BSR18A Search Results

Contextual Info: Transistors IC SMD Type Product specification BSR18A SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features +0.1 1.3-0.1 +0.1 2.4-0.1 Low current max. 100 mA . 0.4 3 1 0.55 Low voltage (max. 40 V). 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1

Contextual Info: BSR18A PNP General-Purpose Amplifier Description C This device is designed as a general-purpose amplifier for switching applications at collector currents of 10 A to 100 mA. Sourced from process 66. E SOT-23 Mark: T92 B Ordering Information Part Number Marking

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BSR18A SILICON LOW–POWER SWITCHING TRANSISTORS P–N–P silicon transistor Marking BSR18A = T92 PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm

Contextual Info: N AUER PHILIPS/DISCRETE bb53T31 OOlSTSb b ObE D BSR18 BSR18A J T -37- 5- SILICON LOW -POW ER SWITCHING TRANSISTORS P-N-P silicon transistor in a microminiature plastic envelope, intended for switching and linear applica­ tions in thick and thin-film circuits.

BP317

Abstract: BSR17A BSR18A
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BSR18A PNP switching transistor Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 May 28 Philips Semiconductors Product specification PNP switching transistor

1N916

Abstract: BSR18A marking code SOT SSs
Contextual Info: 711QÔBL« OQt.'ìS47 TÔT « P H I N BSR18A SILICON LOW-POWER SWITCHING TRANSISTORS P-N-P silicon transistor in a microminiature plastic envelope, intended for switching and linear applica­ tions in thick and thin-film circuits. QUICK REFERENCE D A TA Collector-base voltage {open emitter

BSR18A

Abstract: Marking T92 SOT-23 PIN
Contextual Info: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer SOT-23 Formed SMD Package BSR18A SILICON LOW–POWER SWITCHING TRANSISTORS P–N–P silicon transistor Marking BSR18A = T92 PACKAGE OUTLINE DETAILS

Contextual Info: SILICON LOW-POWER SWITCHING TRANSISTORS P-N -P Silicon transistor Marking BSR18A = T92 PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm 3.0 0.14 0.09 0.70 0.50 Pin configuration 1.4 1 = BASE 2 = EMITTER 3 = COLLECTOR 1.2 R0.1 Coö+T 0.12 0.02 /[< R 0 . 0 5 .002

728p

Abstract: Mark T92 BSR18A bel 187 view br49 4977 gm
Contextual Info: BSR18A BSR18A C E SOT-23 B Mark: T92 PNP General Purpose Amplifier This device is designed as a general purpose amplifier and switching applications at collector currents of 10 µA to 100 mA. Sourced from Process 66. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted

t92 surface mount t92 transistor

Abstract: BSR18A equivalent SMD TRANSISTOR MARKING ed BSR18A MARKING SMD pnp TRANSISTOR ec smd t92
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BSR18A SILICON LOW–POWER SWITCHING TRANSISTORS P–N–P silicon transistor Marking BSR18A = T92 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR

BSR18A

Abstract: BSR17A
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BSR18A PNP switching transistor Product specification Supersedes data of 1997 May 28 2004 Mar 24 Philips Semiconductors Product specification PNP switching transistor BSR18A FEATURES PINNING • Low current max. 100 mA

Contextual Info: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer SOT-23 Formed SMD Package BSR18A SILICON LOW–POWER SWITCHING TRANSISTORS P–N–P silicon transistor Marking

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BSR18A SILICON LOW–POWER SWITCHING TRANSISTORS P–N–P silicon transistor Marking BSR18A = T92 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR

728p

Abstract: Mark T92 BSR18A
Contextual Info: BSR18A BSR18A C E SOT-23 B Mark: T92 PNP General Purpose Amplifier This device is designed as a general purpose amplifier and switching applications at collector currents of 10 µA to 100 mA. Sourced from Process 66. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted

Contextual Info: • bbS3T31 0025561 Ifll H A P X N AHER PHILIPS/DISCRETE BSR18A b7E D SILICON LOW-POWER SWITCHING TRANSISTORS P-N-P silicon transistor in a microminiature plastic envelope, intended fo r switching and linear applica­ tions in thick and thin-film circuits.

BSR18A

Abstract: T92 marking
Contextual Info: BSR18A GDÎL SILICON LOW-POWER SWITCHING TRANSISTORS P-N -P silicon transistor M arking BSR18A = T92 P A C K A G E O U TLIN E D ETA ILS A LL D IM EN SIO N S IN m m J5.0_ 2.8 0.14 0.48 0.38 3 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 2.6 2.4 J.02

t54 sot-23

Abstract: BB5Z marx generator marking t54 1N916 BSR18A marx and generator
Contextual Info: • bbSBTBl N AUER D0255Û1 Ifll ■ APX PHILIPS/DISCRETE b7E BSR18A D SILICON LOW-POWER SWITCHING TRANSISTORS P-N-P silicon tra n sisto r in a m ic ro m in ia tu re plastic envelope, intended fo r sw itching and linear applica­ tio n s in th ic k and th in -film circu its.

BSR18R

Abstract: BSR18AR 1N916 BSR18 BSR18A BSP18
Contextual Info: “Ñ AMER PHILIPS/DISCRETE OhE D • bb53=l31 DDlSISt t BSR18 BSR18A T "- 3 7 - SILIC O N L O W -P O W E R S W IT C H IN G T R A N S IS T O R S * micromirli;l,llre ptasiic envelope, intended for sw itching and linear applfcations in thick and thin-film circuits.

Contextual Info: BSR18A L SILICON LOW-POWER SWITCHING TRANSISTORS P-N -P silicon transistor Marking BSR18A = T92 PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm 3.0 2.8 0.14 0.48 0.38 3 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 2.6 2.4 _L02 0.89 2.00 0.60 0.40 1.80

Contextual Info: BSR18A BSR18A C E SOT-23 B Mark: T92 PNP General Purpose Amplifier This device is designed as a general purpose amplifier and switching applications at collector currents of 10 µA to 100 mA. Sourced from Process 66. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted

BSR12

Abstract: PXTA14 ul sot-23 PMBT6427
Contextual Info: 97 Surface M ount Devices Switching Transistors cont. Ul LL Ratings Type Package v CEO v CBO V V min./max. at Iq /V c E *C mA m A /V v CE(sat) t (max) max. at lc /lB on/off at Iç /lg V mA/mA ns mA/mA Pinout See Section VII PNP PMBT3640 BSR12 BSR18 BSR18A

Marking T92 SOT

Abstract: MARKING SMD PNP TRANSISTOR BSR18A
Contextual Info: Transistors IC SMD Type PNP Switching Transistor BSR18A SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features +0.1 1.3-0.1 +0.1 2.4-0.1 Low current max. 100 mA . 0.4 3 1 0.55 Low voltage (max. 40 V). 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1

ir 728p

Abstract: 728p Mark T92 BSR18A
Contextual Info: Discrete POWER & Signal Technologies S e m i c o n d u c t o r “ BSR18A & -, . , national BSR18A Mark: T92 PNP General Purpose Amplifier This device is designed as a general purpose am plifier and switching applications at collector currents of 10 nA to 100 mA.

250MH

Contextual Info: BSR18A SILICON LOW-POWER SWITCHING TRANSISTORS P -N -P silicon transistor Marking BSR18A = T92 PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm _3.0_ 2.8 0.14 0.48 -^p05§ ÏT5B L 0.70 0.50 3 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 1.4 1.2 2.6 2.4