diode 8109
Abstract: DDH0312 NDB7061L NDP7061L W9 diode
Contextual Info: MCE N a t i o n a l Semiconductor • J u n e 1996 " NDP7061L/ NDB7061L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These logic level N-Channel enhancement mode power field effect transistors are produced using
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ndp7061l/ndb7061lbsd113d004031b+5bs01130diode 8109ddh0312ndp7061lw9 diode
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TN2905A
Abstract: PN2907A
Contextual Info: TN2905A Discrete P O W E R & S ig n a l Technologies National Semiconductor"' TN2905A PNP General Purpose Amplifier T h is d e v ic e is d e s ig n e d fo r u s e a s a g e n e ra l purp o se am p lifie r a n d sw itch requiring colle cto r c u rren ts to 5 0 0 m A , S o u rc e d from
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tn2905apn2907al5d1130004dbes |
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SOT 23 1ft
Abstract: 2N5484 2NS484 MMBF5484 1Ft SOT23 transconductance 2N5485 2N5485 2N5486 MMBF5485 MMBF5486
Contextual Info: Semiconductor 2N5484 2N5485 2N5486 MMBF5484 MMBF5485 MMBF5486 •# SOT-23 S N-Channel RF Amplifier This device is designed primarily for electronic switching applications such a s low On Resistance analog switching. Sourced from P rocess 50. Absolute Maximum Ratings*
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n54842n54852n5486mmbf5484+8mmbf5485mmbf5486ot-23sot 23 1ft2n54842ns4841ft sot23transconductance 2n5485
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1n9148
Abstract: IR diode D4-D4 1N3064 1N4148 1N4149 1N4150 1N914 1N914A 1N914B 1N916
Contextual Info: Switching Diodes Computer Diodes Glass Package V R RM Device No. Package No. (V) R (nA) C V @ R <V> Max @ Ja) <PF> (ns) Max Max Test Cond. Process No. Min . Max (V> 1N914 DO-35 100 25 5000 20 75 1 10 4 4 (Note 2) D3 1N914A DO-35 100 25 5000 20 75 1 20 4
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1n914do-351n914a1n914b+81n9161n916a1n9148ir diode d4-d41n30641n41481n41491n4150
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027Q
Abstract: NDS336P
Contextual Info: M ay 1996 National & Semiconductor PRELIMINARY NDS336P P-Channel Logic Level Enhancement Mode Field Effect Transistor Features General Description These P-Channel lo g ic level enhancem ent m ode pow er fie ld effect tran sisto rs are produced using N ationals proprietary, high cell density, DMOS
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nds336p--125-clsd1130027q |
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NDT452P
Contextual Info: National Semiconductor" June 1996 NDT452P P-Channel Enhancement Mode Fi Effect Transistor Features General Description These P-Channel enhancem ent m od e p o w e r field effect transistors are produced using N ational's proprietary, h ig h cell density, DMOS tech no lo g y.
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ndt452p125-cb501130 |
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TF411
Abstract: national PN2222A IC VS 1307 I-00 MMBT2222A MMPQ2222 NMT2222 PN2222A PZT2222A TR46
Contextual Info: PN2222AI MMBT2222A I MMPQ2222 I NMT2222 I PZT2222A Discrete POW ER & Signa l Technologies National S e m i c o n d u c t o r ” MMBT2222A PN2222A SOT-23 PZT2222A B SOT-223 Mark: 1P NMT2222 MMPQ2222 NPN General Purpose Amplifier This device is fo r use as a medium power amplifier and
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pn2222ammbt2222apzt2222aot-23+11ot-223mmpq2222nmt2222s0113dbsd113d004dbl7tf411national pn2222aic vs 1307i-00tr46
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ksd113
Abstract: NSDU57 NSD6181 2N4355 2N4354 2N6726 2N6727 MPSA92 151a100 MPSW92
Contextual Info: PNP Transistors V cbo V Min v CEO (V) Min Vebo (V) Min 2N4030 TO-39 60 60 5 2N4031 TO-39 80 60 80 60 5 5 50 50 50 50 60 50 TO-39 80 80 5 50 60 also Avail. JA N /T X /V Versions 2N4036 TO-39 90 85 TO-39 60 40 2N4314 TO-39 90 65 7 20 60 10 25 40 30 40 70 100
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bs01130d0b70fllnsd206o-202+11nsdu56nsdu57ksd113nsd61812n43552n43542n67262n6727mpsa92151a100mpsw92
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IC 74122
Abstract: cx - 032 LS 74122 74122PC 4165F
Contextual Info: NATIONAL SÈ H ICÔN» {LOGIC} 0 2 E D | bSDllEE DObB?^? fi | T 'S /'/r 1 2 2 CONNECTION DIAGRAM PINOUT A 54/74122 R E T R IG G ERABLE RESETTABLE MULTIVIBRATOR DESCRIPTION — The '122 features positive and negative dc level triggering inputs, complementary outputs, an optional 10 kft internal timing resistor
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ic 74122cx - 032ls 7412274122pc+14165f
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diode RN 1220
Abstract: NDT455N diode 561
Contextual Info: J L J National Semiconductor” July 1 9 9 6 NDT455N N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel lo g ic level enhancem ent m ode p ow er fie ld effect tran sisto rs are produced using N ational's p ro p rie ta ry, hig h cell density, DMOS
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ndt455not-223lsd113d00401e+2diode rn 1220diode 561
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NDP506BL
Abstract: Zener diode DW NDP506A NDB506AL NDB506BL NDP506AL
Contextual Info: National Semiconductor" May 1995 NDP506AL / NDP506BL NDB506AL / NDB506BL N-Channel Logic Level Enhancement I ide Field Effect Transistor General Description Features These logic level N-Channel enhancement mode power field effect transistors are produced using
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ndp506alndp506blndb506alndb506bl+5s011300gm0215bsd1130zener diode dwndp506a
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BD371C-10
Abstract: BD371D BF494 BF936 yc 236 b055 BC338-25 NATIONAL SEMICONDUCTOR BD371B BD371C BD371C-6
Contextual Info: NATL S E M IC O N D H E D IS C R E T E D • tS0 1 1 3 D 0Q371SB fi 1 S -a CM T" O z CM eg Y~ o CM r* ST -f u T-03-01 « e 3 m o o s i o « 0 *c a) /) c o z Sï (/) « fl «?&2 <D » <D o f X a Jr i o Û) 8 S to CO LU o CL k. w o Q. m S's U o o o o o o o o
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b50113dl5d1130t-03-01bd371c-10+9bd371dbf494bf936yc 236b055bc338-25 national semiconductorbd371bbd371cbd371c-6
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N7000
Abstract: 2N7000 MOSFET CJ NDF7000A sfs sot23 Mosfet 2n7000 2N7000 2N7002 NDF7000A NDS7002A 7002 transistor sm
Contextual Info: March 1993 Semiconductor 2N7000/2N7002/NDF7000A/NDS7002A N-Channel Enhancement Mode Field Effect Transistor General Description Features These n-channel enhancement mode field effect transistors are produced using National's very high cell density third generation DMOS technology. These products have been
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2n7000/2n7002/ndf7000a/nds7002a81-043-299-240bbsd1130n7000+92n7000 mosfetcj ndf7000asfs sot23mosfet 2n70002n70002n7002ndf7000ands7002a7002 transistor sm
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TN3440A
Contextual Info: S e m i c o n d u c t o r TN3440A & D iscrete P O W ER & S ig n a l T echnologies . National T N 3440A NPN General Purpose Amplifier T h is d e v ic e is d e s ig n e d for u se in h o rizo n tal driver, c la s s A off-line a m p lifier an d off-line sw itching a pp licatio ns. S o u rc e d from P ro c e s s 36.
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tn3440alsd11300q40bmo-226+2l50113dd01dl42
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d4sh8
Abstract: D45H8 NZT45H8 k200g
Contextual Info: D45H8 I NZT45H8 ' N a t i on a I Discrete POWER & Signal Technologies S e m i c o n d u c t o r " D45H8 NZT45H8 SOT-223 TO-220 B PNP Power Amplifier This device is designed for power amplifier, regulator and switching circuits where speed is important. Sourced from Process 5Q.
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d45h8nzt45h8o-220ot-223+3lsd1130d4sh8k200g
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56 pF CH
Abstract: NDS8858H cft 455 f
Contextual Info: J u ly 1 9 9 6 N a t io n a l S e m ic o n d u c to r” NDS8858H Complementary MOSFET Half Bridge General Description Features These C o m plem e n ta ry MOSFET half b ridge devices are produced using N ational's proprietary, hig h cell density, DMOS tech no lo g y. T his very
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nds8858hlsd11356 pf chcft 455 f |
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FJT1
Abstract: FJT1100 1N456A FJT1102
Contextual Info: Device No. Package No. Glass Package VRRM c VF (V) (nA) Min Max @ VR (V) (V) Min @ Max •f (mA) <pF) Max Process No. 1N456 DO-35 30 25 25 1 40 1N456A DO-35 30 25 25 1 100 1N457 DO-35 70 25 60 1 20 1N457A DO-35 70 25 60 1 100 1N458 DO-35 150 25 125 1 7 1N458A
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1n4561n456a1n4571n457a+91n4581n458a1n4591n459afdh300do-35fjt1fjt1100fjt1102
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NDT456P
Abstract: 0011914
Contextual Info: J u ly 1 9 9 6 N ational S e m i c o n d u c t or " NDT456P P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.
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ndt456pot-223bs01130004d13h+10011914
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diode T35
Abstract: NDS355N diode T35 -4-D6
Contextual Info: & National Semiconductor M a rc h 1 9 9 6 " NDS355N N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel lo g ic level enhancem ent m ode p o w e r fie ld effect tran sisto rs are produced using N ationals pro p rie ta ry, high cell density, DMOS
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nds355not-23b501130bsg1130+2diode t35diode t35 -4-d6
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NZT751
Contextual Info: NZT751 Diserete POWER & Signal Technologies u c t o r " NZT751 E B SOT-223 PNP Current Driver Transistor This device is designed for power amplifier, regulator and switching circuits where speed is important. Sourced from Process 5P. Absolute Maximum Ratings*
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nzt751ot-223b5011i3g |
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NDS9410 equivalent
Abstract: NDS9410
Contextual Info: National ÆlÆ Semiconductor November 1993 NDS9410 Single N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, D M O S technology. This
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nds9410lsd1130bsd113dnds9410 equivalent |
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BSS123
Abstract: BSS100 85S100 TRANSISTOR BSS123 K5011
Contextual Info: tu N ational Semiconductor" J u ly 1996 BSS100 / BSS123 N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel logic level enhancement mode power field effect transistors are produced using Nationals proprietary, high cell density, DMOS
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bss100bss123k501130bs0113d+385s100transistor bss123k5011
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j310
Abstract: J310 equivalent z60b J309 4dcm J309-J310 J309 application note MMBFJ309 MMBFJ310
Contextual Info: r D is c r e te P O W E R & S i g n a l ^ . T e c h n o lo g ie s , , S e m i c o n d u c t o r “ & J309 J310 MMBFJ309 MMBFJ310 N-Channel RF Amplifier This device is designed for VHF/UHF amplifier, oscillator and mixer applications. As a common gate amplifier, 16 dB at 100 MHz and
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mmbfj309mmbfj310040cis2j310+6j310 equivalentz60bj3094dcmj309-j310j309 application note
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LD 1106 BS
Abstract: NDS8426
Contextual Info: National Semiconductor July 1996 ” NDS8426 Single N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel e nhancem ent m od e p o w e r field effect tran sisto rs are produced using N ational's p ro p rie ta ry, h ig h cell density, DMOS tech no lo g y.
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nds8426rds10nbsg1130ld 1106 bs |
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