MMBTH81 Search Results

T3115

Contextual Info: MOTOROLA SC -CXSTRS/R DËT|b3b7a5L| □□aaobh F> 6 3 6 7 2 5 4 MOTOROLA SC 96D Ö 206 6 X S T R S /R F D T-31-15 M A X I M U M R A T IN G S R ating Sym bol V alue Unit MMBTH81 VCEO 20 Vdc Coilector-Base V oltage VcBO 20 Vdc Em itter-Base V oltage Ve b O

sot-23 Marking 3D

Abstract: SC59 Marking 3D MMBTH81LT1
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA UHF/VHF Transistor MMBTH81LT1 COLLECTOR 3 PNP Silicon Motorola Preferred Device 1 BASE 2 EMITTER MAXIMUM RATINGS 3 1 Rating Symbol Value Unit Collector–Emitter Voltage VCEO –20 Vdc Collector–Base Voltage VCBO –20

mpsh81 model

Contextual Info: MPSH81 / MMBTH81 MPSH81 MMBTH81 C E C E TO-92 B SOT-23 B Mark: 3D PNP RF Transistor This device is designed for general RF amplifier and mixer applications to 250 mHz with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 75. Absolute Maximum Ratings*

marking 8b sot-23

Abstract: MMBTH81LT1 sot-23 Marking 3D
Contextual Info: MOTOROLA Order this document by MMBTH81LT1/D SEMICONDUCTOR TECHNICAL DATA UHF/VHF Transistor MMBTH81LT1 COLLECTOR 3 PNP Silicon Motorola Preferred Device 1 BASE 2 EMITTER MAXIMUM RATINGS 3 1 Rating Symbol Value Unit Collector–Emitter Voltage VCEO –20 Vdc

LTED

Abstract: MPSH81 MARK CB SOT23
Contextual Info: S E M IC O N D U C T O R tm MPSH81 MMBTH81 SOT-23 B Mark: 3D PNP RF Transistor This device is designed for general RF am plifier and mixer applications to 250 mHz with collector currents in the 1.0 mA to 30 m A range. Sourced from Process 75. Absolute Maximum RâtinÇjS

Contextual Info: MPSH81 / MMBTH81 MPSH81 MMBTH81 C E C E TO-92 B SOT-23 B Mark: 3D PNP RF Transistor This device is designed for general RF amplifier and mixer applications to 250 mHz with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 75. Absolute Maximum Ratings*

nk90

Abstract: mje321 BF-133 CBVK741B019 F63TNR MMBTH81 MPSH81 PN2222N pnp rf transistor Bf133
Contextual Info: MPSH81 / MMBTH81 MPSH81 MMBTH81 C E C E TO-92 B SOT-23 B Mark: 3D PNP RF Transistor This device is designed for general RF amplifier and mixer applications to 250 mHz with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 75. Absolute Maximum Ratings*

transistor BC 236

Contextual Info: MPSH81 //W U Eq U TO MMBTH81 -236 23 TO S O T - -92 T L /G /10100-5 Bc T L /G /1 0 1 0 0 -1 PNP RF Transistor Electrical Characteristics Symbol ta = 25°c unless otherwise noted Parameter Min Max Units OFF CHARACTERISTICS v (BR)CEO V (B R )C BO V (B R )E B O

sot-23 Marking 3D

Contextual Info: MAXIMUM RATINGS Symbol Value C o lle c to r -E m it t e r V o lt a g e Rating VCEO -2 0 Unit Vdc C o lle c t o r -B a s e V o lt a g e VCBO -2 0 Vdc E m it te r - B a se V o lt a g e v ebo -3 .0 Vdc Symbol Max Unit PD 22 5 mW 1.8 m W /T MMBTH81LT1* CASE 318-07, STYLE 6

transistor mark 3d

Abstract: MMBTH81 MPSH81 3D TRANSISTOR BE SOT
Contextual Info: MPSH81 MMBTH81 C E C TO-92 BE SOT-23 B Mark: 3D PNP RF Transistor This device is designed for general RF amplifier and mixer applications to 250 mHz with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 75. Absolute Maximum Ratings* Symbol

Contextual Info: MMBTH81LT1 Transistors Bipolar PNP UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)20 V(BR)CBO (V)20 I(C) Max. (A) Absolute Max. Power Diss. (W)225m Minimum Operating Temp (øC)-55 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition)10

MARKING W3 SOT23 TRANSISTOR

Abstract: rf transistor mark code H1 transistor marking code ne SOT-23 marking code w2 sot23 pnp rf transistor sot23 Transistor marking p2 sot-23 Marking 3D marking 3d sot-23 Marking code mps
Contextual Info: MPSH81 / MMBTH81 MPSH81 MMBTH81 C E C E TO-92 B SOT-23 B Mark: 3D PNP RF Transistor This device is designed for general RF amplifier and mixer applications to 250 mHz with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 75. Absolute Maximum Ratings*

Contextual Info: SEMICONDUCTOR tm MPSH81 MMBTH81 Mark: 3D PNP RF Transistor This device is designed for general RF amplifier and mixer applications to 250 mHz with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 75. Absolute Maximum RatinQS TA = 250C unless otherwise noted

MMBTH81

Abstract: MPSH81
Contextual Info: S E M IC O N D U C T O R tm MPSHÔ1 MMBTH81 M ar k: 3 D PNP RF Transistor This device is designed for general RF am plifier and mixer applications to 250 mHz with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 75. Absolute Maximum RdtinÇjS

MMBTH81LT1

Abstract: MMBTH81L 3D marking sot23 sot-23 Marking 3D 3D sot23 diodes
Contextual Info: MOTOROLA Order this document by MMBTH81LT1/D SEMICONDUCTOR TECHNICAL DATA UHF/VHF Transistor MMBTH81LT1 COLLECTOR 3 PNP Silicon Motorola Preferred Device 1 BASE 2 EMITTER MAXIMUM RATINGS 3 1 Rating Symbol Value Unit Collector–Emitter Voltage VCEO –20 Vdc

transistor 6D

Abstract: D040 MMBTH81 MPSH81 transistor BUV 92
Contextual Info: MMBTH81 D is c r e te POV rE R & S i g n a l T ech r o lo g ie s National Semiconductor MPSH81 MMBTH81 S0T# B Mark: 3 D PNP RF Transistor This device is designed fo r general RF amplifier and mixer applications to 250 mHz with collector currents in the 1.0 mA

MPSH81

Abstract: MMBTH81 transistor mark 3d
Contextual Info: MPSH81 MMBTH81 C E C E TO-92 SOT-23 B B Mark: 3D PNP RF Transistor This device is designed for general RF amplifier and mixer applications to 250 mHz with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 75. Absolute Maximum Ratings* Symbol

MC68B21CP

Abstract: xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N
Contextual Info: SG379/D REV 7 Semiconductor Products Sector NORTH AMERICA SALES AND DISTRIBUTION PRICE LIST THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION – Please see General Information Section 1.3 EFFECTIVE DATE: JANUARY 10, 1998 General Information 1 Cross References

MMBT2904

Abstract: MMBT2904A MMBT3905 MMBT4916 MMBT3638A MMBT3702 MMBT3703 MMBT4402 MMBT4403 MMBT5143
Contextual Info: This s S S S ä d U C t o Surface Mount Transistors r General Purpose Amplifiers and Switches—PNP VCBO* VcEO VEB0 V (V) (V) Min Min Min By 40 5 MMBT2904A TO-236 (49) 60 40 5 MMBT2905 TO-236 (49) 60 40 5 MMBT2905A TO-236 (49) 60 40 5 MMBT2906 TO-236 (49)

MMBT5770

Abstract: KSC2223 KSC2756 KSC2757 KSC3123 KST10 KST5179 MMBT5179 MMBT918 MMBTH10
Contextual Info: Discrete Small Signal RF Products VCEO V VCBO (V) VEBO (V) IC fT hFE Max (A) (MHz) Min Max @VCE (V) Saturation Voltage @IC (mA) VCE (sat) (V) @IC (mA) @IB (mA) SOT-23 NPN Configuration KST5179 12 20 2.5 0.05 900 25 - 1 3 0.4 10 1 MMBT5179 12 20 2.5 0.05

MMBF112L

Abstract: MFE521 MMBF112 2N3797 equivalent MFE131 equivalent MPS5210 BC557 SOT23 8C448 BC459C mfe211
Contextual Info: motorcla sc xstrs / r ia e i o I bH t,?as4 3 o o ö s t ii Small-Signal Bipolar Transistors Plastic-Encapsulated M o to ro la 's s m a ll-s ig n a l T O -2 26 p la s tic tra n s is to rs e n c o m p a s s h u n d re d s o f d e v ic e s w ith a w id e v a rie ty

transistor mosfet buv18a

Abstract: M143206EVK MMBF4856 lm358 IC 68hc05sc24 telephone line interface circuit bc517 MC68B54 XC68HC705P9 MPX100ap BUV18A
Contextual Info: Device Index and Subject Index In Brief . . . Page Device Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.1–1 General Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2–1 Subject Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2–9

BC337 BC547

Abstract: MSB81T1 MBT3904DW9T1 marking 6AA SOD MVAM115 automatic stabilizer circuit diagram range 210 to 250 volts zt751 MBT3904DW9 transistor 2N4125 CT BC547 TRANSISTOR PIN DIAGRAM
Contextual Info: Small Signal Transistors, FETs and Diodes In Brief . . . New in this revision is Motorola’s GreenLine portfolio of devices. They feature energy–conserving traits superior to those of our existing line of standard parts for the same usage. GreenLine devices can actually help reduce the

triac zd 607

Abstract: 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845
Contextual Info: MASTER SELECTION GUIDE EUROPEAN SUPPLEMENT This is the European supplement to the USA edition of the Master Selection Guide, SG73/D REV 3. It should be read along with the USA edition. The supplement carries amendments to sections 1 and 5 in the USA edition.