PN4143 Search Results

Contextual Info: SEMICONDUCTOR -u PN4143 . ;^C* C< \ TO-92 Be PNP General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 500 mA. Sourced from Process 63. See PN2907A for characteristics. Absolute Maximum RatinQS

Contextual Info: TO-92 Plastic Package Transistors PNP Electrical Characteristics (Ta=25’C, Unless Otherwise Specified) Maximum Ratings Type No. PN4143 ^cao (V) Min 60 V CEO ^EBO (V) Mm (V) Min 40 5 PD (W) 0Tc=25’c 0.625 'cso Vcb *CES m VCE " fe 9 (V) (MA) a (v) Max

Contextual Info: SEM ICONDUCTOR ¡m PN4143 PNP General Purpose Amplifier T h is d e v ic e is d e s ig n e d for u s e a s g e n e ra l p u rp o s e a m p lifiers a n d s w itc h e s req uirin g c o lle c to r c u rre n ts to 5 0 0 m A . S o u rc e d from P ro c e s s 6 3 . S e e P N 2 9 0 7 A fo r c h a ra c te ristics .

CBVK741B019

Abstract: F63TNR PN2222N PN2907A PN4143
Contextual Info: PN4143 C TO-92 BE PNP General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 500 mA. Sourced from Process 63. See PN2907A for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted

PN4249

Abstract: PN5447 PN5143 PN4143 PN4248 PN4250 PN4250A PN4354 PN4356 PNS142
Contextual Info: TO-92 Plastic Package Transistors PNP Electrical Characteristics (Ta=25”C, U nless Otherwise Specified) Maximum Ratings Type No. CBO CEO EBO (V) (V) (V) Min Min Min 40 PN4143 Pd (W) (A) @Tc=25°c 0.625 I CBO (ma) Max V CB (V) (mA) Max @ (V) Min 0.6

PN2907A

Abstract: PN4143
Contextual Info: PN4143 C TO-92 BE PNP General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 500 mA. Sourced from Process 63. See PN2907A for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted

Contextual Info: I LSQ1130 PNP General Purpose Amplifiers and Switches V 0040472 Device No. PN3638 Ob? PN3638A PN3644 PN3645 PN4143 TIS93 TN2905A Case Style TO-92 92 TO-92 (92) TO-92 (92) TO-92 (92) TO-92 (92) CB O V CEO V EB O (V) Min (V) Min (V) Min 25 25 4 25 45 60 60

Contextual Info: PN4143 Transistors Si PNP LP HF BJT Military/High-RelN V BR CEO (V)40 V(BR)CBO (V)60 I(C) Max. (A)200m Absolute Max. Power Diss. (W)625m Maximum Operating Temp (øC)140þ I(CBO) Max. (A)50n÷ @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.300 h(FE) Max. Current gain.

Contextual Info: TO-92 Plastic Package Transistors PNP Maximum Ratings Type No. PN4142 PN4143 Electrical Characteristics <Ta=25”C, U n ie » Otherwise Specified) ^C80 ^CEO ^EBO Pd (W) (V) (A) (V) (V) Min Min Min @Tc=25"( 60 60 40 40 5 'c & ^CE 'cBO VCB 'ces ^CE I>fe (mA) (V)

PN4143

Abstract: PN2907A
Contextual Info: S E M IC O N D U C T O R ¡m PN4143 PNP General Purpose Amplifier T h is d e v ic e is d e s ig n e d for use as g e n e ra l p u rp o se a m p lifie rs an d s w itc h e s re q u irin g c o lle c to r c u rre n ts to 5 0 0 mA. S o u rce d fro m P roce ss 63. S ee P N 2 9 0 7 A fo r c h a ra cte ristics.

TN2905A

Abstract: PN3638 PN3638A PN3644 PN3645 PN4143 TIS93
Contextual Info: This I Material u~ Ln □ fc-1 t-1 ÜJ □ □ PNP General Purpose Amplifiers and Switches V Device No. Case Style Copyrighted □ j: □ PN3638 jr TO-92 92 CBO V CEO V 1 'c e s EBO (V) Min (V) Min (V) Min 25 25 4 * V V CE(SAT) 'C B 0 @ V CB PN3638A TO-92

2N4355

Abstract: 2N5139 2N3644 2N4121 TN2904A NS4234 TIS91 2N3638A 50113g 2N4354 T-12
Contextual Info: NATL S E M IC O N D { D I S C R E T E ! ifi DE | This Material Copyrighted By Its Respective Manufacturer b S 0 1 1 3 0 0 0 3 S M M 3 7 f ” NATL S E M IC O N D NATL SEMICOND, s Tut Conditions CO CD 8 o £ 2 Q. CM CO CO o o O O o o 2fl D F | t S D 1 1 3 D

pn2222

Abstract: pn2907 NSDU01 2N4125 TN2219 "device marking" BC213 BC214 MPSW01A MPSW51A
Contextual Info: VCEO smt (Volts) Min 30 Devices PNP Nf>N M PSW 01A M PSW 51A NSDU01 if t iiliilS l: ; . ' •" . • ••• fr@ l h f j O lc •c (m A) Max mA (MHz) NF Package P D(ftnfe) (<nW) Max Min 1000 50 1000 50 50 TO-226 1000 1000 60 100 50 50 T0-202(55) 1333 Min

c546b

Abstract: c557b of bc 237 b C547B c558b BC 9014 ba W61C c 557b 082BC w61b
Contextual Info: NPN General Purpose Amplifiers & Switches Device No. [Mark] B C W65C [ED ] Case Style TO-236 49 V CEO (V) Min 32 B C X 58 TO-92 (97) 32 BSR14 [U8] TO-236 (49) 40 V CBO VCES* (V) Min 60 75 V EBO (V) Min 5 I CBO ICES* (nA) Max 20* @ VCB (V) 32 TO-236 (49)

thermistor KSD201

Abstract: IRF power mosfets catalog Complementary MOSFETs buz11 BZX85C6V8 SPICE MODEL Diode 1N4001 50V 1.0A DO-41 Rectifier Diode K*D1691 make SMPS inverter welding machine transistor KSP44 1N5402 spice model tip122 tip127 mosfet audio amp
Contextual Info: Fairchild Semiconductor Product Catalog 2004 Microcontrollers Optoelectronics Across the board. Around the world. Analog Discrete Interface & Logic Interface & Logic Discrete Power Optoelectronics Analog & Mixed Signal Fairchild Semiconductor, The Power Franchise™

T092

Abstract: T0-92 D 92 M pn2222 national semiconductor TN2219 NSDU01 MPSW01A national 2N4125 MPSW01A MPSW51A
Contextual Info: m bfiF D bSOHBD General Purpose Amplifiers and Switches continued Devices VC0Hsa*t) (Volts) Min 30 NPN M PSW 01A PNP M PSW 51A •c (mA) Max Min Max NATL SENICON]) (DISCRETE) fT @ l Hre@ lc DDBTSSE 73T M N S C S B„j" », T mA (MHz) Min ‘M Ì NF (dB)

cs9011j

Abstract: MPS151 PN5180 MPS4424 BC5608 8c527-25 2N3304 BC5568 PN2897 MPS9633C
Contextual Info: CRIMSON SEMICONDUCTOR INC TT DE | 5 5 1 4 0 ^ 2 5 1 4 0 9 6 C R I M S O N S E M I C O N D U C T O R INC D T 99D 00293 DEVICF TYPE PACKAGE By.CEO BVCBO BVEBO ICBO @ VCB IV I M iN IV ! M .N . UN i- A l M Ah |V D0D0ET3 0 6 / - HFE @ VC & iC M Ah .V t—"A •

MMBT3905

Abstract: MMBT2904 2N2906 to-92 2N1132A LM3661TL-1.40 2N2907 PNP Transistor to 92 2N3906 MPS3905 s2e transistor transistor 2N2905
Contextual Info: NATL SEMICOND DISCRETE SEE 3> • b501130 0037777 2 ■ T^27~0J PNP General Purpose Transistors by Ascending Vceo (continued) V Ceo(V) V cbo(V) Min Min BCF29 BCF30 BCW 61A 32 32 32 2N1132A 2N2904 2N2905 2N2906 2N2907 2N3905 2N3906 2N4037 2N4402 2N4403 2N5365

FQPF*7N65C APPLICATIONS

Abstract: bc548 spice model bf494 spice model spice model bf199 LM3171 BC517 spice model bc547 spice model BF494 spice MOC3043-M spice model SPICE model BC237
Contextual Info: Fairchild PSG.book Page i Wednesday, July 28, 2004 11:12 AM Fairchild Semiconductor Product Catalog Rev. 1 Analog & Mixed Signal Discrete Power Interface & Logic Microcontrollers Optoelectronics RF Power Front Matter.fm Page ii Monday, August 2, 2004 10:09 AM

SSP35n03

Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
Contextual Info: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A

D43C8

Contextual Info: Discrete POWER & Signal Technologies PNP Saturated Switches Device No. 2N5771 PN3640 PN4258 ST5771-1 TN3467A Case Style VCBO VCEO VEBO V Min (V) Min (V) Min TO-92 (92) 15 15 4.5 TO-92 (92) 12 TO-92 (92) 12 TO-92 (92) 15 TO-226 (99) 40 12 12 15 40 4 4.5 4.5

BF441

Abstract: BF440 224AA G-T40N KT361 A5T3906 BFW90 LOW-POWER SILICON PNP 75n80 2N601
Contextual Info: RF LOW-POWER SILICON PNP Item Number Part Number V BR CEO 5 10 2N3905 2N5382 BC126A BC126A BC126A BSX36 PH2907R SOR2907 (A) HSE402 MMBT4403 MMBT440~ 15 20 25 30 MMBT4403 A5T4403 2N4403 SF106 P2N2907 MPS6517 TMPT2907 TMPT4403 A5T3905 SF222 SF322 2N4143 B5W75

MPSA92(KSP92) equivalent

Abstract: BC214L equivalent MMBT3646 ss8550 TN6727A SS8050 KSP2222A equivalent MMBT5771 MPSA18 BC550 BC369
Contextual Info: Discrete Small Signal General Purpose Products VCEO V VCBO (V) VEBO (V) IC hFE Saturation Voltage Max (A) Min Max @VCE (V) @IC (mA) VCE (sat) (V) @IC (mA) @IB (mA) SOT-223 NPN Configuration BCP68 20 30 5 1 85 375 1 500 0.5 1 100 FZT649 25 35 5 3 100 300

BD373

Abstract: 2n 2222A 3904 NSDU55 National Semiconductor Discrete devices catalog ITT+Semiconductors+saj+300+t BC560 NSDU05
Contextual Info: v CE0 iMt (V e its ) M in too D e vice s KPN 2N 6730 * M « •M M M c (M H t) : .; mA 5 — PD (Amb) (m W ) 925°C 1000 80 250 50 75 100 T 0 -2 0 2 (5 5 ) 1333 1000 50 250 250 50 200 T O -237(91) 850 250 50 200 T 0 -2 0 2 (5 5 ) 2000 150 100 50 TO -39 800