ED - ±L HITACHI S ± FUJITSU 35 ta T DTA123YS 1505 n m w * 2SA 1506 m w m ,^ 2SA 1 507 , 2SA 1508 2SA 1509 2SA 1510 ' 2SA 1511 /• = ft 2SA 1512 & T 2SA 1 5 1 3 -■ a 2SA 1514 □ - A 2SA1257 2S A 1 1 6 3

2SB737

Abstract: 2SD786 EL 14v 4c 2SD758B 2SB733 2SD756 2SD758 2SD772 2SD786S 2sd797
Contextual Info: - 224 - Ta=25'C, *EP(iTc=25‘ C m £ tt & m ä VCBO Vc e o (V) (V) n lc(DC) Pc Pc* Ic b o (A) <W) (W) (Uh) Vro (V) n & 14 hF E (min) (roax) (Ta=25‘ C) Ir/Ir (Aj“ Vp f (V) [*E P (ity p fif] (max) '(V )' Ic CA) Ib (A) 2SD743 H i LF PA/LS PSW 100 80 4