BCW66H Search Results

BCW66F

Abstract: BCW66G BCW66H BCW68F BCW68H
Contextual Info: BCW66F . BCW66H BCW66F . BCW66H Surface Mount General Purpose Si-Epi-Planar Transistors Si-Epi-Planar Universaltransistoren für die Oberflächenmontage NPN NPN Version 2006-07-31 Power dissipation – Verlustleistung 1.1 2.9 ±0.1 0.4 Plastic case Kunststoffgehäuse

NPN SOT23-6

Abstract: ZDT1049 DUAL NPN SOT23-6 zdt6790 fzt849 WDFN3 BCP6825 ZXTBM322 sot223 transistor sot23
Contextual Info: Zetex Device BCP6825 BCP6925 BCV27 BCW66H BCW68H BCX17 BCX19 BCX6825 BCX6916 BCX6925 FCX1047A FCX1051A FCX1147A FCX1149A FCX1151A FCX491A FCX589 FCX591A FCX617 FCX619 FCX688B FCX690B FCX717 FCX718 FCX789A FCX790A FMMT449 FMMT489 FMMT491A FMMT549 FMMT549A FMMT589

BCW65A

Abstract: BCW65B BCW65BR BCW66H BCW65 BCW65C BCW65CR BCW66F BCW66FR BCW66G
Contextual Info: BCW65 BCW66 SOT23 NPN SILICON PLANAR MEDIUM POWER TRANSISTORS ISSUE 3- AUGUST PARTMARKING 1995 DETAILS EA BCW65A13 - BCW65B - EB BCW65BR - 5V BCW65C - EC BCW65CR - 6V 7P BCW65A - EF BCW66FR - BCW66G - EG BCW66GF - 5T BCW66H - EH BCW66HF - 7M TYPES BCW65 -

Contextual Info: MCC BCW66H
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components Features NPN Small l Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 l Ideally Suited for Automatic Insertion

marking eh

Contextual Info: MCC BCW66H
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features NPN Small l Ideally Suited for Automatic Insertion l 150oC Junction Temperature l Low Current, Low Voltage l Epitaxial Planar Die Construction

100MHZ

Abstract: BCW66H
Contextual Info: RECTRON BCW66H SEMICONDUCTOR TECHNICAL SPECIFICATION SOT-23 BIPOLAR TRANSISTORS TRANSISTOR NPN FEATURES * Power dissipation PCM : 0.2 W (Tamb=25OC) * Collector current ICM : 0.8 A * Collector-base voltage V(BR)CBO : 75 V * Operating and storage junction temperature range

bcw66h

Contextual Info: BCW66F . BCW66H BCW66F . BCW66H Surface Mount General Purpose Si-Epi-Planar Transistors Si-Epi-Planar Universaltransistoren für die Oberflächenmontage NPN NPN Version 2006-07-31 Power dissipation – Verlustleistung 2.9 1.1 ±0.1 0.4 Plastic case Kunststoffgehäuse

BC817

Abstract: BC817-25-6BZ BC818-40-6GZ BC818C BC817-40-6CZ BC818
Contextual Info: PART OBSOLETE - USE BCW66H BC817 BC818 SOT23 NPN SILICON PLANAR MEDIUM POWER TRANSISTORS ISSUE 4 – june 1996 PARTMARKING DETAILS BC817 – 6DZ BC817-16 – 6AZ BC817-25 – 6BZ BC817-40 – 6CZ ✪ BC818 – 6HZ BC818-16 – 6EZ BC818-25 – 6FZ BC818-40 – 6GZ

Contextual Info: BCW66HR Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)45 V(BR)CBO (V)75 I(C) Max. (A)800m Absolute Max. Power Diss. (W)225m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)20nx @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

BCW65 ec

Abstract: BCW66H BCW65AR
Contextual Info: Not Recommended for New Design Please Use BCW66H BCW65 BCW66 ELECTRICAL CHARACTERISTICS at Tamb = 25°C unless otherwise stated . PARAMETER Collector-Emitter Breakdown Voltage SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. BCW65 BCW66 V(BR)CEO 32 45 V ICEO=10mA ICEO=10mA

max7575

Abstract: BCW66F BCW66G BCW66H
Contextual Info: BCW66F, BCW66G BCW66H COIL GENERAL PURPOSE TRANSISTOR N -P -N transistor Marking BCW 66F = EF BCW 66G = EG BCW 66H = EH PA C K A G E O U TLIN E D ETA ILS A LL D IM EN SIO N S IN m m J3.0 2 .8 * 0.14 0.48 0.38 3 2.6 Pin configuration 2.4 1 = BASE 2 = EMITTER

ic 556

Abstract: transistor SMD bcw66h BCW66F BCW66G BCW66H for ic 556 marking cd 556 SMD TRANSISTOR MARKING bw
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BCW66F, BCW66G BCW66H GENERAL PURPOSE TRANSISTOR N–P–N transistor Marking BCW 66F = EF BCW 66G = EG BCW 66H = EH PACKAGE OUTLINE DETAILS

Contextual Info: PART OBSOLETE - USE BCW66H / BCX6825 SOT89 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR BC868 ISSUE 4 - OCTOBER 1995 ✪ FEATURES * SUITABLE FOR GENERAL AF APPLICATIONS AND CLASS B AUDIO OUTPUT STAGES UPTO 3W * HIGH hFE AND LOW SATURATION VOLTAGE COMPLEMENTARY TYPE -

BCW65CR

Abstract: bcw66
Contextual Info: PART OBSOLETE - USE BCW66H BCW65 BCW66 ELECTRICAL CHARACTERISTICS at Tamb = 25°C unless otherwise stated . PARAMETER Collector-Emitter Breakdown Voltage SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. BCW65 BCW66 V(BR)CEO 32 45 V ICEO=10mA ICEO=10mA BCW65 BCW66 V(BR)CES 60

Contextual Info: SOT23 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR ISSUE 4 - MARCH 2001 PARTMARKING DETAILS – BCW66F – EF BCW66G – EG BCW66H – EH BCW66FR – BCW66GR – BCW66HR – BCW66 7P 5T 7M E C B COMPLEMENTARY TYPE – BCW68 SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER

Contextual Info: 23333=14 000G7b5 Ô71 BCW66F, BCW66G BCW66H GENERAL PURPOSE TRANSISTOR N -P -N transistor Marking BCW 66F = EF BCW 66G = EG BCW 66H = EH PACKAG E O U TLIN E D ETA ILS A LL D IM EN SIO N S IN m m J3.0 2.8 0.14 0.09 0.48 0.38 3 L 0.70 0.50 § 2.6 Pin configuration

BCW66FR

Abstract: BCW66HR vce 1v BCW66 BCW66F BCW66G BCW66GR BCW66H BCW68
Contextual Info: SOT23 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR ISSUE 4 - MARCH 2001 PARTMARKING DETAILS – BCW66F – EF BCW66G – EG BCW66H – EH BCW66FR – BCW66GR – BCW66HR – BCW66 7P 5T 7M E C B COMPLEMENTARY TYPE – BCW68 SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER

Contextual Info: MCC
  omponents 21201 Itasca Street Chatsworth    !"# $ %    !"# BCW66H Features NPN Small l Ideally Suited for Automatic Insertion l 150oC Junction Temperature l Low Current, Low Voltage l Epitaxial Planar Die Construction

Contextual Info: L BCW66F, BCW66G BCW66H GENERAL PURPOSE TRANSISTOR N -P -N transistor M arking BCW 66F = EF BCW 66G = EG BCW 66H = EH PACKAGE OUTLIN E DETAILS A LL DIM ENSIONS IN m m _3.0 2 .8" 0.14 0.48 0.38 3 Pin configuration 2.6 2.4 1 = BASE 2 = EMITTER 3 • COLLECTOR

Contextual Info: MCC BCW66H
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components Features NPN Small Lead Free Finish/RoHS Compliant "P" Suffix designates RoHS Compliant. See ordering information

BCW66H

Abstract: BCW66F BCW66G
Contextual Info: 23033=14 0ÜQ0 7b5 Ô71 BCW66F, BCW66G BCW66H GENERAL PURPOSE TRANSISTOR N -P -N transistor Marking BCW 66F = EF BCW 66G = EG BCW 66H = EH PACKAG E O UTLIN E D ETA ILS ALL D IM EN SIO N S IN m m _3.0 2.8 0.14 0.09 0.48 0.38 Pin configuration _L § 3 0.70 0.50

BC818C

Contextual Info: Not Recommended for New Design Please Use BCW66H BC817 BC818 SOT23 NPN SILICON PLANAR MEDIUM POWER TRANSISTORS ISSUE 4 – june 1996 PARTMARKING DETAILS BC817 – 6DZ BC817-16 – 6AZ BC817-25 – 6BZ BC817-40 – 6CZ ✪ BC818 – 6HZ BC818-16 – 6EZ BC818-25 – 6FZ

Contextual Info: MCC BCW66H
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components Features NPN Small Lead Free Finish/RoHS Compliant "P" Suffix designates RoHS Compliant. See ordering information

Contextual Info: MCC BCW66H
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components Features NPN Small Lead Free Finish/RoHS Compliant "P" Suffix designates RoHS Compliant. See ordering information