BFR99 Search Results

BFR99

Abstract: BFR99 transistor
Contextual Info: 3DE D F I • 7 e15,ì537 QQaQ^bl H ■ T^3U5~ SGS-THOMSON iLieraKS BFR99 S 6 S-THOMSON DESCRIPTION The BFR99 is a silicon planar epitaxial PNP transis­ tor in Jedec TO-72 metal case, particularly designed for wide band common-emitter linear amplifier appli­

BFR99A

Abstract: BRF99A bfr99
Contextual Info: BFR99A WIDE BAND VHF/UHF AMPLIFIER . . . . SILICON PLANAR EPITAXAL TRANSISTOR TO-72 METAL CASE VERY LOW NOISE APPLICATIONS : TELECOMMUNICATIONS WIDE BAND UHF AMPLIFIER RADIO COMMUNICATIONS DESCRIPTION The BRF99A is a silicon planar epitaxial PNP transistor produced using interdigitated base emitter geometry. It is particulary designed for use in wide band

BFR99

Abstract: BFR99 transistor
Contextual Info: BFR99 DESCRIPTION The BFR99 is a silicon planar epitaxial PNP transistor in Jedec TO-72 metal case, particularly designed for wide band common-emitter linear amplifier applications up to 1GHz. It features high fT, low reverse capacitance, good cross-modulation properties and

BFR99

Abstract: BFR99 transistor BFr pnp transistor BFy 90 transistor
Contextual Info: BFR99 SILICON PLANAR PNP WIDE BAND VHF/UHF AMPLIFIER The BFR 99 is a silicon planar epitaxial PNP transistor in Jedec T O -7 2 metal case, particu­ larly designed fo r wide band co m m o n -e m itte r linear am plifier applications up to 1 GHz. It features very high f T , very low reverse capacitance, very good cross-m odulation properties

Contextual Info: 3DE D F I • 7 e15,ì537 QQaQ^bl H ■ T^3U5~ SGS-THOMSON iLieraKS BFR99 S 6 S-THOMSON DESCRIPTION The BFR99 is a silicon planar epitaxial PNP transis­ tor in Jedec TO-72 metal case, particularly designed for wide band common-emitter linear amplifier appli­

2N290SA

Abstract: sgs-ates sgs 2n2907a 2N4033 V405A BC479 2N2906A SGS-Ates BFY18 BFY64 BFX37
Contextual Info: SGS-ATES Semiconductors Transistors -P N P P N P Sm all Signal Transistors REFERENCE T A B LE Code M ax P t o t @ T AM8a*25’C W L V ceo (V ) lc R an ge (m A ) BC477 BC478 BC479 BFR38 BFR99 0.36 0.36 0.36 0.175 0.225 80 50 40 35 25 0.01-150 0.01-150 0.01-150

BFR36

Abstract: 2N3137 manchester encoder BFR99 C22B 2N5109 2N918 BFR99A BFX73 BFY90
Contextual Info: ¿7/ SGS-THOMSON TELECOM AND DATA COMMUNICATIONS H0 £[ 8 IHiOT(MD(gS RF & MICROWAVE TRANSISTORS J S TO 39 40 . 900 MHz CLASS A LINEAR FOR CATV/MATV APPLICATIONS Type PIU Package V(BR) CEO min It (V) (MHz) @ •c c 12e NF (mA) c 22b* (pF) (dB) @ ■c f

BFR99

Abstract: 2C4957 2n4957 die SILICON DICE motorola transistor dice
Contextual Info: MOTORO LA SC -CDIODES/OPTOJ 6367255 MOTOROLA SC 34 DlTJfc.3fc.72S5 003Ô0S4 CD I O D E S / O P T O 34C 38054 D T -3 Ì-J3 SILICON RF TRANSISTOR DICE continued) 2C4957 DIE NO. — PNP LINE SOURCE — RF502.57 c« This die provides performance equal to or better than that of

k2645

Abstract: k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417
Contextual Info: 1 BHIAB Electronics Du som söker besvärliga IC & transistorer, börja Ditt sökande hos oss – vi har fler typer på lager än man rimlingen kan begära av ett företag Denna utgåva visar lagerartiklar men tyvärr saknas priser och viss information Men uppdatering sker kontinuerligt

triac zd 607

Abstract: 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845
Contextual Info: MASTER SELECTION GUIDE EUROPEAN SUPPLEMENT This is the European supplement to the USA edition of the Master Selection Guide, SG73/D REV 3. It should be read along with the USA edition. The supplement carries amendments to sections 1 and 5 in the USA edition.

TDA0161 equivalent

Abstract: 1N3393 BDX54F equivalent byt301000 bux transient voltage suppressor ST90R9 ua776mh sgs 2n3055 Transistor morocco mje13007 inmos transputer reference manual
Contextual Info: SHORTFORM 1995 NOVEMBER 1994 USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED SGS-THOMSON PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF SGS-THOMSON Microelectronics. As used herein:

2N4427 equivalent bfr91

Abstract: bfr90 equivalent 2N5503 MRA1600-30 TPV-595A 2N3553 equivalent MRF477 equivalent MRA0500-19L 2N6084 equivalent MOTOROLA TRANSISTOR MRF239
Contextual Info: RF Power TMOS FETs Motorola RF Power MOSFETs, trademark TMOS , are constructed using a planar process to enhance manufacturing repeatability. They are N-channet field effect transistors with an oxide insulated gate which controls vertical current flow. Compared with bipolar transistors, RF Power FETs exhibit higher gain, higher input impedance, enhanced therm al stability

NE24483

Abstract: AF367 NE38883 BFT93R NE13783, ATF-10135 BFT92R BF936 CFX21 to119
Contextual Info: UHF AND MICROWAVE TRANSISTORS Item Number Part Number Po Manufacturer Max W V(BR)CBO (V) fose Max (Hz) Gp Po N.F. (dB) (W) (dB) at fTeat (Hz) Ie Max (A) TOpe, Mati. Max (OC) Package Style UHF/Microwav Transistors, Bipolar NPN (Co nt' d) S01543 ThmsnCSFEFC

BFR38

Abstract: BFR99 2N6080 2N956 BFX89 BSX33 9552N TO-117SL XO-72 pnp 2222a
Contextual Info: ^ 7 SGS-THOMSON TELECOM AND DATA COMMUNICATIONS G iflO M l(L g m M § RF & MICROWAVE TRANSISTORS TO 39 .380 4L STUD 130 . 230 MHz Type P/N SD SD SD SD SD .380 NARROW 4L STUD TO 60 Config. SD 1012 SD 1014-2 SD 1229-7 SD 1229-8 SD 1018 SD 1021 SD 1022

V405A

Abstract: BFR38 2N2907 plastic BFR99 BFY18 BFY64 sgs 2n2907a transistor 2N4033 2N2894 2N3209
Contextual Info: Fairchild Sem iconductors Sem iconductors Silicon Small Signal Transistors P N P High Speed Saturated Switching Transistors Metal Can T018, T039 R E FE R E N C E T A B L E For medium speed - see générai purpose section C H A R A C T E R IS T IC S M A X R A T IN G S

MHW721A2

Abstract: 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503
Contextual Info: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide Amplifier Data Sheets 5 Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions 8 Cross Reference and Sales Offices 9 MOTOROLA RF DEVICE DATA

BFR80

Abstract: BFR79 BFR81 BFT69 BFW32 700M BFQ37 BFQ38S BFR38 BFR52
Contextual Info: SEHELAB LTD 37E D • 6133157 DQQ0D5Q b « S U L B ~T~ 3 3 -Of , I •i Type No. Option''17 Polarlly Packa9 e v CEO hF E @ VC e / ' c fT PD PNP PNP PNP NPN PNP T039 T039 T072 T092 T092 300 250 35 20 80 0.2 1 20m 1 1 30-300 25min 25min 60min 50min 5 /10m 5 /50m

BFY90

Abstract: BFX89 BFY90 Data BFR99A case BFX89 J BFY90 bfx89-bfy90
Contextual Info: 30E D • 7^2=1237 Q 0 3 D C^ S T ■ ' ~ T ? 1 rrz SCS-THOMSON ^ 7# > [ - \ S BFX89 BFY90 S G S-THOMSON WIDE BAND VHF/UHF AMPLIFIER i SILICON PLANAR EPITAXIAL TRANSISTORS . TO-72 METAL CASE ■ VERY LOW NOISE APPLICATIO N S : ■ TELECOMMUNICATIONS ■ WIDE BAND UHF AMPLIFIER

BFR99A

Abstract: bfr99
Contextual Info: r ^ 7 z 7 S # G S - T H is O M S O N w a s r a tM o e s B F R 9 9 A WIDE BAND VHF/UHF AMPLIFIER • SILICO N PLANAR EPITAXAL TR AN SISTO R ■ TO -72 METAL CASE > V E R Y LOW N O ISE A P P L IC A T IO N S : . TELEC O M M UN IC A TIO N S ■ W ID E BAND UHF AMPLIFIER

BDY77

Abstract: BFR99 BDY79 BDY58B BDY61 BDY71 BFQ36 BDY45 BDY54 BDY55
Contextual Info: 4ÖE ì> m 0133167 DGGG450 4 T Ì SEMELAB ISMLB SEMELAB LTD T.Ay.a , BI POLAR TRANSISTORS CECC AND HIGH REL & HIGH ENERGY HI-REL Type Num ber BDY45 BDY46 BI1Y47 BDY54 BDY55 BDY56 BDY57 BDY58 BDY58A BDY58B BDY58C BDY60 BÜY61 BDY62 BDY71 BDY72 BDY73 BDY74

BFR36

Abstract: 2N3137 manchester encoder BFR99A DC Relay dip48 MK5030 BFX73 bfx73 lead type 2N5109
Contextual Info: /IT SGS-THOMSON TELECOM AND DATA COMMUNICATIONS * 7# » » la jg r a o r a o t s s SMALL SIGNAL TRANSISTORS C haracteristics Max ratings Polar. V CEO V *C (m A) Type P .o, (m W ) *T (M H z) ar d NF (dB) NPN NPN NPN PNP NPN NPN NPN 15 15 15 25 20 30 20 25

BFR99A

Contextual Info: 3QE D • 715*1237 G 0 3 0 U 3 fi ■ ^ £ Z 7 S G S -T H O M S O N ^ 7 # _ ^ B @ |L i0 r a M a 0 i S 6 S-THOMSON — B FR 9 9 A WIDE BAND VHF/UHF AMPLIFIER ■ SILICON PLANAR EPITAXAL TRANSISTOR ■ TO -72 M ETAL CASE ■ VERY LO W NOISE A P P L IC A T IO N S :

BFY90

Abstract: BFX89
Contextual Info: , inc. - Conductor TELEPHONE: (201 376-2922 (212) 227-6005 FAX: (201) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. BFX89 BFY90 WIDE BAND VHF/UHF AMPLIFIER , SILICON PLANAR EPITAXIAL TRANSISTORS , TO-72 METAL CASE , VERY LOW NOISE APPLICATIONS :

ME0412

Abstract: ME0413 V405A BC153 me0411 BC126 2sc 1091 BC154 bc143 ME0404-2
Contextual Info: M icro - Electronics Sem iconductors PN P Transistors P N P General Purpose Transistors REFERENCE TA B LE o o >> V EBO V min. max. BC153 BC154 40 40 5 5 50 160 _ BCY70 BCY71 BCY72 40 45 25 5 5 5 50 100 50 BFX48 30 5 Code ME0411 ME0412 ME0413 6 6 5 45 45