Q017B Search Results

Contextual Info: SAMSUNG ELECTRONICS INC b7E D • 7 ^ 4 1 4 2 Q017b32 32fi I SHGK PRELIMINARY KM616V513 CMOS SRAM 32,768 W O RD x 16 Bit High-Speed CMOS Static RAM 3.3V Operating FEATURES GENERAL DESCRIPTION • Fast A cc e s s Tim e: 17, 20, 25n s (M ax.) • Low Pow er D issipation

BFG51

Contextual Info: N AMER PHILIPS/DISCRETE bb53l31 Q017b7i 0 BFG51 H5E D J T - S I ~ I S~ P-N-P 2 GHz WIDEBAND TRANSISTOR •• » P-N-P transistor in a four-lead dual emitter plastic envelope SOT-103 . This device is designed for application in wideband amplifiers, such as in CATV and M A TV systems, up to 2 GHz.

Z86e4012

Abstract: Z86E40 SXGR 86E4012
Contextual Info: ZIL06 INC 30E D B =1=104043 D017b24 -1. » Z I L - T -4 9 -1 9 -0 7 P r o d u c t S p e c if ic a t io n Z8ÌE40 CMOS Z8 OTP CCP MICROCONTROLLER FEATURES • 8-bit CMOS microcontroller ■ Digital inputs CMOS levels, Schmitt triggered

3 phase ac motor speed control

Abstract: receiver 4310 fea IH08 DIODE YW 431 scr transistor marking code E3t
Contextual Info: DS83CH20 DALLAS SEMICONDUCTOR DS83CH20 Unified I/O PRODUCT SPECIFICATION Revision 1.3 Copyright 1997 by Dallas Semiconductor Corporation. All Rights Reserved. For important information regarding patents and other intellectual property rights, please refer to

BFG90A

Abstract: BFG51 Q017b BFG90 SOT-103 SOT103 transistor BT 136
Contextual Info: N AMER PHILIPS/DISCRETE 25 E bt.53131 Q Q 1 7 t 7 Î D Q • BFG51 T *- 31- I S~ P-N-P 2 GHz W IDEBAND TRANSISTOR P-N-P transistor in a four-lead dual emitter plastic envelope SOT-103 . This device is designed for application in wideband amplifiers, such as in C A T V and M A T V systems, up to 2 GHz.

MAG12M

Abstract: CSP1088 DSP1618 W2020 audi mmi TMS 2708 JL
Contextual Info: Microelectronics AT&T CSP1088 GSM Conversion Signal Processor for Cellular Handset and Modem Applications v2.2 Features Description • Seamless interface to the DSP1618 processor and W2020 RF transceiver The AT&T CSP1088 integrates the timing and control functions for GSM mobile application with the

TRW catalogue

Contextual Info: MI T S U B I S H I M E M O R Y / A S I C blE D • b S MT ñH S D D 1 7 b l 2 2T1 ■ MITI MITSUBISHI LSIs M S M W ^ y O J . L J P . R T - e . ^ r Ö . - e S r y S . - S S s p jx FAST PAGE MODE 4194304-BIT(262144-WORD BY 16-BIT)DYNAMIC RAM DESCRIPTION This is a family of 262144-word by 16-bit dynamic RAMs,

OF4456

Abstract: F65L
Contextual Info: M ITSUBISHI LSIs bEH'lßEß 0017b35 530 « Î 1 I T 4 I M5M82C800FP MI TS UB I S H I IUCMPTR/niPRC CMOS PROGRAMMABLE DMAC,IRC,TIMER DESCRIPTION The M 5 M 8 2 C 8 0 0 F P is a CM O S LSI equivalent to tw o M 5 M 8 2 C 3 7 A -5 , tw o M 5 M 8 2 C 5 9 A -2 , and one M 5 M 8 2 C 5 4 .

CXP80524

Abstract: CXP80P524 fuji lot code format
Contextual Info: CXP80P524 SONY CMOS 8-bit Single Chip Microcomputer Description The CXP80P524 is a CMOS 8-bit microcomputer which consists of arithmetic coprocessor, A/D converter, serial interface, timer/counter, time base timer, vector Interruption, high precision timing pattern

MTS-8d

Abstract: TLR328 N10080
Contextual Info: de I lO^SSO Q01-7Bêb < | 9097250 TOSHIBA DISCRETE/OPTO TLG358, TLG359, 99D 17225 TLG328, TLG329 GaP RED LIG H T EMISSION 9 Green Color, L3.Snn(0.:53a)Character Height Numerical Display. • Pin Connections for Static Drive • Available Both Polarity of Connections, Consnon Cathode or Conoon Anode.

Contextual Info: Ordering num ber : E N 4916A CMOS LSI LC35256A, AS, AM, AT-70/85/10 No. 4 916A 256K 32768 words x 8 bits SRAM with OE and CE Control Pins I Overview The LC35256A, AS, AM, and AT are 32768 words x 8-bits asynchronous silicon gate CMOS SRAMs. These products feature a 6-transistor full-CMOS memory cell,

Contextual Info: SAMSUNG ELECTRONICS INC b7E D • T 'ib M m E D C IlTfafel 41T ■ CMOS SRAM KM641005 256K X 4 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 20,25,35ns max. • Low Power Dissipation Standby (TTL) : 40mA (max.) (CMOS) : 2mA (max.)

n 431 transistor

Abstract: qml-38535 CDFP4-F16 el4 delta
Contextual Info: REVISIONS DESCRIPTION LTR DATE YR-MO-DA APPROVED REV SHEET REV SHEET REV STATUS OF SHEETS REV SHEET PMIC N/A STANDARD M ICRO CIRCUIT DRAW ING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE 8 PREPARED BY Marcia B Kelleher

Q3236I20N

Abstract: Q3036 Q3216 Qualcomm q3216 q32361 Q3236I-20N 213-044-602 q3236i Q3236 Q32361-20N
Contextual Info: Q3236 PHASE-LOCKED LO O P FR EQ U EN C Y SYNTHESIZER • Reference D ivisio n Ratios of 1 to 16 in D irect FEATU RES • Backwards Com patible w ith the Q3036 and Parallel Mode, or 1 to 64 in Serial and 8 -bit Bus Mode Q 3 2 1 6 PLL Chips • Program m ability for Faster M ultiplexing between

MSM51V17180-70

Abstract: MSM51V17180-80
Contextual Info: O K I Semiconductor MSM51V17180_ 1,048,576-Word x 18-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V17180 is a new generation Dynamic RAM organized as 1,048,576-word x 18-bit configuration. The technology used to fabricate the MSM51V17180 is OKI's CMOS silicon gate process technology.

mc1 electret microphone

Abstract: 3B159 CSP1088 electret condenser microphone element DSP1618 W2020 GMSK AIS audi mmi Q017b AIS TRANSMITTER GMSK
Contextual Info: Advance Data Sheet -a AT«T July 1995 ^^^Microelectronics AT&T CSP1088 GSM Conversion Signal Processor for Cellular Handset and Modem Applications v2.2 Features Description • Seamless interface to the DSP1618 processor and W2020 RF transceiver The AT&T CSP1088 integrates the timing and

pj60

Abstract: pj70 CXP80712B CXP80716B CXP80720B CXP80724B CXP87700 SPC700 CMOS drum generator
Contextual Info: SO NY IC XP80712B /80716B/80720B/80724B CMOS 8-bit Single Chip Microcomputer Description The CXP80712B/80716B/80720B/80724B is a CMOS 8-bit microcomputer which consists of A/D converter, serial interface, timer/counter, time base timer, high precision timing pattern generation circuit, PWM output,

Contextual Info: 16K X 32 CMOS DUAL-PORT STATIC RAM MODULE |d t / IDT7M1002 Integrated Device Technology, Inc. FEATURES DESCRIPTION • High-density 512K CMOS Dual-Port RAM module • Fast access times The IDT7M 1002 is a 16K x 32 high-speed CM OS Dual-Port Static RAM Module constructed on a co-fired ceramic sub­

headland 386

Abstract: transistor zo 607 MA 7S b2211 full subtractor using ic 74138
Contextual Info: LOGIC LCB300K Cell-Based 5 Volt ASIC Products Databook October 1994 This document contains proprietary information of LSI Logic Corporation. The information contained herein is not to be used by or disclosed to third parties without the express written permission of an officer of LSI Logic Corporation.

Contextual Info: Ordering number : EN5082A CMOS LSI LC321664BJ, BM, BT-70/80 No. 5082A SA\YO 1 MEG 65536 words x 16 bits DRAM Fast Page Mode, Byte Write Overview Package Dimensions The LC321664BJ, BM, BT is a CMOS dynamic RAM operating on a single 5 V power source and having a

pin diagram of ic 74163

Abstract: CD74HCT160 CD74HC160 IC 74160 CD54HC160 74163 four bit binary counter AL207 C074HC16
Contextual Info: .Technical Data F ile N u m b e r 1550 CD54/74HC/HCT160, CD54/74HC/HCT161 CD54/74HC/HCT162, CD54/74HC/HCT163 HARRIS SEMICOND SECTOR 27E » B 4302271 0G17hl2 □ • H A S 1 High-Speed CMOS Logic F U N C T IO N A L D IA G R A M PO PI P2 - Presettable Counters

Contextual Info: gT\ f if t y 4K X 36 BiCMOS DUAL-PORT STATIC RAM MODULE IDT7M1014 Integrated Devi ce Technology, Inc. FEATURES DESCRIPTION • High-density 4K x 36 BiCMOS Dual-Port Static RAM module • Fast access times — Commercial: 15, 20ns — Military: 25, 30ns

Contextual Info: Microelectronics July 1995 AT&T CSP1088 GSM Conversion Signal Processor for Cellular Handset and Modem Applications v2.2 Features Description • Seamless interface to the DSP1618 processor and W2020 RF transceiver The AT&T CSP1088 integrates the timing and

Contextual Info: T hat H E W IT T mL'ftm PACKARD Up to 6 GHz Low Noise Silicon Bipolar Transistor Technical Data AT-41470 Features • Low N oise Figure: 1.6 dB Typical at 2.0 GHz 3.0 dB Typical at 4.0 GHz • High A ssociated Gain: 14.5 dB Typical at 2.0 GHz 10.5 dB Typical at 4.0 GHz