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    NDS352AP Search Results

    NDS352AP Datasheets (6)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    NDS352AP
    Fairchild Semiconductor P-Channel Logic Level Enhancement Mode Field Effect Transistor Original PDF 79.26KB 6
    NDS352AP
    Fairchild Semiconductor P-Channel Logic Level Enhancement Mode Field Effect Transistor Original PDF 84.18KB 7
    NDS352AP
    Toshiba Power MOSFETs Cross Reference Guide Original PDF 165.78KB 67
    NDS352AP
    Fairchild Semiconductor P-Channel Logic Level Enhancement Mode Field Effect Transistor Scan PDF 163.51KB 6
    NDS352AP
    National Semiconductor P-Channel Logic Level Enhancement Mode Field Effect Transistor Scan PDF 190.35KB 6
    NDS352AP_D87Z
    Fairchild Semiconductor Transistor Mosfet P-CH 30V 0.9A 3 pin SOT-23 T/R Original PDF 84.17KB 7
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    NDS352AP Price and Stock

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    onsemi NDS352AP

    Transistor: P-MOSFET; unipolar; -30V; -0.9A; 0.5W; SuperSOT-3
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    TME NDS352AP 2,809 1
    • 1 $0.59
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    Verical () NDS352AP 27,000 3,000
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    NDS352AP 9,000 3,000
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    NDS352AP 6,549 2,174
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    NDS352AP 3,000 2,174
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    NDS352AP 2,489 2,174
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    NDS352AP 1,973 45
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    Avnet Americas NDS352AP Tape & Reel 42,000 3,000
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    Mouser Electronics NDS352AP 45,441
    • 1 $0.75
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    Arrow Electronics () NDS352AP 27,000 24 Weeks 3,000
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    NDS352AP 6,000 24 Weeks 1
    • 1 $0.62
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    NDS352AP Cut Strips 1,973 24 Weeks 1
    • 1 $0.28
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    Newark () NDS352AP Tape & Reel 4,419 100
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    NDS352AP Cut Tape 4,419 1
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    NDS352AP Tape & Reel 3,000
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    NDS352AP Tape & Reel 3,000
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    NDS352AP Tape & Reel 3,000
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    NDS352AP Cut Tape 3,000
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    Future Electronics () NDS352AP Reel 81,000 24 Weeks 3,000
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    NDS352AP Reel 9 Weeks 6,000
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    NDS352AP Reel 9 Weeks 3,000
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    Onlinecomponents.com NDS352AP 11,500
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    Quest Components NDS352AP 4,332
    • 1 $1.00
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    Rochester Electronics NDS352AP 13,258 1
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    Ameya Holding Limited NDS352AP 2,240
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    Chip 1 Exchange NDS352AP 3,900
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    Avnet Asia NDS352AP 24 Weeks 9,000
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    Avnet Silica NDS352AP 17 Weeks 3,000
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    EBV Elektronik NDS352AP 18 Weeks 3,000
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    Master Electronics NDS352AP 11,500
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    Fairchild Semiconductor Corporation NDS352AP

    Trans MOSFET P-CH 30V 0.9A 3-Pin SOT-23 T/R
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    Bristol Electronics () NDS352AP 60,239
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    NDS352AP 18,988 1
    • 1 $0.69
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    • 100 $0.35
    • 1000 $0.14
    • 10000 $0.09
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    Quest Components () NDS352AP 11,591
    • 1 $0.91
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    • 10000 $0.16
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    NDS352AP 11,591
    • 1 $0.92
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    NDS352AP 5,154
    • 1 $0.91
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    • 10000 $0.16
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    NDS352AP 4,145
    • 1 $0.27
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    NDS352AP 3,815
    • 1 $0.53
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    NDS352AP 3,599
    • 1 $0.50
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    NDS352AP 3,552
    • 1 $0.65
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    • 100 $0.65
    • 1000 $0.26
    • 10000 $0.23
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    NDS352AP 2,842
    • 1 $0.91
    • 10 $0.91
    • 100 $0.91
    • 1000 $0.27
    • 10000 $0.18
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    NDS352AP 2,400
    • 1 $0.65
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    NDS352AP 2,304
    • 1 $0.83
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    • 100 $0.25
    • 1000 $0.17
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    NDS352AP 1,580
    • 1 $0.91
    • 10 $0.91
    • 100 $0.27
    • 1000 $0.18
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    NDS352AP 868
    • 1 $0.91
    • 10 $0.91
    • 100 $0.41
    • 1000 $0.27
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    ComSIT USA NDS352AP 1,020
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    Chip 1 Exchange NDS352AP 150
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    National Semiconductor Corporation NDS352AP

    Trans MOSFET P-CH 30V 0.9A 3-Pin SOT-23 T/R
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    Bristol Electronics NDS352AP 2,648
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    Quest Components NDS352AP 4,000
    • 1 $0.91
    • 10 $0.91
    • 100 $0.91
    • 1000 $0.27
    • 10000 $0.18
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    Freescale Semiconductor NDS352AP

    900 MA, 30 V, P-CHANNEL, SI, SMALL SIGNAL, MOSFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components NDS352AP 1,506
    • 1 $0.50
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    Others NDS352AP

    INSTOCK
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    Chip 1 Exchange NDS352AP 6,040
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    NDS352AP Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    NDS352AP

    Abstract: supersot-3
    Contextual Info: February 1997 FAIRCHILD Ml C O N D U C T O R i NDS352AP P-Channel Logic Level Enhancement Mode Field Effect Transistor Features G eneral D escription These P -Channel logic level enhancement mode power field effect transistors are produced using Fairchild’s proprietary,


    OCR Scan
    nds352apsupersot-3 PDF

    Contextual Info: February 1997 M l G C IN D U C T O R NDS352AP P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These P -Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary,


    OCR Scan
    nds352ap PDF

    nds352ap g

    Abstract: NDS352AP
    Contextual Info: N July 1996 NDS352AP P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These P-Channel logic level enhancement mode power field effect transistors are produced using Nationals proprietary, high cell density, DMOS technology. This very high density process is


    Original
    nds352apnds352ap g PDF

    NDS352AP

    Contextual Info: February 1997 NDS352AP P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These P -Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density


    Original
    nds352ap PDF

    Contextual Info: February 1997 NDS352AP P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These P -Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density


    Original
    nds352ap PDF

    Contextual Info: July 19 96 N ational Semiconductor" NDS352AP P-Channel Logic Level Enhancement Mode Field Effect Transistor G e n e ra l D e s c rip tio n F e a tu re s These P-Channel logic level enhancement mode power field effect transistors are produced using Nationals proprietary, high cell density, DMOS


    OCR Scan
    PDF

    NDS352AP

    Abstract: nds352
    Contextual Info: N July 1996 NDS352AP P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These P-Channel logic level enhancement mode power field effect transistors are produced using Nationals proprietary, high cell density, DMOS technology. This very high density process


    Original
    nds352apnds352 PDF

    Contextual Info: FAIRCHILD SEM IC ONDUCTO R February 1997 tm NDS352AP P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These P -Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary,


    OCR Scan
    nds352ap PDF

    NDS352AP

    Contextual Info: February 1997 NDS352AP P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These P -Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density


    Original
    nds352ap PDF

    Contextual Info: ISL6256, ISL6256A Data Sheet June 1, 2007 Highly Integrated Battery Charger with Automatic Power Source Selector for Notebook Computers Features • ±0.5% Charge Voltage Accuracy -10°C to +100°C The ISL6256, ISL6256A is a highly integrated battery charger


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    isl6256isl6256afn6499 PDF

    ISL6251AHAZ

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    Contextual Info: ISL6251EVAL2Z Evaluation Board Setup Procedure Application Note Low Cost Multi-Chemistry Battery Charger Controller • ±0.5% Charge Voltage Accuracy -10°C to +100°C The constant output voltage can be selected for 2, 3 and 4 series Li-Ion cells with 0.5% accuracy over-temperature. It


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    ac power adapter for notebook schematic

    Abstract: 6255HRZ ISL6255AHRZ 6255HAZ SMD diode MARKING 8P DIODE smd marking R12 ISL AHAZ power adapter for notebook schematic 0.125w resistor 1/8 ISL6255
    Contextual Info: ISL6255EVAL1Z Evaluation Board Setup Procedure April 10, 2007 Application Note AN1296.0 General Description Features The ISL625xEVAL1B EV kit includes all the circuitry needed to demonstrate the capabilities of the ISL6255 Lithium-Ion battery-charger with integrated AC adapter current limit. The


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    ac power adapter for notebook schematic

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    Contextual Info: ISL6256AEVAL1Z Evaluation Board Setup Procedure Application Note October 26, 2007 AN1363.0 Low Cost Multi-Chemistry Battery Charger Controller Features The ISL6256, ISL6256A is a highly integrated battery charger controller for Li-ion/Li-ion polymer batteries. High Efficiency is


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    sis 962l

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    Contextual Info: 5 4 3 2 1 Power Now Clock Gen. PAGE 5 AMD Mobile Duron CPU RTC,VCC3,VCC5 PAGE 10 Sideband Bus SYSTEM POWER PAGE 22 PAGE 38 Thermal D D PAGE 2,3,4 Clock Buffer CHARGER &SELECTOR PAGE 11 PAGE 34 S2K Bus CRT North Bridge PAGE 15 BAT.LOW&OVER.T Memory Bus SiS 740


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    Contextual Info: A B C D E 1 1 Compal Confidential 2 2 DCL51 Schematics Document Banias uFCBGA/uFCPGA Package with Montara-GM Core Logic 2003-06-12 3 3 REV: 1.0 4 4 Compal Electronics, Inc. Title SCHEMATIC M/B LA-1881 THIS SHEET OF ENGINEERING DRAWING IS THE PROPRIETARY PROPERTY OF COMPAL ELECTRONICS, INC. AND CONTAINS CONFIDENTIAL


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    Contextual Info: Preface Notebook Computer M660SU/M665SU Service Manual Preface I Preface Notice The company reserves the right to revise this publication or to change its contents without notice. Information contained herein is for reference only and does not constitute a commitment on the part of the manufacturer or any subsequent vendor. They assume no responsibility or liability for any errors or inaccuracies that may appear in this publication nor are


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    Abstract: TRANSISTOR SMD nc46 ECQ60 ISL6248ACR CL51 pentium BCM5788 LA-2271 SMD transistor k23 TRANSISTOR SMD K27 Socket AM2
    Contextual Info: A B C D E 1 1 Compal Confidential 2 2 ECQ60 Schematics Document Desktop LGA-775 Package with Grantsdale + ICH6 + ATI M24-P 2004-08-09-C 3 3 REV: 1.0 4 4 Compal Electronics, Inc. Title Cover Sheet THIS SHEET OF ENGINEERING DRAWING IS THE PROPRIETARY PROPERTY OF COMPAL ELECTRONICS, INC. AND CONTAINS CONFIDENTIAL


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    Contextual Info: 5 4 3 557 V.3.0 2 Clock Gen. Pentium-M CPU RTC,VCC3,VCC5 PAGE 9 Sideband Bus PAGE 2,3 PAGE 10 North Bridge PAGE 13 Memory Bus SiS M661GX LVDS PAGE 36 D CHARGER &SELECTOR Clock Buffer CRT VCCP RT9202 PAGE 20 Thermal D BAT.LOW PAGE 32 PAGE 37 MAX1902 3.3V/5VAUX


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    LPC47N227 IO CHIP

    Abstract: MONTARA-GT foxconn RTL8101L LA-1931 Compal Electronics smd transistor hl6 hp desktop pc schematic isl6247 g25 SMD Transistor
    Contextual Info: A B C D E COMPAL CONFIDENTIAL 1 MODEL NAME : DBL10 - Sapporo X COMPAL P/N : DA8BL10L000 PCB NO : LA-1931 Revision : 0.2 1 DBL10 - Sapporo X Schematics Document 2 2 uFCBGA/uFCPGA NorthWood MT 2003-06-09 0.2 Gerber Out Version 3 3 4 4 Compal Electronics, Inc.


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