BCW65 Search Results

Contextual Info: BCW65A, BCW65B BCW65C GENERAL PURPOSE TRANSISTOR N -P -N transistor Marking BCW65A = EA BCW65B = EB BCW65C = EC PACKAG E O U TLIN E DETAILS ALL D IM EN SIO N S IN m m _3.0 2 .8" 0.14 0.48 0.38 3 Pin configuration 2.6 2.4 1 = BASE 2 = EMITTER 3 = COLLECTOR

Contextual Info: Semiconductor BCW65C SOT-23 B Mark: ED NPN General Purpose Amplifier This device is designed for general purpose am plifier applications at collector currents to 500 mA. Sourced from Process 19. Absolute Maximum Rstinys T A = 2 5 ° C unless o th e rw ise noted

BCW65ALT1

Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon BCW65ALT1 3 COLLECTOR 1 BASE 3 2 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage V CEO 32 Vdc Collector–Base Voltage V CBO 60 Vdc Emitter–Base Voltage V EBO

Diodes Marking K6

Abstract: BCX17 Diodes Marking K7 MARKING U1 marking A06 MARKING C4 Marking H2 S4 2A S5 MARKING BCV72
Contextual Info: SOT-23 TRANSISTORS & DIODES PRODUCT LIST AND DEVICE IDENTIFICATION TRANSISTORS TRANSISTORS Standard marking Reverse Joggle marking BCV71 BCV72 K7 K8 K6 K9 BCW29 BCW30 BCW31 BCW32 BCW33 BCW60A BCW60B BCW60C BCW60D BCW61A BCW61B BCW61C BCW61D BCW65A BCW65B BCW65C

transistors BC 23

Abstract: 14 SOT-23 sot-23 ce 110 sot 23 SOT-23 BSS sot-23 npn BCW60 BCW65 BCX41 BCX55
Contextual Info: AF transistors M axim um ratings PNP = P NPN = N V Kdeo BC 817 BC 818 BC 846 BC 847 BC 848 BC 849 BC 850 N N N N N N N BC 807 BC 808 BC 856 BC 857 BC 858 BC 859 BC 860 P P P P P P P BCW60 BCW65 BCW 66 BCX41 BCX 54 BCX55 BCX 56 BCX 68 BCX 70 N N N N N N N N

BCW65A

Abstract: BCW65B BCW65BR BCW66H BCW65 BCW65C BCW65CR BCW66F BCW66FR BCW66G
Contextual Info: BCW65 BCW66 SOT23 NPN SILICON PLANAR MEDIUM POWER TRANSISTORS ISSUE 3- AUGUST PARTMARKING 1995 DETAILS EA BCW65A13 - BCW65B - EB BCW65BR - 5V BCW65C - EC BCW65CR - 6V 7P BCW65A - EF BCW66FR - BCW66G - EG BCW66GF - 5T BCW66H - EH BCW66HF - 7M TYPES BCW65 -

BCW65C

Contextual Info: BCW65C C E SOT-23 B Mark: ED NPN General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 500 mA. Sourced from Process 19. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter

BCW66

Abstract: EFs SOT-23 BCW65 egs SOT23
Contextual Info: Transistors IC SMD Type NPN General Purpose Transistors BCW65,BCW66 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 1 0.55 Low collector-emitter saturation voltage. +0.1 1.3-0.1 +0.1 2.4-0.1 High current gain. 0.4 3 For general AF applications. 2 +0.1 0.95-0.1

BCW65ALT1

Contextual Info: ON Semiconductort BCW65ALT1 General Purpose Transistor NPN Silicon MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO 32 Vdc Collector–Base Voltage VCBO 60 Vdc Emitter–Base Voltage VEBO 5.0 Vdc IC 800 mAdc Symbol Max Unit PD 225

BCW65

Abstract: BCW66 BCW67 BCW67A BCW67B BCW67C BCW68 BCW68F BCW68G BCW68H
Contextual Info: BCW67, BCW68 PNP Silicon AF Transistors 3
For general AF applications
High current gain
Low collector-emitter saturation voltage
Complementary types: BCW65, BCW66 NPN 2 1 Type Marking Pin Configuration BCW67A DAs 1=B 2=E 3=C SOT23 BCW67B DBs 1=B

BCW66

Abstract: BCW65 BCW65A BCW67 BCW68 bcw66fr
Contextual Info: BCW65 BCW66 SOT23 NPN SILICON PLANAR M EDIUM POWER TRANSISTORS IS S U E 3 - A U G U S T 1995 P A R T M A R K IN G D E T A IL S B C W 6 5 A - EA _ B C W 6 5 A R - 4V B C W 65BR - 5V B C W 6 5 B - EB B C W 6 5 C - EC B C W 6 6 F - EF BC W 65CR - 6V B C W 6 6 G - EG

Contextual Info: BCW67, BCW68 PNP Silicon AF Transistors 3
For general AF applications
High current gain
Low collector-emitter saturation voltage
Complementary types: BCW65, BCW66 NPN 2 1 Type Marking Pin Configuration BCW67A DAs 1=B 2=E 3=C SOT23 BCW67B DBs 1=B

BCW65AR

Abstract: BCW65BR BCW66HR BCW66GR BCW65CR BCW65 BCW65A BCW65B BCW65C BCW66F
Contextual Info: BCW65 BCW66 ELECTRICAL CHARACTERISTICS at Tamb = 25°C unless otherwise stated . PARAMETER Collector-Emitter Breakdown Voltage SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. BCW65 BCW66 V(BR)CEO 32 45 V ICEO=10mA ICEO=10mA BCW65 BCW66 V(BR)CES 60 75 V IC=10µA IC=10µA

BSS79C

Abstract: BCW65C
Contextual Info: BSS79C BSS79C NPN General Purpose Amplifier • This device is for use as a medium power amplifier and swith requiring collector currents up to 500mA. • Sourced from process 19. • See BCW65C for characteristics. C E B SOT-23 Mark: CF Absolute Maximum Ratings * Ta=25°C unless otherwise noted

BCW65A

Contextual Info: Central BCW65 SERIES BCW66 SERIES Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR BCW65 and BCW66 Series types are NPN Silicon Transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for general purpose switching and

BCW65 ec

Abstract: BCW66H BCW65AR
Contextual Info: Not Recommended for New Design Please Use BCW66H BCW65 BCW66 ELECTRICAL CHARACTERISTICS at Tamb = 25°C unless otherwise stated . PARAMETER Collector-Emitter Breakdown Voltage SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. BCW65 BCW66 V(BR)CEO 32 45 V ICEO=10mA ICEO=10mA

Contextual Info: Transistors IC SMD Type Product specification BCW65,BCW66 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 1 0.55 Low collector-emitter saturation voltage. +0.1 1.3-0.1 +0.1 2.4-0.1 High current gain. 0.4 3 For general AF applications. 2 +0.1 0.95-0.1 +0.1

L50Q

Abstract: BCW65C
Contextual Info: S e m i c o n d u c t o r “ BCW65C D iscrete P O W ER & S ig n a l Technologies National BCW65C M a rk : E D NPN General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 500 mA. Sourced from Process 19.

Contextual Info: BCW65A, BCW65B BCW65C GENERAL PURPOSE TRANSISTOR N -P-N transistor Marking BCW65A = EA BCW65B = EB BCW65C = EC PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm _3.0_ 2.8 0.14 0.48 038 0.70 0.50 3 2.6 Pin configuration 1.4 1.2 2.4 R0.1 ÔômT 1 = BASE 2 = EMITTER

Contextual Info: BCW65ALT1 General Purpose Transistor NPN Silicon Features • Pb−Free Package is Available http://onsemi.com COLLECTOR 3 1 BASE MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO 32 Vdc Collector −Base Voltage VCBO 60 Vdc Emitter −Base Voltage

Motorola 417

Abstract: BCW65ALT1
Contextual Info: MOTOROLA Order this document by BCW65ALT1/D SEMICONDUCTOR TECHNICAL DATA General Purpose Transistor NPN Silicon BCW65ALT1 COLLECTOR 3 1 BASE 3 1 2 EMITTER 2 MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage VCEO 32 Vdc Collector – Base Voltage

BCW65C

Abstract: BSR14 SOT23 NE
Contextual Info: BSR14 BSR14 C E SOT-23 B Mark: U8 NPN General Purpose Amplifier This device is for use as a medium power amplifier and switch requiring collector currents up to 500 mA. Sourced from Process 19. See BCW65C for characteristics. Absolute Maximum Ratings* Symbol

BCW67

Abstract: BCW65 BCW66 BCW67A BCW68 ferranti
Contextual Info: 4 FER R AN TI ¥ semiconductors BCW67 BCW68 PNP Sil icon Planar M e d i u m P o w e r Transistors DESCRIPTION These devices are intended for use in medium power general purpose, switching and low noise applications. Complementary to the BCW65 and BCW66.

Diodes Marking K7

Abstract: Diodes Marking K6 sot23 marking m8 transistors marking 1p BSS69 marking 1p sot23 Marking b4 SOT23 MARKING l7 MARKING K4 marking H6 sot 23
Contextual Info: SOT-23 TRANSISTORS & DIODES PRODUCT LISTA N O DEVICE IDENTIFICATION TRANSISTORS TRANSISTORS Standard marking Reverse Joggle marking BCV71 BCV72 K7 K8 K6 K9 BCW29 BCW30 BCW31 BCW32 BCW33 BCW60A BCW60B BCW60C BCW60D BCW61A BCW61B BCW61C BCW61D BCW65A BCW65B