BS01130 Search Results

MMBTH10

Abstract: t-31-21 MMBTA92 MMBTH11 MPSH10 MPSH11 MPSW92 T3121 MPS-H10 national
Contextual Info: NATL SEMICOND HE DISCRETE D I bS01130 0Q37273 7 | National Semiconductor <n T -3 I-I7 £ IO < ro MPSA92 MPSW92 MMBTA92 I<o ro TO-236 SOT-23 TL/G/10100-5 PNP High Voltage Amplifier Electrical Characteristics Ta Symbol = 25°C unless otherwise noted Parameter

Contextual Info: NATL SEMICOND DISCRETE bflE D • bS01130 003^521 fiT3 » N S C S VcEQ(HSt) (Volts) Min 32 Devices Min BCW33 100 BCX58 100 NPN PMP BCX78 30 2N2222 mA NF (dB) Max Package I’ d (Amb) (mW) @25°C Max mA (MHz) Min 420 800 2.0 300 Typ 10 3.0 TO-236* 350 120

NATIONAL SEMICONDUCTOR catalog

Abstract: MMBF4119
Contextual Info: bflE ]> • bS01130 □ D 3 ciSDM 714 « N S C S JFET Ultra Low Input Current Amplifiers NATL SEMICOND DISCRETE N Channel V p @ V DS lD Device MMBF4117 PN4117 2N4118 MMBF4118 MMBF4119 2N4117A PN4117A 2N4118A (V) Mi« 40 40 40 40 40 40 40 40 ill b v gss 10

bc848 to 92

Abstract: 2n2222 surface mount 2N2222 T0-92 2n2222 national 2n2222 2N2222 t0 39 2N3704 NATIONAL SEMICONDUCTOR 2N3302 2N4123 2N6714
Contextual Info: NATL SEMICOND DISCRETE bflE T> • bS01130 003^521 & T3 General Purpose Amplifiers and Switches (continued) NSC 5 w ■o' D e v ic e s VcE0(n»l> (V o lts ) NPN 32 30 (dB ) Package I’ d (Amb) (m W ) M ax 3 0 0 Typ 10 3.0 TO -236* 350 2.0 125 10 6.0 T 0 -9 2 (9 7 )

IR 30 D1

Abstract: BAX17 FDH444 1N3070 1N625 1N626 1N627 1N628 1N629 1N658
Contextual Info: SEMICOND DISCRETE HE D | bS01130 High Voltage Diodes Glass Package Device No. Package No. Vrrm V Min 1N625 DO-35 30 * Ir nA @ Max Vr V VF V 1000 20 1.5 Min Max If mA Ü0 3 ? 0 a 2 T g T-01-01 C pF Max 4.0 •rr ns Max Test Cond. Proc. No. 1000 (Note 1)

MMBT4402

Abstract: 2N2907 SOT-23 tn2905 PN4121 TIS97 pn4122 TN2219A MARKING FY T0-92 2N2907 TO-92
Contextual Info: bflE T> m bS01130 □□3TS2D General Purpose Amplifiers and Switches continued Devices V CEO(sutt) 40 f*FE lc (Volts) Min lC Min Max mA PN3567 500 40 120 PN3569 500 100 TIS97 200 TN2219A 500 NPN PNP NATL SENICOND (DISCRETE) fT @ lc (mA) Max NF (dB) Max

LC 300-S

Abstract: 2N6717 MPS6717
Contextual Info: NATL S EM I C O N D H E DISCRETE D • bS01130 D0375b3 I 4 I | ' National Semiconductor Jl A 2N6717 I Ml - ro T'3 3 'OS M PS6717 T O -2 J 7 llllll BC TO -226AE TL/G/10100-8 TL/G/10100-4 NPN General Purpose Amplifier Electrical Characteristics ta = 25°c unless otherwise noted

TIS90

Abstract: MPS6566 TIS97
Contextual Info: NATL SEMICOND DISCRETE 22E D • bS01130 D03777M 7 ■ NPN General Purpose Transistors by Ascending Vceo (continued) • H,e Ft (MHz) Min Vceo (V) VCbo(V) Min Min Min Max (mA/V) PN5816 TIS90 TIS92 TIS97 TN2218A TN2219A 40 40 40 40 40 40 50 40 40 100 100

2N2210

Abstract: TIS92 TN2218A transistor 2N2210 2N3827 PN3694 TIS90 2N2270 2N2586 2N5962
Contextual Info: NATL SEMICOND DISCRETE 5SE D • bS01130 D037774 7 ■ NPN General Purpose Transistors by Ascending Vceo (continued) Vceo(V) Vcbo (V) Min Min Min Max (mA/V) PN5816 TIS90 TIS92 TIS97 TN2218A TN2219A 40 40 40 40 40 40 50 40 40 100 100 100 250 40 100 200 300

MMBT2904

Abstract: MMBT2904A MMBT3905 MMBT4916 MMBT3638A MMBT3702 MMBT3703 MMBT4402 MMBT4403 MMBT5143
Contextual Info: This s S S S ä d U C t o Surface Mount Transistors r General Purpose Amplifiers and Switches—PNP VCBO* VcEO VEB0 V (V) (V) Min Min Min By 40 5 MMBT2904A TO-236 (49) 60 40 5 MMBT2905 TO-236 (49) 60 40 5 MMBT2905A TO-236 (49) 60 40 5 MMBT2906 TO-236 (49)

J111 national

Abstract: J112 J113 25CC J111 MMBFJ111 MMBFJ112 MMBFJ113 MARK 6C SOT-23 k20a
Contextual Info: S e m i c o n d u c t o r " J111 J112 J113 G MMBFJ111 MMBFJ112 MMBFJ113 T O -9 2 D M ark: 6 P / 6 R / 6 S N-Channel Switch T his device is designed for low level analog switching, sample and hold circuits and chopper stabalized amplifiers. Sourced from Proce ss 51.

diode 8109

Abstract: DDH0312 NDB7061L NDP7061L W9 diode
Contextual Info: MCE N a t i o n a l Semiconductor • J u n e 1996 " NDP7061L/ NDB7061L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These logic level N-Channel enhancement mode power field effect transistors are produced using

NPN RF Amplifier

Abstract: y-parameter MMBTH20 MPSH20 U407
Contextual Info: MPSH201MMBTH20 Discrete POW ER & Signal Technologies National S e m i c o n d u c t o r “ MMBTH20 MPSH20 NPN RF Transistor T h is d e v ic e is d e s ig n e d for g e n e ra l R F am plifier a n d m ixer ap p lica tio n s to 25 0 M H z w ith co lle cto r curren ts in the 1.0 m A

027Q

Abstract: NDS336P
Contextual Info: M ay 1996 National & Semiconductor PRELIMINARY NDS336P P-Channel Logic Level Enhancement Mode Field Effect Transistor Features General Description These P-Channel lo g ic level enhancem ent m ode pow er fie ld effect tran sisto rs are produced using N ationals proprietary, high cell density, DMOS

27E SOT-23

Abstract: 27E 9 sot23 CK200 501MT BCW68G T092
Contextual Info: BCW68G ^ Discrete POWER & Signal Technologies Æ^m N a t i o n a l Semiconductor' BCW68G PNP General Purpose Amplifier This device is designed for general purpose amplifier and switching applications at currents to 500 mA. Sourced from Process 63. A b s o lu t e

MMBF4119

Abstract: PN4118 MMBF4117 MMBF4118 PN4117 PN4119
Contextual Info: e? S e m i c o n d u c t o r " PN4117 PN4118 PN4119 MMBF4117 MMBF4118 MMBF4119 SOT-23 Mark: 6 1 A /6 1 C /6 1 E N-Channel Switch T h is d e v ic e is d e sig n e d for low current D C an d a u d io app licatio ns. T h e s e d e v ic e s p rovide ex ce lle n t p erform an ce a s input s ta g e s for

FDS01503

Abstract: FDS01403 1n457a equivalent 1n625 equivalent FDS01502 1N457A J 1N3070 equivalent FDS01401 FDS01501 1N459 equivalent
Contextual Info: This Material National Semiconductor Surface Mount Diodes <S> m 2 t-i General Purpose & Specialty Diodes O Device Description Pkg. No. Pin Out Bv V Min •r (nA) @ Max Vr V Vf <V> Max If mA mA C PF Max to­ ns Max Test Cond. FDS01000 FAMILY Proc. Family

NDT452P

Contextual Info: National Semiconductor" June 1996 NDT452P P-Channel Enhancement Mode Fi Effect Transistor Features General Description These P-Channel enhancem ent m od e p o w e r field effect transistors are produced using N ational's proprietary, h ig h cell density, DMOS tech no lo g y.

NDT2955

Abstract: ACAA TRANSISTOR
Contextual Info: June 1996 Nat ionaI Sem iconductor" NDT2955 P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel enhancem ent m od e p o w e r field effect tran sisto rs are produced using N ational's proprietary, high cell density, DMOS te chnology. This

NDP506A

Abstract: zener diode 4B3 NDB506B NDB506A NDP506B
Contextual Info: National Semiconductor M a y 19 95 " NDP506A / NDP506B NDB506A / NDB506B N-Channel Enhancement Mode Field Effect Transistor General Description These N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.

Tf 227

Abstract: MMBT2369A MMPQ2369 PN2369A SOIC-16
Contextual Info: PN2369A MMBT2369A MMPQ2369 Discrete P O W E R & S ig n a l Technologies National I Semiconductor' MMPQ2369 MMBT2369A I PN2369A SOT-23 B SOIC-16 Mark: 1S NPN Switching Transistor T h is d e v ic e is d e s ig n e d for high s p e e d saturatio n sw itching a t collector

MMBT2907A

Abstract: MMPQ2907 NMT2907 PN2907A PZT2907A T092
Contextual Info: PN2907A I MMBT2907A / MMPQ2907/ NMT2907 I PZT2907A D iscrete P O W E R & S ig n a l Technologies National e t S e m i c o n d u c t o r ' " MMBT2907A PN2907A SOT-23 PZT2907A B SOT-223 Mark: 2F NMT2907 MMPQ2907 SOIC-16 ° PNP General Purpose Amplifier This device is designed for use as a general purpose amplifier

biss 0001

Abstract: NDH832P 006CI
Contextual Info: J k J National S emi co n d u c t o r " NDH832P P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.

NDS8435

Contextual Info: & N a t io nal Semiconductor" M ay 19 96 NDS8435 Single P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.