NDS8410 Search Results

NDS8410

Contextual Info: February 1996 NDS8410 Single N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is

Contextual Info: NDS8410A Single 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET are produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and

Contextual Info: FAIRCHILD February 1997 SEM ICONDUCTO R NDS8410S Single N-Channel Enhancement Mode Field Effect Transistor Features G eneral D escription SO-8 N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell

NDS8410A

Contextual Info: March 1997 NDS8410A Single N-Channel Enhancement Mode Field Effect Transistor General Description Features SO-8 N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is

CBVK741B019

Abstract: F011 F63TNR F852 FDS9953A L86Z NDS8410
Contextual Info: February 1996 NDS8410 Single N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is

Contextual Info: January 1997 N ational PR ELIM IN A R Y Semiconductor NDS8410A Single N-Channel Enhancement Mode Field Effect Transistor General Description Features SO-8 N-Channel enhancem ent m ode pow er field effect transistors are produced using National's proprietary, high cell density, DMOS technology.

NDS8410S

Contextual Info: February 1997 NDS8410S Single N-Channel Enhancement Mode Field Effect Transistor General Description Features SO-8 N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is

NDS8410S

Abstract: 24D16 pf790
Contextual Info: N February 1997 NDS8410S Single N-Channel Enhancement Mode Field Effect Transistor General Description Features SO-8 N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology. This very high density process is especially tailored

CBVK741B019

Abstract: F011 F63TNR F852 FDS9953A L86Z NDS8410A
Contextual Info: March 1997 NDS8410A Single N-Channel Enhancement Mode Field Effect Transistor General Description Features SO-8 N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is

NDS8410

Contextual Info: N February 1996 NDS8410 Single N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology. This very high density process is especially tailored

F63TNR

Abstract: F852 FDS9953A L86Z NDS8410S CBVK741B019 F011
Contextual Info: February 1997 NDS8410S Single N-Channel Enhancement Mode Field Effect Transistor General Description Features SO-8 N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is

NDS8410A

Contextual Info: March 1997 NDS8410A Single N-Channel Enhancement Mode Field Effect Transistor General Description Features SO-8 N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is

Contextual Info: FAIRCHILD February 1996 SEM ICONDUCTO R NDS8410 Single N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect • 10A, 30V. R ^ , = 0.015Q @ VGS = 10V RDS ON| = 0.020n @ Vgs = 4.5V.

NDS8410A

Contextual Info: N January 1997 PRELIMINARY NDS8410A Single N-Channel Enhancement Mode Field Effect Transistor General Description Features SO-8 N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.

Contextual Info: February 1997 National Semiconductor NDS8410S Single N-Channel Enhancement Mode Field Effect Transistor General Description Features SO-8 N-Channel enhancem ent m ode pow er field effect transistors are produced using National's proprietary, high cell density, DMOS technology.

Contextual Info: February 1996 N NDS8410 Single N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancem ent m ode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.

s8410

Contextual Info: March 1997 FAIRCHILD M l G C IN D U O T O R NDS8410A Single N-Channel Enhancement Mode Field Effect Transistor Features G eneral D escription SO-8 N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell

NDS8410A

Contextual Info: NDS8410A Single 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET are produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and

CEP1238R0MC

Abstract: ZENER DIODE t2d 50V 20A step down regulator T2D DIODE 49 fet alternator regulator circuit T2D DIODE FDS6680A LTC1628 LTC3707 LTC3707EGN
Contextual Info: LTC3707 High Efficiency, 2-Phase Synchronous Step-Down Switching Regulator U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTIO The LTC 3707 is a high performance dual step-down switching regulator controller that drives N-channel synchronous power MOSFET stages. A constant frequency

TM 1628 28 pins

Abstract: LTC1628IG FDS6680A LTC1628 LTC1628C LTC1628CG LTC1628I 28 pin ic TM 1628
Contextual Info: LTC1628 High Efficiency, 2-Phase Synchronous Step-Down Switching Regulator U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTIO The LTC 1628 is a high performance dual step-down switching regulator controller that drives all N-Channel

CDRH125-100MC

Abstract: LM2640 LM2640MTC-ADJ LM2641 NDS8410
Contextual Info: LM2640 Dual Adjustable Step-Down Switching Power Supply Controller General Description Key Specifications The LM2640 is a dual step-down power supply controller intended for application in notebook personal computers and other battery-powered equipment. Fixed-frequency synchronous drive of logic-level N-channel

fqp60n06

Abstract: spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640
Contextual Info: MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL HITACHI ON-SEMI PHILIPS INFINEON SIEMENS TEMIC / VISHAY TOSHIBA IR IXYS ST Nearest Preferred Supplier

Contextual Info: LTC3728 Dual, 550kHz, 2-Phase Synchronous Step-Down Switching Regulator DESCRIPTION FEATURES n n n n n n n n n n n n n n n n n Dual, 180° Phased Controllers Reduce Required Input Capacitance and Power Supply Induced Noise OPTI-LOOP Compensation Minimizes COUT

LM2640

Abstract: LM2640MTC-ADJ
Contextual Info: LM2640 Dual Adjustable Step-Down Switching Power Supply Controller General Description Key Specifications The LM2640 is a dual step-down power supply controller intended for application in notebook personal computers and other battery-powered equipment. n