MMBFJ309 Search Results

Y22 SOT23

Abstract: MMBFJ309LT1, Application Notes JFET with Yos MMBFJ309 MMBFJ309LT1 MMBFJ309LT1G MMBFJ310 MMBFJ310LT1 MMBFJ310LT1G
Contextual Info: MMBFJ309LT1, MMBFJ310LT1 JFET − VHF/UHF Amplifier Transistor N−Channel http://onsemi.com Features 2 SOURCE • Pb−Free Packages are Available 3 GATE MAXIMUM RATINGS Rating Symbol Value Unit Drain−Source Voltage VDS 25 Vdc Gate−Source Voltage VGS

Transistor J310

Abstract: J309 J310 J310 applications CBVK741B019 F63TNR MMBFJ309 MMBFJ310 PN2222N J310 Application Note
Contextual Info: MMBFJ309 MMBFJ310 J309 J310 G D G S TO-92 SOT-23 D S Mark: 6U / 6T N-Channel RF Amplifier This device is designed for VHF/UHF amplifier, oscillator and mixer applications. As a common gate amplifier, 16 dB at 100 MHz and 12 dB at 450 MHz can be realized. Sourced from Process 92.

Contextual Info: MMBFJ309L, MMBFJ310L, SMMBFJ310L JFET - VHF/UHF Amplifier Transistor N−Channel http://onsemi.com Features 2 SOURCE • Drain and Source are Interchangeable • S Prefix for Automotive and Other Applications Requiring Unique • 3 GATE Site and Control Change Requirements; AEC−Q101 Qualified and

ua309

Abstract: J310 equivalent J310 J310G J309-J310 J309 MMBFJ309 MMBFJ310 fr 309 625 GFG
Contextual Info: J309 / J310 / MMBFJ309 / MMBFJ310 MMBFJ309 MMBFJ310 J309 J310 G S G S TO-92 SOT-23 D D Mark: 6U / 6T NOTE: Source & Drain are interchangeable N-Channel RF Amplifier This device is designed for VHF/UHF amplifier, oscillator and mixer applications. As a common gate amplifier, 16 dB at 100 MHz and

mmbfj310

Abstract: MMBFJ309
Contextual Info: ON Semiconductort JFET - VHF/UHF Amplifier Transistor MMBFJ309LT1 MMBFJ310LT1 N–Channel 3 MAXIMUM RATINGS 1 Rating Symbol Value Unit Drain–Source Voltage VDS 25 Vdc Gate–Source Voltage VGS 25 Vdc IG 10 mAdc Symbol Max Unit PD 225 mW 1.8 mW/°C RqJA 556

CL-21 capacitor

Abstract: BFJ309LT1 4505 IC equivalent BFJ310LT1 vk200 choke Cl-21 225
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA J F E T VHF/UHF Am plifier Transistor MMBFJ309LT1 MMBFJ310LT1 N -C h a n n e l 2 SOURCE MAXIMUM RATINGS Rating D rain-Source Voltage G ate-S ource Voltage Gate Current Symbol Value Unit V DS 25 Vdc VG S 25 Vdc !g 10 mAdc

MMBFJ310LT1G

Abstract: MMBFJ310LT1 MMBFJ309LT1G ON SEMICONDUCTOR MMBFJ309LT1G MMBFJ309 MMBFJ309LT1 MMBFJ310
Contextual Info: MMBFJ309LT1G, MMBFJ310LT1G JFET - VHF/UHF Amplifier Transistor N−Channel http://onsemi.com Features 2 SOURCE • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant 3 GATE MAXIMUM RATINGS Rating Symbol Value Unit Drain−Source Voltage

motorola U310

Abstract: shock vk200 VK200 rfc MVM010 transistor u310 motorola 539 U310 MVM010W motorola 2443 vk200 rfc with 6 turns
Contextual Info: MOTOROLA Order this document by MMBFJ309LT1/D SEMICONDUCTOR TECHNICAL DATA JFET VHF/UHF Amplifier Transistor N–Channel MMBFJ309LT1 MMBFJ310LT1 2 SOURCE 3 GATE 1 DRAIN 3 1 MAXIMUM RATINGS Rating Symbol Value Unit Drain–Source Voltage VDS 25 Vdc Gate–Source Voltage

rde 090

Abstract: BFJ309LT1
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET VHF/UHF A m plifier Transistor N-Channel MMBFJ309LT1 MMBFJ310LT1 2 SOURCE GATE 1 DR AIN MAXIMUM RATINGS Symbol Value Unit Drain-Source Voltage V DS 25 Vdc Gate-Source Voltage VGS 25 Vdc ta 10 mAdc Symbol Max Unit

MMBF310

Abstract: MMBF309 mmbfj310
Contextual Info: MMBFJ309 / MMBFJ310 PRELIMINARY J-FET HIGH FREQUENCY AMPLIFIER TRANSISTOR 1 D N-CHANNEL 3 For VHF/UHF Applications G S 2 1 2 3 DEVICE MARKING MMBF309 = B9J; MMBF310 = B1J SOT-23 Note: Drain and Source are interchangeable. ELECTRICAL RATINGS Rating Symbol Value

Contextual Info: J309 / J310 / MMBFJ309 / MMBFJ310 N-Channel RF Amplifier Features • • • • This device is designed for VHF/UHF amplifier, oscillator and mixer applications. As a common gate amplifier, 16 dB at 100 MHz and 12 dB at 450 MHz can be realized. Sourced from Process 92.

transistor y21 sot-23

Abstract: MMBFJ310LT1G SMMBFJ310LT1G Y22 SOT23 S12 sot 23-6
Contextual Info: MMBFJ309L, MMBFJ310L, SMMBFJ310L JFET - VHF/UHF Amplifier Transistor N−Channel http://onsemi.com Features 2 SOURCE • AEC−Q101 Qualified and PPAP Capable • S Prefix for Automotive and Other Applications Requiring Unique • 3 GATE Site and Control Change Requirements

J310

Abstract: j310 equivalent J310 applications J309 MMBFJ310 rf fairchild transistor 100mhz amplifier MMBFJ309 J310G N-CHANNEL dual gate ultra low noise vhf LOW NOISE AMPLIFIER J-310
Contextual Info: J309 / J310 / MMBFJ309 / MMBFJ310 N-Channel RF Amplifier Features • • • • This device is designed for VHF/UHF amplifier, oscillator and mixer applications. As a common gate amplifier, 16 dB at 100 MHz and 12 dB at 450 MHz can be realized. Sourced from Process 92.

Contextual Info: MMBFJ309L, MMBFJ310L, MMBFJ309L, SMMBFJ310L JFET - VHF/UHF Amplifier Transistor N−Channel http://onsemi.com Features 2 SOURCE • Drain and Source are Interchangeable • S Prefix for Automotive and Other Applications Requiring Unique • 3 GATE Site and Control Change Requirements; AEC−Q101 Qualified and

MMBFJ310

Abstract: n-channel JFET sot23 MMBFJ309
Contextual Info: MMBFJ309 / MMBFJ310 J-FET HIGH FREQUENCY AMPLIFIER TRANSISTOR 1 D N-CHANNEL 3 For VHF/UHF Applications G S 2 1 2 3 DEVICE MARKING MMBFJ309 = B9J; MMBFJ310 = B1J SOT-23 Note: Drain and Source are interchangeable. ELECTRICAL RATINGS Rating Symbol Value Units

Contextual Info: MMBFJ309L, MMBFJ310L, SMMBFJ310L JFET - VHF/UHF Amplifier Transistor N−Channel http://onsemi.com Features 2 SOURCE • AEC−Q101 Qualified and PPAP Capable • S Prefix for Automotive and Other Applications Requiring Unique • 3 GATE Site and Control Change Requirements

motorola JFET 2N3819

Abstract: C4 SOT-323 equivalent transistor 2N1711 mvm010 marking code C5 sot23 BC237 JFET 2N3819 MOTOROLA
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET VHF/UHF Amplifier Transistor N–Channel MMBFJ309LT1 MMBFJ310LT1 2 SOURCE 3 GATE 1 DRAIN 3 1 MAXIMUM RATINGS Rating Symbol Value Unit Drain–Source Voltage VDS 25 Vdc Gate–Source Voltage VGS 25 Vdc IG 10 mAdc Gate Current

MBFJ310

Contextual Info: MMBFJ309LT1* MMBFJ310LT1* M A X IM U M R A T IN G S Rating CASE 318-07, STYLE 10 SOT-23 TO-236AB S ym bol Value U n it D rain-Source Voltage V DS 25 Vdc Gate-Source Voltage VGS 25 Vdc 'G 10 m Adc Sym bol M ax U n it PD 225 mW 1.8 m W °C R«j a 556 3C W

6u sot-23

Abstract: s22 sot-23 MMBFJ309 MMBFJ309LT1 MMBFJ310 MMBFJ310LT1 transistor y21 sot-23
Contextual Info: ON Semiconductort JFET - VHF/UHF Amplifier Transistor MMBFJ309LT1 MMBFJ310LT1 N–Channel 3 MAXIMUM RATINGS 1 Rating Symbol Value Unit Drain–Source Voltage VDS 25 Vdc Gate–Source Voltage VGS 25 Vdc IG 10 mAdc Symbol Max Unit PD 225 mW 1.8 mW/°C RqJA 556

j310

Abstract: J310 equivalent J309 J310 applications fr 309 J310 -TO92
Contextual Info: J309 / J310 / MMBFJ309 / MMBFJ310 MMBFJ309 MMBFJ310 J309 J310 G G S S TO-92 SOT-23 D D Mark: 6U / 6T NOTE: Source & Drain are interchangeable N-Channel RF Amplifier This device is designed for VHF/UHF amplifier, oscillator and mixer applications. As a common gate amplifier, 16 dB at 100 MHz and

6u sot-23

Abstract: j310 equivalent 1175 yig oscillator J309 application note rf transistor mark code H1 CBVK741B019 F63TNR J309 J310 MMBFJ309
Contextual Info: J309 / J310 / MMBFJ309 / MMBFJ310 MMBFJ309 MMBFJ310 J309 J310 G S G S TO-92 SOT-23 D D Mark: 6U / 6T NOTE: Source & Drain are interchangeable N-Channel RF Amplifier This device is designed for VHF/UHF amplifier, oscillator and mixer applications. As a common gate amplifier, 16 dB at 100 MHz and

j310

Abstract: J310 equivalent z60b J309 4dcm J309-J310 J309 application note MMBFJ309 MMBFJ310
Contextual Info: r D is c r e te P O W E R & S i g n a l ^ . T e c h n o lo g ie s , , S e m i c o n d u c t o r “ & J309 J310 MMBFJ309 MMBFJ310 N-Channel RF Amplifier This device is designed for VHF/UHF amplifier, oscillator and mixer applications. As a common gate amplifier, 16 dB at 100 MHz and

6u sot-23

Abstract: JFET with Yos s22 sot-23
Contextual Info: ON Semiconductort JFET - VHF/UHF Amplifier Transistor MMBFJ309LT1 MMBFJ310LT1 N−Channel 3 MAXIMUM RATINGS 1 Rating Symbol Value Unit Drain−Source Voltage VDS 25 Vdc Gate−Source Voltage VGS 25 Vdc IG 10 mAdc Gate Current 2 CASE 318 −08, STYLE 10 SOT−23 TO −236AB

Contextual Info: MMBFJ309 Transistors N-Channel JFET Military/High-RelN V BR DSS (V) V(BR)GSS (V)25 I(D) Max. (A) I(G) Max. (A) Absolute Max. Power Diss. (W)350m Maximum Operating Temp (øC)150 I(GSS) Max. (A)1.0n @V(GS) (V) (Test Condition) V(GS)off Min. (V) I(DSS) Max. (A)