NDP6050 Search Results

az4v

Abstract: NDB6050 NDP6050
Contextual Info: March 1996 FAIRCHILD S E M IC O N D U C T O R NDP6050 / NDB6050 N-Channel Enhancement Mode Field Effect Transistor G eneral D escription Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell

NDB6050L

Abstract: 025Q NDP6050L
Contextual Info: FAIRCHILD iM IC G N D U C T D R April 1996 tm NDP6050L / NDB6050L N-Channel Logic Level Enhancement Mode Field Effect Transistor G eneral D escription Features These logic level N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary,

Contextual Info: F A IR C H IL D SEM IC ONDUCTO R April 1996 tm NDP6050L / NDB6050L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These logic level N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary,

NDB6050L

Abstract: NDP6050L
Contextual Info: April 1996 NDP6050L / NDB6050L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These logic level N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density

A24100

Abstract: NDB6050 NDP6050
Contextual Info: March 1996 NDP6050 / NDB6050 N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has

Transistors nd RR

Contextual Info: F A I R C H I L D iM IC D N D U C TQ R April 1 9 9 6 tm NDP6050L / NDB6050L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These logic level N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary,

p605

Abstract: 7622N
Contextual Info: March 1996 F A IR C H IL D SEM IC ONDUCTO R tm NDP6050 / NDB6050 N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell

Contextual Info: M arch 1996 F A IR C H IL D SEM IC ONDUCTO R tm NDP6050 / NDB6050 N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell

IRFZ44N complementary

Abstract: IRF3205 COMPLEMENTARY IRF3205 application a/surface mount IRFZ44N NBP6060 IRF3205 TO-220 philips 435-2 BUZ110S HRF3205 harris 4365
Contextual Info: 39460.3 - UltraFET Cross LC 1/22/98 10:42 AM Page 1 55V UltraFET MOSFETs Competitive Cross Reference HARRIS RECOMMENDED PART NUMBER PART NUMBER PACKAGE COMPETITOR FILE NUMBER HARRIS RECOMMENDED PART NUMBER PART NUMBER PACKAGE COMPETITOR FILE NUMBER BUK7508-55

mosfet cross reference

Abstract: SMP40N06 SMP75N06-08 SI9952DY SMP60N03-10L IRFZ44 TO-263 Si9948DY irf1010e equivalent IRLL014N NDT3055L
Contextual Info: Discrete POWER & Signal Technologies MOSFET Cross Reference Guide Industry Recommended Part Number Fairchild Device Package Industry Recommended Part Number Fairchild Device 2N7000 2N7000 TO-92, N IRF7203 FDS9435A 2N7002 2N7002 SOT-23, N IRF7204 NDS8434A SO-8, P

3.5b zener diode

Abstract: diode so3 NDB6050L NDP6050L
Contextual Info: National April 1996 S e m i c o n d u c t o r " N D P 6050L/ NDB6050L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These logic level N-Channel enhancement mode power field effect transistors are produced using

SSP35n03

Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
Contextual Info: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A

YTA630

Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
Contextual Info: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509

IRFZ44N complementary

Abstract: IRFz44n equivalent HRF3205 equivalent IRF3710 equivalent IRF3205 equivalent IRFP064N equivalent IRFP064N IRF3205 COMPLEMENTARY IRF3205 IRF3415 equivalent
Contextual Info: 108872 UltraFet LC 00045 8/29/00 11:16 AM Page 1 Fall 2000 Update UltraFET Summary Don’t Forget Intersil’s popular UltraFET family of over 200 products, from 30V to 200V. Find the perfect match for your circuit on our Line Cards: Automotive LC-00005.1,

NDB6050

Abstract: NDP6050 js35
Contextual Info: Na t i o n a l March 1996 Semiconductor" N DP6050/ NDB6050 N-Channel Enhancement Mode Field Effect Transistor General Description These N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.

HRF3205 equivalent

Abstract: IRFP064N equivalent IRF3205 equivalent IRFz44n equivalent irf3205 ups irf3710 equivalent HUF75337P3 equivalent IRFZ48N equivalent irfp064n HUF75343P3 equivalent
Contextual Info: 458 LC00004.1 UFET Linecard 9/28/99 11:49 AM Page 1 HOLE PUNCH THIS EDGE UltraFET MOSFET Update Fall 1999 NEW RELEASES NEW PRODUCTS “ON DECK” Polarity N/P BVDSS Volts Id Amps rDS ON @ 4.5V/5V Ohms rDS(ON) @ 10V Ohms Package X-REF D/E ? Comments HUF75545P3