MMBT918 Search Results

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA VHF/UHF Transistor MMBT918LT1 NPN Silicon COLLECTOR 3 2 EMITTER MAXIMUM RATINGS Symbol Value Unit C ollector-Em itter Voltage VCEO 15 Vdc C ollector-B ase Voltage VCBO 30 Vdc E m itter-Base Voltage vebo 3.0 Vdc 'C 50 mAdc

Contextual Info: MMBT918 VHF/UHF NPN SILICON TRANSISTOR VOLTAGE 15 Volts POWER 225 mWatts FEATURES • NPN silicon • MECHANICAL DATA • Case: SOT-23, Plastic • Terminals: Solderable per MIL-STD-750, Method 2026 • Approx. Weight: 0.0084 grams • Marking: R1B ABSOLUTE RATINGS

Contextual Info: PN918 / MMBT918 MMBT918 PN918 C E C B TO-92 B SOT-23 E Mark: 3B NPN RF Transistor This device is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 43. Absolute Maximum Ratings*

marking R1B

Abstract: TRANSISTOR C 2026 transistor marking wn MMBT918
Contextual Info: MMBT918 VHF/UHF NPN SILICON TRANSISTOR VOLTAGE 15 Volts POWER 225 mWatts FEATURES • NPN silicon • In compliance with EU RoHS 2002/95/EC directives MECHANICAL DATA • Case: SOT-23, Plastic • Terminals: Solderable per MIL-STD-750, Method 2026 • Approx. Weight: 0.008 gram

Contextual Info: MMBT918W VHF/UHF NPN SILICON TRANSISTOR VOLTAGE 15 Volts POWER SOT-323 225 mWatts Unit: inch mm FEATURES .087(2.2) .070(1.8) .054(1.35) .045(1.15) MECHANICAL DATA .087(2.2) .078(2.0) • In compliance with EU RoHS 2002/95/EC directives .004(.10)MIN. • NPN silicon

NPN 200 VOLTS POWER TRANSISTOR

Abstract: MMBT918LT1
Contextual Info: ON Semiconductort VHF/UHF Transistor MMBT918LT1 NPN Silicon MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO 15 Vdc Collector–Base Voltage VCBO 30 Vdc Emitter–Base Voltage VEBO 3.0 Vdc IC 50 mAdc Symbol Max Unit PD 225 mW 1.8 mW/°C

Contextual Info: MMBT918 NPN Silicon VHF/UHF Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free SOT-23 Dim Min Max A 2.800 3.040 B 1.200 1.400 C 0.890 1.110 D 0.370 0.500 G 1.780 2.040 H 0.013 0.100 J 0.085 0.177 K 0.450

MMBT918LT1G

Contextual Info: MMBT918LT1G VHF/UHF Transistor NPN Silicon Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS http://onsemi.com Compliant COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO 15 Vdc Collector −Base Voltage

MMBT918LT1G

Abstract: MMBTA92LT3 MMBT918LT1 2m3b marking code 17 SOT-23
Contextual Info: MMBT918LT1 VHF/UHF Transistor NPN Silicon Features • Pb−Free Package May be Available. The G−Suffix Denotes a http://onsemi.com Pb−Free Lead Finish COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO 15 Vdc Collector −Base Voltage

Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# MMBT918 Features • • • Designed for VHF/UHF Amplifier applications. Marking : M3B Case Material:Molded Plastic. UL Flammability

PN918 transistor

Contextual Info: S E M IC O N D U Q T O H PN918 MMBT918 Mark: 3B NPN RF Transistor This device is designed for use as RF amplifiers, oscillators and m ultipliers with collector currents in the 1.0 m A to 30 m A range. Sourced from Process 43. Absolute Maximum RâtinÇjS Symbol

Contextual Info: ON Semiconductort VHF/UHF Transistor MMBT918LT1 NPN Silicon MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO 15 Vdc Collector–Base Voltage VCBO 30 Vdc Emitter–Base Voltage VEBO 3.0 Vdc IC 50 mAdc Symbol Max Unit PD 225 mW 1.8 mW/°C

Contextual Info: MMBT918W VHF/UHF NPN SILICON TRANSISTOR VOLTAGE 15 Volts POWER SOT-323 225 mWatts Unit: inch mm FEATURES • NPN silicon • MECHANICAL DATA • Case: SOT-323, Plastic • Terminals: Solderable per MIL-STD-750, Method 2026 • Approx. Weight: 5 mg • Marking: R1B

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA VHF/UHF Transistor MMBT918LT1 NPN Silicon COLLECTOR 3 1 BASE 3 2 EMITTER MAXIMUM RATINGS 1 2 Rating Symbol Value Unit Collector – Emitter Voltage VCEO 15 Vdc Collector – Base Voltage VCBO 30 Vdc Emitter – Base Voltage

PN918

Abstract: MMBT918 mark 3b RF TRANSISTOR SOT23 5 P431 PN918 transistor
Contextual Info: MMBT918 PN918 C E C B TO-92 SOT-23 E B Mark: 3B NPN RF Transistor This device is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 43. Absolute Maximum Ratings* Symbol

MMBT918

Contextual Info: i, Una. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 PN918 MMBT918 TO-92 SOT-23 Mark: 3B NPN RF Transistor This device is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the 1.0 mA to 30 mA range.

NPN RF Amplifier

Abstract: MMBT918 PN918
Contextual Info: B E M ir r N r j ç t t MMBT918 PN918 SOT-23 V B M a rk : 3 B NPN RF Transistor T his device is designed for use as RF amplifiers, oscillators and m ultipliers with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 43. Absolute Maximum Ratings*

MMBT918LT1

Abstract: MMBT918LT1G
Contextual Info: MMBT918LT1 VHF/UHF Transistor NPN Silicon Features • Pb−Free Package is Available http://onsemi.com MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO 15 Vdc Collector −Base Voltage VCBO 30 Vdc Emitter −Base Voltage VEBO 3.0

PN918

Abstract: 2n918 transistor SOT23 2N918 2n918 transistor PN918 transistor 2N918 National
Contextual Info: 2N918/PN918/MMBT918 National ISemiconductor PN918 2N918 MMBT918 7KXA hhJJ m /M U Cg TO-7 2 T0 72 TO “236 TO-9 2 SOT-23 T L /G /1 0 1 0 0 -5 C T L /G /1 0 1 0 0 -1 2 T L /G /1 0 1 0 0 -1 NPN RF Transistor Electrical Characteristics t a = 25°c unless otherwise noted

Contextual Info: MMBT918W VHF/UHF NPN SILICON TRANSISTOR VOLTAGE 15 Volts POWER SOT-323 225 mWatts Unit: inch mm • NPN silicon • /  0.087(2.20) 0.070(1.80) ‡*UHHQPROGLQJFRPSRXQGDVSHU,(&6WG +DORJHQ)UHH

Contextual Info: MCC
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# MMBT918 Features • • Designed for VHF/UHF Amplifier applications. Marking Code: MMBT918=M3B NPN VHF/UHF Transistors C Pin Configuration

microdot s-50

Abstract: MMBT918LT1 MMBT918LT1G
Contextual Info: MMBT918LT1 VHF/UHF Transistor NPN Silicon Features • Pb−Free Package is Available http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO 15 Vdc Collector −Base Voltage VCBO 30 Vdc Emitter −Base Voltage

O2 SOT-23

Abstract: MMBT918LT1 O2 MARKING
Contextual Info: LESHAN RADIO COMPANY, LTD. VHF / UFH Transistor NPN Silicon MMBT918LT1 3 COLLECTOR 3 1 BASE 1 2 2 EMITTER CASE 318–08, STYLE 6 MAXIMUM RATINGS Rating SOT–23 TO–236AB Symbol Value Unit Collector–Emitter Voltage V CEO 15 Vdc Collector–Base Voltage

y 331 Transistor

Contextual Info: PN918 / MMBT918 MMBT918 PN918 C C B E TO-92 B SOT-23 E Mark: 3B NPN RF Transistor This device is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 43. Absolute Maximum Ratings*