NPN RF Amplifier
Abstract: y-parameter MMBTH20 MPSH20 U407
Contextual Info: MMBTH20 Discrete POW ER & Signal Technologies National S e m i c o n d u c t o r “ MMBTH20 MPSH20 NPN RF Transistor T h is d e v ic e is d e s ig n e d for g e n e ra l R F am plifier a n d m ixer ap p lica tio n s to 25 0 M H z w ith co lle cto r curren ts in the 1.0 m A
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Contextual Info: MPSH20/MMBTH20 W A National Jim Semiconductor MPSH20 MMBTH20 Ih r ¡J TO- 236 SOT-23 TO-92 TL/G/10100-5 TL/G/10100-3 NPN RF Transistor Electrical Characteristics ta =25°c unless otherwise noted Parameter Symbol Min Typ Max Units O FF CH ARACTERISTICS V (BR)CEO
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mpsh20/mmbth20mpsh20mmbth20ot-23+3tl/g/10100-5tl/g/10100-3100/nadc
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MPS-H20
Abstract: npn, transistor, sc 107 b MV400 3 w RF POWER TRANSISTOR NPN
Contextual Info: MPSH20 / MMBTH20 MPSH20 MMBTH20 C C B E TO-92 B SOT-23 E Mark: 3L NPN RF Transistor This device is designed for general RF amplifier and mixer applications to 250 MHz with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 49. Absolute Maximum Ratings*
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mpsh20mmbth20ot-23mps-h20+3npn, transistor, sc 107 bmv4003 w rf power transistor npn
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CBVK741B019
Abstract: F63TNR MMBTH20 MPSH20 PN2222N Q100 transistor mark code t1 Ohmite RF Z-235 MPS-H20
Contextual Info: MPSH20 / MMBTH20 MPSH20 MMBTH20 C E C B TO-92 E B SOT-23 Mark: 3L NPN RF Transistor This device is designed for general RF amplifier and mixer applications to 250 MHz with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 49. Absolute Maximum Ratings*
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mpsh20mmbth20ot-23cbvk741b019+7f63tnrpn2222nq100transistor mark code t1ohmite rfz-235mps-h20
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Contextual Info: MMBTH20 Transistors Si NPN LP HF BJT Military/High-RelN V BR CEO (V)30è V(BR)CBO (V)40 I(C) Max. (A)100m Absolute Max. Power Diss. (W)350m Maximum Operating Temp (øC)135þ I(CBO) Max. (A)50n @V(CBO) (V) (Test Condition) h(FE) Min. Current gain. h(FE) Max. Current gain.
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MPSH20
Abstract: MMBTH20 Q100 500 uf 50v npn, transistor, sc 107 b
Contextual Info: MPSH20 / MMBTH20 MPSH20 MMBTH20 C E C B TO-92 E B SOT-23 Mark: 3L NPN RF Transistor This device is designed for general RF amplifier and mixer applications to 250 MHz with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 49. Absolute Maximum Ratings*
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mpsh20mmbth20ot-23q100+2500 uf 50vnpn, transistor, sc 107 b
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PNP 3-224
Abstract: NPN Transistor PN100A 2N3906 Darlington transistor 2n3904 TRANSISTOR PNP PNP 2N3904 TRANSISTOR 3182 2N3906 NPN Transistor PNP switching transistor 2N3906 transistor 338 TN6715A
Contextual Info: Section 3 Bipolar Transistors PN100 / PN100A / MMBT100 / MMBT100A NPN GPA . 3-4 PN200 / PN200A / MMBT200 / MMBT200A PNP GPA . 3-7 FPN330 / FPN330A NPN Low Saturation Transistor . 3-11
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pn100pn100ammbt100mmbt100a+16pn200pn200ammbt200mmbt200afpn330fpn330apnp 3-224npn transistor pn100a2n3906 darlington transistor2n3904 transistor pnppnp 2n3904transistor 31822n3906 npn transistorpnp switching transistor 2n3906transistor 338tn6715a
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8F SOT-23 PNP on
Abstract: 1n4148 5D mark FDH777 mark fq sot 8F SOT23 PNP SOT-23 Mark ZF 1N4148 surface mount NDSJ105 5d surface mount diode BV 9y transistor
Contextual Info: Discrete POWER & Signal Technologies Surface Mount Diodes Computer Diodes by Descending BV LEADLESS GLASS PACKAGE Device No. Package No. BV (V) Min IR (nA) Max @ VR VF (V) (V) Min C trr (mA) (pF) Max (ns) Max 1 10 4 0.72 5 @ Max IF Test Conditions Process
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fdll914ll-34fdll914afdll914b+12fdll916fdll916a8f sot-23 pnp on1n4148 5d markfdh777mark fq sot8f sot23 pnpsot-23 mark zf1n4148 surface mountndsj1055d surface mount diodebv 9y transistor
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bf223
Abstract: PE210C BF311 PE210B 2SC1293 bfy88 BF330 nec RF package SOT89 2SC1260 BF497
Contextual Info: RF LOW-POWER SILICON NPN Item Number Part Number V BR CEO BSW43 BSW43 BSW43 BSX52 MMBT4124 MMBT4124 MMBT4124 KT379B ZTX114 2SC137 -5 10 ~~~~ 2SD1581M 2SD1581L JE9143A 2SD1581K JE9143B JE9143 JE9143C 2N5188 -15 20 ~~~~~D BSY58 BF374 BF375C 2SC1293 2SC1293 2SC1293
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bsw43bsx52mmbt41o-xo-92var+14o-23so-10so-20smo-23svarbf223pe210cbf311pe210b2sc1293bfy88bf330nec rf package sot892sc1260bf497
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1N4548
Abstract: 1N4008 Diode 1N4008 1N4008 diode 1N1744A 1n4148 1N523b 2N4418 BAX15 1n5428
Contextual Info: Discrete POWER & Signal Technologies Diode Cross-Reference Guide Industry Part Number 1N100 1N100A 1N101 1N102 1N103 1N104 1N108 1N111 1N112 1N113 1N114 1N115 1N116 1N116A 1N117 1N1170 1N117A 1N118 1N118A 1N119 1N120 1N126 1N126A 1N127 1N127A 1N128 1N128A
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1n1001n100a1n1011n102+161n1031n1041n1081n1111n1121n1131n45481n4008diode 1n40081n4008 diode1n1744a1n41481n523b2n4418bax151n5428
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J31C
Abstract: MMBTH30 MMBT6543
Contextual Info: NATL Surface Mount Transistors RF Amplifiers and Oscillator»— NPN Type No. Case Style "A *“ CB0 V cr Max 11 & hre @ iC Vce Min Max (mA) (V) 2.5 20 15 25 MMBTH10 TO-236 (49) 30 25 3 100 25 MMBT918 TO-236 (49) 30 15 3 10 MMBT3563 TO-236 (49) 30 15 2
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MMBTH11
Abstract: MMBTH24 MMBT5179 MMBT918 MMBTH10 MMBTH20 MMBTH34
Contextual Info: This Surface Mount Transistors Material IT a fc-> In b-> ÜÜ □ Surface Mount Transistors NPN RF Amplifiers and Oscillators Case Style ^CBO V CEO ^ EB O V (V) (V) Min Min Min *CBO V <nA)@ “ Max 'v' h FE @ ‘c & .- . Device No. (SOT-23 Mark) ^ JJ
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ot-23mmbt5179o-236mmbth10+6mmbt918mmbth11650mammbth24mmbth20mmbth34
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MRF472
Abstract: MRF245 MRF243 MPSA13K MPS6579 MRF420 BF497 MRF304 MRF250 PE210B
Contextual Info: RF LOW-POWER SILICON NPN Item Number Part Number V BR CEO BSW43 BSW43 BSW43 BSX52 MMBT4124 MMBT4124 MMBT4124 KT379B ZTX114 2SC137 -5 10 ~~~~ 2SD1581M 2SD1581L JE9143A 2SD1581K JE9143B JE9143 JE9143C 2N5188 -15 20 ~~~~~D BSY58 BF374 BF375C 2SC1293 2SC1293 2SC1293
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bsw43bsx52mmbt41ranmrf472+9mrf245mrf243mpsa13kmps6579mrf420bf497mrf304mrf250pe210b
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