BCP68 Search Results

SBCP68

Abstract: SBCP68T1G bcp68t1g
Contextual Info: BCP68T1G, BCP68T1G NPN Silicon Epitaxial Transistor This NPN Silicon Epitaxial Transistor is designed for use in low voltage, high current applications. The device is housed in the SOT−223 package, which is designed for medium power surface mount applications.

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD BCP69 PNP EPITAXIAL SILICON TRANSISTOR PNP MEDIUM POWER TRANSISTOR FEATURES * High current max. 1 A * Low voltage (max. 20 V). * Complementary to UTC BCP68 1 SOT-223 APPLICATIONS * General purpose switching and amplification

NPN SOT23-6

Abstract: ZDT1049 DUAL NPN SOT23-6 zdt6790 fzt849 WDFN3 BCP6825 ZXTBM322 sot223 transistor sot23
Contextual Info: Zetex Device BCP6825 BCP6925 BCV27 BCW66H BCW68H BCX17 BCX19 BCX6825 BCX6916 BCX6925 FCX1047A FCX1051A FCX1147A FCX1149A FCX1151A FCX491A FCX589 FCX591A FCX617 FCX619 FCX688B FCX690B FCX717 FCX718 FCX789A FCX790A FMMT449 FMMT489 FMMT491A FMMT549 FMMT549A FMMT589

Contextual Info: ON Semiconductort BCP68T1 NPN Silicon Epitaxial Transistor ON Semiconductor Preferred Device MEDIUM POWER NPN SILICON HIGH CURRENT TRANSISTOR SURFACE MOUNT This NPN Silicon Epitaxial Transistor is designed for use in low voltage, high current applications. The device is housed in the

Contextual Info: BCP68T1 Preferred Device NPN Silicon Epitaxial Transistor This NPN Silicon Epitaxial Transistor is designed for use in low voltage, high current applications. The device is housed in the SOT−223−4 package, which is designed for medium power surface mount applications.

Contextual Info: BCP68T1G NPN Silicon Epitaxial Transistor This NPN Silicon Epitaxial Transistor is designed for use in low voltage, high current applications. The device is housed in the SOT−223 package, which is designed for medium power surface mount applications. Features

Contextual Info: BCP69. PNP Silicon AF Transistor • For general AF applications • High collector current 4 3 2 • High current gain 1 • Low collector-emitter saturation voltage • Complementary type: BCP68 NPN Type Marking Pin Configuration Package BCP69-16 .-16*

BCP69

Abstract: BCP69 ic
Contextual Info: PART OBSOLETE - USE FZT589 SOT223 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR BCP69 ISSUE 3 – FEBRUARY 1996 ✪ FEATURES * For AF drivers and output stages * High collector current and Low VCE sat COMPLEMENTARY TYPE – BCP68 PARTMARKING DETAIL – BCP69 BCP69 – 25

Contextual Info: UNISONICTECHNOLOGIESCO., LTD BCP68 NPN SILICON TRANSISTOR N PN M EDI U M POWER T RAN SI ST OR ̈ FEAT U RES * High current max. 1 A * Low voltage (max. 20 V). * Complementary to UTC BCP69 1 SOT-223 ̈ APPLI CAT I ON S * General purpose switching and amplification under high current

BC817 sot package sot-23

Abstract: AE SOT89
Contextual Info: 94 Surface Mount Devices General Purpose Transistors hFE Ratings Type Package v CEO V •c VCBO V mA v CE sat min./max, at Iq /V qe mA/V max. at !(;/% V mA/mA h typ MHz Pinout See Section VII NPN BC868 BCP68 BC818-16 BC818-25 BC818-40 SOT-89 SOT-223 SOT-23

Contextual Info: DISCRETE SEMICONDUCTORS BITÂ S y iI T BCP68 NPN medium power transistor Product specification Supersedes data of 1997 Apr 09 Philips Sem iconductors 1999 Apr 08 PHILIPS Philips Semiconductors Product specification NPN medium power transistor BCP68 FEATURES

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD BCP68 NPN SILICON TRANSISTOR NPN MEDIUM POWER TRANSISTOR „ FEATURES * High current max. 1 A * Low voltage (max. 20 V). * Complementary to UTC BCP69 „ 1 SOT-223 APPLICATIONS * General purpose switching and amplification under high current

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BCP68T1 NPN Silicon Epitaxial Transistor Motorola Preferred Device This NPN Silicon Epitaxial Transistor is designed for use in low voltage, high current applications. The device is housed in the SOT-223 package, which is designed for

Contextual Info: Not Recommended for New Design Please Use FZT489 SOT223 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR BCP68 ISSUE 3 – FEBRUARY 1996 ✪ FEATURES * Suitable for AF drivers and output stages * High collector current and Low VCE sat COMPLEMENTARY TYPE – BCP69

Contextual Info: SOT223 PIMP SILICON PLANAR MEDIUM POWER TRANSISTOR ISSUE 3 - FEBRUARY 1996 FEATURES * For AF d riv e rs and o u tp u t stages 4 H igh c o lle c to r c u rre n t a nd Lo w Vr&1 C O M PLEM ENTARY TYPE BCP68 PARTM ARKING DETAIL BCP69 BCP69 - 25 ABSOLUTE MAXIMUM RATINGS.

rvb 602

Abstract: BCP68T1 BCP68T3 BCP69T1 SMD310
Contextual Info: MOTOROLA Order this document by BCP68T1/D SEMICONDUCTOR TECHNICAL DATA BCP68T1 NPN Silicon Epitaxial Transistor Motorola Preferred Device This NPN Silicon Epitaxial Transistor is designed for use in low voltage, high current applications. The device is housed in the SOT-223 package, which is designed for

bcp68

Contextual Info: BCP68 SOT-223 Transistor NPN 1. BASE SOT-223 2. COLLECTOR 1 3. EMITTER Features — — — — — For general AF applications High collector current High current gain Low collector-emitter saturation voltage Complementary type: BCP69 (PNP) MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

BCP68

Abstract: BCP69 BCP69-16 BCP69-25
Contextual Info: BCP69. PNP Silicon AF Transistor • For general AF applications 4 • High collector current 3 2 • High current gain 1 • Low collector-emitter saturation voltage • Complementary type: BCP68 NPN • Pb-free (RoHS compliant) package 1) • Qualified according AEC Q101

Contextual Info: UNISONICTECHNOLOGIESCO., LTD BCP69 PNP SILICON TRANSISTOR PN P M EDI U M POWER T RAN SI ST OR ̈ FEAT U RES * High current max. 1 A * Low voltage (max. 20 V). * Complementary to UTC BCP68 ̈ APPLI CAT I ON S * General purpose switching and amplification

MPSA92(KSP92) equivalent

Abstract: BC214L equivalent MMBT3646 ss8550 TN6727A SS8050 KSP2222A equivalent MMBT5771 MPSA18 BC550 BC369
Contextual Info: Discrete Small Signal General Purpose Products VCEO V VCBO (V) VEBO (V) IC hFE Saturation Voltage Max (A) Min Max @VCE (V) @IC (mA) VCE (sat) (V) @IC (mA) @IB (mA) SOT-223 NPN Configuration BCP68 20 30 5 1 85 375 1 500 0.5 1 100 FZT649 25 35 5 3 100 300

BCP68T1

Abstract: BCP68T3 BCP69T1 SMD310 motorola transistor dpak marking
Contextual Info: MOTOROLA Order this document by BCP68T1/D SEMICONDUCTOR TECHNICAL DATA BCP68T1 NPN Silicon Epitaxial Transistor Motorola Preferred Device This NPN Silicon Epitaxial Transistor is designed for use in low voltage, high current applications. The device is housed in the SOT-223 package, which is designed for

Contextual Info: BCP68-25 NPN Silicon AF Transistor • For general AF applications • High collector current 4 3 2 • High current gain 1 • Low collector-emitter saturation voltage • Complementary type: BCP69 PNP Type BCP68-25 Marking * 1=B Pin Configuration 2=C 3=E

Contextual Info: BCP69 PNP Silicon AF Transistor • For general AF applications 4 • High collector current • High current gain • Low collector-emitter saturation voltage 3 • Complementary type: BCP68 NPN 2 1 Pin Configuration VPS05163 Type Marking Package BCP69

BCP68

Abstract: BCP68-25 BCP69 BP317
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D087 BCP68 NPN medium power transistor Product specification Supersedes data of 1997 Apr 09 1999 Apr 08 Philips Semiconductors Product specification NPN medium power transistor BCP68 PINNING FEATURES • High current max. 1 A