TN2905A
Abstract: PN2907A
Contextual Info: TN2905A Discrete P O W E R & S ig n a l Technologies National Semiconductor"' TN2905A PNP General Purpose Amplifier T h is d e v ic e is d e s ig n e d fo r u s e a s a g e n e ra l purp o se am p lifie r a n d sw itch requiring colle cto r c u rren ts to 5 0 0 m A , S o u rc e d from
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ic 5218 a
Abstract: LPKL D44H8 NZT44H8 4A04I SOED100 5219 5V REGULATOR
Contextual Info: D44H8 I NZT44H8 & Discrete PO W ER & S ig n a l Technologies National S e m i c o n d it c I o r ” D44H8 NZT44H8 NPN Power Amplifier This device is designed for power amplifier, regulator and switching circuits where speed Is important. Sourced from Process 4Q .
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d44h8nzt44h8o-220l5d1130+5ic 5218 alpkl4a04isoed1005219 5v regulator
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NDB6050
Abstract: NDP6050 js35
Contextual Info: Na t i o n a l March 1996 Semiconductor" N DP6050/ NDB6050 N-Channel Enhancement Mode Field Effect Transistor General Description These N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.
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797L
Abstract: NDS9952A 0040027
Contextual Info: May 1996 N ational f i Semiconductor" NDS9952A Dual N & P-Channel Enhancement Mode Field Effect Transistor Features General Description These dual N- and P-channel enhancement mode power field effect transistors are produced using National’s proprietary, high cell density, DMOS
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nds9952absd1130b50113000400eci+2797l0040027
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DIODE T50
Abstract: MMBD7000 mmbd1201 MA670
Contextual Info: MMBD7000 & Discrete POW ER & Signal Technologies National Semiconductor’ MMBD7000 High Conductance Ultra Fast Diode Sourced from P roce ss 1P. Se e MMBD1201-1205 for characteristics. Absolute Maximum Ratings* Symbol ta^scum essotnemisenoted Parameter Units
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mmbd7000mmbd1201-1205l5d1130004g5a1+40040sfl2diode t50mmbd1201ma670
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NDS8928
Abstract: ab-5 national
Contextual Info: National Semiconductor July 1996 ” NDS8928 Dual N & P-Channel Enhancement Mode Field Effect Transistor Features General Description These dual N- and P-Channel enhancem ent m ode p ow er fie ld effect tran sisto rs are produced using N ational's pro p rie ta ry, h ig h cell density, DMOS
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