NDS8928 Search Results

NDS8928

Contextual Info: July 1996 NDS8928 Dual N & P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual N- and P -Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high

Contextual Info: J u ly 1 9 9 6 N NDS8928 Dual N & P-Channel Enhancement Mode Field Effect Transistor General Description Features T hese d u al N -a n d P -C hannel e n h a n c e m e n t m o d e p o w er field effect transistors are prod u ced using N ational's proprietary, high cell density, DMOS

S-8928

Contextual Info: F A I R C H I L D iM IC D N D U C T Q R Ju |y 1 9 9 6 tm NDS8928 Dual N & P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual N- and P -Channel enhancement mode power field effect transistors are produced using Fairchild's

list of P channel power mosfet

Abstract: NDS8928
Contextual Info: July 1996 NDS8928 Dual N & P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual N- and P -Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high

CBVK741B019

Abstract: F011 F63TNR F852 L86Z NDS8928
Contextual Info: July 1996 NDS8928 Dual N & P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual N- and P -Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high

NDS8928

Abstract: ab-5 national
Contextual Info: National Semiconductor July 1996 ” NDS8928 Dual N & P-Channel Enhancement Mode Field Effect Transistor Features General Description These dual N- and P-Channel enhancem ent m ode p ow er fie ld effect tran sisto rs are produced using N ational's pro p rie ta ry, h ig h cell density, DMOS

p-channel 2.5v g-s mosfet

Abstract: NDS8928
Contextual Info: N July 1996 NDS8928 Dual N & P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual N- and P -Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology. This very high density process is

601lt

Abstract: Complementary MOSFET Half Bridge NDS351AN MDs9933 NDS331N NDS356 NDS9936 NDS9952A FDV302P
Contextual Info: Discrete Power and Signal Technologies Fairchild Sem iconductor Selection Guides Surface Mount Power MOSFETs Part Num ber v 3S IV _ J « L 'd A) _ " P i ' I I ' (W ) ¡Remarks P art V0S Num ber (V) iV t M » W w t u iv * » 45V Id (A) 2IV i Po j (W ) I Remarks |

mosfet cross reference

Abstract: SMP40N06 SMP75N06-08 SI9952DY SMP60N03-10L IRFZ44 TO-263 Si9948DY irf1010e equivalent IRLL014N NDT3055L
Contextual Info: Discrete POWER & Signal Technologies MOSFET Cross Reference Guide Industry Recommended Part Number Fairchild Device Package Industry Recommended Part Number Fairchild Device 2N7000 2N7000 TO-92, N IRF7203 FDS9435A 2N7002 2N7002 SOT-23, N IRF7204 NDS8434A SO-8, P

SSP35n03

Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
Contextual Info: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A

YTA630

Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
Contextual Info: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509

ss8050 d 331

Abstract: tip122 tip127 mosfet audio amp KSD180 KA1M0880 application note SS8550 D 331 dual cc BAW62 KA2S0680 ss8550 sot-23 MPSA92(KSP92) equivalent DIODE 1N4148 LL-34
Contextual Info: Power Products S e l e c t i o n G u i d e September, 1999 Power Products Table of Contents Alphanumeric Listing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2

NDS8928

Abstract: Dual N-CHANNEL ENHANCEMENT MODE POWER MOSFET 8A Dual N-CHANNEL ENHANCEMENT MODE POWER MOSFET 8A 4 P-channel AND N-Channel power mosfet SO-8 ENHANCEMENT Dual N & P-Channel MOSFET
Contextual Info: July 1996 N N D S8928 Dual N & P-Channel Enhancement Mode Field Effect Transistor General Description Features T hese dual N -a n d P -C hannel en h an c em en t m ode p o w er field effect transistors are produ ced using N ational's proprietary, high cell density, DMOS