2N4945 Search Results

Contextual Info: 2N4945 Transistors Si NPN LP HF BJT Military/High-RelN V BR CEO (V)40 V(BR)CBO (V)75 I(C) Max. (A)500m Absolute Max. Power Diss. (W)220m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)10nØ @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.100 h(FE) Max. Current gain.

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

rca 2n2147

Abstract: 2N2207 2n2183 rca 2N2196 2N2214 2N2161 2N2222A motorola 2N2204 2n2162 2N2200
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number V BR CEO 5 10 15 20 25 30 35 40 45 50 55 60 65 70 75 80 85 90 95 714 BFX69A BFX69A 2N1594 BCW94A 2SC366G 2N1644A 2N2192 2N2192A 2N2192B MPS650 CX904 CX904 2SC943 2SC943 2SC943 KT503B BCW90B BCW90B 2N731 Manufacturer

2N5815

Abstract: 2N5225 N5226 2N4971 2N5042 2N5143 2N4235 2N4236 2N4238 2N4314
Contextual Info: Medium Power Amplifiers and Switches H P O L A R IT Y M A X IM U M R A T IN G S C A SE 2N4238 2N4239 2N4314 2N4400 2N4401 2N4402 N N P N N P TO-39 TO-39 TO-39 TO-92A TO-92A TO-92A 1000 1000 1000 5004 5004 500 ♦ 1 1 1 0.6 0.6 0.6 60 80 65 40 40 40 30 30 50

2N3638

Abstract: 2N4121 2N4945 TO-106 2N4122 SE1001 2N5855
Contextual Info: TRANSISTORS—SMALL SIGNAL NPN GENERAL PURPOSE AMPLIFIER AND SWITCHING TRANSISTORS BY ASCENDING VCEO PLASTIC PACKAGE Continued (ALSO SEE LOW LEVEL AN D HIGH VOLTAGE SECTION) V CEO SZ cc LU O > (hfe) LU LL V CE(sat) Cob fT PD ^off MHz ns mA MAX MIN MAX mW

2n7588

Abstract: P3139 BC233A sprague 40d GEX36/7 C4274 s1766 C12712 TC236 GP149
Contextual Info: SPRAGUE THE M A R K O F R E L I A B I L I T Y SEMICONDUCTOR REPLACEMENT MANUAL K -5 0 0 TABLE OF CONTENTS Guidelines for Replacing Semiconductors. 1 Specifications, Small-Signal and Power Transistors.

NSE180

Abstract: 2N4945 D40D8 NSDU02 nsd102 NSDU05
Contextual Info: NATL SEMICOND DISCRETE SEE » • bSG1130 GG377fl4 T ■ T-27-ÔI NPN Medium Power Transistors by Ascending Vceo Part No. Hfe a lc/Vce (V) NSE871 TN1711 • Min Max (mA/V) Vea (sat) (V) Max 50 40 300 25/20 500/10 1.5 150 TO-202 TO-237 Vceo lc/lb (mA)/(mA)

2N3643 TO-105

Abstract: 2N3566 2N3569 2N2711 2N2712 2N2713 2N2714 2N2923 2N2924 2N3568 central
Contextual Info: T 1989963 "CENTRAL SEMICONDUCTOR 61C 00210 TËT| 1l i m b 3 QDD0210 D | L .1 NPN EPOXY - SWITCHING AND GENERAL PURPOSE VCB V CE V EB hFE at *C V V V min max mA 2N2711 2N2712 2N2713 2N2714 2N2923 18 18 18 18 25 18 18 18 18 25 5 5 5 5 5 30 75 30 75 90 90 225

NSD102

Abstract: D42C5 040e5 NSE180 2N4945 NSE871 d42c2 TO-202 transistor NPN NSDU05 2N6714
Contextual Info: NATL SEMICOND DISCRETE 5SE D • bSG1130 Ci a377a4 T ■ T-27-0! NPN Medium Power Transistors by Ascending Vceo Part No. Hfe a lc /V ce Vceo (V) NSE871 TN1711 ’ Vce (sat) (V) Ic/lb M ax (mA)/(mA) Min M ax (m A/V) 50 40 300 25/20 500/10 1.5 150 Package

Contextual Info: SPRAGUE/SEMICOND 8514019 GROUP SPRAGUE. =13 D • Ô5 1 3 Ô S 0 D 0 0 3 5 Ö7 SEM ICO N D S/IC S 93D 5 ■ 03587 P . T " " PLASTIC-CASE BIPOLAR TRANSISTORS NPN Transistors ‘2N’ and ‘TP’ Device Types ELECTRICAL CHARACTERISTICS atTA = 25°C DC Current Gain

2n4889

Abstract: 2N4858 TEXAS 2N4418 2sa777 2n4891 2N4917 2SA8150 6ae diode 2N4417 2N6556
Contextual Info: POWER SILICON PNP Item Number Part Number I C 5 10 >= 20 25 30 BCX53 MH0816 MH0818 MM4006 M0818 M0818 MM4031 ST4031 BCX53•6 ZTX552 BOW60 NS0204 2SA780AK BSV17·10 BSV17·10 BSV17·10 BSV17·6 BSV17·6 ~l,;X:';HU 35 40 45 50 2SA777 2SA777 B0418 2N6555 2SB1042M

SSP35n03

Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
Contextual Info: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A

Contextual Info: 1989963 "CENTRAL SEMICONDUCTOR -_ ~ V\. 61C 00210 T d T I n a n t. 3 d d d o s i d d| _ NPN EPOXY - SW ITCHING A N D G ENERAL PURPOSE

Transistor C107m

Abstract: t25000 SCR TRANSISTOR 8TA41600B T106F1 SCR SC160D TIC106M SCR SC136B Triac Q2006R5 BTA417008
Contextual Info: "'ART VJMEEF INDEX Part No. 1N4001 1N4002 1N4003 1N4004 1N4005 1N4006 1N40Q7 1N4622 1N4732 1N4733 1N4744 1N5225 1N5400 1N5401 1N5402 1N5404 1N5405 1N5625 1N750 2N0918 2N1770 2N1771 2N1772 2N1773 2N1774 2N1775 2N1776 2N1777 2N1778 2N1842 2N1843 2N1844 2N1845

1.0 k mef 250

Abstract: ME4003 ME4002 MA0411 transistor me6101 transistor BC 172B 2N2959 transistor bf 175 2N5173 2n3072
Contextual Info: INTRODUCTION This is Micro Electronics latest short form catalogue on discrete semi-conductor devices. We have introduced many new products since the previous publication. This guide provides a quick reference on the characteristics o f our products. Separate data sheets for a

TRANSISTOR 2N4289

Abstract: Q4006at 2N2222A mps quadrac Q5010A NPN transistor 2n2222A Q4010LT 2N39Q3 Q6015A lora
Contextual Info: LO RA S INDUSTRIES INC MEE D • 5500440 OGGDQET G H L O R A TRANSISTOR PART No TYPE PACKAGE T O - 1 8 Package 2N0918 2N2221 :2N2222 2N2222A NPN NPN NPN NPN DESCRIPTION Pt @25°C Watts !<¿ Amps -r - n~? i 1 t-U\ VEBO Volts VCEO Volts VCBO Volts Hfe Hfe \ç

2N4858 TEXAS

Abstract: 2N4872 SIEMENS 5SN 2N4433 Qualidyne 2N4418 transtek 40391 RCA 2N4417 api 560
Contextual Info: POWER SILICON PNP Item Number Part Number I C 15 20 25 35 45 55 60 65 320 300 300 300 400 80M 70M 70M 70M KSA931 2N3468 2S8733 2N6094 8CX69-10 2S8956 8CX69-16 8CX69-25 MPS6651 MPS6651 Samsung See Index NEC Corp JA See Index Siemens Akt Matsushita Siemens Akt

LG color tv Circuit Diagram schematics

Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

MT1115

Abstract: 2N3303 FPT100 phototransistor UA739 equivalent transistor bc 554 pnp mt1039 ft2974 fairchild 2N3565 FD6666 diode transistor npn Epitaxial Silicon SST 117
Contextual Info: Fairchild Semiconductor T ransistor and Diode Data Catalog 1970 The Fairchild Semiconductor Transistor anc Diode Data Catalog is an all-inclusive volume of product information covering diodes anc transistors. Selection guides and data sheets fot each category of products assist you ir

MC2259

Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
Contextual Info: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the

RCA SK CROSS-REFERENCE

Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
Contextual Info: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered

transistor c2060

Abstract: Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor
Contextual Info: Data Book Updating Service I Table of Contents How to Use the Data Book I > INTRODUCTION Complete I N . . . INDEX numerical index o f all ElA-registered device types, with major electrical specifications 2N . . . & 3N . . . INDEX Complete numerical index of all ElA-registered device types,

IN733A

Abstract: 2N551 IN768A 2N146 2N2405 2N339 2n3072 2N244 2N1234 2N1167
Contextual Info: 666-001 N r lN N C ^ n 'O N N O V T ic v lO O O 'n'O 'O O 'O O O^t VTi^VTiO 0 r | 0 4 '4 ' 0 \0 ' 0 0 0 0 0 00 0 0 0 CN-NArHCMO 0 0 O 00 o cn-nacm cmcm < m< m cacacananananaooco o n o h h h cMH4 , 'A n N r < 4 - nano cn-no cmcacmcmcmcmcmcmcm canono oo ono cacano

y51 h 120c

Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK