BFQ35 Search Results

BF178

Abstract: bf179 BFT79 BF177 2N2219 2N2905 bf338 BFQ36 BC325 2N3571 2N3572
Contextual Info: Metal Can 0-76 Case BV CBO V V V 30 25 25 15 15 13 3 3 3 0 -4 8 0 2N3570 2N3571 2N3572 *Tt i 4-95JÍ -12-7 h min I—-5 -3 Dimensions in mm NPN NPN NPN T072 T072 T072 Maximum ratin as BV BV CEO EBO hFE1 • mA min. max. f 50 50 50 5 5 5 150 200 300 1000 450

F13S

Abstract: BFQ35 BC177 pnp transistor transistor bc303 transistor t05 BF179 2n3440 equivalent bc304 equivalent bc143 equivalent 2N3570
Contextual Info: Metal Can 0-76 Case BV CBO V V V 30 25 25 15 15 13 3 3 3 0 -4 8 0 2N3570 2N3571 2N3572 *Tt i 4-95JÍ -12-7 h min I—-5 -3 Dimensions in mm NPN NPN NPN T072 T072 T072 Maximum ratin as BV BV CEO EBO hFE1 • mA min. max. f 50 50 50 5 5 5 150 200 300 1000 450

BC177 NPN transistor

Abstract: BC178 TRANSISTOR bc108 bc325 bf179 BF177 transistor NPN BC178 applications of Transistor BC108 BC326 BFQ35
Contextual Info: Metal Can Metal Can Product Variations Low Level General Purpose Am plifiers TO-5, TO-39 and TO-18 can be supplied with several variations from standard. Device Type Lead Length The standard lead length is 12,7mm 0,5in . Certain types are available with longer leads— 38,1mm (1,5in) at a small extra

Contextual Info: SEMELAB LTD Type No. 37E T> Reliability Polarity Option Package v CEO •c cont S1331fi7 T ■ SHLB V c e /Ic «T Pd 1 I i SCREEN SCREEN SCREEN SCREEN SCREEN NPN NPN NPN NPN NPN TO 3 TO 3 TO 3 T03 TO 3 350 300 250 350 300 3 3 3 10 10 15-60 25-80 25-80 15-60

BF177

Abstract: BC312 BF178 BF179 2N4260 BC142 2N3576 BFT39 2N3829 BF338
Contextual Info: 7 Metal Can High Current NPN Amplifiers Case Outlines Maximum ratinas Device Type BFT39 BFT40 BFT41 BFY50 BFY51 BFY52 ¡5 o £L NPN NPN NPN NPN NPN NPN BV BV BV Case CBO CEO EBO ICM mA V V V T039 T039 T039 T039 T039 T039 90 70 60 80 60 40 80 60 50 35 30 20

NPN pnp MATCHED PAIRS 2n2905A 2N2219A

Abstract: BFR39 BFR80 BFR40 BS9300 BFR81 BC326 BFR79 TIS90 BFR62
Contextual Info: Silect Polarity General Purpose Transistors — Ic up to 800 mA Case Outlines Device Type case outline in brackets 2N3702 2N3703 2N3704 2N3705 2N3706 (1) (1) (1) (1) (1) TIS90 (1) TIS91 (1) PTOT Maximum ratings CEO V Cont IC A pk IC A Free Air @ 25‘C mW

C736

Abstract: C495 transistor bc303 equivalent 2N2222A 026 C735 bc143 equivalent bc143 C644 equivalent transistor 2N1711 transistor c633
Contextual Info: Metal Can 0-76 Case BV CBO V V V 30 25 25 15 15 13 3 3 3 0 -4 8 0 2N3570 2N3571 2N3572 *Tt i 4-95JÍ -12-7 h min I—-5 -3 Dimensions in mm NPN NPN NPN T072 T072 T072 Maximum ratin as BV BV CEO EBO hFE1 • mA min. max. f 50 50 50 5 5 5 150 200 300 1000 450

BDY77

Abstract: BFR99 BDY79 BDY58B BDY61 BDY71 BFQ36 BDY45 BDY54 BDY55
Contextual Info: 4ÖE ì> m 0133167 DGGG450 4 T Ì SEMELAB ISMLB SEMELAB LTD T.Ay.a , BI POLAR TRANSISTORS CECC AND HIGH REL & HIGH ENERGY HI-REL Type Num ber BDY45 BDY46 BI1Y47 BDY54 BDY55 BDY56 BDY57 BDY58 BDY58A BDY58B BDY58C BDY60 BÜY61 BDY62 BDY71 BDY72 BDY73 BDY74

y51 h 120c

Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK

2N3053 equivalent

Abstract: bf258 equivalent 2N2219 2N2905 BC107 equivalent transistors bc109 equivalent BF178 BC107 pnp equivalent BC177 equivalent bc303 f-002
Contextual Info: Metal Can Complementary Pairs Maximum ratin ps BV Case | Device Type Polarity Core Drivers BV BV CBO CEO EBO ICM V V V mA hFE1 Ic mA min. max. Ic mA HFE2 fT min. min. max. MHz VCE sat IC mA V 2N3724A NPN 2N3725A NPN T039 T039 50 80 30 50 6 6 1200 1200 100

BC142 equivalent

Abstract: BC302 equivalent BF337 2N3440 8c BF259 2N3440 COMPLEMENTARY 2N3829 bf258 equivalent 2N4260 BFT39
Contextual Info: 7 Metal Can High Current NPN Amplifiers Case Outlines Maximum ratinas Device Type BFT39 BFT40 BFT41 BFY50 BFY51 BFY52 ¡5 o £L NPN NPN NPN NPN NPN NPN BV BV BV Case CBO CEO EBO ICM mA V V V T039 T039 T039 T039 T039 T039 90 70 60 80 60 40 80 60 50 35 30 20

BF907

Abstract: BF900 BF910 BF914 BF479S Siemens BF479T NE56755 BF540 BFQ14
Contextual Info: UHF AND MICROWAVE TRANSISTORS Item Number Part Number Manufacturer Po Max W Gp V(BR)CBO (V) Po N.F. at. MatI. Toper Max °C (W) Package Style UHFIMicrowave Transistors, Bipolar NPN (Co nt' d) 5 10 15 20 25 30 35 40 45 50 BFQ73S BFR96 AT41435-5 AT420S5 AT414S5

2N2219 2N2905

Abstract: BF177 BF178 BF338 bf179 BC312 BF337 BFT37 BF336 bc143
Contextual Info: Metal Can Complementary Pairs BV Case A M edium Current Am plifiers &• Sw itches Maximum ratin ps | Device Type Polarity Core Drivers b BV BV hFE1 CBO CEO EBO ICM HFE2 Ic fT min. Ic V V V mA mA min. max. mA min. max. M H z V C E sat) IC Max. ton Max.

APY12

Abstract: BYY32 ac176 AEY26 BAV77 bby20 BD545B BAV27 transistor KT 209 M AF367
Contextual Info: Semiconductors Semiconducteurs Halbleiter YEARLY EDITION - EDITION AN N UELLE - jX H R LIC H E AU SG A BE SIXTH EDITION SIXIEME EDITION SECHSTE AUSGABE 1978 Compiled by: Association Internationale PRO ELECTRON, Bd. de Waterloo, 103, B 1000 BRUSSELS Published by: JE. E KLUWER, B 2100 DEURNE-ANTWERP