LTSJ Search Results

ltsj

Contextual Info: P.C.B LAYOUT COLOR OF LED lO cm! io TO LERANC E ± 0 .3 1 0 -1 0 0 mm ± 0 .5 A B O V E 100 m m ± 0 .8 AN G LE ±3° CIRCUIT DIAGRAM G Green Y R Red B Blue O Orange W White X D I M E N S IO N B E L O W 10 m m Yellow Without CAP COLOR LtsJ JL £_ G Gray N

Contextual Info: e ^ Tstg Tj Vrm Io a s » -M Ä Ä £ ü $ 1SJ± 2, MWÆ mmm Ifsm 50Hz JESife 7 * ';> n s i i Ta=25t: 50Hz ÏL ^SM 3N £ * i£ L T i= 25t: Vf Ir B il 6 ja TL=25t: If=1A V r=V rm • V - KPbI • Ü H F b! ii y - -5 5 -1 5 0 150 600 0.75 1 45 V A V 1.1 10

iw 1688

Abstract: mwt871HP stn tip 222 TRANSISTOR mwt 871 MWT-871HP
Contextual Info: ÉàBîÉ MwT-8 16 GHz High Power GaAs FET M ic r o w a v e T e c h n o l o g y p -7 5 » j • • • • • • • |* 7 5 n 0.6 WATT POWER OUTPUT AT 12 GHz +40 dBm THIRD ORDER INTERCEPT HIGH ASSOCIATED GAIN 0.3 MICRON REFRACTORY METAL/GOLD GATE 1200 MICRON GATE WIDTH

MDA3500

Abstract: ltsj
Contextual Info: M MDA3500 series M O T O R O L A R E C T IF IE R A S S E M B L Y . . . u tiliz in g in d iv id u a l void -free m o ld ed M R 2 5 0 0 S e rie s re c tifie rs , in te rc o n n e c te d and m o un ted on an e le c tric a lly iso la ted a lu m in u m h eat sin k by a high th e rm a l-co n d u c tiv e e p o x y resin.

HD 11070

Abstract: 7 segment display 5011 ic 1105 1105R HD11070 1105 1105o hd1107r ic 1107 1107G
Contextual Info: I IIF% -i A Aff n u i ius k n nI InV7F • ■ V S e v e n S u y m tM u D is p la y 1■v np m.-rt i n* |V I Qv " !j ■■■■■■ y r c u iu ic a # Excellent readability by ambient light # Excellent characier appearance * Evenly Fighted segments •

f9520

Abstract: GS 9521 irf9520 IRF9520 Samsung IRF9523 9521 ltsj
Contextual Info: P-CHANNEL POWER MOSFETS IRF9520/9521/9522/9523 FEATURES • • • • • • • Lower R ds <on Improved Inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended sale operating area Improved high temperature reliability

250M

Abstract: IRFS240 IRFS241
Contextual Info: N-CHANNEL POWER MOSFETS IRFS240/241 FEATURES • Lower R d s o n • Improved inductive ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Lower input capacitance • Extended safe operating area • Improved high temperature reliability

j332

Abstract: J333 g559 IRFJ330 IRFJ331 IRFJ332 IRFJ333 9405A w sa 45a diode
Contextual Info: h e D I MassMsa a c m s a o a | Data Sheet No. PD-9.405A IN TERNATI ONAL RE CT IF IER r IN T E R N A T IO N A L H E X F E T - 3 R E C T IF IE R ? - T 6 ? & R IR F J 3 3 0 T R A N S IS T O R S IR F J 3 3 1 N-GHANNEL POWER MQSFETs IR F J 3 3 2 IR F J 3 3 3

Contextual Info: SAMSUNG ELECTRONICS INC b7E D 7^4142 IRF840/841/842/843 IRFP440/441 /442/443 D017323 b75 N-CHANNEL POWER MOSFETS FEATURES • • • • • • • Low er R ds <on Im p ro ve d in du ctive r u g g e d n e s s F a s t sw itc h in g tim e s R u g g e d p o ly silic o n g a te cell stru ctu re

NEC 71055C

Abstract: D71055C NEC D71055c 71055C pd71055 D71055GB D71055 IC-6502 PD71055GB-3B4 NEC D71055
Contextual Info: M O S M O S S f S E l]S § In te g r a te d C ir c u it /¿ P D 7 1 0 5 5 y<=7 ¿¿PD 7 1 05 5 ii, n — \y h ^ n 3 >- b” j- — ? •x X t A 1 < ' 7 ' d ? " y -V7"7W£r-'''a7 V ;!✓• -< > H o < 7 )I/ 0 tf- h 4 - ffo T , K x x - 9 7 x — X - jx ^ .y |- X"i~ 0

DT-2R-A7

Abstract: 1772S 25008 c0503 8K10
Contextual Info: H MICRO SWITCH FR EEPO R T. ILLINOIS. U .S.A . A DIVISION OF HONEYWELL ’^ S t SC o S T S s t Rü g “ %}•? D T - 2 R-A 7 SWITCH-BASIC MS 25008-1 FED* MFG. CODE 91S29 L |oQ6 1 6 3 4 T SK 17 «IU I 87 »,9171.010-*^ N- n f i- < i CM c r i .6l5x,OI5 H Û

TAE 1062 A

Contextual Info: r 1 DRAWING NO. SD22390 N AVY CDM'L CABLE 30 90 V53C-L s o V52C- L 6o Ç3Qt 5 sre . 2o&) Cez&J y5Tje (BS/J ,3/ .3/ 1,75 ,3 / 1,93 □ .D. .2 .7 .30 1,90 (e*r¥) 3 ST/EL (3&0 ,88 2,05 ,3e (,38a) e s r / e .8 8 .88 .88 2,07 , 2,08 ,9 V 2,17 2,30 (z°>0 y s / c - L

LP1800

Abstract: Transistors IRF 830R IRF830R ltsj
Contextual Info: m H A R R I S IR F 8 3 0 /8 3 1 /8 3 2 /8 3 3 IR F 8 3 0 R /8 3 1 R /8 3 2 R /8 3 3 R N-Channel Power MOSFETs Avalanche Energy Rated* August 1991 Package Features • T 0 -2 2 0 A B 4.0 A and 4.SA, 4S 0V - 5 0 0V T O P VIEW • ro s o n = 1 .5 il and 2 .0 f i

ltsj

Abstract: UFN350 K52A
Contextual Info: UNITRODE CORP 9347963 92D U N I T R O D E CORP D 10666 POWER MOSFET TRANSISTORS UFN350 UFN351 UFN352 UFN353 400 Volt, 0.3 Ohm N-Channel FEATURES • Fast Switching « Low Drive Current • Ease of Paralleling • No Second Breakdown • Excellent Temperature Stability