LND150N8 Search Results

Contextual Info: Supertex inc. LND150 N-Channel Depletion-Mode MOSFET Ordering Information Order Number / Package b v dsx/ ^DS ON Idss b v dgx (max) (min) TO-92 TO-243AA* Die 500V 1.0KQ 1.0mA LND150N3 LND150N8 LND150ND * Sam e as SO T-89. P roduct shipped on 2000 piece c a rrie r tape reels.

N-Channel Depletion-Mode MOSFET high voltage

Contextual Info: LND150 inc. N-Channel Depletion-Mode MOSFET Ordering Informâtion Order Number / Package b v dsx/ ^DS ON •d s s BVdcx (max) (min) TO-92 TO-243AA* Die 500V 1.0K£i 1.0mA LND150N3 LND150N8 LND150ND * Sam e as SOT-89 Features Advanced DMOS Technology □ ESD gate protection

LND150N8 equivalent

Abstract: TO-243AA LND150N8
Contextual Info: Package Outline 0.055 0.063 0.173 0.181 0.064 0.072 0.014 0.017 0.155 0.167 0.090 0.102 1 2 0.084 0.090 3 0.035 0.047 0.014 0.019 0.059 BSC 0.118 BSC 0.017 0.022 For LND150N8 only: 1-Gate 2-Drain 3-Source TO-243AA SOT-89:N8 Note: Circle (e.g. B ) indicates JEDEC Reference.

LND150N8 equivalent

Abstract: depletion n-channel mosfet to-92 LND150 LND150N3 LND150N8 LND150ND MOSFET IGSS 100nA VDS 20V depletion-mode MOSFET
Contextual Info: LND150 N-Channel Depletion-Mode MOSFET Ordering Information Order Number / Package BVDSX / BVDGX RDS ON (max) IDSS (min) TO-92 TO-243AA* Die 500V 1.0KΩ 1.0mA LND150N3 LND150N8 LND150ND * Same as SOT-89. Product shipped on 2000 piece carrier tape reels.

TO-243AA

Abstract: PO23 jedec Package LND150N8 equivalent PO24 LND150N8 TO243AA
Contextual Info: Package Outlines .173 .181 .064 .072 .155 .167 .035 .047 1 2 .014 .019 .055 .063 3 .090 .102 .017 .022 .059 BSC .014 .017 .084 .090 1-Gate 2-Drain 3-Source .118 BSC For LND150N8 only: 1-Gate 2-Source 3-Drain TO-243AA SOT-89 Surface Mount "N8" Package 17

ln1e

Abstract: depletion n-channel mosfet to-92 marking code ln1e MOSFET IGSS 100nA VDS 20V depletion mode ramp generator LND150 LND150N3 LND150N8 LND150ND
Contextual Info: LND150 N-Channel Depletion-Mode MOSFET Ordering Information Product marking for TO-243AA: Order Number / Package BVDSX / BVDGX RDS ON (max) IDSS (min) TO-92 TO-243AA* Die 500V 1.0KΩ 1.0mA LND150N3 LND150N8 LND150ND LN1E❋ * Same as SOT-89. Product shipped on 2000 piece carrier tape reels.

MOSFET IGSS 100nA VDS 20V

Abstract: N-Channel Depletion-Mode MOSFET depletion n-channel mosfet to-92 N CHANNEL DEPLETION MOSFET N-Channel Depletion-Mode MOSFET high voltage TO-243AA 1000 volt mosfet to-92 depletion 400V power mosfet LND150N3 LND150N8
Contextual Info: LND150 N-Channel Depletion-Mode MOSFET Ordering Information Order Number / Package BVDSX / BVDGX RDS ON (max) IDSS (min) TO-92 TO-243AA* Die 500V 1.0KΩ 1.0mA LND150N3 LND150N8 LND150ND * Same as SOT-89. For carrier tape reels specify P023 for 1,000 units or P024 for 2,000 units.

PLCC-6 5050

Abstract: P-Channel mosfet 400v to220 pj 84 elmwood 2450 MOSFET 400V depletion p channel 240v n-channel depletion mosfet mosfet driver 400v ks 4290 P-Channel Depletion-Mode HT0440LG
Contextual Info: WEB SITE/OEM PRICE LIST OCTOBER 15, 1999 Supersedes September 1998 Web Site/OEM Price List High Voltage ICs, MOSFETs and Arrays 1 SUPERTEX, INC. TERMS OF SALE information and assistance at the Buyer's expense for the defense of same, and the Buyer shall pay all damages and costs awarded therein against the Seller. In case

simple LM324

Abstract: lm324 equivalent
Contextual Info: LND1 Series Application Note AN–D11 ± 500 Volt Protection Circuit Introduction Circuit Description A ±500V protection circuit for low voltage high impedance measuring instruments is shown in Figure 1. The protection is accomplished by limiting the amount of current going into the

LN1E

Abstract: Marking code mps
Contextual Info: LND150 N-Channel Depletion-Mode DMOS FET Features General Description ► ► ► ► ► ► ► The LND150 is a high voltage N-channel depletion mode normally-on transistor utilizing Supertex’s lateral DMOS technology. The gate is ESD protected. Free from secondary breakdown

SOT-89 marking N2

Contextual Info: VN2450 VN2450 New Product N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVDSS / BVDGS RDS ON (max) ID(ON) (min) TO-92 TO-243AA* Die* 500V 13Ω 0.5A VN2450N3 VN2450N8 VN2450MW * Same as SOT-89 Product Supplied on 2000 piece carrier tape reels.

transistor marking code 12W SOT-23

Abstract: 12w SOT 23 package marking code marking 12W SOT23 12w marking code sot 23 LN1E 12w marking code sot23 12W MARKING sot23 12w marking code of transistor sot 23 sot-23 marking 12w 12w sot-23
Contextual Info: LND150 N-Channel Depletion-Mode DMOS FET Features ► ► ► ► ► ► ► General Description Free from secondary breakdown Low power drive requirement Ease of paralleling Excellent thermal stability Integral source-drain diode High input impedance and low CISS

P-Channel Depletion Mosfets

Abstract: ultrasound transducer circuit driver 1mhz ultrasound transducer circuit driver analog switch circuit using mosfet ultrasound transducer transformer fast high side mosfet driver p channel depletion mosfet ultrasound transducer high power driver p channel mosfet 100v N-Channel 40V MOSFET
Contextual Info: HT04 Series Applications HT04 Series Application Note AN-D26 High Voltage Isolated MOSFET Driver logic high. The internal clock can be disabled by applying an external clock signal to the CLK pin. This allows the power dissipation and AC characteristics to be tailored to meet specific needs. The HT04 does not require any external power

IN4006

Abstract: VN0660N5 IN757 UC3845N Diode IN4006 12v dc 240v dc step up IN4006 diode LND150N3 240V A.C. to 9V D.C. converter ZENER IN4006
Contextual Info: LND1 Series Application Note AN-D25 3 Efficient Switchmode Power Supply Start-Up Circuit by Jimes Lei, Applications Engineer Introduction voltage rating of the IC, the voltage has to be reduced with a startup circuit. A frequent requirement is for operation directly from a

Diode IN4006

Abstract: IN4006 Step-Up voltage 120VAC to 240 VAC SMPS 9V power uc3845n IN757 240V A.C. to 30V D.C. transformer 240v ac to 5v dc converter 240V A.C. to 9V D.C. converter IN4006 diode
Contextual Info: LND1 Series Application Note AN-D25 Efficient Switchmode Power Supply Start-Up Circuit by Jimes Lei, Applications Engineerinng Manager Introduction The circuit in Figure 1 shows the Supertex LND150N3 being used to provide the low voltage power supply to be connected to

transistor marking code 12W SOT-23

Abstract: marking 12W SOT23 12w SOT 23 package marking code 12w marking code sot 23 12W MARKING sot23 12w marking code sot23 LN1E LND150k1-G 12w 08 12w marking code of transistor sot 23
Contextual Info: LND150 N-Channel Depletion-Mode DMOS FET Features ► ► ► ► ► ► ► General Description Free from secondary breakdown Low power drive requirement Ease of paralleling Excellent thermal stability Integral source-drain diode High input impedance and low CISS

transistor marking code 12W SOT-23

Abstract: 12w marking code sot 23 12w SOT 23 package marking code marking 12W SOT23 12W MARKING sot23 fet sot-89 marking code SOT MARKING 213 LN1E 12w marking code of transistor sot 23 Marking code 12w SOT-23
Contextual Info: LND150 N-Channel Depletion-Mode DMOS FET Features General Description ► ► ► ► ► ► ► The LND150 is a high voltage N-channel depletion mode normally-on transistor utilizing Supertex’s lateral DMOS technology. The gate is ESD protected. Free from secondary breakdown

Contextual Info: TN2640 Low Threshold Preliminary N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information † Order Number / Package BVDSS / BVDGS RDS ON (max) VGS(th) (max) ID(ON) (min) SO-8 TO-92 Die† 400V 5.0Ω 2.0V 2.0A TN2640LG TN2640N3 TN2640ND MIL visual screening available.

LN1E

Contextual Info: LND150 N-Channel Depletion-Mode DMOS FET Features General Description ► ► ► ► ► ► ► The LND150 is a high voltage N-channel depletion mode normally-on transistor utilizing Supertex’s lateral DMOS technology. The gate is ESD protected. Free from secondary breakdown

RH5RA50AA

Abstract: 300V regulator diode 1N4005 specifications Current Rating of IN4005 diode 400V voltage regulator power diode with piv of 30v and 6A depletion 400V power mosfet N-Channel Depletion-Mode MOSFET high voltage High voltage negative regulator 120vac to 5v dc
Contextual Info: LND1 Series Applications LND1 Series Application Note AN–D17 High Voltage Off-Line Linear Regulator by Jimes Lei, Applications Engineer and inexpensive. The high operating voltage and high transient voltage protection are achieved by using Supertex part

ultrasound transducer circuit driver 1mhz

Abstract: VN3205N8 HT04 HT0440 HV2216 LND150N8 TN2524N8 TN2540N8 analog switch circuit using mosfet P-Channel Depletion-Mode
Contextual Info: HT04 Series Application Note AN-D26 High Voltage Isolated MOSFET Driver The Supertex HT0440 is a dual high voltage isolated driver utilizing Supertex’s proprietary HVCMOS technology. It is designed to drive discrete MOSFETs configured as bi-directional or unidirectional switches. It can drive N-channel MOSFETs as

500V voltage regulator

Abstract: depletion mode current limiter depletion mode ramp generator High Voltage Regulators LND150N3 high impedance current sources -rs LND150N8 RX5RA30AX DN25 VN0550N3
Contextual Info: LND1 Series Application Note AN-D16 High Voltage Regulators and Linear Circuits using LND1 Depletion-mode MOSFETs can be used either as “normally closed” switches or current sources. This note shows circuits, utilizing depletion mode devices, that will benefit many applications. The main performance features of the circuits and ex-