MPSH81 Search Results

MPSH81

Contextual Info: MOTOROLA Order this document by MPSH81/D SEMICONDUCTOR TECHNICAL DATA RF A m plifier Transistor MPSH81 PNP Silicon Motorola Preferred Device COLLECTOR 3 1 BASE 2 EMITTER MAXIMUM RATINGS Symbol Value Unit v CEO -2 0 Vdc Collector-Base Voltage v CBO -2 0 Vdc

MPSH81

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA RF A m plifier Transistor PNP Silicon MPSH81 COLLECTOR Motorola Preferred Device 3 1 BASE 2 EMITTER M AXIMUM RATINGS Symbol Value Unit Collector-Emitter Voltage Rating VCEO -20 Vdc Collector-Base Voltage VCBO -20 Vdc Emitter-Base Voltage

mpsh81 model

Contextual Info: MPSH81 / MMBTH81 MPSH81 MMBTH81 C E C E TO-92 B SOT-23 B Mark: 3D PNP RF Transistor This device is designed for general RF amplifier and mixer applications to 250 mHz with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 75. Absolute Maximum Ratings*

B34 transistor

Abstract: MPSH10 MPSH81 GHz PNP transistor transistor 911 transistor k 911
Contextual Info: Philips Semiconductors Product specification x>y7'& PNP 1 GHz switching transistor PHILIPS INTERNATIONAL FEATURES SbE D € MPSH81 711DfiEb QG4bD75 flbl B P H I N PINNING • Low cost • High transition frequency. PIN DESCRIPTION DESCRIPTION 1 collector 2

LTED

Abstract: MPSH81 MARK CB SOT23
Contextual Info: S E M IC O N D U C T O R tm MPSH81 MMBTH81 SOT-23 B Mark: 3D PNP RF Transistor This device is designed for general RF am plifier and mixer applications to 250 mHz with collector currents in the 1.0 mA to 30 m A range. Sourced from Process 75. Absolute Maximum RâtinÇjS

Contextual Info: MPSH81 / MMBTH81 MPSH81 MMBTH81 C E C E TO-92 B SOT-23 B Mark: 3D PNP RF Transistor This device is designed for general RF amplifier and mixer applications to 250 mHz with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 75. Absolute Maximum Ratings*

MPSH81

Abstract: TAG 92 transistor MPSH10
Contextual Info: ^ iP ^ e n ^ o n d u c to r s ^ i — b b S B 'm 0D321ÛS 32T • A P X - | | ^ ^ r o d u c t s p e c j f jc a ^ PNP 1 GHz switching transistor £ MPSH81 N AUER PHILIPS/DISCRETE FEATURES b'lE T> PINNING PIN • Low cost • High transition frequency. DESCRIPTION

nk90

Abstract: mje321 BF-133 CBVK741B019 F63TNR MMBTH81 MPSH81 PN2222N pnp rf transistor Bf133
Contextual Info: MPSH81 / MMBTH81 MPSH81 MMBTH81 C E C E TO-92 B SOT-23 B Mark: 3D PNP RF Transistor This device is designed for general RF amplifier and mixer applications to 250 mHz with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 75. Absolute Maximum Ratings*

DELTA fan bfb

Abstract: BC237 TRANSISTOR REPLACEMENT FOR 2N3053 BC547 REPLACE t1 bc140 BC108 motorola 2n2222 sot323 MOTOROLA LOT MARKINGS
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA RF Amplifier Transistor MPSH81 PNP Silicon COLLECTOR 3 Motorola Preferred Device 1 BASE 2 EMITTER 1 2 3 CASE 29–04, STYLE 2 TO–92 TO–226AA MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage

transistor BC 236

Contextual Info: MPSH81 //W U Eq U TO MMBTH81 -236 23 TO S O T - -92 T L /G /10100-5 Bc T L /G /1 0 1 0 0 -1 PNP RF Transistor Electrical Characteristics Symbol ta = 25°c unless otherwise noted Parameter Min Max Units OFF CHARACTERISTICS v (BR)CEO V (B R )C BO V (B R )E B O

Contextual Info: MPSH81* CASE 29-04, STYLE 2 TO-92 TO-226AA MAXIMUM RATINGS ¡Symbol Value Unit Co llecto r-Em itter Voltage Rating VcEO -2 0 Vdc C o llecto r-Base Voltage VCBO -20 Vdc Em itter-Base Voltage v EBO - 3 .0 Vdc ,PD 350 2.81 mW m W *C T j- ^stg - 5 5 to +150

transistor mark 3d

Abstract: MMBTH81 MPSH81 3D TRANSISTOR BE SOT
Contextual Info: MPSH81 MMBTH81 C E C TO-92 BE SOT-23 B Mark: 3D PNP RF Transistor This device is designed for general RF amplifier and mixer applications to 250 mHz with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 75. Absolute Maximum Ratings* Symbol

Contextual Info: Philips Semiconductors Product specification bbS3131 0032165 32T * A P X P N P 1 GHz switching transistor S MPSH81 N AUER PHILIPS/DISCRETE FEATURES b'lE D PINNING PIN • Low cost • High transition frequency. DESCRIPTION DESCRIPTION 1 collector 2 emitter

MARKING W3 SOT23 TRANSISTOR

Abstract: rf transistor mark code H1 transistor marking code ne SOT-23 marking code w2 sot23 pnp rf transistor sot23 Transistor marking p2 sot-23 Marking 3D marking 3d sot-23 Marking code mps
Contextual Info: MPSH81 / MMBTH81 MPSH81 MMBTH81 C E C E TO-92 B SOT-23 B Mark: 3D PNP RF Transistor This device is designed for general RF amplifier and mixer applications to 250 mHz with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 75. Absolute Maximum Ratings*

MPSH81

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA RF A m plifier Transistor PNP Silicon MPSH81 COLLECTOR Motorola Preferred Device 3 2 EMITTER M A XIM U M RATINGS Rating Collector- Emitter Voltage Symbol Value Unit Vdc VCEO -20 Collector-Base Voltage VCBO -20 Vdc Emitter-Base Voltage

mpsh81 model

Abstract: MMBTH81 CBVK741B019 F63TNR MPSH81 PN2222N NE-21 BF-133
Contextual Info: MPSH81 / MMBTH81 MPSH81 MMBTH81 C E C E TO-92 B SOT-23 B Mark: 3D PNP RF Transistor This device is designed for general RF amplifier and mixer applications to 250 mHz with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 75. Absolute Maximum Ratings*

RF POWER TRANSISTOR 100MHz

Abstract: transistor marking RF transistor case To 92
Contextual Info: MPSH81 Central TM Semiconductor Corp. PNP SILICON RF TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR MPSH81 is a PNP Silicon Transistor designed for general purpose RF amplifier applications. MARKING: FULL PART NUMBER TO-92 CASE MAXIMUM RATINGS: TA=25°C

transistor 6D

Abstract: D040 MMBTH81 MPSH81 transistor BUV 92
Contextual Info: MPSH811MMBTH81 D is c r e te POV rE R & S i g n a l T ech r o lo g ie s National Semiconductor MPSH81 MMBTH81 S0T# B Mark: 3 D PNP RF Transistor This device is designed fo r general RF amplifier and mixer applications to 250 mHz with collector currents in the 1.0 mA

MPSH81

Abstract: MMBTH81 transistor mark 3d
Contextual Info: MPSH81 MMBTH81 C E C E TO-92 SOT-23 B B Mark: 3D PNP RF Transistor This device is designed for general RF amplifier and mixer applications to 250 mHz with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 75. Absolute Maximum Ratings* Symbol

MC68B21CP

Abstract: xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N
Contextual Info: SG379/D REV 7 Semiconductor Products Sector NORTH AMERICA SALES AND DISTRIBUTION PRICE LIST THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION – Please see General Information Section 1.3 EFFECTIVE DATE: JANUARY 10, 1998 General Information 1 Cross References

PN4250

Abstract: 2N5086 MPS6523 MPSH81 PN4249 PN4250A
Contextual Info: This I D" Material In . Discrete POWER & Signal Technologies □ National t-1 Se mi c o n d u c t o r ' “ fc-1 PNP Low Level Amplifiers Lü □ a Copyrighted □ jr □ x: -J V Device No. 2N5086 ru -C By Its Respective ro ho TO-92 92 2NS087 TO-92 (92)

AD9661

Abstract: AD9660 20-PIN AD9560 AD9661A AD9661AKR AD9661AKR-REEL MPSH81 OP191 schematics of laser printers
Contextual Info: a Laser Diode Driver with Light Power Control AD9661A and fall times are 2 ns to complement printer applications that use image enhancing techniques such as pulse width modulation to achieve gray scale and resolution enhancement. Control signals are TTL/CMOS compatible.

MMBT5770

Abstract: KSC2223 KSC2756 KSC2757 KSC3123 KST10 KST5179 MMBT5179 MMBT918 MMBTH10
Contextual Info: Discrete Small Signal RF Products VCEO V VCBO (V) VEBO (V) IC fT hFE Max (A) (MHz) Min Max @VCE (V) Saturation Voltage @IC (mA) VCE (sat) (V) @IC (mA) @IB (mA) SOT-23 NPN Configuration KST5179 12 20 2.5 0.05 900 25 - 1 3 0.4 10 1 MMBT5179 12 20 2.5 0.05

PULSED LASER DIODE DRIVER

Abstract: Centronics connector dimension Laser Diode 10 pin PDF PIN PHOTO DIODE DESCRIPTION Centronics connector current rating AD9560 Centronics drivers computer power supply schematic circuit diagram diode all schematics of laser printers
Contextual Info: a Laser Diode Driver with Light Power Control AD9661A and fall times are 2 ns to complement printer applications that use image enhancing techniques such as pulse width modulation to achieve gray scale and resolution enhancement. Control signals are TTL/CMOS compatible.