TN2905 Search Results

TN2905A

Abstract: PN2907A
Contextual Info: TN2905A Discrete P O W E R & S ig n a l Technologies National Semiconductor"' TN2905A PNP General Purpose Amplifier T h is d e v ic e is d e s ig n e d fo r u s e a s a g e n e ra l purp o se am p lifie r a n d sw itch requiring colle cto r c u rren ts to 5 0 0 m A , S o u rc e d from

TN2905A

Abstract: TN-29-07 CBVK741B019 F63TNR PN2222N PN2907A TN2907A TN2905
Contextual Info: TN2905A TN2905A TN2907A C TO-226 B E PNP General Purpose Amplifier This device is designed for use as a general purpose amplifier and switch requiring collector currents to 500 mA. Sourced from Process 63. See PN2907A for characteristics. Absolute Maximum Ratings*

TN2905A

Abstract: PN3638 PN3638A PN3644 PN3645 PN4143 TIS93
Contextual Info: This I Material u~ Ln □ fc-1 t-1 ÜJ □ □ PNP General Purpose Amplifiers and Switches V Device No. Case Style Copyrighted □ j: □ PN3638 jr TO-92 92 CBO V CEO V 1 'c e s EBO (V) Min (V) Min (V) Min 25 25 4 * V V CE(SAT) 'C B 0 @ V CB PN3638A TO-92

2N4355

Abstract: 2N5139 2N3644 2N4121 TN2904A NS4234 TIS91 2N3638A 50113g 2N4354 T-12
Contextual Info: NATL S E M IC O N D { D I S C R E T E ! ifi DE | This Material Copyrighted By Its Respective Manufacturer b S 0 1 1 3 0 0 0 3 S M M 3 7 f ” NATL S E M IC O N D NATL SEMICOND, s Tut Conditions CO CD 8 o £ 2 Q. CM CO CO o o O O o o 2fl D F | t S D 1 1 3 D

2N2907a national

Abstract: 2N2222A TO-92 2N2907A TO-92 2N4401 NATIONAL SEMICONDUCTOR NPN transistor 2N2222A in T0-92 package Transistor 2N2222A transistor 2N3725 2N2904A 2N2905A 2N2907A
Contextual Info: bôE T> m bS 0 1 1 3 G □DB'iSe'i c m NATL S E M I C O N D Devices VtEOtsusti Volts Min NPN (ns) Max mA bpE @ l( Mia mA VcE(sat)@lc& (Volts) Max mA mA *T (MHz) Min Package PD (Amt) (mW) @25°C 45 100 150 40 150 0.4 150 15 200 TO-39 600 2N2905A 45 100 150

T1P42C

Contextual Info: TO-220 PIN CONFIGURATION 1. BASE 2 . COLLECTOR 3. EMITTER 4. COLLECTOR c DIM E ,01 0 -I A B C D E F G H J K L M N 3 G MIN MAX 14,42 9,63 3,56 16.51 10,67 4,83 0,90 1,40 3,88 2,79 3,43 0,56 14,73 6,35 2,92 - 1,15 3,75 2,29 2,54 12,70 - 2,03 - 7 31,24 DEG TO-220 Power Package Transistors NPN

MPSD05

Abstract: MPSA05 MPSA06 MPSA55 MPSA56 MPSD55 MSB492 PN2221 PN2221A PN2906
Contextual Info: Medium Power Amplifiers and Switches TYPE POLA­ NO. RITY MPSA05 MPSA06 MPSA55 MPSA56 MPSD05 N N P P N MAXIMUM RATINGS CASE TO-92A TO-92A TO-92A TO-92A TO-92A Pd IC VCEO mW (A) (V) 625 625 625 625 350 0.5 0.5 0.5 0.5 0.5 60 80 60 80 25 HFE min 50 50 50 50

2N6706

Abstract: 2n6730 tn2905 CSC1573 MPSW13 2N6705 2N6707 2N6711 cil916 2N6713
Contextual Info: TO-237 DIM A B C D E F G H K L MIN 4,32 4,45 3,18 0,41 0,35 1,14 12,70 5.DEG MAX 5,33 5,20 4,19 0,55 0,50 0,55 1,40 2,54 - A L L DIM EN SIO N S A R E IN M.M. L L PIN CONFIGURATION AVAILABLE IN TO-237 CDIL Code Style 3 TO-237 PIN 1 PIN 2 PIN 3 Emitter Base

CTN640

Abstract: CSA1013R CSA1013Y CSA931 CSA931R CSA931Y CTN369 CTN491 CTN492 CTN493
Contextual Info: TO-237 PLASTIC PACKAGE TRANSISTORS PNP M axim um R atin gs Type Electrical Characteristics (Ta=25°C, U n le ss Otherw ise Specified) @ ^CBO ^CEO ^EBO P0 (V) Min (V) Min (V) Min (W) @ Tc-25°c CSA10130 160 160 6 0.9 1 1 150 100 200 200 5 1.5 500 35 15 CSA1013R

SSP35n03

Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
Contextual Info: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A

D43C8

Contextual Info: Discrete POWER & Signal Technologies PNP Saturated Switches Device No. 2N5771 PN3640 PN4258 ST5771-1 TN3467A Case Style VCBO VCEO VEBO V Min (V) Min (V) Min TO-92 (92) 15 15 4.5 TO-92 (92) 12 TO-92 (92) 12 TO-92 (92) 15 TO-226 (99) 40 12 12 15 40 4 4.5 4.5

2n2907 TO-92

Abstract: BC337 hie hre hfe bc337 hie c237a C714B BC337 hoe 2N3702 NATIONAL SEMICONDUCTOR C2371 C2379 hie for bc337
Contextual Info: Process National Semiconductor 3 S o -(pS 2_ 63 PNP M edium Row ^ 12. ( 2 13 2 1 Uj- D ESC R IPT IO N 3.020 Process 63 is a non-overlay, double-diffused, si I epitaxial device. Complement to Process 19. A PPLIC A T IO N This device was designed for use as general pure

BC337/BC327

Abstract: BC182 BC547 BC237 NATIONAL SEMICONDUCTOR BC327 NATIONAL SEMICONDUCTOR T0-92 BC547 to92 BC237 national 2N4032 2N6554 PN2907A
Contextual Info: •c NATL 50 45 mA Max Min Max 2N4032 1000 100 300 2N6554 NPN 60 SEniCOND (DISCRETE ) (Volts) Min PNP NF (dB) Max 372 • NSCS P d (Arnb) Package (mW) @25°C mA (MHz) Min mA 100 150 50 TO-39 800 1500 80 300 50 75 50 T0-202(55) 1333 MMBT2907A 600 100 300

2N2369 SOT-23

Abstract: pn4122 2N708 NPN switching transistor 2N4403 2N3467 2N3905 2N3906 2N4402 2N4403 MMBT3906
Contextual Info: böE ]> • bsoii3 ü 003*1530 aob High Speed Saturateci Switching Transistors continueai ' l*re@lc PMP /IV VC£(sat @(C & mA (MHz) Min Package mA 15 300 T0-237(91) 850 m ft Min mA (Volts) Max 285 150 100 150 0.3 150 !" NPN (ns) Max W (Volts) Min rrM T/-AU R

MMBT4402

Abstract: 2N2907 SOT-23 tn2905 PN4121 TIS97 pn4122 TN2219A MARKING FY T0-92 2N2907 TO-92
Contextual Info: bflE T> m bS01130 □□3TS2D General Purpose Amplifiers and Switches continued Devices V CEO(sutt) 40 f*FE lc (Volts) Min lC Min Max mA PN3567 500 40 120 PN3569 500 100 TIS97 200 TN2219A 500 NPN PNP NATL SENICOND (DISCRETE) fT @ lc (mA) Max NF (dB) Max

Contextual Info: PNP Transistors * D is c r e te P O W E R & S ig n a l T e c h n o lo g ie s National p^p s e m i c o n d u c t o r v D evice No. 2N4402 2N4403 Case Style TO-92 92 TO-92 (92) ¥ cbo v v CEO v V EBO (V) Min (V) Min (V) Min 40 40 5 40 40 *CBO M ax Q e h FE

1N4548

Abstract: 1N4008 Diode 1N4008 1N4008 diode 1N1744A 1n4148 1N523b 2N4418 BAX15 1n5428
Contextual Info: Discrete POWER & Signal Technologies Diode Cross-Reference Guide Industry Part Number 1N100 1N100A 1N101 1N102 1N103 1N104 1N108 1N111 1N112 1N113 1N114 1N115 1N116 1N116A 1N117 1N1170 1N117A 1N118 1N118A 1N119 1N120 1N126 1N126A 1N127 1N127A 1N128 1N128A

2N3702 NATIONAL SEMICONDUCTOR

Abstract: 2N4917 2n5354 national semiconductor 2n3644 national semiconductor 2N4121 2N5143 MP03906 TIS92 2N3638A 2N3644
Contextual Info: Case Style VcBO V Min VCEO (V) Min Vebo (V) Min 2N2904 TO-5 60 40 5 Ices * Icbo @ Vcb (nA) (V) Max 20 50 By Its 2N2904A TO-5 60 60 40 5 5 10 20 50 50 Manufacturer also Avail. JAN/TX/V Versions 2N2905A also Avail. JAN/TX/V Versions TO-5 2N2906 TO-18 60 60

Contextual Info: b u r r - brown corp HE ] I 1? 313Li5 0014057 1 | T O H I-i \ XTR110 B U R R -B R O W N a 1 XTR110 [ APPLICATIO N S • 4mA TO 20mA TRANSMITTER • SELECTABLE INPUT/OUTPUT RANGES: OV to + 5 V , OV to + 1 0 V Inputs OmA to 20mA, 5mA to 25mA Outputs Other Ranges