T018 Search Results

Contextual Info: SIEMENS SFH 4413 LOW POW ER LA SE R D IO D E IN T018 PA CKA G E Package Dimensions in mm FEATU R ES Maximum Ratings * InGaAsP/lnP MCRW-Laser Diode Output power ratings refer to the totalemittedpower at frontwindow. The operating temperature of thesubmount isidentical with the case

Contextual Info: InN ET TE C H N O LO G IE S technologies 6 1 T0184S Electrical E L E C T R IC A L S P E C IF IC A T IO N S REV. 0 1 TURNS RATIO: (T X IN + ) (R X O + ) - (C TIN ) (R XO —) : ( T X IN - ) : (T X O + ) (R X IN + ) - (R X IN - ) (CTO) (T X O -) 1CT : 1CT ±

Contextual Info: InN ET TE C H N O LO G IE S t e c n o lo gi es @ t T0181 Electrical E L E C T R IC A L S P E C IF IC A T IO N S REV. 0 2 TURNS RATIO: 1 -2 : 3 -4 : 5 -6 1 : 1 : 1 ± 3% INDUCTANCE: 1-2 200 uH MIN. @ 0 .1 V , 1 10KH z I 1 I 1 " LEAKAGE INDUCTANCE: 1 -2

Contextual Info: ' T •typeNo. Package vCEO ■c cont hF E @ V c e /Ic *T Pd HI-REL HI-REL HI-REL SCREEN SCREEN NPNP PNP NPN NPN NPN T039 T018 T018 T039 T039 12 20 80 80 0.2 0.2 1 1 30-120 30-120 80min 30min 0.5/30m 0.4/30m 5/lra 5/lm 400M 350M 100M 80M 0.36 0.36 0.8 0.8

74ACTQ18823

Contextual Info: Q18823 NATIONAL SEIUCOND L06IC blE ]> • bSOllES DQTSBSI 1T4 BINSCl r - ¥ é ^ - /2 L National Semiconductor 74ACTQ18823 18-Bit D Flip-Flop with TRI-STATE Outputs General Description Features The 'AC T018823 contains eighteen non-inverting D flip­ flops with TRI-STATE outputs and is intended fo r bus orient­

Contextual Info: SFH 216 SIEMENS SILICON PIN PHOTODIODE FEATURES Maximum Ratings * Package: 18 A3 DIN 41870 T018 , Glass Lens, Hermetically Sealed, Solder Tabs, Lead Spacing 0.1 ' (2.54 mm) O perating and Storage Tem perature Range (T0P T stg ) . - 40" 10 +80"C

2N2894 FAIRCHILD SEMICONDUCTOR

Abstract: BC253C 2N4258 BC171 2N2907A FAIRCHILD SEMICONDUCTOR bc252b BC107 itt 2N3209 2N5023 BSX29
Contextual Info: Fairchild Sem iconductors Sem iconductors Silicon Small Signal Transistors P N P H igh Speed Saturated Sw itching Transistors M etal C a n T018, T 039 R EFEREN CE T A B L E For medium speed - see générai purpose section C H A R A C T E R I S T IC S M A X R A T IN G S

80139

Abstract: C1549C 098j C735-0 A356A UI-03 r140u
Contextual Info: 3_ tu THIRD AWQLg W O JEC rfO N is wpuBLf5HBP. I » n rojeo w » publication .19 SpWIHT !• T0180139 -20.07- p me L7K G REDRAWN u w R£V/S/0N5 / a* / ato ft/n/w 1 — ] eaaurnm C.7903 •18.03- ;v ■+-i C.710J &■ m IN 18.03±0.2S NYLON, UL 94V-0 RATED, BLACK.

Bc177a

Contextual Info: 37E D SEMELAB LTD fll331fl7 DDD0031 5 ISMLB - y - X J - 01 — type No. Package Vc e o •c cont hFEc PD V c e /'C B C1 0 7 BC107A BC107B BC108 BC108A SCRE E N SCREEN SCREEN SCRE E N SCREEN NPN NPN NPN NPN NPN T018 T018 T018 T018 T018 45 45 45 20 20 0.1 0.1

Contextual Info: INFRARED EMITTING DIODE T018 PACKAGE Preliminary Data Sheet Package Dimensions in mm Chip Loacation 1.95 1.65 0.35 0.25 Anode / . . A 04.80 04.55 i .27 Lead spacing: X Cathode GND 2.8 15.0 2.4 12.0 " T FEATURES Meximum Ratings • InGaAePflnP PIN Photodiode

Contextual Info: SIEMENS ; SFM 4212 IRED T018PACKAGE Package Dimensions in rum FEATURES Maximum Ratings * InGaAsP/lnP-IRED * Emission Wavelength: 2"d Optical Window 1300 nm * Suitable for Bit Rates up to 50 Mbit/s * 200 Mbit/s with Appropriate Pulse Shaping of Modulation Current

LF50

Contextual Info: bOE D • fl23SbGS DDi4b551 57b « S I E G -7=<Y/-&7 SIEMENS SFH4210 SIEMENS AKTIENGESELLSCHAF INFRARED EMITTING DIODE T018PA C K A G E ^ ■L Preliminary Data Sheet FEATURES Maximum Ratings * InGaAsP/lnP IRED Operating Temperature Range at Case Tc Storage Temperature Range (T3To)

2n2222a SOT23

Abstract: 2N3904DCSM 2n1485 2N2453 2N3680 2n2222 sot23 BFX81 2N1132 2N1483 2N1484
Contextual Info: L -S tl'-O f " T - 3 3 - o7 iS E M E L A B MANUFACTURING • 37E SEMELAB LTD 6133167 □ □ □0CH 7 Package v CEO "2N 708'\ CV-0 2N 697 CV-0 2N 930 4 CV-0 2N1132 CV-0 2N1483/ CV-0 BS-0 NPN NPN NPN PNP NPN T018 T039 T018 T039 T08 15 40 45 35 40 0.1 0.5 0.1

BFX36

Abstract: 2N3904DCSM 2N3904D 2N3680 BFT39 2N2222ADCSM BFX11 BFY84 BLY11 BFT40
Contextual Info: 37E D SEMELAB LTD 31331B7 OOOODTb fl jl S E M E L A B MANUFACTURING! • c BS/CECC Polarity Package v CEO cont h F E BFT37 BFT39 BFT40 BFT41 BFT57 BS-0 BS-0 BS-0 BS-0 BS-0 PNP NPN NPN NPN NPN T039 T039 T039 T039 T018 100 80 60 50 160 5 1 1 1 0.2 50-200 250 typ

3N225

Abstract: BF805 3N201 3N211 BF802 3N202 BF806 BF800 3N204 3N205
Contextual Info: mTexas In s tru m e n ts FET's For V H F A m p lifie rs and M ix e rs Type No. Case I g s s Vp Ciss Crss Pol max. max max. max. nA V pF 2N3823 T072 N 0.5 8 6 2N4416 T072 2N4416A T072 N N 0.1 0.1 6 6 4 4 0.8 0.8 4000 400 4000 10 2 N5549 N 0.25 6 8 2 6000 T018

T018 pin-out

Contextual Info: SAW Filters TMX T018 SAW Bandpass Filter – CDMA450 – Rx RF Specification Rev. 3 Package Drawing & Pinout .P01

Contextual Info: SIEMENS SFH 4413 LOW POWER LASERDIODE IN T018PACKAGE P a c k a g e D im e n s io n s in m m 3 75 3 .2 5 150 1 1 .0 1.3 1 1" 0 0 .5 00 3 0 3 .7 0 3 .4 ^ I 1 57 1 37 M D .; LD [O l 0 I ¡A: E m ittin g F a ce t FEATURES Maximum Ratings • InGaAsP/lnP MCRW-Laser Diode

V405A

Abstract: BFR38 2N2907 plastic BFR99 BFY18 BFY64 sgs 2n2907a transistor 2N4033 2N2894 2N3209
Contextual Info: Fairchild Sem iconductors Sem iconductors Silicon Small Signal Transistors P N P High Speed Saturated Switching Transistors Metal Can T018, T039 R E FE R E N C E T A B L E For medium speed - see générai purpose section C H A R A C T E R IS T IC S M A X R A T IN G S

GRF342

Abstract: Relay circuit LAYOUT Duroid 6002 31PL
Contextual Info: SURFACE MOUNTING GRF342 RELAYS Application Note T0180 provides suggested surface mounting information and printed circuit board [PCB] artwork for circuit traces and RF ground plane configurations. Suggested information provided is intended for use with Teledyne Relays’ GRF342 surface

NTE153

Abstract: Nte 157 NTE123AP nte129 NTE159M nte123
Contextual Info: BI-POL AR TRANSISTORS Collector to Base Volts Collector to Emitter (Volts) Emitter to Base (Volts) Maximum Collector Power Dissipation (Watts) Case Style Diag. No. Maximum Collector Current (Amps) BV ceo BV ebo &FE T018 28a •c 0.8 BVcbo Amp, Audio to VHF Freq.,

k 117

Abstract: k117 BAX65 BCW35 BCY30A BCY31A BCY32A BCY33A T0532 BCY39A
Contextual Info: SENELAB LTD 37E J> m A1331A7 OOODOTfl I SMLB S E M E L A B MANUFACTURING Polarity Package VCEO •c cont Diode Array NPN PNP PNP PNP T077 40 0.3 T018 T018 T 05 T 05 45 45 64 64 0.6 0.6 0.1 0.1 PNP PNP PNP PNP PNP T 05 T 05 T05 T 05 T 05 64 32 32 64 32 0.1

H0A0872-n55

Abstract: H0A1405-1 H0A0865-L51 h0a1405 HOA708-1 HOA9 til78 phototransistor MOC70T3 ir diode TIL38 H0A1874-12
Contextual Info: Cross Reference Cross Reference Competition P/N Honeywell P/N Code Description Competition P/N 100 H0A0871-N55 B TRANS ASSY. PTX 5082-4205 CALL PHOTODIODES. P P P IN 101 H0A1872-12 BC TRANS ASSY. PTX 5082-4207 CALL PHOTODIODES. T018 TALL PIN 10501 H0A1872-1

Contextual Info: SIEMENS SFH2210 TERNARY PIN PHOTODIODE T018PA C K A G E P relim in ary Data Sheet Package Dimensions in mm Chip Location OD o —j^ FEATURES Maximum Ratings * InGaAs/lnP PIN Photodiode * Sensitive Receiver for the 2nd and 3rd Window 1300 nm and 1500 nm * Suitable for Bit Rates up to 1.2 Gbit/s

2369

Abstract: T018 T072 PN2368 NKT13329 13429 16229
Contextual Info: NPN Silicon Transistors N P N S ilic o n Planar T ransistors fo r high speed sw itching and high fre q u e n cy use Type M a x im u m ratings Case BSY 95A T018 T018 T018 T018 N K T 13329 N K T 13429 N K T 16229 PN 918 PN 2368 PN 2369 T018 T018 T072 Plastic T 0 1 8