T3115 Search Results

Contextual Info: II SILICON PLANAR EPITAXIAL TRANSISTOR P-N-P transistor in a microminiature plastic envelope, intended for applications in thick and thin-film circuits such as self-oscillating mixer in u.h.f. tuners in conjunction with bipolar transistors or with M O S fets.

TAIMAG HD 081 A

Abstract: ce-0702 TAIMAG HA 003 1C-8100 ALC660 CE-0703 0845a asus sw3205 R3627
Contextual Info: 5 4 3 2 1 G1S: MEROM/965-PM/ICH8-M/NB8P-GS BLOCK DIAGRAM CLOCK GEN CK505 ICS9LPR363CGLF-T D Merom CPU FAN + THERMAL SENSOR 478B uFCPGA VRAM CH.C GDDR3 *2 LVDS PAGE 45 PAGE 46 PAGE 50 FSB 800 MHz 136 FBGA PAGE 72 NVIDIA NB8P-GS CRT PAGE 3-6 VRAM CH.A GDDR3 *2

BFX89

Abstract: case BFX89 transistor IR 652 P
Contextual Info: N AMER P H I L I P S / D I S C R E T E 25E D • b tiS 3 T 3 1 0 0 1 flE 2 3 ■ BFX89 . 'T -S I-iÇ ' N-P-N H.F. WIDEBAND TRANSISTOR N-P-N transistor in a TO-72 metal envelope, with insulated electrodes and a shield lead connected to the case. The transistor has a low noise, a very high power gain and good intermodulation properties.

BF569

Abstract: sot-23 MARKING CODE ZA Self-Oscillating mixer transistor 359 A k
Contextual Info: SILICON PLANAR EPITAXIAL TRA N SISTO R P-N-P transistor in a microminiature plastic envelope, intended for applications in thick and thin-film circuits such as self-oscillating mixer in u.h.f. tuners in conjunction with bipolar transistors or with M O S fets.

BFG90A

Abstract: BFG51 Q017b BFG90 SOT-103 SOT103 transistor BT 136
Contextual Info: N AMER PHILIPS/DISCRETE 25 E bt.53131 Q Q 1 7 t 7 Î D Q • BFG51 T *- 31- I S~ P-N-P 2 GHz W IDEBAND TRANSISTOR P-N-P transistor in a four-lead dual emitter plastic envelope SOT-103 . This device is designed for application in wideband amplifiers, such as in C A T V and M A T V systems, up to 2 GHz.

K 3115

Abstract: transistor k30 KSC3125 KSC388 PC G 3115 samsung tv A12W k20a samsung tv test FC
Contextual Info: SAMSUNG SEMICONDUCTOR INC KSC3125 14E D J ? cl b m 4 a OOO^^S 1 NPN EPITAXIAL SILICON TRANSISTOR T-31-1B TV FINAL PICTURE AMPLIFIER APPLICATION SOT-23 ABSOLUTE MAXIMUM RATINGS T,=25°C Characteristic Collector-Base Voltage Cottector-Emitter Voltage Emitter-Base Voltage

2SC1809

Abstract: LB-10N 2SC 374
Contextual Info: — - 7= ?/-/£“ NPN ‘> ' j 3 > h 7 > V ^ ^ « a a Ü Î i f f l / R F Amplifier Epitaxial Planar NPN Silicon Transistor • W ë ’+ jiB /D Im e n e lc m s Unil : mm • «* 1) fj=6 00 M H z Typ<al 1 m A )fc » v \ 2) C«b^1.4pF Typ. (àt 6V)

BFR99

Abstract: BFR99 transistor
Contextual Info: 3DE D F I • 7 e15,ì537 QQaQ^bl H ■ T^3U5~ SGS-THOMSON iLieraKS BFR99 S 6 S-THOMSON DESCRIPTION The BFR99 is a silicon planar epitaxial PNP transis­ tor in Jedec TO-72 metal case, particularly designed for wide band common-emitter linear amplifier appli­

T3115

Contextual Info: MOTOROLA SC -CXSTRS/R DËT|b3b7a5L| □□aaobh F> 6 3 6 7 2 5 4 MOTOROLA SC 96D Ö 206 6 X S T R S /R F D T-31-15 M A X I M U M R A T IN G S R ating Sym bol V alue Unit MMBTH81 VCEO 20 Vdc Coilector-Base V oltage VcBO 20 Vdc Em itter-Base V oltage Ve b O

TO-236-AA

Contextual Info: 3>F|b3L.75S4 O D Û S Q h S S M O T O R O L A SC -CXSTRS/R F> 6367254 » M OT O RO L A S C XSTRS/R ' 96D 8 2 0 6 5 . _ F * T-31-15 M À XIM U M RATINGS Sym bol Value Unit Collector-Emitter Voltage VcEO 30 Vdc Collector-Base Voltage VCBO 40 Vdc Emitter-Base Voltage

Contextual Info: ROHM CO LTD IRHn 40E D . h 7 > V 7, $ / T ransistors 2SC1809 - 7 = j / - / r 2SC1! y y ^ > h 7 > y X $ i ^ ü ^ i i Î i Æ / R F Am plifier Epitaxial Planar N P N Silicon Transistor •

BFG51

Contextual Info: N AMER PHILIPS/DISCRETE bb53l31 Q017b7i 0 BFG51 H5E D J T - S I ~ I S~ P-N-P 2 GHz WIDEBAND TRANSISTOR •• » P-N-P transistor in a four-lead dual emitter plastic envelope SOT-103 . This device is designed for application in wideband amplifiers, such as in CATV and M A TV systems, up to 2 GHz.

1HT251

Abstract: 2T203 kt117 1T308 2T355A 2T312 IT308B K1HT251 kt117b 2T313
Contextual Info: WmmËÊÊm W h A iW f W * i r*ïS >*••> ro s ît. ;<W«a 7 mm m$m 15ÎÏ3 Sktófefc?¿feS 11181 immm SI f ' ■ ' ' ' : m S ËÊB B S M M CnPABOHHMK nonynpoBQQHHKOBbiE nPHBOPbl TPAH3MCTOPbl MAflOI/ì MOLUHOCTM n O f l PEA A K L4H EPÌ A . B rO flO M E A O B A

MC68070

Contextual Info: 7 Electrical and Physical Specifications This chapter describes the CL450’s electrical and mechanical character­ istics. The chapter is divided into three sections: • 7.1, Operating Conditions ■ 7.2, AC Timing Characteristics ■ 7.3, Package Specifications

2n3600

Abstract: 2N918 sy 171 BFX73 19S8 BFX73-2N918 G2053
Contextual Info: „ S C S -T H O M S O N B FX 73-2N 918 fc7 # 2 N 3 6 0 0 S G S - T H 0MS0N HIGH-FREQUENCY OSCILLATORS AND AMPLIFIERS The BFX73, 2N918 and 2N3600 are silicon planar epitaxial NPN transistors in Jedec TO-72 metal case. They are designed for low-noise VHF amplifiers, os­

PSD3-20

Abstract: PSD5-28
Contextual Info: • ■ ■ Uliw Split Bobbin Power Transformers 115V and 115/230V 50/60Hz T31 and T32 T31 Series:Single 115V Primary T32 SeriesiDual 115/230 V Primary Single Dual Secondary Connections Primary Primary Size Parallel Series P/N P/N VA VAC Arms VAC Arms T31-1-10

I12C

Abstract: KSC2758 samsung tuner
Contextual Info: SAMSUNG SEM ICON D UCTOR . INC KSC2758 14E D | T 'lb M m a OOObTSS fl | NPN EPITAXIAL SILICO N TRANSISTOR ' RF. MIXER FOR UHF TUNER T-31-15 SO T-23 • HIGH POWER GAIN TYP. 17d8 • LOW NF TYP. 2.8dB ABSOLUTE MAXIMUM RATINGS T,=25°C Characteristic Colector-Base Voltage

FL 210 transistor

Abstract: G1203 KSC3120 samsung tv
Contextual Info: SAMSUNG SEMICONDUCTOR INC KSC3120 14E D | 7^4142 0001^ 73 S J .-3 / | NPN EPITAXIAL SILICON TRANSISTOR MIXER FOR UHF TV TUNER Gc*=17c»B TYP C =0.6pF (TYP) SOT-23 ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Collector-Base Voltage Cottector-Emitter Voltage

BH RT transistor

Abstract: SOT-23 marking a8 KSC2757 N1000
Contextual Info: S A M S U N G S E M I C O ND UC TO R INC KSC2757 14E D | ?Tb41*42 OG Ob 'm T fi | NPN EPITAXIAL SILICO N TRANSISTOR T-31-15 MIXER OSCILLATOR FOR VHF TUNER SOT-23 HIGH fT fT*1100MHz lyp. ABSOLUTE MAXIMUM RATINGS (T,=25°C) Characteristic Symbol Collector-Base Voltage

asus F3J inverter

Abstract: T3509 schematic asus f3j inverter ALC660 asus f3j c2406 diode R5538D001 asus F3J Power inverter C2407 ASUS
Contextual Info: A B C D E F2J SCHEMATIC R11 ER Content PAGE 1 2 3 4 PAGE SYSTEM PAGE REF. 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 YONAH CPU (1) YONAH CPU (2) CPU CAP/THERMAL SENSOR CLOCK GEN.

D0312

Abstract: HA20 T3115
Contextual Info: 3QE D • o o a i s s 6 7 m s f Z 7 S G S -T H O M S O N “ 7# [f [L IO T s« S T T 2 N5179 S-THOMSON VHF/UHF AMPLIFIER DESC RIPTIO N The 2N5179 Is a silicon planar epitaxial NPN tran­ sistor in Jedec TO-72 metal case, intended for lownoise tuned-amplifier and converter applications up

Contextual Info: I 1 , 1. t N AMER PHILIPS/DISCRETE QbE D bb53T31 0015704 1 • BF536 SILICON PLANAR TRANSISTOR P-N-P transistor in a microminiature plastic envelope. Primarily intended for use as mixer in v.h.f. tuners. Also suitable as r.f. amplifier and oscillator in f.m. tuners.

BFR99A

Contextual Info: 3QE D • 715*1237 G 0 3 0 U 3 fi ■ ^ £ Z 7 S G S -T H O M S O N ^ 7 # _ ^ B @ |L i0 r a M a 0 i S 6 S-THOMSON — B FR 9 9 A WIDE BAND VHF/UHF AMPLIFIER ■ SILICON PLANAR EPITAXAL TRANSISTOR ■ TO -72 M ETAL CASE ■ VERY LO W NOISE A P P L IC A T IO N S :

BFY90 PHILIPS

Abstract: BFY90 ic 1014b PHILIPS WIDE BAND AMPLIFIERS 3I15 enamelled copper wire
Contextual Info: P hilips Sem iconductors Product specification NPN 1 GHz wideband transistor PHILIPS INTERNATIONAL DESCRIPTION SbE BFY90 T> 713.0a2b Dü4ti04S D24 • P H IN PINNING NPN transistor in a TO-72 metal envelope, with insulated electrodes and a shield lead connected to the