L5D113D Search Results

2N508B

Abstract: 2N5088 national 2N5089 NATIONAL SEMICONDUCTOR 2N5088 2N5089 MMBT5088 MMBT5089 T092 LS5911
Contextual Info: 2N5088 / MMBT5088 12N50891 MMBT5089 & D iscrete P O W ER & S ig n a l Techno logies National S e m i c o n d u c t o r " MMBT5088 MMBT5089 2N5088 2N5089 NPN General Purpose Amplifier This device is designed for low noise, high gain, general purpose am plifier applications at collector currents from 1pA to 50 mA.

NDC7001C

Abstract: VX25
Contextual Info: National Semiconductor'" M arch 1 9 9 6 NDC7001C Dual N & P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual N and P-channel enhancement mode power field effect transistors are produced using National’s proprietary, high cell density, DMOS

NDB6050

Abstract: NDP6050 js35
Contextual Info: Na t i o n a l March 1996 Semiconductor" N DP6050/ NDB6050 N-Channel Enhancement Mode Field Effect Transistor General Description These N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.

2N3904 die

Abstract: spice model 2sa 2N3904 MMBT3904 MMPQ3904 PZT3904 SOIC-16 2n3904 spice
Contextual Info: . , D iscrete P O W ER & S ig n a l Technologies & 2N3904 MMBT3904 MMPQ3904 PZT3904 NPN General Purpose Amplifier T h is d e v ic e is d es ig n e d as a g e n e ra l p urpo se am p lifie r an d sw itch. T h e useful d yn am ic ra n g e e x te n d s to 1 0 0 m A a s a switch an d to

Contextual Info: 2N4126 I MMBT4126 Discrete POWER & Signal Technologies National Semiconductor" MMBT4126 2N4126 PNP General Purpose Amplifier This device is designed for general purpose amplifier and switching applications at collector currents to 10 as a switch and to 100