BF178
Abstract: bf179 BFT79 BF177 2N2219 2N2905 bf338 BFQ36 BC325 2N3571 2N3572
Contextual Info: Metal Can 0-76 Case BV CBO V V V 30 25 25 15 15 13 3 3 3 0 -4 8 0 2N3570 2N3571 2N3572 *Tt i 4-95JÍ -12-7 h min I—-5 -3 Dimensions in mm NPN NPN NPN T072 T072 T072 Maximum ratin as BV BV CEO EBO hFE1 • mA min. max. f 50 50 50 5 5 5 150 200 300 1000 450
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4-95j02n35702n35712n3572+132n9182n42522n4253bfq36bf257/8/9bfq37bf178bf179bft79bf1772n2219 2n2905bf338bc325
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F13S
Abstract: BFQ35 BC177 pnp transistor transistor bc303 transistor t05 BF179 2n3440 equivalent bc304 equivalent bc143 equivalent 2N3570
Contextual Info: Metal Can 0-76 Case BV CBO V V V 30 25 25 15 15 13 3 3 3 0 -4 8 0 2N3570 2N3571 2N3572 *Tt i 4-95JÍ -12-7 h min I—-5 -3 Dimensions in mm NPN NPN NPN T072 T072 T072 Maximum ratin as BV BV CEO EBO hFE1 • mA min. max. f 50 50 50 5 5 5 150 200 300 1000 450
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4-95j02n35702n35712n3572+142n9182n42522n4253high59bs9365f13sbfq35bc177 pnp transistortransistor bc303transistor t05bf1792n3440 equivalentbc304 equivalentbc143 equivalent
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BC177 NPN transistor
Abstract: BC178 TRANSISTOR bc108 bc325 bf179 BF177 transistor NPN BC178 applications of Transistor BC108 BC326 BFQ35
Contextual Info: Metal Can Metal Can Product Variations Low Level General Purpose Am plifiers TO-5, TO-39 and TO-18 can be supplied with several variations from standard. Device Type Lead Length The standard lead length is 12,7mm 0,5in . Certain types are available with longer leads— 38,1mm (1,5in) at a small extra
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bcw35gpbfq36bf257/8/9bfq37+162n22182n29042n2218a2n2904a2n22192n2905bc177 npn transistorbc178transistor bc108bc325bf179bf177transistor npn bc178applications of transistor bc108bc326bfq35
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50N240
Abstract: JE9093C LOW-POWER SILICON PNP HSE194
Contextual Info: LOW-POWER SILICON PNP Item Number Part Number 10 15 20 25 30 35 40 45 50 55 60 200 200 200 200 200 200 200 200 200 200 FMMTA93 BSSn BSSn MPSA93 ESM693 2SA1330 2SA133005 2SA1255 2SA1376AL 200 200 200 200 200 200 200 200 200 85 90 95 772 30 30 30 30 30 30 30
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mps-a93bf693mpsa9302n6432+8ph5415pn54152sb718bss74s50n240je9093clow-power silicon pnphse194
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BF177
Abstract: BC312 BF178 BF179 2N4260 BC142 2N3576 BFT39 2N3829 BF338
Contextual Info: 7 Metal Can High Current NPN Amplifiers Case Outlines Maximum ratinas Device Type BFT39 BFT40 BFT41 BFY50 BFY51 BFY52 ¡5 o £L NPN NPN NPN NPN NPN NPN BV BV BV Case CBO CEO EBO ICM mA V V V T039 T039 T039 T039 T039 T039 90 70 60 80 60 40 80 60 50 35 30 20
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bft39bft40bft41bft29+15bft30bft31bfy50bfy51bfy52bft53bf177bc312bf178bf1792n4260bc1422n35762n3829bf338
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NPN pnp MATCHED PAIRS 2n2905A 2N2219A
Abstract: BFR39 BFR80 BFR40 BS9300 BFR81 BC326 BFR79 TIS90 BFR62
Contextual Info: Silect Polarity General Purpose Transistors — Ic up to 800 mA Case Outlines Device Type case outline in brackets 2N3702 2N3703 2N3704 2N3705 2N3706 (1) (1) (1) (1) (1) TIS90 (1) TIS91 (1) PTOT Maximum ratings CEO V Cont IC A pk IC A Free Air @ 25‘C mW
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bs93652n40362n4037bs3365+122n40302n4031npn pnp matched pairs 2n2905a 2n2219abfr39bfr80bfr40bs9300bfr81bc326bfr79tis90bfr62
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C736
Abstract: C495 transistor bc303 equivalent 2N2222A 026 C735 bc143 equivalent bc143 C644 equivalent transistor 2N1711 transistor c633
Contextual Info: Metal Can 0-76 Case BV CBO V V V 30 25 25 15 15 13 3 3 3 0 -4 8 0 2N3570 2N3571 2N3572 *Tt i 4-95JÍ -12-7 h min I—-5 -3 Dimensions in mm NPN NPN NPN T072 T072 T072 Maximum ratin as BV BV CEO EBO hFE1 • mA min. max. f 50 50 50 5 5 5 150 200 300 1000 450
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4-95j02n35702n35712n3572+152n9182n42522n4253bs93002n2219ac736c495 transistorbc303 equivalent2n2222a 026c735bc143 equivalentbc143c644equivalent transistor 2n1711transistor c633
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BFR80
Abstract: BFR79 BFR81 BFT69 BFW32 700M BFQ37 BFQ38S BFR38 BFR52
Contextual Info: SEHELAB LTD 37E D • 6133157 DQQ0D5Q b « S U L B ~T~ 3 3 -Of , I •i Type No. Option''17 Polarlly Packa9 e v CEO hF E @ VC e / ' c fT PD PNP PNP PNP NPN PNP T039 T039 T072 T092 T092 300 250 35 20 80 0.2 1 20m 1 1 30-300 25min 25min 60min 50min 5 /10m 5 /50m
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fil331bfq375/10mbfq38s+1125min5/50mbfr3810/3mbfr52bfr80bfr79bfr81bft69bfw32700m
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BDY77
Abstract: BFR99 BDY79 BDY58B BDY61 BDY71 BFQ36 BDY45 BDY54 BDY55
Contextual Info: 4ÖE ì> m 0133167 DGGG450 4 T Ì SEMELAB ISMLB SEMELAB LTD T.Ay.a , BI POLAR TRANSISTORS CECC AND HIGH REL & HIGH ENERGY HI-REL Type Num ber BDY45 BDY46 BI1Y47 BDY54 BDY55 BDY56 BDY57 BDY58 BDY58A BDY58B BDY58C BDY60 BÜY61 BDY62 BDY71 BDY72 BDY73 BDY74
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bdy4520minddy46bdy54+11bdy55bdy56bdy57bdy58bdy77bfr99bdy79bdy58bbdy61bdy71bfq36
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y51 h 120c
Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK
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500ma240mwfy51 h 120cbd124+8kt368bfq59silec semiconductorsbd214al103afy18bd192mm1711
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2N3053 equivalent
Abstract: bf258 equivalent 2N2219 2N2905 BC107 equivalent transistors bc109 equivalent BF178 BC107 pnp equivalent BC177 equivalent bc303 f-002
Contextual Info: Metal Can Complementary Pairs Maximum ratin ps BV Case | Device Type Polarity Core Drivers BV BV CBO CEO EBO ICM V V V mA hFE1 Ic mA min. max. Ic mA HFE2 fT min. min. max. MHz VCE sat IC mA V 2N3724A NPN 2N3725A NPN T039 T039 50 80 30 50 6 6 1200 1200 100
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2n3724a2n3725a2n3244bf257+14bs93652n40362n4037bs33652n3053 equivalentbf258 equivalent2n2219 2n2905bc107 equivalent transistorsbc109 equivalentbf178bc107 pnp equivalentbc177 equivalentbc303f-002
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BC142 equivalent
Abstract: BC302 equivalent BF337 2N3440 8c BF259 2N3440 COMPLEMENTARY 2N3829 bf258 equivalent 2N4260 BFT39
Contextual Info: 7 Metal Can High Current NPN Amplifiers Case Outlines Maximum ratinas Device Type BFT39 BFT40 BFT41 BFY50 BFY51 BFY52 ¡5 o £L NPN NPN NPN NPN NPN NPN BV BV BV Case CBO CEO EBO ICM mA V V V T039 T039 T039 T039 T039 T039 90 70 60 80 60 40 80 60 50 35 30 20
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bft39bft40bft41bft29+15bft30bft31bfy50bfy51bfy52bft53bc142 equivalentbc302 equivalentbf3372n3440 8cbf2592n3440 complementary2n3829bf258 equivalent2n4260
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BF907
Abstract: BF900 BF910 BF914 BF479S Siemens BF479T NE56755 BF540 BFQ14
Contextual Info: UHF AND MICROWAVE TRANSISTORS Item Number Part Number Manufacturer Po Max W Gp V(BR)CBO (V) Po N.F. at. MatI. Toper Max °C (W) Package Style UHFIMicrowave Transistors, Bipolar NPN (Co nt' d) 5 10 15 20 25 30 35 40 45 50 BFQ73S BFR96 AT41435-5 AT420S5 AT414S5
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bfq73sbfr96at41435-5at420s5+16at414s5at41435-3at41470at41410ne9s203ne9s20sbf907bf900bf910bf914bf479ssiemensbf479tne56755bf540bfq14
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2N2219 2N2905
Abstract: BF177 BF178 BF338 bf179 BC312 BF337 BFT37 BF336 bc143
Contextual Info: Metal Can Complementary Pairs BV Case A M edium Current Am plifiers &• Sw itches Maximum ratin ps | Device Type Polarity Core Drivers b BV BV hFE1 CBO CEO EBO ICM HFE2 Ic fT min. Ic V V V mA mA min. max. mA min. max. M H z V C E sat) IC Max. ton Max.
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2n3724a2n3725a2n3244bf257+16bfq36bf257/8/9bfq372n22182n29042n2218a2n2219 2n2905bf177bf178bf338bf179bc312bf337bft37bf336bc143
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