300TIS Search Results

Contextual Info: m i lA r t r u n ms s e m i c o n d u c t o r R U R G 3070, R U R G 3080 R U R G 3090, R U R G 3 0 1 0 0 30A, 700V - 1000V Ultrafast Diodes December 1993 Package Features • Ultrafast with Soft Recovery <110ns • Operating Temperature- +175°C • Reverse Voltage Up T o -

QM6006SC

Contextual Info: OM6005SC C3M6007SC OM6105SC OM6107SC QM6006SC OM6008SC OM61Q6SC QM6108SC POWER MOSFET IN HERMETIC ISOLATED JEDEC TO-258AA PACKAGE 100V Thru 500V. Up To 35 Am p. N-Channel MOSFET With Or W i th o u t Zener Gate C la m p Pro te ctio n FEATURES • • • •

philips diagram fr 310

Contextual Info: Philips Semiconductors Product specification PowerMOS transistor BUK200-50Y TOPFET high side switch_ _ DESCRIPTION Monolithic temperature and overload protected power switch based on M OSFET technology in a 5 pin plastic envelope, configured

RFH25P10

Abstract: RFH25P08 rfh25p
Contextual Info: Standard Power MOSFETs . RFH25P08, RFH25P10 File N u m be r 1632 Power MOS Field-Effect Transistors P-Channel Enhancement-Mode Power Field-Effect Transistors terminal diagram 25 A, -80 V - -100 V fD SIo n l = 0.15 Ci Features: • SOA is power-dissipation lim ited

RD6120

Contextual Info: RHRD6120, RHRD6120S fil IH A R R IS U U S E M I C O N D U C T O R 6A, 1200V Hyperfast Diodes March 1995 Features Package • Hyperfast with Soft R eco • Operating Tem p eratu

SOT-23 Marking code MU

Abstract: AS SOT-23 F 5 Ld SOT-23 N1T SOT23
Contextual Info: TN2130 Low Threshold Supertex inc. N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVoss / Order Number / Package Product marking for SOT-23: RdS<ON max) ^GS(th) BVoos (max) TO-236AB* N1T* 300V 25Q 2.4V TN2130K1 where * = 2-week alpha date code

Q62702-D1340

Abstract: p952
Contextual Info: SIEMENS BDP 952 PNP Silicon AF Power Transistor • For AF drivers and output stages • High collector current • High current gain • Low coliector-emitter saturation voltage • Complementary type: BDP951.BDP955 NPN Marking Ordering Code Pin Configuration

Contextual Info: , Una. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 2N6303 APPLICATIONS: . • . High-Speed Switching Medium-Current Switching High-Frequency Amplifiers FEATURES: . . . • Collector-Emitter Sustaining Voltage: VCEO(SUS) = - 80 Vdc (Min)

WFs transistor

Abstract: Siemens transistor WFs wfs marking
Contextual Info: SIEMENS BCR 112 NPN Silicon Digital Transistor >Switching circuit, inverter, inferface circuit, driver circuit «Built in bias resistor Ri=4.7kQ, R2=4.7kfl BCR 112 WFs Pin Configuration Q62702-C2254 1= B Package 2=E O Marking Ordering Code 05 II Type SOT-23

N-Channel Depletion-Mode MOSFET high voltage

Contextual Info: LND150 inc. N-Channel Depletion-Mode MOSFET Ordering Informâtion Order Number / Package b v dsx/ ^DS ON •d s s BVdcx (max) (min) TO-92 TO-243AA* Die 500V 1.0K£i 1.0mA LND150N3 LND150N8 LND150ND * Sam e as SOT-89 Features Advanced DMOS Technology □ ESD gate protection

VP1008

Contextual Info: Super te x inc. VP0808 VP1008 P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVdss / B V cos Order Number / Package R d S ON *D<ON) (max) (min) TO-39 TO-92 VP0808L VP1008L -80V 5Ü -1.1A VP0808B -100V 5U -1.1A VP1008B Advanced DMOS Technology

Contextual Info: SOT89 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR FCX458 ISSUE 3 - OCTOBER 1995 FEATURES * 400 Volt V rFn * Ptot= 1 Watt CO M PLEM EN TA RY TYPE PARTM ARKING D E T A IL - FCX558 N58 ABSOLUTE MAXIMUM RATINGS. PARAM ETER SY M BO L VALUE U N IT VCBO 400 V V CEO

LTRG

Contextual Info: RURG75120 iH HARRIS S E M I C O N D U C T O R 75A, 1200V Ultrafast Diode April 1995 Features Package • Ultrafast with Soft R ecovery. <125ns • Operating Tem p eratu •

LP1800

Abstract: Transistors IRF 830R IRF830R ltsj
Contextual Info: m H A R R I S IR F 8 3 0 /8 3 1 /8 3 2 /8 3 3 IR F 8 3 0 R /8 3 1 R /8 3 2 R /8 3 3 R N-Channel Power MOSFETs Avalanche Energy Rated* August 1991 Package Features • T 0 -2 2 0 A B 4.0 A and 4.SA, 4S 0V - 5 0 0V T O P VIEW • ro s o n = 1 .5 il and 2 .0 f i