TN2905A
Abstract: PN2907A
Contextual Info: TN2905A Discrete P O W E R & S ig n a l Technologies National Semiconductor"' TN2905A PNP General Purpose Amplifier T h is d e v ic e is d e s ig n e d fo r u s e a s a g e n e ra l purp o se am p lifie r a n d sw itch requiring colle cto r c u rren ts to 5 0 0 m A , S o u rc e d from
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tn2905apn2907al5d1130004dbes |
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NDT452P
Contextual Info: National Semiconductor" June 1996 NDT452P P-Channel Enhancement Mode Fi Effect Transistor Features General Description These P-Channel enhancem ent m od e p o w e r field effect transistors are produced using N ational's proprietary, h ig h cell density, DMOS tech no lo g y.
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ndt452p125-cb501130 |
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TF411
Abstract: national PN2222A IC VS 1307 I-00 MMBT2222A MMPQ2222 NMT2222 PN2222A PZT2222A TR46
Contextual Info: PN2222AI MMBT2222A I MMPQ2222 I NMT2222 I PZT2222A Discrete POW ER & Signa l Technologies National S e m i c o n d u c t o r ” MMBT2222A PN2222A SOT-23 PZT2222A B SOT-223 Mark: 1P NMT2222 MMPQ2222 NPN General Purpose Amplifier This device is fo r use as a medium power amplifier and
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pn2222ammbt2222apzt2222aot-23+11ot-223mmpq2222nmt2222s0113dbsd113d004dbl7tf411national pn2222aic vs 1307i-00tr46
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diode RN 1220
Abstract: NDT455N diode 561
Contextual Info: J L J National Semiconductor” July 1 9 9 6 NDT455N N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel lo g ic level enhancem ent m ode p ow er fie ld effect tran sisto rs are produced using N ational's p ro p rie ta ry, hig h cell density, DMOS
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ndt455not-223lsd113d00401e+2diode rn 1220diode 561
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BD371C-10
Abstract: BD371D BF494 BF936 yc 236 b055 BC338-25 NATIONAL SEMICONDUCTOR BD371B BD371C BD371C-6
Contextual Info: NATL S E M IC O N D H E D IS C R E T E D • tS0 1 1 3 D 0Q371SB fi 1 S -a CM T" O z CM eg Y~ o CM r* ST -f u T-03-01 « e 3 m o o s i o « 0 *c a) /) c o z Sï (/) « fl «?&2 <D » <D o f X a Jr i o Û) 8 S to CO LU o CL k. w o Q. m S's U o o o o o o o o
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b50113dl5d1130t-03-01bd371c-10+9bd371dbf494bf936yc 236b055bc338-25 national semiconductorbd371bbd371cbd371c-6
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N7000
Abstract: 2N7000 MOSFET CJ NDF7000A sfs sot23 Mosfet 2n7000 2N7000 2N7002 NDF7000A NDS7002A 7002 transistor sm
Contextual Info: March 1993 Semiconductor 2N7000/2N7002/NDF7000A/NDS7002A N-Channel Enhancement Mode Field Effect Transistor General Description Features These n-channel enhancement mode field effect transistors are produced using National's very high cell density third generation DMOS technology. These products have been
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2n7000/2n7002/ndf7000a/nds7002a81-043-299-240bbsd1130n7000+92n7000 mosfetcj ndf7000asfs sot23mosfet 2n70002n70002n7002ndf7000ands7002a7002 transistor sm
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sot23 t04
Abstract: mark t04 sot 2n5401 sot 23
Contextual Info: 2N5401 I MMBT5401 D iscrete POW ER & S ig n a l Technologies tß National Semiconductor" 2N5401 MMBT5401 SOT-23 B Mark: 2L PNP General Purpose Amplifier This device is designed as a general purpose amplifier and switch for applications requiring high voltages. Sourced from Process 74.
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2n5401mmbt5401ot-23bs01130+500407cnlsd113dsot23 t04mark t04 sot2n5401 sot 23
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56 pF CH
Abstract: NDS8858H cft 455 f
Contextual Info: J u ly 1 9 9 6 N a t io n a l S e m ic o n d u c to r” NDS8858H Complementary MOSFET Half Bridge General Description Features These C o m plem e n ta ry MOSFET half b ridge devices are produced using N ational's proprietary, hig h cell density, DMOS tech no lo g y. T his very
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nds8858hlsd11356 pf chcft 455 f |
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NDS9410 equivalent
Abstract: NDS9410
Contextual Info: National ÆlÆ Semiconductor November 1993 NDS9410 Single N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, D M O S technology. This
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nds9410lsd1130bsd113dnds9410 equivalent |
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j310
Abstract: J310 equivalent z60b J309 4dcm J309-J310 J309 application note MMBFJ309 MMBFJ310
Contextual Info: r D is c r e te P O W E R & S i g n a l ^ . T e c h n o lo g ie s , , S e m i c o n d u c t o r “ & J309 J310 MMBFJ309 MMBFJ310 N-Channel RF Amplifier This device is designed for VHF/UHF amplifier, oscillator and mixer applications. As a common gate amplifier, 16 dB at 100 MHz and
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mmbfj309mmbfj310040cis2j310+6j310 equivalentz60bj3094dcmj309-j310j309 application note
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