MMBFJ309L Search Results

Y22 SOT23

Abstract: MMBFJ309LT1, Application Notes JFET with Yos MMBFJ309 MMBFJ309LT1 MMBFJ309LT1G MMBFJ310 MMBFJ310LT1 MMBFJ310LT1G
Contextual Info: MMBFJ309LT1, MMBFJ310LT1 JFET − VHF/UHF Amplifier Transistor N−Channel http://onsemi.com Features 2 SOURCE • Pb−Free Packages are Available 3 GATE MAXIMUM RATINGS Rating Symbol Value Unit Drain−Source Voltage VDS 25 Vdc Gate−Source Voltage VGS

Contextual Info: MMBFJ309L, MMBFJ310L, SMMBFJ310L JFET - VHF/UHF Amplifier Transistor N−Channel http://onsemi.com Features 2 SOURCE • Drain and Source are Interchangeable • S Prefix for Automotive and Other Applications Requiring Unique • 3 GATE Site and Control Change Requirements; AEC−Q101 Qualified and

mmbfj310

Abstract: MMBFJ309
Contextual Info: ON Semiconductort JFET - VHF/UHF Amplifier Transistor MMBFJ309LT1 MMBFJ310LT1 N–Channel 3 MAXIMUM RATINGS 1 Rating Symbol Value Unit Drain–Source Voltage VDS 25 Vdc Gate–Source Voltage VGS 25 Vdc IG 10 mAdc Symbol Max Unit PD 225 mW 1.8 mW/°C RqJA 556

CL-21 capacitor

Abstract: BFJ309LT1 4505 IC equivalent BFJ310LT1 vk200 choke Cl-21 225
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA J F E T VHF/UHF Am plifier Transistor MMBFJ309LT1 MMBFJ310LT1 N -C h a n n e l 2 SOURCE MAXIMUM RATINGS Rating D rain-Source Voltage G ate-S ource Voltage Gate Current Symbol Value Unit V DS 25 Vdc VG S 25 Vdc !g 10 mAdc

MMBFJ310LT1G

Abstract: MMBFJ310LT1 MMBFJ309LT1G ON SEMICONDUCTOR MMBFJ309LT1G MMBFJ309 MMBFJ309LT1 MMBFJ310
Contextual Info: MMBFJ309LT1G, MMBFJ310LT1G JFET - VHF/UHF Amplifier Transistor N−Channel http://onsemi.com Features 2 SOURCE • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant 3 GATE MAXIMUM RATINGS Rating Symbol Value Unit Drain−Source Voltage

motorola U310

Abstract: shock vk200 VK200 rfc MVM010 transistor u310 motorola 539 U310 MVM010W motorola 2443 vk200 rfc with 6 turns
Contextual Info: MOTOROLA Order this document by MMBFJ309LT1/D SEMICONDUCTOR TECHNICAL DATA JFET VHF/UHF Amplifier Transistor N–Channel MMBFJ309LT1 MMBFJ310LT1 2 SOURCE 3 GATE 1 DRAIN 3 1 MAXIMUM RATINGS Rating Symbol Value Unit Drain–Source Voltage VDS 25 Vdc Gate–Source Voltage

rde 090

Abstract: BFJ309LT1
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET VHF/UHF A m plifier Transistor N-Channel MMBFJ309LT1 MMBFJ310LT1 2 SOURCE GATE 1 DR AIN MAXIMUM RATINGS Symbol Value Unit Drain-Source Voltage V DS 25 Vdc Gate-Source Voltage VGS 25 Vdc ta 10 mAdc Symbol Max Unit

transistor y21 sot-23

Abstract: MMBFJ310LT1G SMMBFJ310LT1G Y22 SOT23 S12 sot 23-6
Contextual Info: MMBFJ309L, MMBFJ310L, SMMBFJ310L JFET - VHF/UHF Amplifier Transistor N−Channel http://onsemi.com Features 2 SOURCE • AEC−Q101 Qualified and PPAP Capable • S Prefix for Automotive and Other Applications Requiring Unique • 3 GATE Site and Control Change Requirements

Contextual Info: MMBFJ309L, MMBFJ310L, MMBFJ309L, SMMBFJ310L JFET - VHF/UHF Amplifier Transistor N−Channel http://onsemi.com Features 2 SOURCE • Drain and Source are Interchangeable • S Prefix for Automotive and Other Applications Requiring Unique • 3 GATE Site and Control Change Requirements; AEC−Q101 Qualified and

VK200 rfc

Abstract: MMBFJ309 MMBFJ309LT1 MMBFJ310 MMBFJ310LT1 MVM010W U310 shock vk200 SOT23 TRANSISTOR MARKING c3 JFET with Yos
Contextual Info: ON Semiconductort JFET VHF/UHF Amplifier Transistor MMBFJ309LT1 MMBFJ310LT1 N–Channel MAXIMUM RATINGS Rating Symbol Value Unit Drain–Source Voltage VDS 25 Vdc Gate–Source Voltage VGS 25 Vdc IG 10 mAdc Symbol Max Unit PD 225 mW 1.8 mW/°C RqJA 556 °C/W

Contextual Info: MMBFJ309L, MMBFJ310L, SMMBFJ310L JFET - VHF/UHF Amplifier Transistor N−Channel http://onsemi.com Features 2 SOURCE • AEC−Q101 Qualified and PPAP Capable • S Prefix for Automotive and Other Applications Requiring Unique • 3 GATE Site and Control Change Requirements

motorola JFET 2N3819

Abstract: C4 SOT-323 equivalent transistor 2N1711 mvm010 marking code C5 sot23 BC237 JFET 2N3819 MOTOROLA
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET VHF/UHF Amplifier Transistor N–Channel MMBFJ309LT1 MMBFJ310LT1 2 SOURCE 3 GATE 1 DRAIN 3 1 MAXIMUM RATINGS Rating Symbol Value Unit Drain–Source Voltage VDS 25 Vdc Gate–Source Voltage VGS 25 Vdc IG 10 mAdc Gate Current

MBFJ310

Contextual Info: MMBFJ309LT1* MMBFJ310LT1* M A X IM U M R A T IN G S Rating CASE 318-07, STYLE 10 SOT-23 TO-236AB S ym bol Value U n it D rain-Source Voltage V DS 25 Vdc Gate-Source Voltage VGS 25 Vdc 'G 10 m Adc Sym bol M ax U n it PD 225 mW 1.8 m W °C R«j a 556 3C W

6u sot-23

Abstract: s22 sot-23 MMBFJ309 MMBFJ309LT1 MMBFJ310 MMBFJ310LT1 transistor y21 sot-23
Contextual Info: ON Semiconductort JFET - VHF/UHF Amplifier Transistor MMBFJ309LT1 MMBFJ310LT1 N–Channel 3 MAXIMUM RATINGS 1 Rating Symbol Value Unit Drain–Source Voltage VDS 25 Vdc Gate–Source Voltage VGS 25 Vdc IG 10 mAdc Symbol Max Unit PD 225 mW 1.8 mW/°C RqJA 556

MC68B21CP

Abstract: xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N
Contextual Info: SG379/D REV 7 Semiconductor Products Sector NORTH AMERICA SALES AND DISTRIBUTION PRICE LIST THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION – Please see General Information Section 1.3 EFFECTIVE DATE: JANUARY 10, 1998 General Information 1 Cross References

transistor mosfet buv18a

Abstract: M143206EVK MMBF4856 lm358 IC 68hc05sc24 telephone line interface circuit bc517 MC68B54 XC68HC705P9 MPX100ap BUV18A
Contextual Info: Device Index and Subject Index In Brief . . . Page Device Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.1–1 General Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2–1 Subject Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2–9

BC337 BC547

Abstract: MSB81T1 MBT3904DW9T1 marking 6AA SOD MVAM115 automatic stabilizer circuit diagram range 210 to 250 volts zt751 MBT3904DW9 transistor 2N4125 CT BC547 TRANSISTOR PIN DIAGRAM
Contextual Info: Small Signal Transistors, FETs and Diodes In Brief . . . New in this revision is Motorola’s GreenLine portfolio of devices. They feature energy–conserving traits superior to those of our existing line of standard parts for the same usage. GreenLine devices can actually help reduce the

2N3906 Darlington transistor

Abstract: BC337 MPS5172 "cross-reference" low noise transistors bc638 transistor mpf102 LOW NOISE BC638 SOT-346 431 BC237 BC307 BC212
Contextual Info: CHAPTER 1 Selector Guide http://onsemi.com 5 Small–Signal Bipolar Transistors, JFETs, and Diodes In Brief . . . Page Bipolar Transistors General–Purpose Transistors . . . . . . . . . . . . . . . . . 8 General–Purpose Multiple Transistors . . . . . . . . 11

TMG522E

Abstract: MC13027 2N3904 motorola IC 406 Murata SFH 450 filter SFG450F lm 458
Contextual Info: MC13027 MC13122 Product Preview AMAX Stereo Chipset The MC13027 and MC13122 have been specifically designed for AM radio which can meet the EIA/NAB AMAX requirements. They are essentially the same as the MC13022A and MC13025 with the addition of noise blanking circuitry. The noise blanker consists of a wide band amplifier

mps2112

Abstract: UC3842 smps design with TL431 MPS2111 dc motor speed control tl494 TRANSISTOR MPS2112 ic equivalent book ncp1203 mosfet triggering circuit USING TL494 smps with uc3842 and tl431 SG3526 tip122 tip127 mosfet audio amp
Contextual Info: SG388/D Rev. 4, May-2002 Master Components Selector Guide Master Components Selector Guide ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC SCILLC . SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular

schematic diagram atx Power supply 500w

Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455

CS5170

Abstract: mps2112 MPS2112ZL1 100A 300V IGBT MC3346P CS4124YDW16 ON Semiconductor PRICE BOOK 12V to 220V smps inverter bd234 igbt ac motor speed control
Contextual Info: SGD501/D REV 8, January 5, 2002 NORTH AMERICA SALES AND DISTRIBUTION ON Semiconductor PRICE BOOK THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION – Please see General Information Section EFFECTIVE DATE: JANUARY 5, 2002 General Information Elimination Of Ozone Depleting Chemicals . . . .

TRANSISTOR AH-16

Abstract: TRANSISTOR bH-16 equivalent of transistor bc212 bc 214 transistor marking code SOT-23 2FX 2907A PNP bipolar transistors SILICON TRANSISTOR FS 2025 marking JV SOD323 bf245 replacement GI 312 diode msd601
Contextual Info: DL126/D Rev. 7, Nov-2001 Small-Signal Device Data Bipolar Transistors, JFETs and Diodes Small-Signal Device Data ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC SCILLC . SCILLC reserves the right to make changes without further

N-Channel JFET FETs

Abstract: ft960 Field Effect Transistors C847 P-Channel Depletion Mosfets P-Channel Depletion Mode FET p-channel jfet rf JFET with Yos MTP75N06HD BS17
Contextual Info: ON Semiconductor Field Effect Transistors and Power TMOS MOSFETs ¨ Field Effect Transistors Field Effect Transistors JFETs TMOS MOSFETs JFETs operate in the depletion mode. They are available in both P- and N-channel and are offered in both Through-hole and Surface Mount Packages. Applications include generalpurpose amplified, switches and choppers, and RF amplifiers and mixers. These devices are