19S8 Search Results

2N117

Abstract: 2n117 texas
Contextual Info: TYPE 2N117 N-P-N GROWN-JUNCTION SILICON TRANSISTOR B U L L E T I N N O . O L -S 5 8 8 9 6 , M A R C H 19S8 9 to 20 beta spread Specifically designed for high gain at high temperatures mechanical data Welded case with glass-to-metal hermetic seal between case and leads. Approximate weight is 1.7 grams.

74F258

Abstract: F258 74F258A N74F258AD N74F258AN N74F258D N74F258N
Contextual Info: PHILIPS INTERNATIONAL Philips Somiconductors-Signetics D ocum ent No. 853-0361 ECN No. 94759 Date o f issue O ctober 7 , 19S8 Status P roduct Specification FA ST Products FEATURES • Multifunction capability • Inverting data path • 3-state outputs • See 'F257A for non-inverting

SN74LS40

Abstract: SN74S40 19S8 SN5440 SN54LS40 SN54S40 SN7440 1331C 2BC17
Contextual Info: SN5440, SN54LS40, SN54S40, SN7440, SN74LS40, SN74S40 DUAL 4-INPUT POSITIVE NAND BUFFERS SDLS108 APRIL 1985 —REVISED MARCH 19S8 Package O u tlin e " and Fiat C eram ic O ptions Include Plastic " S m a ll Packages, C eram ic Chip Carriers Packages in A d d itio n to Plastic and

Contextual Info: * 4686226 I J3 X V S CORP □IXYS TECHNICAL DATA SHEET ] e | M b fltiE a b GDGOBIG 1 J~ 7W f W j DATA SHEET NO. 1 0 0 3 A August 19S8 IRFC350 High Voltage Power MOSFET Die N-Channel Enhancement Mode High Ruggedness Series

Philips FA 291

Abstract: BUV28AF BUV28F
Contextual Info: PHILIPS INTERNATIONAL 45E D a 711002b DD31DTS 2 C1PHIN BUV28F BUV28AF T-33-W SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed, glass-passivated npn power transistor in a SOT186 envelope with electrically isolated mounting base, intended for use in converters,' inverters, switching regulators, motor control

19S8

Abstract: CV3798
Contextual Info: Ref.: G75/2D Cold-Cathode Yoltage-Stabiliser Code: VR75/30 CV3798 < T h e V R 75/30 is a cold-cathode, gas-filled, volta ge -stabilise r fo r use in ind ustria l and ra d io e q u ip m e n t w h e re a stab le so u rc e of voltage is req uired . It is equ ivale n t t o th e U .S .A . O A 3 type.

16C153

Abstract: tvp ul 137 VID 200-12 TL031 T3D zener tl031c cj tl431 TL031A TL031ACD TL031AID
Contextual Info: TL031, TL031A ENHANCED-JFET LOW-POWER LOW-OFFSET OPERATIONAL AMPLIFIERS _ SLOSQ32C - JULY 1988 - RE VISED AUGUST 1994 Maximum Offset Voltage . . . 800 jiV High Slew R ate. . . 2.9 V/ps Typ Low Input Bias Current. . . 2 pA Typ Very Low Power Consumption

5962-89545

Abstract: 5962-8954501RX 54F579 5962-8954501
Contextual Info: REVISIONS LTR DATE YR-MO-M DESCRIPTION APPROVED REV SHEET REV SHEET REV STATUS OF SHEETS REV SHEET 1 2 3 4 5 6 7 9 10 11 12 13 14 15 16 PBEPARED BY PMICN/A f e w STANDARDIZED MILITARY DRAWING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE

Contextual Info: it N AFTER PHILIPS/DISCRETE 2SE I> bb53T31 001A7S1 3 • BUS23 SERIES T - 2 3 -'IS' SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed, glass-passivated npn power transistors in aTO-3 envelope, intended fo r use in converters, inverters, switching regulators, motor control systems etc.

Contextual Info: f""* 1 3.3V D U A L D I F F E R E N T I A L S Y N ER G Y P E C L-to -n t L/ \ r j o Ku f' ^ m I ^ ; PQE, , 71i translator S E M IC O N D U C T O R " ' ' “ DESCRIPTION FEATURES • 2.0ns typical propagation delay ■ <500ps typical output-to-output skew ■ Differential PECL inputs

7900901CX

Abstract: la 7830 DS7830W SNJ55183J SNJ55183W E583
Contextual Info: REVISIONS DATE YR-MO-M DESCRIPTION LTR Add case 2. Change CAGE code to 67268 conditions fo r table I . APPROVED 1989 MAY 18 Add Vcc to te s t E d ito ria l changes throughout Device type -01 AX in a c tiv e fo r new design as of 20 APRIL 1983. CURRENT CAGE CODE 67268

ME0412

Abstract: BC116 bc153 BC154 ME0413 ME0492 BC126 me0411 ME0402 V405A
Contextual Info: M icro - Electronics Sem iconductors PN P Transistors PN P General Purpose Transistors REFER EN C E T A B L E Code o o >> V EBO V BC153 BC154 40 40 5 5 50 160 BCY70 BCY71 BCY72 40 45 25 5 5 5 50 100 50 BFX48 30 5 6 6 5 45 45 25 ME0411 ME0412 ME0413 h FE min.

inverter yec

Abstract: yec inverter 74FS40 signetics 74F540 signetics 74F541
Contextual Info: Signetics FAST 74F540, 74F541 Buffers FAST Products 74F540 Octal Inverter Buffer 3-State 74F541 Octal Buffer (3-State) FEATURES Product Specification • High Impedance NPN baee inputs for reduced loading (20^A In High and Low states) • Low power, light bus loading

5962-8966401

Contextual Info: REVISIONS LTR DATE YH-MO-OA DESCRIPTION APPROVED REV SHEET REV SHEET REV STATUS OF SHEETS REV SHEET 1 2 3 PREPARED BY PMIC N/A Ji\ APPROVED BY C O a £ & THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENT S AND AGENCIES OF ^ he DEPARTMENT OF DEFENSE AMSC N/A

54HC08

Abstract: M38510/65203BCX
Contextual Info: R EV IS IO N S DESCRIPTION DATE YR-MO-QA B Convert to m ilit a r y drawing form at. Add LCC package to vendor CAGE 27014. Devices 01CX and 012X in a c tiv e fo r new design use M38510/65203BCX and M38510/65203B2X. Change code id e n t no. 67268. E d it o r ia l changes throughout.

Contextual Info: HB56UW3272 Series 33554432-word x 72-bit High Density Dynamic RAM Module HITACHI ADE-203-638 Z Preliminary Rev. 0.0 Aug. 30, 1996 Description The HB56UW 3272 Series belongs to 8-byte DIMM (Dual in-line M emory Module) family , and has been developed an optim ized m ain m em ory solution for 4 and 8-byte processor applications. The

dl 0265

Abstract: tbl 6/6000 RECTIFIER GI rs tube wia36 philips tubes
Contextual Info: PHILIPS TRIODE for use in television transmitters, A.M. or P.M. transmitters or industrial H.F. generators TRIODE pour utilisation dans émetteurs de télévision, émetteurs A.M. ou F.M., ou générateurs H.F. industriels TRIODE zur Verwendung in Fernsehsendern, AM-oder FM-Sendern, oder in HF-Industriegeneratoren

10H513

Abstract: MIL-M38510 41al
Contextual Info: REVISIONS LTR DATE vn-MO-CM DESCRIPTION Terminal connections changed to ta ble form. Change drawing CAGE code to 67268. Add fig u re 4. Technical change to 1.4. Technical changes to ta b les I and I I . E d it o r ia l changes throughout document. APPROVED

54HCT85

Contextual Info: R E V I S IO N S LTR DATE YR-MO-DA DESCRIPTION APPROVED REV SHEET REV SHEET REV STATUS OF SHEETS REV SHEET PMIC N/A 1 2 4 3 T H IS DRAWING IS AVAILABLE FOR U S E BY ALL DEPARTMENT S AND AGENCIES OF THE DEPARTMENT OF DEFENSE AM SC n ;a 6 PREPARED BY_. 'í&

ME0412

Abstract: ME0413 V405A BC153 me0411 BC126 2sc 1091 BC154 bc143 ME0404-2
Contextual Info: M icro - Electronics Sem iconductors PN P Transistors P N P General Purpose Transistors REFERENCE TA B LE o o >> V EBO V min. max. BC153 BC154 40 40 5 5 50 160 _ BCY70 BCY71 BCY72 40 45 25 5 5 5 50 100 50 BFX48 30 5 Code ME0411 ME0412 ME0413 6 6 5 45 45

49C460

Abstract: ITP015 29c660 49C460C MARKING CODE BZC 29C660B 5962-8853302U
Contextual Info: REVISIO N S LTR DESCRIPTION A DATE YR-MO-OA Add device types 03 through 05 fo r vendor CAGE 34335. A lte r e le c t r ic a l performance c h a r a c t e r is t ic s . Add ad d itio n al load c ir c u it (fig u re 5) fo r device types 03 through 05. Add device type 06 fo r vendor CAGE 61772. In a c tiv a te case Z .

V53C464-80

Abstract: V53C464-80L V53C464
Contextual Info: 9502310 VIT EL IC CORP 98D 00380 V I T E L I C CO RP Tfl jr “ VITELIC D - T-Vé-23-Z7 DE ^ TSD5310 DODGBflD S | VS3C464 FAMILY HIGH PERFORMANCE, LOW POWER 64 K X 4 B IT FAST PAGE M ODE CMOS D YN A M IC RAM HIGH PERFORMANCE V53C464 70/70L 10/10L 12/12L 80 ns

X2864Aemb-25

Abstract: X2864ADMB-25 74K-IM-W9U 20/AM2864A-25/BXA X2864ADMB35 X2864AD m2864 x2864aemb35 X2864AEMB25 WF vqe 24 e
Contextual Info: REVISIONS DATE YR-MO-OA LTR DESCRIPTION A E d ito r ia l changes th ro ug h ou t. Table I changes in c lu d e : Vjh change, regrouped devices to d if f e r e n t lim it s . Table I I , subgroups changed. Figures have been combined, some d e le te d . Q u a lity Assurance and Q u a lity conformance in s p e c tio n paragraphs

eabc80

Abstract: uabc 80 UABC80 EABC 80 WF Berlin E7049 I7070 "WF Berlin"
Contextual Info: <$> Kennblatt Kb Dreifachdiode-Triode E/P/üflBC 80 E7048/E7049/E7054 A llg e m e in e A n g a b e n Die Miniaturröhre (Noval) E/P/'UABC 80 besteht aus einer Diode mit großem Innenwiderstand für Amplituden-Demodulation, einer D uodiode mit kleinem , Innenwidersland für Frequenz-Demodulation speziell