MMBTH34 Search Results

MMBTH34

Abstract: fet sot23-3
Contextual Info: . O ctob e r 1985 MMBTH34 Surface Mount NPN RF-IF Amp General Description This device w as designed fo r com m on-em itter low noise am plifier and m ixer applications in th e 100 jj-A to 15 m A range to 300 MHz, and low frequency drift com m on-base VHF oscillato r applications w ith high output levels fo r driving

Contextual Info: October 1985 MMBTH34 Surface Mount NPN RF-IF Amp General Description This device was designed for common-emitter low noise amplifier and mixer applications in the 100 p-A to 15 mA range to 300 MHz, and low frequency drift common-base VHF oscillator applications with high output levels for driving

MMBTH34

Abstract: MPSH11
Contextual Info: MMBTH34 MMBTH34 NPN General Purpose Amplifier • This device is designed for common-emitter low noise amplifier and mixer applications with collector currents in the 100mA to 20mA range to 300MHz, and low frequency drift common-base VHF oscillator applications with high output levels for driving FET mixers.

C1995

Abstract: national semiconductor marking RRD-B30M115 IE A150 MMBTH34 ICE20 IC Marking M03 8548
Contextual Info: MMBTH34 Surface Mount NPN RF-IF Amp General Description This device was designed for common-emitter low noise amplifier and mixer applications in the 100 mA to 15 mA range to 300 MHz and low frequency drift common-base VHF oscillator applications with high output levels for driving

MMBT5770

Abstract: KSC2223 KSC2756 KSC2757 KSC3123 KST10 KST5179 MMBT5179 MMBT918 MMBTH10
Contextual Info: Discrete Small Signal RF Products VCEO V VCBO (V) VEBO (V) IC fT hFE Max (A) (MHz) Min Max @VCE (V) Saturation Voltage @IC (mA) VCE (sat) (V) @IC (mA) @IB (mA) SOT-23 NPN Configuration KST5179 12 20 2.5 0.05 900 25 - 1 3 0.4 10 1 MMBT5179 12 20 2.5 0.05

8F SOT-23 PNP on

Abstract: 1n4148 5D mark FDH777 mark fq sot 8F SOT23 PNP SOT-23 Mark ZF 1N4148 surface mount NDSJ105 5d surface mount diode BV 9y transistor
Contextual Info: Discrete POWER & Signal Technologies Surface Mount Diodes Computer Diodes by Descending BV LEADLESS GLASS PACKAGE Device No. Package No. BV (V) Min IR (nA) Max @ VR VF (V) (V) Min C trr (mA) (pF) Max (ns) Max 1 10 4 0.72 5 @ Max IF Test Conditions Process

TO236

Abstract: MMBTH30 to-236
Contextual Info: NATL National æ m ISemiconductor Surface Mount Transistors SEMICOND RF Amplifiers and Oscillators— NPN Type No. Case Style v CEO V ebo V (V) Min Min CBO Vcb (" A ) Max ' ' 8 1^4 Vce f>FE Min Max (mA) (V) 12 2.5 20 15 25 MMBTH10 TO-236 (49) 30 25

Contextual Info: _ _ _ . böt T > U t.SD113D 0 0 3 1 5 2 8 ISA « N S C S RF Amplifiers Devices NPN PNP NATL SEnlC0N] discrete) h fE V CE0(Sutt) »C (Volts) Min (mA) Max Min Iq ^ c e mA (MHZ) Min C#|, PF Max *T V NF (dB) @ f Package Max MHz 2N3663 12 50 20 8.0 10 700

thermistor KSD201

Abstract: IRF power mosfets catalog Complementary MOSFETs buz11 BZX85C6V8 SPICE MODEL Diode 1N4001 50V 1.0A DO-41 Rectifier Diode K*D1691 make SMPS inverter welding machine transistor KSP44 1N5402 spice model tip122 tip127 mosfet audio amp
Contextual Info: Fairchild Semiconductor Product Catalog 2004 Microcontrollers Optoelectronics Across the board. Around the world. Analog Discrete Interface & Logic Interface & Logic Discrete Power Optoelectronics Analog & Mixed Signal Fairchild Semiconductor, The Power Franchise™

PN3563

Abstract: MPSH24 2N3663 2N5179 2N5770 2N918 BF199 MMBT5179 MMBT918 MPS5179
Contextual Info: _ _ - . tat B RF Amplifiers Devices V CE0{Sint h hFE @ Iq Vjj Volts) Min (mA) Max 2N3663 12 50 20 8.0 2N5179 12 50 25 3.0 NPH PNP Min mA • t.SD113G 0 0 3 ^ 5 2 0 ISA ■ NSCS NATL SEnlC0N]> (discrete) *T C#|, NF (dB) @ f (MHZ) Min PF Max Max 10 700

FQPF*7N65C APPLICATIONS

Abstract: bc548 spice model bf494 spice model spice model bf199 LM3171 BC517 spice model bc547 spice model BF494 spice MOC3043-M spice model SPICE model BC237
Contextual Info: Fairchild PSG.book Page i Wednesday, July 28, 2004 11:12 AM Fairchild Semiconductor Product Catalog Rev. 1 Analog & Mixed Signal Discrete Power Interface & Logic Microcontrollers Optoelectronics RF Power Front Matter.fm Page ii Monday, August 2, 2004 10:09 AM

SSP35n03

Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
Contextual Info: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A

ss8050 d 331

Abstract: tip122 tip127 mosfet audio amp KSD180 KA1M0880 application note SS8550 D 331 dual cc BAW62 KA2S0680 ss8550 sot-23 MPSA92(KSP92) equivalent DIODE 1N4148 LL-34
Contextual Info: Power Products S e l e c t i o n G u i d e September, 1999 Power Products Table of Contents Alphanumeric Listing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2

transistor 2N5952

Abstract: transistor KSP44 bc558 zener diode reference guide 1n967b schottky 1n5248 KBL BRIDGE RECTIFIER 005 FYPF2004DN BAV99Wt1g BC337
Contextual Info: Small Signal Transistors & Diodes Selection Guide Fairchild Semiconductor, a long-time, leading global supplier of high performance semiconductors, offers a broad range of small signal transistor and diode products—from JFETs, Schottky, and rectifiers, to RF transistors, TRIACs and more. You will not only find the performance that you want, you will also

thermistor KSD201

Abstract: pin configuration NPN transistor BC548 pin configuration transistor BC547 smd packaging FQPF*7N65C APPLICATIONS BC547 sot package sot-23 pin configuration pnp smd transistor BC557 DIODE 1N4148 LL-34 pin configuration NPN transistor BC547 BC557 sot-23 BC547 smd
Contextual Info: Fairchild PSG.book Page i Wednesday, July 28, 2004 11:12 AM Fairchild Semiconductor Product Catalog Rev. 1 Analog & Mixed Signal Discrete Power Interface & Logic Microcontrollers Optoelectronics RF Power Front Matter.fm Page ii Monday, August 2, 2004 10:09 AM

1N4548

Abstract: 1N4008 Diode 1N4008 1N4008 diode 1N1744A 1n4148 1N523b 2N4418 BAX15 1n5428
Contextual Info: Discrete POWER & Signal Technologies Diode Cross-Reference Guide Industry Part Number 1N100 1N100A 1N101 1N102 1N103 1N104 1N108 1N111 1N112 1N113 1N114 1N115 1N116 1N116A 1N117 1N1170 1N117A 1N118 1N118A 1N119 1N120 1N126 1N126A 1N127 1N127A 1N128 1N128A

J31C

Abstract: MMBTH30 MMBT6543
Contextual Info: NATL Surface Mount Transistors RF Amplifiers and Oscillator»— NPN Type No. Case Style "A *“ CB0 V cr Max 11 & hre @ iC Vce Min Max (mA) (V) 2.5 20 15 25 MMBTH10 TO-236 (49) 30 25 3 100 25 MMBT918 TO-236 (49) 30 15 3 10 MMBT3563 TO-236 (49) 30 15 2

MMBTH11

Abstract: MMBTH24 MMBT5179 MMBT918 MMBTH10 MMBTH20 MMBTH34
Contextual Info: This Surface Mount Transistors Material IT a fc-> In b-> ÜÜ □ Surface Mount Transistors NPN RF Amplifiers and Oscillators Case Style ^CBO V CEO ^ EB O V (V) (V) Min Min Min *CBO V <nA)@ “ Max 'v' h FE @ ‘c & .- . Device No. (SOT-23 Mark) ^ JJ

TRANSISTORS BJT bc548

Abstract: jfet selection guide J210 D2 PAK PN4302 TN2102A BJT BC546 FJN965 MPF102 JFET data sheet KSP13 ks3302
Contextual Info: Small Signal Transistor and JFET Selection Guide Small Signal Transistor and JFET Selection Guide Analog Discrete Interface & Logic Optoelectronics August 2002 Across the board. Around the world. Small Signal Transistor and JFET Selection Guide August 2002

S 9018 to-92

Abstract: C1674K SC1674 C2786 2sc 3138 2369A to-92
Contextual Info: NPN High Speed Saturated Switches Device No. [Mark] Case Style PN5134 VCEO V Min VCES* V VCBO EBO (V) (V) Min Min ICBO VCB (nA) @ (V) Max I V hFE @ C & CE Min Max (mA) (V) 10 20* 3.5 100 15 20 15 B SV52 [B 2] TO-236 (49) 12 20 5.0 100 10 25 40 25 MMBT2369 [1J]

MMBD1502A

Abstract: MMBF102 MMBFJ270 MMBD1502 MMBD1702A MMBD4448 mps 1132 MMBFJ304 splicing 9G49
Contextual Info: Date Created: 1/28/2004 Date Issued: 2/16/2004 PCN # 20040410 DESIGN/PROCESS CHANGE NOTIFICATION - FINAL This is to inform you that a design and/or process change will be made to the following product s . This notification is for your information and concurrence.