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    Samsung Electro-Mechanics CIS21J121NE

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    Chip 1 Exchange CIS21J121NE 4,160
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    Vyrian CIS21J121NE 12,107
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    Samsung Electronics Co. Ltd CIS21J121NE

    Ferrite Bead 0805 2012 Metric 120 Ohm 5 A 20 Milliohm 25 (Alt: CIS21J121NE)
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    Avnet Abacus CIS21J121NE 143 Weeks 4,000
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    IS21J Datasheets Context Search

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    zo 103 ma

    Abstract: transistor ZO 103 MA siemens OF IC 741 SS 424 02 31 zo 103 ma 75 750 MARKING CODE F5T Q62702-F1104 BFQ 51 ZO 103 NA BFQ73S
    Contextual Info: SIEMENS NPN Silicon RF Transistor BFQ 73S • For low-noise, low-distortion broadband amplifiers in antenna and telecommunications systems up to 2 GHz at collector currents from 10 mA to 70 mA. • Hermetically sealed ceramic package. • HiRel/Mil screening available.


    OCR Scan     		vce05181q62702-f1104a23sb05ddb71bs+9zo 103 matransistor zo 103 masiemens of ic 741ss 424 02 31zo 103 ma 75 750marking code f5tbfq 51zo 103 nabfq73s PDF

    transistor zo 103 MA 7S 738

    Abstract: BFQ72 SiEMENS PM 350 98 Q62702-F776 VCE05181 siemens 350 98 siemens Pm 90 87
    Contextual Info: SIEMENS NPN Silicon RF Transistor • For low-distortion broadband amplifiers up to 2 GHz at collector currents from 10 mA to 30 mA. • Hermetically sealed ceramic package. • HiRel/Mil screening available. £ CECC-type available: CECC 50002/263. ESD: Electrostatic discharge sensitive device, observe handling precautions!


    OCR Scan     		bfq72q62702-f776fl235b0500b714s+5transistor zo 103 ma 7s 738siemens pm 350 98vce05181siemens 350 98siemens pm 90 87 PDF