BFT60 Search Results

Contextual Info: BFT60 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 35V 0.41 (0.016) 0.53 (0.021)

BFY83

Abstract: BLY48
Contextual Info: SEMELAB pic - SELECTOR GUIDE DISCRETE BI-POLAR DEVICES TypeN o BFT37A CECC BFT39 BFT40 BFT44 BFT45 BFT46CSM BFT48 BFT49 BFT53 BFT54 BFT57 BFT58 BFT59 BFT60 BFT61 BFT62 BFT69 BFT70 BFT71 BFT79 BFT80 BFT81 BFW16 BFW43 BFW44 BFX11 BFX15 BFX17 BFX29 BFX30 BFX34

tc5118165bj

Abstract: TC5118165B TC5118165 ct rac 70 TC5118165BFT
Contextual Info: TOSHIBA TC5118165BJ/BFT60/70 PRELIM INARY 1,048,576 W O RD X 16 BIT HYPER PAGE EDO DYNAMIC RAM Description The TC5118165BJ/BFT is the hyper page (EDO) dynamic RAM organized 1,048,576 words by 16 bits. The TC5118165BJ/ BFT utilizes Toshiba's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operat­

BFT60

Contextual Info: BFT60 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 35V 0.41 (0.016) 0.53 (0.021)

Contextual Info: BFT60 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 35V 0.41 (0.016) 0.53 (0.021)

BE423

Contextual Info: TOSHIBA TC5118325BJ/BFT-70 PRELIMINARY 524,288 WORD X 32 BIT EDO DYNAMIC RAM Description The TC5118325BJ/BFT is the Hyper Page Mode (EDO) dynamic RAM organized 524,288 words by 32 bits. The TC5118325BJ/BFT utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit techniques to pro­

Contextual Info: m 'i[m24û D02ô4Db 752 m- TOSHIBA TC5118180BJ/BFT-60/70 PRELIMINARY 1,048,576 WORD X 16 BIT FAST PAGE DYNAMIC RAM Description TheTC 5118180BJ/B FT is the fast page dynamic RAM organized as 1,048,576 w ords by 18 bits. TheTC 5118180BJ/B FT utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating

TC5118165

Abstract: TC5118165BFT
Contextual Info: INTEGRATED TO SH IB A M O S D IG ITA L INTEG RATED CIRCUIT CIRCUIT T C 5 1 1 8 1 6 5 BJ / B F T - 60 T C 5 1 1 8 1 6 5 BJ / BFT - 70 TOSHIBA TECHNICAL TE N TA TIV E D A T A 1 ,0 4 8 ,5 7 6 W O R D x DATA SILICON GATE C M O S 16 BIT HYPER PAGE ED O D Y N A M IC R A M

BFT 50 TH

Contextual Info: PRELIMINARY 1,048,576 WORD x 1 BIT DYNAMIC RAM DESCRIPTION T he TC511002BP/BJ/BZ/BFT is th e new g en eratio n dynam ic RAM organized 1,048,576 words by 1 bit. T he TC511002BP/BJ/BZ/BFT utilizes TO SH IB A ’S CMOS Silicon gate process technology a s w ell as

BF178

Abstract: bf179 BFT79 BF177 2N2219 2N2905 bf338 BFQ36 BC325 2N3571 2N3572
Contextual Info: Metal Can 0-76 Case BV CBO V V V 30 25 25 15 15 13 3 3 3 0 -4 8 0 2N3570 2N3571 2N3572 *Tt i 4-95JÍ -12-7 h min I—-5 -3 Dimensions in mm NPN NPN NPN T072 T072 T072 Maximum ratin as BV BV CEO EBO hFE1 • mA min. max. f 50 50 50 5 5 5 150 200 300 1000 450

F13S

Abstract: BFQ35 BC177 pnp transistor transistor bc303 transistor t05 BF179 2n3440 equivalent bc304 equivalent bc143 equivalent 2N3570
Contextual Info: Metal Can 0-76 Case BV CBO V V V 30 25 25 15 15 13 3 3 3 0 -4 8 0 2N3570 2N3571 2N3572 *Tt i 4-95JÍ -12-7 h min I—-5 -3 Dimensions in mm NPN NPN NPN T072 T072 T072 Maximum ratin as BV BV CEO EBO hFE1 • mA min. max. f 50 50 50 5 5 5 150 200 300 1000 450

BC177 NPN transistor

Abstract: BC178 TRANSISTOR bc108 bc325 bf179 BF177 transistor NPN BC178 applications of Transistor BC108 BC326 BFQ35
Contextual Info: Metal Can Metal Can Product Variations Low Level General Purpose Am plifiers TO-5, TO-39 and TO-18 can be supplied with several variations from standard. Device Type Lead Length The standard lead length is 12,7mm 0,5in . Certain types are available with longer leads— 38,1mm (1,5in) at a small extra

C495 transistor

Abstract: c735 2N1893 equivalent c644 C735 O 2N2222 hfe C749 2N3570 transistor C633 NPN C460
Contextual Info: Metal Can 0-76 Case BV CBO V V V 30 25 25 15 15 13 3 3 3 0 -4 8 0 2N3570 2N3571 2N3572 *T t i 4-95JÍ -12-7 h min I—-5 -3 Dimensions in mm NPN NPN NPN T072 T072 T072 Maximum ratin as BV BV CEO EBO hFE1 • mA min. max. f 50 50 50 5 5 5 150 200 300 1000 450

bc109 equivalent

Abstract: BC107 equivalent transistors EQUIVALENT TRANSISTOR bc108 bc108 equivalent BC177 equivalent BC107 equivalent BC178 equivalent equivalent of BC178 2n3963 equivalent transistor equivalent bc108
Contextual Info: Metal Can Metal Can Product Variations Low Level General Purpose Am plifiers TO-5, TO-39 and TO-18 can be supplied with several variations from standard. D evice Type Lead Length The standard lead length is 12,7mm 0,5in . Certain types are available with longer leads— 38,1mm (1,5in) at a small extra

TC51V17405

Contextual Info: TOSHIBA TC51V17405BST-60/70 PRELIMINARY 4,194,304 WORD X 4 BIT EDO HYPER PAGE DYNAMIC RAM Description The TC51V17405BSJ/BFT is an EDO (hyper page) dynamic RAM organized as 4,194,304 w ords by 4 bits. The TC51V17405BSJ/BFT utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit techniques to

BFX36

Abstract: 110H BFX81 BFY64 BFY84 BFT53 BFT54 BFT57 BFT58 BFT59
Contextual Info: Ô133107 4ÔE D G0G0451 SEMELABI 33S ISMLB SEMELAB LTD BI POLAR TRANSISTORS CECC AND HIGH REL & HIGH ENERGY Type Number Rei Code BFTW REQ REQ REQ HE HE HE HR HE HR HR HE HE HR HE HE EEQ REQ REQ HR HR REQ EEQ KEQ CECC HR KEQ EEQ EEQ EEQ EEQ REQ HE HR HK HE

BFX36

Abstract: 2N3904DCSM 2N3904D 2N3680 BFT39 2N2222ADCSM BFX11 BFY84 BLY11 BFT40
Contextual Info: 37E D SEMELAB LTD 31331B7 OOOODTb fl jl S E M E L A B MANUFACTURING! • c BS/CECC Polarity Package v CEO cont h F E BFT37 BFT39 BFT40 BFT41 BFT57 BS-0 BS-0 BS-0 BS-0 BS-0 PNP NPN NPN NPN NPN T039 T039 T039 T039 T018 100 80 60 50 160 5 1 1 1 0.2 50-200 250 typ

BF177

Abstract: BC312 BF178 BF179 2N4260 BC142 2N3576 BFT39 2N3829 BF338
Contextual Info: 7 Metal Can High Current NPN Amplifiers Case Outlines Maximum ratinas Device Type BFT39 BFT40 BFT41 BFY50 BFY51 BFY52 ¡5 o £L NPN NPN NPN NPN NPN NPN BV BV BV Case CBO CEO EBO ICM mA V V V T039 T039 T039 T039 T039 T039 90 70 60 80 60 40 80 60 50 35 30 20

NPN pnp MATCHED PAIRS 2n2905A 2N2219A

Abstract: BFR39 BFR80 BFR40 BS9300 BFR81 BC326 BFR79 TIS90 BFR62
Contextual Info: Silect Polarity General Purpose Transistors — Ic up to 800 mA Case Outlines Device Type case outline in brackets 2N3702 2N3703 2N3704 2N3705 2N3706 (1) (1) (1) (1) (1) TIS90 (1) TIS91 (1) PTOT Maximum ratings CEO V Cont IC A pk IC A Free Air @ 25‘C mW

C736

Abstract: C495 transistor bc303 equivalent 2N2222A 026 C735 bc143 equivalent bc143 C644 equivalent transistor 2N1711 transistor c633
Contextual Info: Metal Can 0-76 Case BV CBO V V V 30 25 25 15 15 13 3 3 3 0 -4 8 0 2N3570 2N3571 2N3572 *Tt i 4-95JÍ -12-7 h min I—-5 -3 Dimensions in mm NPN NPN NPN T072 T072 T072 Maximum ratin as BV BV CEO EBO hFE1 • mA min. max. f 50 50 50 5 5 5 150 200 300 1000 450

tc5118165bj

Abstract: TC5118165 TC5117405 SOJ42-P-400 TC5117405BSJ hidden refresh TSOP70-P-400 TC51181 TC5118 TOSHIBA TSOP50-P-400
Contextual Info: TOSHIBA TC5116405BSJ/BST-60 TC5116405BSJ/BST-70 PRELIMINARY 4,194,304 WORD X 4 BIT EDO DYNAMIC RAM Description The TC5116405BSJ/BST is the Hyper Page Mode (EDO) dynamic RAM organized as 4,194,304 words by 4 bits. The TC5116405BSJ/BST utilizes Toshiba’s CMOS Silicon gate process technology as well as advanced circuit techniques to provide wide

Contextual Info: • ^0^7 246 002Ô431 *îOÔ ■ - TC51V18325BJ/BFT-60/70 PRELIMINARY 524,288 WORD X 32 BIT EDO DYNAMIC RAM 16M DRAM Description TheTC51V18325BJ/BFT is the Hyper Page Mode (EDO) dynamic RAM organized 524,288 w ords by 32 bits. The TC51V18325BJ/BFT utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit techniques to

TC5118160B

Contextual Info: TOSHIBA clüi:î7E4fi 0 0 20 3 0 1 552 • TC5118160BJ/BFT-60/70 PRELIMINARY 1,048,576 WORD X 16 BIT FAST PAGE DYNAMIC RAM Description Features 16M The TC 5118160BJ/BFT is the fast page dynamic RAM organized as 1,048,576 w ords by 16 bits. The T C 51 18160BJ/BFT

BFR80

Abstract: BFR79 BFR81 BFT69 BFW32 700M BFQ37 BFQ38S BFR38 BFR52
Contextual Info: SEHELAB LTD 37E D • 6133157 DQQ0D5Q b « S U L B ~T~ 3 3 -Of , I •i Type No. Option''17 Polarlly Packa9 e v CEO hF E @ VC e / ' c fT PD PNP PNP PNP NPN PNP T039 T039 T072 T092 T092 300 250 35 20 80 0.2 1 20m 1 1 30-300 25min 25min 60min 50min 5 /10m 5 /50m