PN3568 Search Results

2A 5A10

Abstract: NSD106 NSD104 NSD6178 TO-202 transistor NPN 2N4239 2N5321 D40D10 D40D11 D40D13
Contextual Info: NATL SEMICÔND DISCRETE 2SE D- • bSG113Q GQ377âS 1 ■ 7"^/ NPN Medium Power Transistors by Ascending Vceo (Continued) H fe @ lc /V Ce Vce (sat) (V) ’ Vceo (V) Min Max (mA/V) NSE181 PN3568 TN2017 60 60 60 50 40 50 250 120 200 10/1 150/1 200/10 0.9 0.25

PN3568

Abstract: Q32J ic100na
Contextual Info: V- :f.¡>O PN3568 is NPN silicon planar epitaxial transistor PN3568 NPN SILICON TRANSISTOR TO-92 designed for amplifier and switching applications for collector current up to 500mA. ABSOLUTE MAXIMUM RATINGS EBC Collector-Base Voltage vCB0 Collector-Emitter Voltage

PN3568

Contextual Info: SEMiCONDUCTQR PN3568 NPN General Purpose Amplifier This device is designed for general purpose, medium power amplifiers and switches requiring collector currents to 500 mA. Sourced from Process 12. SeeTN3019A for characteristics. Absolute Màximum RdtÌflC|S

mpsa06 539

Contextual Info: ¿2h STtiGhGG O E T ia ^ I NPN Transistors a Discrete POWER & Signal Technologies National NPN Medium Power ¡'«icond.cor- V Device No. Case Style PN3568 TO-92 92 TN3019A TO-226 (99) MPS80S CBO VCEO V EBO (V) Min (V) Min (V) Min 80 60 5 140 80 7 <nA)@ "

PN3568

Abstract: CBVK741B019 F63TNR PN2222N
Contextual Info: PN3568 C TO-92 BE NPN General Purpose Amplifier This device is designed for general purpose, medium power amplifiers and switches requiring collector currents to 500 mA. Sourced from Process 12. SeeTN3019A for characteristics. Absolute Maximum Ratings* Symbol

pn3568

Contextual Info: S E M IC O N D U C T O R PN3568 NPN General Purpose Amplifier T his device is designed for general purpose, m edium power am plifiers and switches requiring collector currents to 500 mA. Sourced from Process 12. SeeTN3019A for characteristics. AbSOlUtG Maximum RâtinÇjS

2N3569

Abstract: 2N3568 2N3567 transistor 2N3569 "NPN Transistors" 2n3567 World transistors and ic 2N3568 DATASHEET 2n3569 to-105 PN3567 PN3569
Contextual Info: Datasheet Central 2N3567 2N3568 2N3569 PN3567 PN3568 PN3569 JEDEC T0-105 JEDEC TO- 9 2 EBC Sem iconductor Corp. 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824 Manufacturers of World Class Discrete Semiconductors SILICON NPN TRANSISTORS

PN3568

Contextual Info: PN3568 PN3568 NPN General Purpose Amplifier • This device is designed for general purpose, medium power amplifiers and switches requiring collector currents to 500mA. TO-92 1 1. Emitter 2. Base 3. Collector Absolute Maximum Ratings* TA=25°C unless otherwise noted

Contextual Info: WA PN3568 NPN SILICON TRANSISTOR PN3568 is NPN silicon planar epitaxial transistor TO-92 designed for amplifier and switching applications for collector current up to 500mA. ABSOLUTE MAXIMUM RATINGS EBC Collector-Base Voltage vCB0 Collector-Emitter Voltage

Contextual Info: SEMICONDUCTOR . PN3568 NPN General Purpose Amplifier This device is designed for general purpose, medium power amplifiers and switches requiring collector currents to 500 mA. Sourced from Process 12. SeeTN3019A for characteristics. Absolute Maximum RatinQS

2N6591

Contextual Info: NATL SEMICÔND DISCRETE 2SE ». • bSG1130 G0377Ô5 1 ■ NPN Medium Power Transistors by Ascending Vceo (V) Min NSE181 PN3568 TN2017 60 60 60 50 40 50 250 120 200 TN2102 65 40 2N5321 D40D10 D40D11 D40D13 D40D14 NSD6178 75 75 75 75 75 75 40 50 120 50 120

Contextual Info: PN3568 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)60 V(BR)CBO (V)80 I(C) Max. (A)500m Absolute Max. Power Diss. (W)600m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)50nØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

PN3568

Contextual Info: PN3568 NPN SILICON TRANSISTOR PN3568 is NPN silicon planar epitaxial transistor designed for amplifier and switching applications for collector current up to 500mA. TO-92 I ABSOLUTE MAXIMUM RATINGS Collector-Base Voltage Collector-Emitter Voltage vCE0 Emitter-Base Voltage

PN3568

Contextual Info: PN3568 C TO-92 BE NPN General Purpose Amplifier This device is designed for general purpose, medium power amplifiers and switches requiring collector currents to 500 mA. Sourced from Process 12. SeeTN3019A for characteristics. Absolute Maximum Ratings* Symbol

transistor BC287

Abstract: BC286 BC287 2N2907A fairchild 2n3568 BC527-25 BC537 BC537-16 SE6020 bc142 transistor
Contextual Info: FAIRCHILD TRANSISTORS SMALL SIGNAL GENERAL PURPOSE AMPLIFIER AND SWITCHING TRANSISTORS BY ASCENDING VcEO (Cont’d) (ALSO SEE LOW LEVEL AND HIGH VOLTAGE SECTION) Item 1 DEVIC E NO. Pole rlty NPN PNP BC141-6 ^FE @ ic v CEO (V c e r ) (hfe) V mA Min/Max Min

TO92A

Abstract: TO-92a MPS4355 MPS6591 MPSD05 MPS9647 MPS9468 MPS3702 MPS3703 MPS3705
Contextual Info: T Y PE NO. P O L A R IT Y Medium Power Amplifiers and Switches M A X IM U M R A T IN G S CASE P d ImtVI •c A H FE V C E (S A T ) V CEO (V ) min m ax 'c (m A) V CE (V) max f T min Cob COM PLE­ max M ENTARY (MHz) (pF) TYPE 0.05 0.05 0.1 0.1 0.1 100 100

NPN 2907A EBC

Abstract: 2907A EBC 2222a pn
Contextual Info: small Signal Transistors TO-92 Case Continued TO-92 T Y P E MO, F A M IL Y LEA D CODE VC B O v CEO v EBO (V) 00 MW *^ C 6 S U ftf MU'! IliN ipstf* *e s 8 "fe w m * WS; •CBO s* V C BC - m • V c s *» c W (V ) MN ' - m (*A ) v C E fS A K > « * C 00 (« A )

MPS6591

Abstract: MPS-8000 mps9418 MPS4355
Contextual Info: Medium Power Amplifiers and Switches TYPE NO. PO LA ­ CASE RITY M A X IM U M RA TING S VcEO Pd Ic ^CER * mW (V) (A) H FE VcE(sat) min max Ic V ce max Ic (mA) (V) (V) (A) fr Cob min max (M H z) (M H z) C O M PL E ­ M EN TAR Y TYPE MPS4354 MPS4355 MPS4356

MPS9468

Abstract: MPS948 MPS9418 TO92A mps434 2n150
Contextual Info: Medium Power Amplifiers and Switches MAXIMUM RATINGS TYPE NO. POLA­ RITY CASE MPS6591 MPS8000 MPS9416 MPS9416A MPS9417 N N N N N MPS9417A MPS9418 MPS9434 MPS9466 MPS9466A H,'E VcEinft lc COMPLE­ C* fj mm mas MENTARY MHz (MHz) TYPE Pd Ic v CE0 (mW) (A)

MPSD05

Abstract: MPSA05 MPSA06 MPSA55 MPSA56 MPSD55 MSB492 PN2221 PN2221A PN2906
Contextual Info: Medium Power Amplifiers and Switches TYPE POLA­ NO. RITY MPSA05 MPSA06 MPSA55 MPSA56 MPSD05 N N P P N MAXIMUM RATINGS CASE TO-92A TO-92A TO-92A TO-92A TO-92A Pd IC VCEO mW (A) (V) 625 625 625 625 350 0.5 0.5 0.5 0.5 0.5 60 80 60 80 25 HFE min 50 50 50 50

TRIAC 97A6

Abstract: S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C
Contextual Info: Central Semiconductor Corp. Represented iSIGNTBOHICS B y: TORONTO I Regan Road, Unit 13, Bram pton, O ntario L7A 1B8 Tel: 905-846-1100 Fax:905-846-7116 E -m a il: d e s ig n tr< a id ire c t.c o m OTTAW A 21 Pine Bluff Trail, Stittsville, O ntario K2S 1E1

Contextual Info: Small Signal General Purpose Transistors Part No. BF370 2N2712 2N2714 BC368 BF254 BF494 BF495 BF496 BF959 2N2924 2N3392 2N3415 2N5172 BC338-16 BC338-25 MPS4124 MPS6514 MPS6515 MPS6560 SS8050 SS8050D 2N3704 2N3705 BC548A BC548B BC548C MPS2222 MPS4123 PN3643

2N6728

Abstract: BC546 BC556 2N4036 national NSDU05
Contextual Info: bflÇ ]> • b S 0 1 1 3 G D G B T S lb 4 3 b « N S C S General Purpose Amplifiers and Switches continued; _ _ N A T L SEni COND ( D I S C R E T E (Volts) Min 65 60 PNP NPN - f i Devices V C E 0 ( m i s I) fT @»c hF E @ lc mA NF (dB) Max Min Max

thermistor KSD201

Abstract: IRF power mosfets catalog Complementary MOSFETs buz11 BZX85C6V8 SPICE MODEL Diode 1N4001 50V 1.0A DO-41 Rectifier Diode K*D1691 make SMPS inverter welding machine transistor KSP44 1N5402 spice model tip122 tip127 mosfet audio amp
Contextual Info: Fairchild Semiconductor Product Catalog 2004 Microcontrollers Optoelectronics Across the board. Around the world. Analog Discrete Interface & Logic Interface & Logic Discrete Power Optoelectronics Analog & Mixed Signal Fairchild Semiconductor, The Power Franchise™